Manufacturer Part Number
PBSS8110T,215
Manufacturer
Nexperia
Introduction
High-performance NPN bipolar transistor in a small surface-mount package
Product Features and Performance
Low collector-emitter saturation voltage
High current handling capability up to 1 A
High DC current gain of 150 minimum at 250 mA, 10 V
Transition frequency of 100 MHz
480 mW maximum power dissipation
Product Advantages
Compact surface-mount package
Optimized for high-frequency, high-power applications
Robust and reliable performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 100 V
Collector Current (IC): 1 A
Collector Cutoff Current (ICBO): 100 nA
Collector-Emitter Saturation Voltage (VCE(sat)): 200 mV @ 100 mA, 1 A
DC Current Gain (hFE): 150 minimum @ 250 mA, 10 V
Transition Frequency (fT): 100 MHz
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
TO-236-3, SC-59, SOT-23-3 package
Application Areas
High-frequency, high-power amplifiers
Switching circuits
Driver circuits
Power supplies
Product Lifecycle
Active product
No known discontinuation or replacement plans
Key Reasons to Choose This Product
High current handling capability
Excellent high-frequency performance
Low collector-emitter saturation voltage for efficient operation
Robust and reliable in a compact surface-mount package
RoHS3 compliance for environmental responsibility
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