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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleSTF11N50M2
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STF11N50M2 - STMicroelectronics

Manufacturer Part Number
STF11N50M2
Manufacturer
STMicroelectronics
Allelco Part Number
32D-STF11N50M2
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
48,770 pcs available, New & Original
Parts Description
MOSFET N-CH 500V 8A TO220FP
Package
TO-220FP
Data sheet
STF11N50M2.pdf

Datasheets

STx11N50M2.pdf

PCN Obsolescence/ EOL

Mult Dev OBS 3/Jul/2020.pdf
RoHs Status
ROHS3 Compliant
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Our certification
In stock: 48770
  • Unit Price: $0.336
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
1+ $0.336 $0.34
10+ $0.329 $3.29
30+ $0.325 $9.75
100+ $0.32 $32.00
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

STF11N50M2 Tech Specifications
STMicroelectronics - STF11N50M2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics - STF11N50M2

Product Attribute Attribute Value
Manufacturer STMicroelectronics
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220FP
Series MDmesh™ II Plus
Rds On (Max) @ Id, Vgs 530mOhm @ 4A, 10V
Power Dissipation (Max) 25W (Tc)
Package / Case TO-220-3 Full Pack
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 395 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Base Product Number STF11

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Parts Introduction

STF11N50M2 Image
STF11N50M2 (1)

Manufacturer Part Number

STF11N50M2

Manufacturer

STMicroelectronics

Introduction

N-Channel MOSFET Transistor

Product Features and Performance

Drain to Source Voltage (Vdss) of 500 V

Vgs (Max) of ±25 V

Rds On (Max) of 530 mOhm @ 4 A, 10 V

Continuous Drain Current (Id) of 8 A at 25°C

Input Capacitance (Ciss) of 395 pF @ 100 V

Power Dissipation (Max) of 25 W at Tc

Gate Charge (Qg) of 12 nC @ 10 V

Product Advantages

High voltage handling capability

Low on-resistance

High continuous drain current

Suitable for high-power applications

STF11N50M2 Image
STF11N50M2 (2)

Key Technical Parameters

MOSFET Technology

N-Channel FET Type

Vgs(th) (Max) of 4 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On) of 10 V

Operating Temperature range of -55°C to 150°C

Quality and Safety Features

RoHS3 Compliant

TO-220-3 Full Pack package

Compatibility

Compatible with a variety of high-power electronic circuits and systems

Application Areas

Switching power supplies

Motor drives

Inverters

Industrial controls

Automotive electronics

Product Lifecycle

Current product offering

Replacement options may be available in the future

Key Reasons to Choose This Product

Excellent high-voltage handling capability

Low on-resistance for efficient power conversion

High continuous drain current for high-power applications

Wide operating temperature range for versatile use

RoHS compliance for environmental responsibility

Reliable TO-220 package for robust performance

Frequently Asked Questions(FAQ)

