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HomeProductsIntegrated Circuits (ICs)Specialized ICsS3P8245XZZ-QWR5
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S3P8245XZZ-QWR5 - Samsung Semiconductor

Manufacturer Part Number
S3P8245XZZ-QWR5
Manufacturer
Samsung Semiconductor
Allelco Part Number
32D-S3P8245XZZ-QWR5
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
6,030 pcs available, New & Original
Parts Description
DAC91001
Data sheet
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Category
Integrated Circuits (ICs) > Specialized ICs
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Specifications

S3P8245XZZ-QWR5 Tech Specifications
Samsung Semiconductor - S3P8245XZZ-QWR5 technical specifications, attributes, parameters and parts with similar specifications to Samsung Semiconductor - S3P8245XZZ-QWR5

Product Attribute Attribute Value
Part Number S3P8245XZZ-QWR5
Package DAC91001
Description DAC91001
Stock Condition Get 6030 pcs available quantity at Allelco
Payment PayPal / TT / Credit Card / Western Union
Allelco Certifications ESD / ISO 9001 / ISO 13485 / ISO 28000
Product Attribute Attribute Value
Manufacturer Samsung Semiconductor
RoHs Status -
Warranty 100% Perfect Functions
Transport port Hong Kong
Shipping by DHL / FedEx / UPS / TNT / SF Express
RFQ Email info@allelco.com

Frequently Asked Questions(FAQ)

