Manufacturer Part Number
STI13NM60N
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
RoHS3 Compliant
TO-262-3 Long Leads, IPak, TO-262AA Package
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 11A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Power Dissipation (Max): 90W (Tc)
N-Channel FET Type
Vgs(th) (Max) @ Id: 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Through Hole Mounting Type
Product Advantages
High voltage capability
Low on-resistance
High current handling
Compact TO-262-3 package
Key Technical Parameters
Drain to Source Voltage (Vdss): 600 V
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Current Continuous Drain (Id) @ 25°C: 11A (Tc)
Power Dissipation (Max): 90W (Tc)
Quality and Safety Features
RoHS3 Compliant
Suitable for high-voltage and high-current applications
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Power supplies
Motor drives
Switching circuits
Industrial electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements or upgrades may be available in the future.
Several Key Reasons to Choose This Product
High voltage capability up to 600 V
Low on-resistance of 360mOhm
High current handling up to 11A
Compact and efficient TO-262-3 package
Suitable for a wide range of high-power electronic applications
Reliable and RoHS3 compliant design
STI13NK60ZSTMicroelectronics