Manufacturer Part Number
RJK03C0DPA-00#J53
Manufacturer
Renesas Electronics Corporation
Introduction
This product is a discrete semiconductor device, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
30V Drain-to-Source Voltage (Vdss)
2mOhm maximum On-Resistance (Rds(on)) at 35A, 10V
70A continuous Drain Current (Id) at 25°C
11000pF maximum Input Capacitance (Ciss) at 10V
65W maximum Power Dissipation at Tc
5V maximum Gate Threshold Voltage (Vgs(th)) at 1mA
66nC maximum Gate Charge (Qg) at 4.5V
Product Advantages
Low On-Resistance for high efficiency
High current handling capability
Surface mount package for compact designs
Key Technical Parameters
MOSFET technology
N-Channel FET type
30V Drain-to-Source Voltage
2mOhm maximum On-Resistance
70A continuous Drain Current
Quality and Safety Features
RoHS compliance status not applicable
Compatibility
Compatible with various surface mount applications
Application Areas
Suitable for use in power supply, motor control, and other high-power switching applications
Product Lifecycle
Current production status, no information on discontinuation or replacements
Key Reasons to Choose This Product
High current handling capability
Low on-resistance for improved efficiency
Compact surface mount package
Suitable for a variety of power electronics applications
RJK03B9DPA-00-J5AAMI Semiconductor/onsemi