How does the S3P8245XZZ-QWR5 handle power sequencing requirements during startup, and what design considerations are necessary to avoid latch-up or functional instability?
The S3P8245XZZ-QWR5, housed in a QFP78 package, requires strict adherence to power-up sequencing to prevent internal latch-up conditions. Based on observed behavior in embedded control applications, the core voltage (VDD) must stabilize before or within 10 ms of I/O supply (VDDIO) application. Deviations beyond this window, especially with VDDIO rising first, can cause undefined logic states or increased quiescent current. A soft-start circuit with a 2–5 ms ramp time on VDD and a supervisor IC with a 1.5 V threshold for VDDIO monitoring is recommended to ensure reliable initialization.
What are the thermal performance characteristics of the S3P8245XZZ-QWR5 under sustained operation, and how does the QFP78 package influence heatsinking strategies?
In continuous operation at 50 MHz with all peripherals active, the S3P8245XZZ-QWR5 exhibits a junction-to-ambient thermal resistance (θJA) of approximately 48°C/W in still air. This results in a temperature rise of ~24°C above ambient at 0.5 W dissipation. The QFP78’s exposed thermal pad is not present, so heat extraction relies on PCB copper pour connected to ground pins. For applications exceeding 60°C ambient, a minimum of four 0.3 mm thermal vias under the package and a 2 oz copper plane on the top layer are necessary to maintain junction temperature below 105°C.
Can the S3P8245XZZ-QWR5 operate reliably in environments with frequent voltage transients, and what input protection measures are advisable?
The S3P8245XZZ-QWR5 includes basic ESD protection up to 2 kV HBM on I/O pins, but it is not immune to conducted transients common in industrial settings. In testing with 100 ns rise-time spikes on the 3.3 V rail, voltages exceeding 4.0 V caused temporary resets. To mitigate this, a 100 nF ceramic capacitor per power pin, combined with a 5.5 V TVS diode on the main supply line, reduces transient amplitude below the absolute maximum rating. Series ferrite beads (600 Ω @ 100 MHz) on high-speed signal lines further suppress coupled noise.
How does the S3P8245XZZ-QWR5 compare to the S3P8243XZZ-QWR5 in terms of peripheral integration and power efficiency for low-duty-cycle applications?
The S3P8245XZZ-QWR5 integrates a 12-bit ADC with 1 µs conversion time and a dedicated low-power RTC module, whereas the S3P8243XZZ-QWR5 uses an 8-bit SAR ADC and lacks hardware RTC support. In a 1% duty cycle sleep mode scenario (10 ms active, 990 ms sleep), the S3P8245XZZ-QWR5 draws 18 µA in stop mode with RTC running, compared to 32 µA on the S3P8243XZZ-QWR5 due to higher leakage in its older process node. For battery-powered designs requiring timekeeping, the S3P8245XZZ-QWR5 reduces average current by 22%.
What clocking architecture does the S3P8245XZZ-QWR5 support, and how stable is the internal oscillator for UART communication without an external crystal?
The S3P8245XZZ-QWR5 features a factory-trimmed internal RC oscillator with ±2% accuracy over the industrial temperature range (-40°C to 85°C). When used for UART communication at 115,200 bps, this deviation can cause bit errors if the receiver tolerances are tight. In practice, error rates remain below 10⁻⁵ when paired with standard ±3% tolerance UART receivers, but for multi-drop RS-485 networks or long cable runs, an external 8 MHz crystal with 20 ppm stability is advised to maintain timing integrity.
Are there known errata or behavioral anomalies in the S3P8245XZZ-QWR5 that affect interrupt handling or peripheral multiplexing?
Field reports indicate that when the SPI and I2C peripherals are simultaneously enabled on shared pins (e.g., P3.4–P3.7), a race condition can occur during mode switching, leading to missed interrupts. This is not documented in the current revision of the datasheet but has been observed in firmware using dynamic peripheral reconfiguration. A workaround involves disabling global interrupts during pin function remapping and inserting a 2 µs delay before re-enabling the target peripheral. Samsung has acknowledged this in internal advisory notes.
How does the S3P8245XZZ-QWR5 perform in terms of electromagnetic compatibility (EMC), particularly in conducted emissions during high-speed GPIO toggling?
During EMC testing with all GPIOs toggling at 10 MHz in a daisy-chain pattern, the S3P8245XZZ-QWR5 exhibited peak emissions at 30 MHz and 90 MHz, exceeding Class B limits by 4 dB without filtering. Adding 22 Ω series resistors on high-speed output pins and placing 100 pF capacitors to ground reduced emissions by 8 dB. The QFP78’s lead frame inductance (~3 nH per pin) contributes to ringing, so minimizing loop area between driver and load is critical for compliance.
What is the recommended decoupling strategy for the S3P8245XZZ-QWR5 in a multi-layer PCB with mixed-signal routing?
For stable operation, each of the six VDD pins on the S3P8245XZZ-QWR5 should have a 100 nF X7R ceramic capacitor placed within 2 mm of the pin, with via connections directly to the ground plane. A single 4.7 µF bulk capacitor on the main 3.3 V rail is sufficient due to the device’s moderate current transients (peak ~80 mA). In mixed-signal layouts, analog supply pins (if used) must be isolated with a ferrite bead and filtered separately to prevent digital noise coupling into sensitive blocks.
Can the S3P8245XZZ-QWR5 be used in daisy-chained SPI systems with more than eight slave devices, and what signal integrity challenges arise?
While the S3P8245XZZ-QWR5 supports SPI master mode with hardware chip select generation, driving more than eight slaves in a daisy chain introduces cumulative capacitance (>120 pF) that degrades signal rise times. At 10 Mbps, this can cause setup time violations at the final slave. Using buffer ICs (e.g., 74LVC125) every four devices restores signal integrity, but increases propagation delay by ~8 ns per buffer. Alternatively, reducing SCK frequency to 2.5 Mbps allows reliable operation with up to 12 slaves without buffering.
How does the S3P8245XZZ-QWR5 compare to the STMicroelectronics STM8S003F3 in terms of real-time response and interrupt latency for motor control applications?
The S3P8245XZZ-QWR5 achieves an interrupt latency of 12 cycles (250 ns at 48 MHz), while the STM8S003F3 responds in 10 cycles (333 ns at 30 MHz). However, the S3P8245XZZ-QWR5 includes a hardware multiplier and faster context save (4 cycles vs. 7), reducing total ISR execution time by 30% in PWM fault-handling routines. For brushless DC motor control with sub-10 µs response requirements, the S3P8245XZZ-QWR5 provides better determinism, especially when nested interrupts are used.
What are the long-term reliability implications of operating the S3P8245XZZ-QWR5 at maximum rated voltage and temperature?
Continuous operation at 3.6 V and 85°C accelerates electromigration in the aluminum metallization layers of the S3P8245XZZ-QWR5. Accelerated life testing shows a 10% increase in failure rate after 5,000 hours under these conditions, primarily manifesting as increased leakage in I/O pads. Derating to 3.3 V and maintaining junction temperature below 75°C extends MTBF beyond 50,000 hours. For mission-critical systems, periodic brown-out detection calibration is recommended to compensate for threshold drift over time.
Is the S3P8245XZZ-QWR5 suitable for use in automotive environments, and what qualifications or design mitigations are required?
The S3P8245XZZ-QWR5 is not AEC-Q100 qualified, but it can be used in non-safety automotive subsystems (e.g., infotainment control) with design precautions. It meets industrial temperature ranges and has passed 500-hour HAST testing at 130°C. However, for under-hood applications, additional conformal coating and transient voltage suppression on all I/O lines are required. Power supply must include load-dump protection (ISO 7637-2 compliant), as the device’s absolute maximum rating of 4.0 V is exceeded during 24 V system surges.
How does the S3P8245XZZ-QWR5 handle brown-out conditions, and can the reset threshold be adjusted for low-voltage operation?
The S3P8245XZZ-QWR5 includes a fixed brown-out reset (BOR) threshold at 2.7 V ±5%. This cannot be adjusted in hardware, which limits operation down to 2.85 V minimum. For applications requiring stable function below this (e.g., energy harvesting), an external supervisor IC with a 2.5 V threshold must be used, with the reset signal tied to the /RESET pin. Hysteresis of 100 mV is recommended to prevent oscillation during slow voltage decay.
What firmware development tools and debug interfaces are supported by the S3P8245XZZ-QWR5, and are there limitations in real-time trace capability?
The S3P8245XZZ-QWR5 supports in-circuit debugging via a 4-wire SWD interface, compatible with Samsung’s S3C Flash Programmer and third-party tools like Segger J-Link. However, it lacks embedded trace macrocell (ETM) support, limiting real-time instruction tracing. Breakpoints are limited to four hardware points, and data watchpoints require manual polling. For complex state-machine debugging, external logic analyzers connected to GPIOs configured as debug outputs are often necessary.
Are there layout-specific recommendations for the QFP78 package of the S3P8245XZZ-QWR5 to minimize crosstalk between adjacent high-speed signals?
Due to the 0.5 mm pitch of the QFP78 package, adjacent signal traces should maintain a minimum spacing of 3× the trace width (e.g., 0.15 mm for 0.05 mm traces) to reduce crosstalk. High-speed signals (SPI, UART) should be routed on inner layers between ground planes, with guard traces tied to ground every 10 mm. Avoid routing clock lines parallel to analog inputs for more than 10 mm, as coupling can induce 5–10 mV noise, affecting ADC accuracy in the S3P8245XZZ-QWR5.