What are the key thermal and electrical limitations of the STF11N50M2 when used in a 48V industrial motor drive application with continuous load currents near its rated maximum?
The STF11N50M2 has a continuous drain current rating of 8A at 25°C (Tc), which implies this is measured under fully heatsinked conditions. In a real-world 48V motor drive, if the MOSFET conducts 7–8A continuously, the junction temperature must be carefully managed. With a maximum power dissipation of 25W (Tc) and an Rds(on) of 530mΩ at 4A and Vgs=10V, conduction losses scale quadratically with current. For example, at 8A, estimated conduction loss would be approximately (8² × 0.53) = 33.9W, but since this exceeds the 25W Tc rating, thermal derating applies. This suggests that either the case temperature must be kept below ~70°C or a lower operating current must be maintained to avoid thermal runaway. Gate drive voltage should remain at 10V to ensure minimal Rds(on), as reducing Vgs increases resistance and power loss.
How does the gate charge (Qg) of the STF11N50M2 influence switching performance in high-frequency PWM applications, and what driver requirements arise from its 12 nC value at 10V?
The gate charge of 12 nC at Vgs=10V indicates moderate switching speed for a 500V N-channel MOSFET. In PWM frequencies above 20–30 kHz, this Qg value results in significant gate drive losses, especially if driven by a low-impedance source. To minimize switching time and reduce turn-on/turn-off delay, a gate driver capable of sourcing at least 200–400 mA peak current is recommended. Without sufficient drive strength, the effective Vgs may not reach 10V during transitions, increasing Rds(on) and raising conduction losses. Additionally, the input capacitance (Ciss = 395 pF @ 100V) combined with Qg implies a bandwidth-limited switching edge, which can contribute to EMI in high-speed applications.
When comparing the STF11N50M2 to alternative devices like IXTP15N50L2 or TK12A45D(STA4,Q,M), what critical trade-offs exist in terms of Rds(on), package compatibility, and reliability?
While the STF11N50M2 offers an Rds(on) of 530mΩ at 4A and 10V, the IXTP15N50L2 provides a lower Rds(on) (~250mΩ typical) due to advanced trench technology, resulting in better efficiency. However, the STF11N50M2 uses the TO-220FP package, which features enhanced thermal performance with a built-in heat slug, whereas some alternatives may use standard TO-220 or surface-mount packages requiring careful PCB layout. The TK12A45D variant may support higher gate charge handling or improved avalanche ruggedness, but lacks direct mechanical compatibility with TO-220FP sockets. Selection depends on system-level thermal design, footprint constraints, and whether the application benefits more from conduction loss reduction or ease of assembly.
Why might a designer choose the STF11N50M2 over a logic-level MOSFET despite its threshold voltage of 4V being relatively high?
Although the STF11N50M2 has a Vgs(th) max of 4V, which exceeds the 2–4V range typical of logic-level FETs, it is optimized for robust operation in industrial environments where noise immunity and stable on-resistance are prioritized. At Vgs=10V, Rds(on) remains low at 530mΩ, ensuring efficient conduction. Logic-level MOSFETs often sacrifice breakdown voltage or ruggedness for easier gate drive, making them less suitable for 500V applications. The STF11N50M2’s design ensures reliable switching even with non-optimal gate voltages, provided they exceed 10V for full enhancement. Thus, for 500V systems, robustness and voltage capability outweigh the convenience of lower gate drive requirements.
What precautions should be taken regarding electrostatic discharge (ESD) and handling when integrating the STF11N50M2 into a production line with automated pick-and-place equipment?
Despite the MSL rating of 1 indicating unlimited shelf life, the STF11N50M2 contains sensitive gate oxide layers vulnerable to ESD damage. During automated assembly, grounding straps, ESD-safe trays, and ionized airflow should be used. The TO-220FP package includes a metal tab that must be properly bonded to a heatsink; improper handling could introduce mechanical stress or create unintended conductive paths. Additionally, although the device is RoHS3 compliant and REACH unaffected, environmental controls should still prevent contamination during soldering. Proper ESD protocols reduce the risk of latent failures in high-reliability applications such as power supplies or motor controllers.
Can the STF11N50M2 safely handle brief overload conditions or transients beyond its 8A continuous rating, such as inrush currents during capacitor charging?
The STF11N50M2 is designed with ruggedness for industrial use, but its safe operating area (SOA) must be evaluated for transient events. While the device may tolerate short-duration overloads—such as 10–12A pulses under clamped inductive conditions—the lack of explicit pulse current ratings in the datasheet implies conservative assumptions. In capacitor-charging circuits, energy is proportional to I²t, so brief surges must be analyzed using thermal impedance curves. If the total energy per cycle stays within limits and junction temperature remains below 150°C, operation may be acceptable. However, without detailed SOA data or manufacturer-specific transient analysis, relying solely on continuous ratings for overload protection introduces risk.
How does the input capacitance (Ciss) of 395 pF at 100V affect high-side switching configurations using the STF11N50M2?
In high-side switching, the gate-source capacitance (Crss and Ciss) interacts with the bootstrap circuit’s impedance, affecting turn-on speed and stability. The Ciss of 395 pF means that driving the gate requires charging this capacitance through a bootstrap diode and capacitor. A slow drive or insufficient bootstrap current can result in incomplete turn-on, increasing Rds(on) and causing localized heating. This is particularly relevant in half-bridge topologies where dead time control is critical. To maintain fast switching and minimize cross-conduction, a bootstrap capacitor with low ESR and adequate current delivery is essential, especially at higher PWM frequencies.
What role does the MDmesh™ II Plus series architecture play in the performance characteristics of the STF11N50M2, and how does it compare to earlier generation MOSFETs?
The MDmesh™ II Plus process improves upon previous generations by optimizing cell density and drift region doping, enabling lower Rds(on) per unit area at 500V. This results in higher current handling and better thermal performance in the same TO-220FP package. Compared to older STF11 variants, this iteration reduces conduction losses by up to 30% under similar conditions. The enhanced vertical structure also contributes to reduced gate charge and lower output capacitance (Coss), improving switching efficiency. These improvements make the STF11N50M2 suitable for energy-efficient designs where both conduction and switching losses matter.
Is the STF11N50M2 suitable for synchronous rectification in a 48V DC-DC converter, and what considerations apply to its body diode performance?
