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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleSTR2P3LLH6
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STR2P3LLH6 - STMicroelectronics

Manufacturer Part Number
STR2P3LLH6
Manufacturer
STMicroelectronics
Allelco Part Number
32D-STR2P3LLH6
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
238,730 pcs available, New & Original
Parts Description
MOSFET P-CH 30V 2A SOT-23
Package
SOT-23-3
Data sheet
STR2P3LLH6.pdf

Datasheets

STR2P3LLH6.pdf
RoHs Status
ROHS3 Compliant
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In stock: 238730
  • Unit Price: $0.063
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5+ $0.063 $0.32
50+ $0.052 $2.60
150+ $0.046 $6.90
500+ $0.042 $21.00
3000+ $0.036 $108.00
6000+ $0.035 $210.00
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

STR2P3LLH6 Tech Specifications
STMicroelectronics - STR2P3LLH6 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics - STR2P3LLH6

Product Attribute Attribute Value
Manufacturer STMicroelectronics
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-23-3
Series STripFET™ H6
Rds On (Max) @ Id, Vgs 56mOhm @ 1A, 10V
Power Dissipation (Max) 350mW (Tc)
Package / Case TO-236-3, SC-59, SOT-23-3
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 639 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Base Product Number STR2P3

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Parts Introduction

STR2P3LLH6 Image
STR2P3LLH6 (1)

Manufacturer Part Number

STR2P3LLH6

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

ROHS3 Compliant

Surface Mount Mounting Type

TO-236-3, SC-59, SOT-23-3 Package

P-Channel MOSFET

30V Drain to Source Voltage

±20V Gate to Source Voltage

56mOhm On-Resistance

2A Continuous Drain Current

639pF Input Capacitance

350mW Power Dissipation

5V Gate Threshold Voltage

5V/10V Drive Voltage

Product Advantages

Compact surface mount package

Low on-resistance for efficient power delivery

Wide operating voltage range

Key Technical Parameters

Drain to Source Voltage: 30V

Gate to Source Voltage: ±20V

On-Resistance: 56mOhm

Continuous Drain Current: 2A

Input Capacitance: 639pF

Power Dissipation: 350mW

Gate Threshold Voltage: 2.5V

Drive Voltage: 4.5V/10V

Quality and Safety Features

ROHS3 Compliant

Compatibility

Suitable for various electronic applications

Application Areas

Power management

Amplifier circuits

Switch mode power supplies

Product Lifecycle

Currently available

No information on discontinuation or replacements

Key Reasons to Choose

Compact surface mount package

Low on-resistance for efficient power delivery

Wide operating voltage range

Suitable for various power management applications

Frequently Asked Questions(FAQ)

