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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Single, Pre-BiasedPDTA123TMB,315
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PDTA123TMB,315 - Nexperia USA Inc.

Manufacturer Part Number
PDTA123TMB,315
Manufacturer
Nexperia
Allelco Part Number
98D-PDTA123TMB,315
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
37,520 pcs available, New & Original
Parts Description
TRANS PREBIAS PNP 50V DFN1006B-3
Package
DFN1006B-3
Data sheet
PDTA123TMB,315.pdf

Datasheets

PDTA123TMB.pdf

PCN Design/Specification

Mult Dev 02/Jan/2023.pdf
RoHs Status
ROHS3 Compliant
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Our certification
In stock: 37520
  • Unit Price: $0.028
  • Subtotal: $0.00

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1+ $0.028 $0.03
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

PDTA123TMB,315 Tech Specifications
Nexperia USA Inc. - PDTA123TMB,315 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. - PDTA123TMB,315

Product Attribute Attribute Value
Manufacturer Nexperia
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Transistor Type PNP - Pre-Biased
Supplier Device Package DFN1006B-3
Series Automotive, AEC-Q100
Resistor - Base (R1) 2.2 kOhms
Power - Max 250 mW
Product Attribute Attribute Value
Package / Case 3-XFDFN
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 180 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 5V
Current - Collector Cutoff (Max) 1µA
Current - Collector (Ic) (Max) 100 mA
Base Product Number PDTA123

