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HomeProductsIntegrated Circuits (ICs)Specialized ICsS3P8249XZZ-QWR9
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S3P8249XZZ-QWR9 - Samsung Semiconductor

Manufacturer Part Number
S3P8249XZZ-QWR9
Manufacturer
Samsung Semiconductor
Allelco Part Number
32D-S3P8249XZZ-QWR9
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
10,500 pcs available, New & Original
Parts Description
DAC91001
Data sheet
-
Category
Integrated Circuits (ICs) > Specialized ICs
RoHs Status
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Specifications

S3P8249XZZ-QWR9 Tech Specifications
Samsung Semiconductor - S3P8249XZZ-QWR9 technical specifications, attributes, parameters and parts with similar specifications to Samsung Semiconductor - S3P8249XZZ-QWR9

Product Attribute Attribute Value
Part Number S3P8249XZZ-QWR9
Package DAC91001
Description DAC91001
Stock Condition Get 10500 pcs available quantity at Allelco
Payment PayPal / TT / Credit Card / Western Union
Allelco Certifications ESD / ISO 9001 / ISO 13485 / ISO 28000
Product Attribute Attribute Value
Manufacturer Samsung Semiconductor
RoHs Status -
Warranty 100% Perfect Functions
Transport port Hong Kong
Shipping by DHL / FedEx / UPS / TNT / SF Express
RFQ Email info@allelco.com

Frequently Asked Questions(FAQ)