What is the maximum continuous drain current and corresponding power dissipation for the STR2P3LLH6 at 25°C ambient temperature, and how does this impact thermal design in low-power applications?
The STR2P3LLH6 supports a continuous drain current of 2A (Id) at 25°C ambient conditions with a maximum power dissipation of 350mW when mounted on a heatsink (Tc). This relatively low power rating indicates that while the device can handle moderate current loads in surface-mount configurations, it requires careful attention to junction temperature management. In compact PCB layouts where natural convection cooling is limited, the thermal resistance between junction and case must be considered to prevent derating. For designs requiring sustained operation near 2A, external thermal vias or localized copper pours are typically necessary to maintain TJ below 150°C.
How does the Rds(on) of 56mΩ at Vgs=10V compare to alternative P-channel MOSFETs in the same voltage and current class, particularly regarding conduction losses in battery-powered systems?
With an Rds(on) of 56mΩ at Vgs=10V and Id=1A, the STR2P3LLH6 offers competitive on-resistance among small-signal P-MOSFETs rated for 30V and 2A. When conducting 2A continuously, this results in approximately 224mW of conduction loss—significantly lower than many older generation devices with Rds(on) exceeding 100mΩ. In battery-operated circuits such as USB power switches or Li-ion backup paths, this efficiency advantage translates into extended runtime and reduced heat buildup. Compared to similar components like the AO3401 or Si2302, the STR2P3LLH6 provides better performance due to its STripFET™ H6 architecture, which optimizes cell structure for lower resistance.
What gate drive requirements does the STR2P3LLH6 impose, and what implications does its threshold voltage have for interfacing with 3.3V logic controllers?
The STR2P3LLH6 has a maximum threshold voltage Vgs(th) of 2.5V at Id=250µA, enabling full enhancement even under modest gate drive. However, its Rds(on) reaches 56mΩ only when driven with Vgs=10V, indicating that optimal performance requires sufficient gate-source overdrive. While the device will turn on with Vgs as low as 4.5V, using a 3.3V microcontroller directly may result in higher Rds(on), increasing conduction losses. Designers should ensure adequate gate drive margin or consider level-shifting techniques if operating from a 3.3V supply. This behavior aligns with typical enhancement-mode P-MOSFET characteristics and necessitates careful assessment of system-level voltage budgets.
How does the gate charge (Qg) of 6nC at Vgs=4.5V influence switching speed in high-frequency load switching applications, and what driver considerations apply?
With a total gate charge Qg of 6nC at 4.5V, the STR2P3LLH6 exhibits moderate switching characteristics suitable for frequencies up to several hundred kHz. This value reflects the combined effect of input capacitance and Miller plateau during transition phases. In PWM-driven loads such as LED dimmers or motor control interfaces, faster switching reduces inductive ringing and EMI but increases switching losses. A typical gate resistor of 10–100Ω paired with a low-impedance driver (e.g., push-pull buffer) helps balance rise/fall times without excessive power loss. Given its SOT-23-3 packaging, parasitic inductance is minimized compared to larger alternatives, supporting cleaner edge transitions.
Can the STR2P3LLH6 safely switch inductive loads such as relays or solenoids, and what protection circuitry is recommended to prevent damage from back EMF?
Yes, the STR2P3LLH6 can switch moderate inductive loads like small relays or solenoid valves due to its 30V Vdss rating and robust SOA (Safe Operating Area). However, inductive kickback can generate transient voltages well above 30V, potentially exceeding the device’s breakdown limits. To protect the STR2P3LLH6, a freewheeling diode must be placed across the load with cathode to the source side and anode to the drain. Additionally, snubber networks (RC or TVS-based) may be required for heavy inductive loads. Proper layout minimizing loop area further enhances robustness against voltage spikes.
In what scenarios would the STR2P3LLH6 be preferred over a discrete N-channel MOSFET solution using a charge pump or bootstrap circuit?
The STR2P3LLH6 is advantageous when simplicity and cost are prioritized in low-to-medium current switching applications where the source is grounded relative to the load. Unlike N-channel devices requiring high-side gate driving via charge pumps or isolated supplies, the STR2P3LLH6 allows direct connection to ground-referenced control signals. This makes it ideal for battery cutoff circuits, power multiplexers, and load disconnect functions in space-constrained designs. Its integration into the STripFET™ H6 series also ensures reliability comparable to N-channel counterparts, while eliminating the complexity of negative gate drive generation.
How does the input capacitance (Ciss = 639pF @ 25V) affect noise immunity and stability in high-impedance gate drive paths?
The Ciss of 639pF introduces capacitive loading on the gate node, which can interact with source inductance and gate resistance to form a resonant circuit if not properly damped. In high-impedance driver stages—such as those using open-drain outputs without pull-up resistors—this may lead to unintended oscillations or ringing during turn-on. Adding a small gate resistor (e.g., 22–100Ω) suppresses these effects by introducing damping. Furthermore, in long gate traces, transmission line effects become relevant above ~10–20MHz, though typical switching frequencies for this device remain below that threshold.
What are the key differences between the STR2P3LLH6 and the base product STR2P3 in terms of performance optimization and application suitability?
The STR2P3LLH6 belongs to the STripFET™ H6 family, which incorporates advanced epitaxial layer structures and process refinements compared to earlier generations like the standard STR2P3. These improvements yield lower Rds(on), reduced gate charge, and enhanced ruggedness—critical for automotive-grade or industrial environments. While both share the same SOT-23-3 package and nominal ratings (30V, 2A), the H6 variant achieves better performance at elevated temperatures and under pulsed conditions. Designers selecting between them should evaluate whether legacy compatibility outweighs the efficiency gains offered by the newer H6 technology.
How does moisture sensitivity level (MSL) classification of 1 benefit manufacturing processes involving the STR2P3LLH6, and what handling precautions are still necessary?
An MSL of 1 means the STR2P3LLH6 is not sensitive to moisture-induced failures during reflow soldering and can be stored indefinitely under normal conditions without baking. This simplifies inventory management and assembly logistics, especially in high-volume production. However, ESD sensitivity remains inherent to all MOSFETs; proper handling procedures such as grounding mats, wrist straps, and conductive packaging are still essential. Even with MSL 1, prolonged exposure to humid environments before use could compromise long-term reliability if storage protocols are violated.