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

What is the maximum collector current and voltage rating for the PDTA123TMB,315 prebiased PNP transistor, and how do these parameters influence its use in low-power signal switching applications?
The PDTA123TMB,315 supports a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. These ratings make it suitable for low-voltage, low-current switching tasks such as driving small loads, level shifting, or controlling logic signals in compact embedded systems. Its 50 V capability allows safe operation in 3.3V or 5V logic environments without risk of avalanche breakdown, while the 100 mA limit ensures reliable performance in applications like LED driving or sensor interfacing where power dissipation remains minimal.
How does the internal base resistor value of 2.2 kΩ in the PDTA123TMB,315 affect input impedance matching when used with microcontroller GPIO pins, and what are the implications for high-speed digital control?
The integrated 2.2 kΩ base resistor reduces the need for external biasing components, simplifying PCB layout and improving reliability. When connected to a 3.3V or 5V GPIO pin, this resistor limits base current appropriately, preventing overstimulation of the transistor. However, at 2.2 kΩ, the input impedance is relatively low, which may cause loading on high-impedance sources or reduce noise margin in high-frequency switching scenarios. For applications requiring faster rise times or lower propagation delay, this fixed resistance may slightly limit bandwidth due to RC time constants, though the device’s 180 MHz transition frequency still supports most digital control tasks up to several tens of megahertz.
Can the PDTA123TMB,315 be used interchangeably with discrete PNP transistors in prebiased configurations, and under what conditions would a replacement introduce significant design changes?
While functionally similar to discrete prebiased PNP pairs, the PDTA123TMB,315 integrates matched resistors and transistor characteristics optimized for space-constrained designs. Replacing it with discrete components would require additional resistors and possibly different package footprints, increasing board area and assembly cost. Conversely, substituting another prebiased BJT like the NXP PDTA144TU may not be drop-in compatible due to differences in R1 values, hFE ranges, or package dimensions—such as DFN vs. SOT-323. Therefore, cross-replacement is only advisable if all electrical and mechanical specifications align precisely, including thermal performance and soldering profiles.
What is the typical hFE range of the PDTA123TMB,315, and how might variations in gain affect current amplification accuracy in precision analog conditioning circuits?
The minimum guaranteed DC current gain (hFE) is 30 at 20 mA collector current and 5 V Vce. In practice, actual gain can vary significantly between production units due to manufacturing tolerances. This variability introduces uncertainty in current mirror accuracy or feedback loop stability when used in linear regulation or sensor signal conditioning. Designers should assume worst-case hFE = 30 and derate expected output currents accordingly—for instance, limiting Ic to ensure Ib remains sufficient even at low gains. Compensation networks or feedback resistors may be needed to stabilize behavior across temperature and batch variations.
Given its 180 MHz transition frequency, what types of RF or high-speed digital applications can the PDTA123TMB,315 support, and what practical limitations arise from its small-signal characteristics?
The 180 MHz fT enables use in high-speed switching applications such as USB data line buffering, clock signal routing, or low-level RF detection circuits. However, this metric applies to small-signal conditions; large-signal switching will exhibit higher effective delays due to charge storage effects. In real-world digital paths, the turn-on/turn-off delay typically exceeds 1–2 ns, making it marginal for sub-nanosecond timing-critical interfaces like DDR memory control. Additionally, its 250 mW power rating constrains continuous operation near full load, necessitating thermal management in dense layouts.
How does the surface-mount package (DFN1006B-3) of the PDTA123TMB,315 impact thermal performance and soldering requirements compared to larger SOT packages?
The DFN1006B-3 package offers excellent thermal conductivity due to exposed pads, enhancing heat dissipation despite its tiny footprint (~1 mm²). This makes it ideal for space-limited designs where junction temperatures must stay below 150°C. However, its low thermal mass means rapid heating during reflow soldering requires precise temperature profiling to avoid damage. Compared to SOT-23 variants, it provides superior thermal coupling to PCBs but demands careful stencil design and solder paste application to ensure reliable wetting of all leads and pad connections.
Is the PDTA123TMB,315 suitable for battery-powered devices, and what considerations apply regarding quiescent power consumption and leakage current?
Yes, the device is well-suited for battery-operated systems thanks to its low collector cutoff current (max 1 µA) and minimal static power draw when off. With only 1 µA leakage, it contributes negligibly to standby drain in portable electronics. The integrated base resistor also eliminates pull-up/down current when the base is left floating, aiding energy efficiency. However, designers must still verify total system quiescent current under all states, especially if multiple such devices are paralleled or used in sleep-mode control loops.
How do the saturation voltage and required base drive compare between the PDTA123TMB,315 and alternative prebiased PNP transistors like the PDTA144TU in motor driver circuits?
At 10 mA collector current, the PDTA123TMB,315 exhibits a saturation voltage of 150 mV with 500 µA base current—lower than many alternatives, improving efficiency. The PDTA144TU, by contrast, often features lower R1 values (e.g., 4.7 kΩ) and slightly higher hFE, yielding better switching speed but potentially higher base drive requirements. In low-inductance loads like small DC motors, both perform adequately, but the PDTA123’s higher R1 demands less aggressive base drive from microcontrollers. Trade-offs include response time versus control complexity: faster switching favors lower R1, while simplicity favors higher R1 with moderate speed.
What precautions should be taken when using the PDTA123TMB,315 in environments with high electromagnetic interference, and how does its packaging influence susceptibility?
Due to its small size and lack of shielding, the DFN1006B-3 package offers limited protection against conducted EMI. Placement away from noisy traces and inclusion of bypass capacitors near supply rails help mitigate coupling. Additionally, series base termination (if allowed by design) can suppress ringing. The device itself has no intrinsic RF immunity enhancement, so sensitive analog front ends using this transistor should employ layout techniques like ground planes, guard rings, and minimized lead lengths to maintain signal integrity.
Can the PDTA123TMB,315 operate reliably in automotive-grade temperature ranges, and what documentation verifies compliance?
Standard datasheet specifications apply to commercial temperature ranges (typically 0°C to +70°C or -40°C to +85°C depending on grade). The PDTA123TMB,315 does not carry AEC-Q101 qualification unless specified in part-specific documentation—most consumer-grade NXP BJTs do not. For automotive use, engineers should select explicitly Q101-qualified variants (e.g., with “AQ” suffix) or validate reliability through accelerated life testing. Operating beyond rated conditions risks premature failure due to bond wire degradation or epitaxial layer stress.
How does the 250 mW power dissipation limit constrain continuous operation of the PDTA123TMB,315, and what happens if exceeded in confined spaces?
Exceeding 250 mW causes junction temperature to rise above safe levels, potentially leading to thermal runaway or permanent damage. In tightly packed PCBs with poor airflow, even moderate Ic × Vce(sat) products (e.g., 10 mA × 15 V = 150 mW) accumulate heat quickly. Without heatsinking, ambient temperatures above 50°C can push total losses into hazardous territory. Designers must derate power by 20–30% in high-temperature environments or use spreader layers and thermal vias to distribute heat effectively.
What role does the base resistor play in protecting the PDTA123TMB,315 from ESD events when handling bare boards or hot-swapping peripherals?
The 2.2 kΩ resistor provides modest protection by limiting surge current into the base-emitter junction during transient events. However, it alone cannot handle full HBM (Human Body Model) ESD levels (typically >2 kV). Additional measures—such as TVS diodes at inputs, series resistors greater than 10 kΩ, or proper grounding practices—are essential. The internal resistor helps prevent latchup but does not replace robust ESD protection circuitry required in industrial or mobile applications.
How does the PDTA123TMB,315 compare to NPN counterparts like the PDTA114Y in complementary switch configurations, particularly regarding logic compatibility and noise margins?
In complementary pairings (e.g., PNP for pull-up, NPN for pull-down), the PDTA123TMB,315 works alongside NPN devices like the PDTA114Y to form efficient level translators or totem-pole outputs. The PNP’s higher input impedance and negative-going activation simplify interface with open-collector sensors, whereas NPN stages excel at sourcing current. Noise margins depend more on supply stability than transistor type, but the PDTA123’s moderate hFE and stable Vce(sat) support consistent threshold behavior across batches, aiding predictable logic transitions.
Are there any known layout parasitics associated with the SC-101/SOT-883 package that could degrade performance in GHz-range probing or test fixtures?
Yes, the miniature SC-101 package exhibits parasitic inductance and capacitance due to short lead lengths, which actually benefit high-frequency performance by minimizing stray reactance. However, during automated test or probing, improper contact geometry can introduce additional inductance, distorting measurements above 100 MHz. Accurate characterization requires calibrated setups with spring-loaded probes and ground reference planes close to the device. For routine circuit use, parasitics are negligible below 500 MHz but should be considered in custom RF test jigs.
What is the significance of the ECCN code EAR99 for the PDTA123TMB,315, and how might it affect global sourcing or export restrictions?
ECCN EAR99 indicates the component is not subject to specific U.S. export controls under the Export Administration Regulations, meaning it generally complies with standard trade rules. This simplifies procurement from international distributors and reduces licensing overhead for commercial electronics. However, end-use restrictions still apply—for example, military or space applications may require additional compliance checks regardless of component classification. Engineers sourcing globally should verify local regulations beyond U.S. classifications.
How does the absence of a defined series designation impact traceability and substitution decisions involving the PDTA123TMB,315?
Without a formal series label, differentiation between product generations or quality grades relies solely on part number suffixes and datasheet revisions. This complicates legacy replacements where subtle improvements (e.g., enhanced hFE linearity or reduced leakage) exist between revisions. Designers must consult latest NXP documentation to confirm compatibility, avoiding assumptions based solely on model numbers. Maintaining version-controlled BOMs with revision dates and checksums mitigates substitution risks during long-term production runs.
What design considerations arise when cascading multiple PDTA123TMB,315 stages for signal amplification, and how does gain stacking affect bandwidth?
Cascading increases overall gain but introduces cumulative phase lag due to each stage’s finite bandwidth. With fT = 180 MHz, single-stage performance is acceptable up to ~30 MHz, but two stages reduce usable bandwidth to ~15 MHz. Additionally, interstage loading from input capacitance (~5 pF typical) further attenuates high frequencies. To maintain stability, feedback networks or emitter degeneration may be necessary, trading gain for linearity and bandwidth—critical in audio or precision measurement paths.
Why might a designer choose the bulk packaging format for the PDTA123TMB,315 over tape-and-reel, and what are the logistical implications for prototyping versus volume production?
Bulk packaging suits low-volume prototyping where frequent hand-soldering or manual inspection is common, offering cost savings and easier access for debugging. It avoids the expense of reel handling and vacuum-sealed storage required for automated pick-and-place. However, for high-volume manufacturing, tape-and-reel improves feeder compatibility and reduces placement errors. Logistics-wise, bulk parts demand careful inventory control to prevent oxidation or contamination, especially given the device’s sensitivity to moisture (though not rated Moisture Sensitivity Level 1).