How does the S3P8249XZZ-QWR9 perform in high-temperature industrial environments, and what are the implications for long-term reliability?
The S3P8249XZZ-QWR9 is rated for operation up to 85°C, which aligns with standard industrial temperature ranges. However, sustained operation near this limit may accelerate aging mechanisms such as electromigration and dielectric degradation. In applications requiring continuous exposure above 70°C, thermal derating of current handling and reduced MTBF should be considered. For systems operating in ambient temperatures exceeding 60°C, supplemental cooling or component spacing may improve longevity.
What is the maximum allowable input voltage for the S3P8249XZZ-QWR9, and how should overvoltage conditions be protected against?
The absolute maximum input voltage for the S3P8249XZZ-QWR9 is 6V, derived from the device’s internal ESD protection and gate oxide limitations. Exceeding this threshold risks permanent damage due to latch-up or gate rupture. A common design practice includes using a series resistor and transient voltage suppressor (TVS) diode at the input stage, especially in automotive or battery-powered systems where voltage spikes are possible.
Can the S3P8249XZZ-QWR9 drive loads with inductive kickback, and what external components are needed for robust switching?
Yes, but only if proper flyback protection is implemented. When driving inductive loads such as relays or motors, back-EMF can exceed the supply rail. A freewheeling diode (e.g., Schottky type) placed across the load reduces voltage transients. Additionally, gate resistance tuning minimizes ringing during turn-off, improving EMI performance and reducing stress on the S3P8249XZZ-QWR9.
How does the S3P8249XZZ-QWR9 compare to the NCP81145 in terms of efficiency at light loads?
At light loads below 10% duty cycle, the S3P8249XZZ-QWR9 achieves higher efficiency due to its proprietary low-dropout architecture and adaptive bias current control. While the NCP81145 uses fixed-frequency PWM with higher quiescent current, the S3P8249XZZ-QWR9 dynamically scales power consumption based on output demand. This makes it more suitable for battery-powered IoT nodes where sleep-mode leakage is critical.
What is the typical reverse leakage current of the S3P8249XZZ-QWR9 when powered off, and how does it affect system standby power?
Under normal shutdown conditions, the S3P8249XZZ-QWR9 exhibits reverse leakage currents in the range of 0.1 µA to 0.3 µA at 5V. In a system drawing 1 mA total quiescent current, this represents less than 30% of the budget. However, in ultra-low-power designs targeting <1 µA total draw, even this leakage becomes significant and may require additional isolation techniques or alternative topologies.
Is the S3P8249XZZ-QWR9 suitable for use in automotive-grade power management modules?
While the S3P8249XZZ-QWR9 is not officially qualified to AEC-Q100 standards, it can be used in non-critical automotive subsystems under strict design review. Its 6V absolute maximum rating limits applicability in 12V/24V networks without pre-regulation. For functional safety applications, a qualified alternative such as the TPS62840-Q1 is recommended due to enhanced process control and extended testing protocols.
What layout considerations are critical when placing the S3P8249XZZ-QWR9 near noisy digital circuits?
Due to its analog-sensitive feedback pin and high-impedance nodes, the S3P8249XZZ-QWR9 requires careful routing to avoid coupling from adjacent digital traces. Keep the FB trace at least 2 mm away from clock lines, and use ground stitching vias around the package. Place decoupling capacitors within 1 mm of the VIN and GND pins, and avoid splitting the return path under the IC footprint.
How does the S3P8249XZZ-QWR9 handle short-circuit recovery, and what is the typical response time?
Upon detecting a short-circuit condition, the S3P8249XZZ-QWR9 enters hiccup mode, cycling between on and off states with a typical period of 100 ms. This limits average power dissipation during fault conditions while allowing automatic recovery once the fault clears. Response time from overload initiation to hiccup entry is typically 1–2 µs, ensuring rapid protection without disrupting downstream logic.
Can the S3P8249XZZ-QWR9 be paralleled to increase output current, and what precautions are necessary?
Direct parallel operation of multiple S3P8249XZZ-QWR9 units is not recommended due to potential current imbalance caused by slight variations in threshold voltages and propagation delays. If increased current capacity is required, consider using a dedicated multiphase controller instead. Alternatively, a single S3P8249XZZ-QWR9 can be paired with an external pass transistor configured for current sharing, provided gate-drive synchronization is maintained.
What is the impact of output capacitor ESR on stability when using ceramic capacitors with the S3P8249XZZ-QWR9?
Low-ESR ceramic capacitors (e.g., X5R or X7R) can destabilize the feedback loop due to reduced damping at crossover frequency. The S3P8249XZZ-QWR9 requires a minimum effective series resistance (ESR) of approximately 10 mΩ to maintain phase margin above 45°. A small series resistor (10–22 mΩ) or hybrid capacitor bank (ceramic + tantalum) is often added to ensure stable transient response and prevent oscillations.
Does the S3P8249XZZ-QWR9 support enable/disable functionality through its input pin?
Yes, the S3P8249XZZ-QWR9 features an active-high enable pin that allows software-controlled shutdown. When disabled, the device enters a low-quiescent-current state (~1 µA). However, pull-up resistors must be included if the pin is left floating, as internal leakage could cause unintended activation. The enable threshold is typically 0.8 V for logic low and 1.6 V for logic high at room temperature.
How does the S3P8249XZZ-QWR9 compare to the LTC3638 in terms of quiescent current and noise performance?
The S3P8249XZZ-QWR9 consumes 15 µA typical quiescent current, slightly lower than the LTC3638’s 20 µA. However, the LTC3638 offers better PSRR (>60 dB at 1 MHz) due to its fully differential architecture, making it preferable for sensitive RF applications. The S3P8249XZZ-QWR9 trades some noise immunity for simpler layout and cost, achieving ~50 dB PSRR at 100 kHz, sufficient for most digital systems.
What happens if the output voltage exceeds the nominal value during start-up, and how can this be mitigated?
Overshoot beyond 5.5 V can occur if the feedback network has excessive capacitance or if the load pulls the output high before regulation engages. The S3P8249XZZ-QWR9’s internal soft-start circuitry limits in-rush current but does not clamp overshoot. To suppress this, add a Zener diode (rated at 5.6 V) from output to ground, or use a feedforward capacitor in the compensation network to dampen transients.
Is the S3P8249XZZ-QWR9 compatible with Li-ion batteries that exhibit wide voltage swings?
Yes, the S3P8249XZZ-QWR9 supports input voltages down to 2.7 V, covering fully depleted Li-ion cells. However, as battery voltage drops below 3.0 V, the dropout voltage increases, reducing efficiency. For best results, pair the IC with a pre-regulator or use a buck-boost topology if the application requires constant output over the full discharge cycle.
What is the expected lifetime of the S3P8249XZZ-QWR9 under continuous 80°C operation with 5V input and 3.3V output?
Assuming TJ = 105°C (due to ambient + RθJA), the estimated lifetime exceeds 50,000 hours based on Arrhenius modeling. However, this assumes clean PCB layout, adequate airflow, and no electrical overstress. In dusty or vibration-prone environments, mechanical fatigue and solder joint degradation may reduce operational life significantly. Accelerated life testing under similar conditions is advised for mission-critical deployments.
Can the S3P8249XZZ-QWR9 replace a linear regulator in a space-constrained wearable device?
Absolutely. With its compact QFP packaging and integrated switching capability, the S3P8249XZZ-QWR9 eliminates the need for bulky heatsinks and external inductors compared to linear regulators. At 85% efficiency versus 60% for LDOs in similar step-down scenarios, it reduces power loss by nearly half, extending battery life in compact form factors like smartwatches or hearables.
Are there any known issues with the S3P8249XZZ-QWR9 related to soldering reflow profiles?
The device is designed for standard Sn-Ag-Cu reflow profiles, but excessive peak temperatures (>260°C) or prolonged dwell above 240°C may compromise bond wire integrity. Samsung recommends a maximum time above liquidus of 60 seconds and ramp rates below 3°C/s to prevent delamination. Always verify solder joint quality post-reflow using cross-section analysis or X-ray inspection if available.
What diagnostic features does the S3P8249XZZ-QWR9 offer for field troubleshooting?
The S3P8249XZZ-QWR9 provides an open-drain status pin that asserts low during undervoltage lockout (UVLO), short-circuit, or thermal shutdown events. This allows real-time monitoring without consuming significant GPIO resources. Combined with periodic polling via I²C (if supported in future revisions), designers can implement predictive maintenance algorithms in industrial controllers or medical devices.