Yes, the STF11N50M2 can function as a synchronous rectifier in a 48V converter, but attention must be paid to its intrinsic body diode reverse recovery characteristics. Since it is an N-channel device, synchronous rectification typically requires a low-side configuration. The body diode has limited reverse recovery energy (Qrr), but this parameter isn’t specified in the summary data, so empirical testing or full datasheet review is advised. If reverse recovery spikes cause voltage ringing or EMI, snubber networks or active gate control during turn-off may be needed. Also, ensure that the diode conducts efficiently during dead times without excessive forward drop.
How does the operating temperature range (-55°C to 150°C) of the STF11N50M2 impact long-term reliability in automotive or aerospace environments?
The wide junction temperature range supports harsh environment operation, including automotive and aerospace systems. However, maximum junction temperature (Tj = 150°C) sets a hard limit for thermal management. In high ambient temperatures or dense layouts, derating is necessary to prevent accelerated aging or failure. The positive temperature coefficient of Rds(on) helps with parallel operation by naturally balancing current sharing. Still, long-term reliability depends on avoiding thermal cycling fatigue and ensuring solder joint integrity across the full range. For mission-critical systems, additional margin (e.g., limiting Tj to <125°C) is prudent.
What are the implications of using the STF11N50M2 in a parallel configuration for increased current capacity?
Parallel operation of the STF11N50M2 requires careful matching of Rds(on) and gate drive symmetry due to the positive temperature coefficient of Rds(on). Mismatched devices will experience uneven current distribution, potentially leading to thermal runaway. A small resistor in series with each gate can improve stability, though it increases cost and complexity. Additionally, parasitic inductance in interconnects can cause current imbalance during fast transients. Therefore, while possible, paralleling demands precise layout, thermal coupling, and possibly active current-sharing circuits unless the application allows inherent balance through design symmetry.
How does the TO-220FP package enhance thermal performance compared to standard TO-220 in the context of the STF11N50M2?
The TO-220FP package features a larger exposed metal tab (full pack) that acts as an integrated heat spreader, providing lower thermal resistance between the die and heatsink. For the STF11N50M2, this enables the stated 25W power dissipation at case temperature, assuming proper mounting. Compared to standard TO-220, the FP version reduces θJC by approximately 30–40%, significantly improving heat transfer. This makes it ideal for compact designs where airflow is limited and consistent cooling is required. However, it also requires compatible socket or heatsink with flat contact surface to fully exploit its thermal advantages.
What gate drive voltage is optimal for minimizing total losses in the STF11N50M2, and why?
The optimal gate drive voltage for the STF11N50M2 is 10V, as this minimizes Rds(on) at 530mΩ for a 4A test condition. Higher Vgs (within ±25V limit) slightly reduces Rds(on), but the improvement diminishes beyond 10V. Driving at 10V balances switching speed, gate drive effort, and efficiency. Lower Vgs increases conduction losses quadratically, while excessive Vgs risks exceeding voltage limits or increasing switching losses due to prolonged Miller plateau duration. Thus, 10V provides a practical compromise for most industrial PWM applications.
Are there any known substitutes for the STF11N50M2 that offer better performance or compatibility, and how should they be evaluated?
Substitutes like IXTP15N50L2 or IXTP12N50P offer lower Rds(on) or different package forms, but evaluation requires cross-checking key parameters: voltage rating, current capability, gate charge, and footprint. For instance, IXTP15N50L2 has superior Rds(on) but may require surface mount assembly, incompatible with existing TO-220FP sockets. Similarly, IXTP6N50D2 offers higher current but different pinout. Any substitution must consider thermal interface materials, creepage distances, and PCB real estate. Always verify dynamic behavior (switching waveforms, SOA) under actual load conditions before finalizing replacement.
How does the absence of explicit avalanche energy ratings for the STF11N50M2 affect its suitability in inductive load switching scenarios?
While the STF11N50M2 is built for robustness, the lack of published single-pulse or repetitive avalanche energy specifications means designers cannot assume it handles inductive flyback safely without validation. In motor drives or transformer circuits, energy absorbed during turn-off must be dissipated via clamping or snubbing. Without knowing EAS or EAR ratings, worst-case energy levels should be calculated and compared against safe operating margins. In such cases, external protection (e.g., TVS diodes) or soft-switching techniques are advisable to prevent failure.
What impact does moisture sensitivity level (MSL) 1 have on storage and handling of the STF11N50M2 in bulk packaging?
MSL 1 indicates that the STF11N50M2 is not susceptible to moisture-induced damage under normal storage conditions, allowing unlimited floor life without baking. It can be stored at ambient humidity (≤85% RH) and temperature (<30°C) for extended periods. This simplifies logistics for manufacturers who receive components in tubes or reels and assemble them weeks later. However, ESD precautions remain mandatory regardless of MSL rating due to internal semiconductor sensitivity.
In what ways does the base product number STF11 inform derivative part selection, and are other STF11 variants interchangeable?
The STF11 base indicates a family of 500V N-channel MOSFETs from STMicroelectronics with shared core architecture. Variants differ mainly in package type, thermal ratings, or minor parameter tweaks. For example, STF11N50M2 is TO-220FP, while others might be in D²PAK or SMD formats. Interchangeability depends on mechanical fit, thermal performance, and electrical thresholds. Direct swapping without verification can lead to poor thermal management or incorrect pin mapping. Always confirm package dimensions and pinouts before substituting within the STF11 family.
How do regulatory statuses (RoHS3, ECCN EAR99, HTSUS 8541.29.0095) influence procurement and export decisions involving the STF11N50M2?
RoHS3 compliance ensures halogen-free and restricted substance adherence, simplifying global market access. ECCN EAR99 indicates the component is not subject to U.S. export restrictions, easing international supply chain logistics. HTSUS 8541.29.0095 classifies it under electronic integrated circuits, affecting customs valuation and duty calculations in North America. These classifications help streamline procurement, reduce compliance overhead, and support accurate tariff reporting—important for large-scale manufacturing planning.