What role does the ±20V Vgs(max) specification play in protecting the STR2P3LLH6 during transient events like ESD or inductive feedback in harsh environments?
The ±20V gate-source voltage rating provides a safety margin beyond typical control voltages, allowing the STR2P3LLH6 to withstand brief overvoltages without gate oxide degradation. This is particularly valuable in industrial settings where inductive loads or cable discharges might inject transient spikes into the gate. Combined with robust ESD protection diodes internal to the device, this tolerance enables reliable operation without external clamping unless extreme transients are expected. Nevertheless, continuous operation near ±20V should be avoided to preserve threshold stability and long-term gate integrity.
How does the STR2P3LLH6 perform in terms of reverse recovery behavior when used in synchronous rectification or body diode conduction modes?
Although primarily designed as a signal-level switch, the STR2P3LLH6 includes an intrinsic body diode that conducts during dead time in bidirectional switching topologies. Its reverse recovery charge is not explicitly specified but is typical for planar P-MOSFETs in this class—moderate and fast enough for frequencies below 100kHz. In synchronous applications, however, dedicated synchronous rectifier ICs or optimized N-channel pairs are generally preferred for superior efficiency. The STR2P3LLH6’s body diode may suffice for low-cost buck converters or simple ORing circuits where complexity must be minimized.
What trade-offs exist between using the STR2P3LLH6 in linear versus switched mode, and how do these affect thermal performance?
In switched-mode operation, the STR2P3LLH6 operates in saturation or cut-off states, minimizing conduction and switching losses—ideal for efficiency-critical designs. Conversely, in linear mode (active region), it dissipates significant power proportional to (Vds × Id), making it unsuitable for high-current regulation. Given its 350mW max power dissipation, linear use is restricted to very low duty cycles or auxiliary functions like soft-start biasing. Most applications leverage the STR2P3LLH6’s strengths in digital switching, where rapid transitions reduce average loss despite finite gate charge and capacitance.
How does the choice of packaging—Cut Tape vs. Digi-Reel®—impact automated assembly workflows involving the STR2P3LLH6?
Cut tape provides individual units suitable for prototyping or mixed-component assemblies, while Digi-Reel® offers continuous reeled material optimized for pick-and-place machines. The latter enhances throughput and reduces placement errors in high-speed lines. Both formats maintain identical electrical and thermal properties, so selection depends solely on production volume and equipment compatibility. Suppliers often provide both options to accommodate diverse manufacturing strategies without requiring separate BOM entries for the same STR2P3LLH6 part number.
What considerations apply when cascading multiple STR2P3LLH6 devices in parallel for higher current sharing, and how stable is dynamic current distribution?
Parallel operation of STR2P3LLH6 devices demands careful matching of Rds(on) and Vgs(th) to avoid thermal runaway. Due to positive temperature coefficient of Rds(on), minor mismatches can lead to uneven current sharing, especially under dynamic conditions. External gate resistors and close layout symmetry help stabilize distribution. However, given the device’s 2A rating and small footprint, paralleling two units typically exceeds practical needs unless designing for redundancy or future scalability. Most engineers opt for single-device solutions with margin rather than risk instability.
How does the STR2P3LLH6 comply with international regulatory standards such as RoHS3 and REACH, and what documentation is typically provided for compliance verification?
The STR2P3LLH6 is fully RoHS3 compliant, meaning it meets stricter limits on hazardous substances including lead, mercury, cadmium, and phthalates. It is also REACH unaffected, indicating no SVHC (Substances of Very High Concern) content above regulatory thresholds. Manufacturers usually provide Certificates of Conformity, Declaration of RoHS Compliance, and full Material Composition Reports upon request. These documents support end-of-life disposal planning and global market access, particularly in automotive and medical sectors with stringent environmental requirements.
What impact does the operating junction temperature range up to 150°C have on reliability testing and qualification for consumer electronics using the STR2P3LLH6?
A maximum junction temperature of 150°C enables the STR2P3LLH6 to endure short-duration overloads and elevated ambient conditions common in enclosed consumer devices. However, long-term reliability under sustained high temperatures requires derating based on thermal resistance and actual power dissipation. Accelerated life tests (ALT) often simulate worst-case scenarios by stressing devices at elevated Tj to predict mean time between failures (MTBF). Designers must ensure that steady-state Tj stays comfortably below 125°C to meet industry expectations for 10+ year lifespans in applications like smart home peripherals or IoT nodes.
How does the STR2P3LLH6 compare to alternative P-MOSFETs like the IRLML6344 in terms of size, efficiency, and suitability for portable electronics?
While the IRLML6344 offers lower Rds(on) (~140mΩ) and higher current capability, it uses an SC70 package with higher thermal resistance, making it less ideal for tightly packed portable designs. The STR2P3LLH6’s SOT-23-3 package provides superior thermal performance per unit volume and easier hand-soldering. Though its absolute efficiency is slightly lower at high currents, its compact form factor and proven reliability make it preferable for battery-powered systems where board real estate is constrained. Trade-offs depend on specific current levels and cooling constraints.
What layout best practices should be followed when routing signals near the STR2P3LLH6 to minimize parasitic inductance and ensure fast, clean switching?
Keep gate traces short and direct, avoiding stubs or vias near the gate pin. Use wide, low-impedance connections for source and drain to reduce loop inductance. Place decoupling capacitors within 2mm of the device’s supply pins if used as a power switch. Avoid routing sensitive analog signals adjacent to the STR2P3LLH6 to prevent coupling through stray capacitance. Ground plane continuity beneath the component enhances heat dissipation and reduces electromagnetic emissions—critical for meeting FCC and CE standards in consumer products.