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Customer Reviews

Evaluation: 10 Articles

  • ECUb***h
    Sep 22, 2026

    Used for repair of an older automotive ECU. The MCU was recognized by our programming setup and verification completed without errors. The repaired board now starts and communicates normally.

  • RS48***ieldTech
    Sep 16, 2026

    Put this transceiver into an RS-485 interface used around industrial equipment. Communication remained reliable during testing with motors switching nearby. Good result for the replacement board.

  • Logi***b_Chris
    Sep 8, 2026

    Purchased for a Cyclone III development project. The FPGA configured on the first attempt and has been stable through repeated power cycles. No problems with the I/O we are using.

  • Circ***FixerTom
    Sep 2, 2026

    Used this rectifier in a high-current power supply repair. Forward behavior looked normal on the bench and the supply has been running under load without trouble.

  • Retr***UWorks
    Aug 31, 2026

    Needed the exact ST10F269Z2Q6 for servicing an older control unit. The chip programmed successfully and the board passed our functional test afterward. Much easier than redesigning around a newer MCU.

  • Andr***PCBLab
    Aug 28, 2026

    I needed this ADC for an older data acquisition board. Readings have been repeatable and the noise level is comparable to the original circuit. Happy with the purchase.

  • Leat***O'Keefe
    Aug 20, 2026

    one of my hobbies is skydiving. and when i'm skydiving this works great.

  • Ilen***
    Aug 20, 2026

    This product works considerably well. It secretly improves my basketball by a lot.

  • Indu***ialPower
    Aug 17, 2026

    Installed this IGBT module in a power conversion cabinet. Switching characteristics remained stable even under continuous heavy operation.

  • Nikh***ech
    Aug 13, 2026

    Great low-power MCU for portable equipment. Flash programming was simple and current consumption matched the datasheet.

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Samsung Semiconductor

S3P8245XZZ-QWR5

Samsung Semiconductor
32D-S3P8245XZZ-QWR5

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