Parts with Similar Specifications

The three parts on the right have similar specifications to STMicroelectronics STF11N50M2

Product Attribute STF11N60DM2 STF11N60M2-EP STF11N65M2 STF11N52K3
Part Number STF11N60DM2 STF11N60M2-EP STF11N65M2 STF11N52K3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Power Dissipation (Max) - - - -
FET Feature - - - -
Vgs(th) (Max) @ Id - - - -
Gate Charge (Qg) (Max) @ Vgs - - - -
Input Capacitance (Ciss) (Max) @ Vds - - - -
Current - Continuous Drain (Id) @ 25°C - - - -
Series - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Rds On (Max) @ Id, Vgs - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Drive Voltage (Max Rds On, Min Rds On) - - - -
FET Type - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Mounting Type - Surface Mount Through Hole Surface Mount
Vgs (Max) - - - -
Technology - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Drain to Source Voltage (Vdss) - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42

STF11N50M2 Datasheet PDF

Download STF11N50M2 pdf datasheets and STMicroelectronics documentation for STF11N50M2 - STMicroelectronics.

Datasheets
STx11N50M2.pdf
PCN Obsolescence/ EOL
Mult Dev OBS 3/Jul/2020.pdf

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Evaluation: 10 Articles

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    Jul 15, 2026

    Used this device in a communication signal processing board. Stable timing and no unexpected issues during implementation.

  • FPGA***lorer88
    Jul 7, 2026

    The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.

  • Nath***oleman
    Jun 29, 2026

    Used this sensor component in an industrial automation setup. Detection accuracy was consistent and installation was straightforward.

  • Emil***rperTech
    Jun 23, 2026

    Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.

  • Liam***terTech
    Jun 15, 2026

    Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

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STF11N50M2 Image

STF11N50M2

STMicroelectronics
32D-STF11N50M2

Want a better price? Add to Cart and Submit RFQ now, we'll contact you immediately.

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