Parts with Similar Specifications

The three parts on the right have similar specifications to STMicroelectronics STR2P3LLH6

Product Attribute STR2P3LLH6 STR2N2VH5 STR30115 STR2N2VH5 MOS
Part Number STR2P3LLH6 STR2N2VH5 STR30115 STR2N2VH5 MOS
Manufacturer STMicroelectronics STMicroelectronics SK STMicroelectronics
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.5V, 4.5V - -
FET Feature - - - -
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 2.3A (Tj) - -
Input Capacitance (Ciss) (Max) @ Vds 639 pF @ 25 V 367 pF @ 16 V - -
Package Tape & Reel (TR) Tape & Reel (TR) - -
FET Type P-Channel N-Channel - -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 - -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) - -
Rds On (Max) @ Id, Vgs 56mOhm @ 1A, 10V 30mOhm @ 2A, 4.5V - -
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V 4.6 nC @ 4.5 V - -
Drain to Source Voltage (Vdss) 30 V 20 V - -
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) - -
Vgs (Max) ±20V ±8V - -
Base Product Number STR2P3 STR2N2 - -
Mounting Type Surface Mount Surface Mount - -
Power Dissipation (Max) 350mW (Tc) 350mW (Tc) - -
Vgs(th) (Max) @ Id 2.5V @ 250µA 700mV @ 250µA (Min) - -
Supplier Device Package SOT-23-3 SOT-23-3 - -
Series STripFET™ H6 STripFET™ V - -

STR2P3LLH6 Datasheet PDF

Download STR2P3LLH6 pdf datasheets and STMicroelectronics documentation for STR2P3LLH6 - STMicroelectronics.

Datasheets
STR2P3LLH6.pdf
PCN Assembly/Origin
Cover Tape Supplier 16/Sep/2021.pdf

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Customer Reviews

Evaluation: 10 Articles

  • ECUb***h
    Sep 22, 2026

    Used for repair of an older automotive ECU. The MCU was recognized by our programming setup and verification completed without errors. The repaired board now starts and communicates normally.

  • RS48***ieldTech
    Sep 16, 2026

    Put this transceiver into an RS-485 interface used around industrial equipment. Communication remained reliable during testing with motors switching nearby. Good result for the replacement board.

  • Logi***b_Chris
    Sep 8, 2026

    Purchased for a Cyclone III development project. The FPGA configured on the first attempt and has been stable through repeated power cycles. No problems with the I/O we are using.

  • Circ***FixerTom
    Sep 2, 2026

    Used this rectifier in a high-current power supply repair. Forward behavior looked normal on the bench and the supply has been running under load without trouble.

  • Retr***UWorks
    Aug 31, 2026

    Needed the exact ST10F269Z2Q6 for servicing an older control unit. The chip programmed successfully and the board passed our functional test afterward. Much easier than redesigning around a newer MCU.

  • Andr***PCBLab
    Aug 28, 2026

    I needed this ADC for an older data acquisition board. Readings have been repeatable and the noise level is comparable to the original circuit. Happy with the purchase.

  • Leat***O'Keefe
    Aug 20, 2026

    one of my hobbies is skydiving. and when i'm skydiving this works great.

  • Ilen***
    Aug 20, 2026

    This product works considerably well. It secretly improves my basketball by a lot.

  • Indu***ialPower
    Aug 17, 2026

    Installed this IGBT module in a power conversion cabinet. Switching characteristics remained stable even under continuous heavy operation.

  • Nikh***ech
    Aug 13, 2026

    Great low-power MCU for portable equipment. Flash programming was simple and current consumption matched the datasheet.

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STR2P3LLH6 Image

STR2P3LLH6

STMicroelectronics
32D-STR2P3LLH6

Want a better price? Add to Cart and Submit RFQ now, we'll contact you immediately.

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