Parts with Similar Specifications

The three parts on the right have similar specifications to Nexperia USA Inc. PDTA123TMB,315

Product Attribute PDTA123TMB,315 PDTA123TM,315 PDTA123TM315 PDTA123TT,235
Part Number PDTA123TMB,315 PDTA123TM,315 PDTA123TM315 PDTA123TT,235
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Base Product Number - DAC34H84 MAX500 ADS62P42
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce - - - -
Resistor - Base (R1) - - - -
Power - Max - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Transistor Type - - - -
Series - - - -
Vce Saturation (Max) @ Ib, Ic - - - -
Current - Collector Cutoff (Max) - - - -
Frequency - Transition - - - -
Voltage - Collector Emitter Breakdown (Max) - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Current - Collector (Ic) (Max) - - - -

PDTA123TMB,315 Datasheet PDF

Download PDTA123TMB,315 pdf datasheets and Nexperia USA Inc. documentation for PDTA123TMB,315 - Nexperia USA Inc..

Datasheets
PDTA123TMB.pdf
PCN Packaging
Label Chg 12/Mar/2017.pdf All Dev Label Chgs 2/Aug/2020.pdf
PCN Design/Specification
Mult Dev 02/Jan/2023.pdf

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    Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.

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PDTA123TMB,315 Image

PDTA123TMB,315

Nexperia USA Inc.
98D-PDTA123TMB,315

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