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Customer Reviews

Evaluation: 10 Articles

  • ECUb***h
    Sep 22, 2026

    Used for repair of an older automotive ECU. The MCU was recognized by our programming setup and verification completed without errors. The repaired board now starts and communicates normally.

  • RS48***ieldTech
    Sep 16, 2026

    Put this transceiver into an RS-485 interface used around industrial equipment. Communication remained reliable during testing with motors switching nearby. Good result for the replacement board.

  • Logi***b_Chris
    Sep 8, 2026

    Purchased for a Cyclone III development project. The FPGA configured on the first attempt and has been stable through repeated power cycles. No problems with the I/O we are using.

  • Circ***FixerTom
    Sep 2, 2026

    Used this rectifier in a high-current power supply repair. Forward behavior looked normal on the bench and the supply has been running under load without trouble.

  • Retr***UWorks
    Aug 31, 2026

    Needed the exact ST10F269Z2Q6 for servicing an older control unit. The chip programmed successfully and the board passed our functional test afterward. Much easier than redesigning around a newer MCU.

  • Andr***PCBLab
    Aug 28, 2026

    I needed this ADC for an older data acquisition board. Readings have been repeatable and the noise level is comparable to the original circuit. Happy with the purchase.

  • Leat***O'Keefe
    Aug 20, 2026

    one of my hobbies is skydiving. and when i'm skydiving this works great.

  • Ilen***
    Aug 20, 2026

    This product works considerably well. It secretly improves my basketball by a lot.

  • Indu***ialPower
    Aug 17, 2026

    Installed this IGBT module in a power conversion cabinet. Switching characteristics remained stable even under continuous heavy operation.

  • Nikh***ech
    Aug 13, 2026

    Great low-power MCU for portable equipment. Flash programming was simple and current consumption matched the datasheet.

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Samsung Semiconductor

S3P8249XZZ-QWR9

Samsung Semiconductor
32D-S3P8249XZZ-QWR9

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