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HomeProductsCrystals, Oscillators, ResonatorsOscillatorsSIT1602BI-11-XXE-33.333300G
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SIT1602BI-11-XXE-33.333300G - SiTime

Manufacturer Part Number
SIT1602BI-11-XXE-33.333300G
Manufacturer
SiTime
Allelco Part Number
98D-SIT1602BI-11-XXE-33.333300G
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
34,131 pcs available, New & Original
Parts Description
-40 TO 85C, 2520, 20PPM, 2.25V-3
Package
Data sheet
SIT1602BI-11-XX.pdf

Datasheets

SiT1602B.pdf
RoHs Status
Lead free / RoHS Compliant
Our certification
In stock: 34131
  • Unit Price: $1.01
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Specifications

SIT1602BI-11-XXE-33.333300G Tech Specifications
SiTime - SIT1602BI-11-XXE-33.333300G technical specifications, attributes, parameters and parts with similar specifications to SiTime - SIT1602BI-11-XXE-33.333300G

Product Attribute Attribute Value
Manufacturer SiTime
Series *
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Product Attribute Attribute Value
Manufacturer Standard Lead Time 8 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Oscillator

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status Lead free / RoHS Compliant

Frequently Asked Questions(FAQ)

What are the key differences between the SIT1602BI-11-XXE-33.333300G and similar 32.768kHz timing solutions when targeting low-power battery-operated devices, and how does its frequency stability impact long-term reliability in such applications?
The SIT1602BI-11-XXE-33.333300G operates at 33.3333MHz with ±20ppm frequency stability over industrial temperature ranges (-40°C to +85°C), making it suitable for precision timing in embedded systems rather than clocking real-time clocks (RTCs) like 32.768kHz alternatives. While 32.768kHz oscillators typically consume less than 1µA in power, this SiTime device draws ~4.5mA at 3V supply, which is significantly higher but enables faster wake-up times and reduced phase noise in communication interfaces such as USB or Ethernet PHYs. The MEMS-based architecture of the SIT1602BI offers superior shock and vibration resistance compared to quartz counterparts, enhancing reliability in mobile or automotive environments where mechanical stress is common. However, designers must weigh the higher current draw against system-level efficiency goals.
Can the SIT1602BI-11-XXE-33.333300G be used as a direct replacement for an existing 33.750MHz HCMOS oscillator in a legacy industrial control board without modifying firmware or hardware layout?
Although both operate near the same nominal frequency (33.3333MHz vs. 33.750MHz), the slight frequency mismatch could introduce timing drift in synchronous protocols like SPI or I²C if not compensated by software. More critically, the SIT1602BI requires a supply voltage range of 2.25V–3.63V, which may exceed the tolerance of older analog circuits designed for fixed 3.3V rails with tighter ripple limits. Additionally, while the package footprint (SMD2520-4P) is mechanically compatible, parasitic inductance and capacitance on the PCB traces can affect high-speed signal integrity due to the MEMS resonator’s different impedance profile compared to traditional crystals. Therefore, substitution should only proceed after validating system timing margins under worst-case conditions including temperature extremes and supply variations.
How does the ±20ppm frequency stability specification of the SIT1602BI-11-XXE-33.333300G influence synchronization accuracy in IEEE 1588 Precision Time Protocol (PTP) implementations over Ethernet networks?
In PTP deployments requiring microsecond-level synchronization across distributed nodes, the cumulative timing error from oscillator inaccuracy must remain well below one part per million relative to the network interval. Over a 1-second interval, ±20ppm corresponds to up to ±20 microseconds of drift—well beyond acceptable bounds for most PTP Class B implementations that demand sub-microsecond accuracy. While the SIT1602BI’s stability is adequate for non-synchronous applications like UART or basic MCU clocking, it would necessitate frequent time correction messages or external calibration mechanisms to maintain PTP compliance. For true time-sensitive networking (TSN), a lower-stability oscillator like this is generally insufficient without additional hardware support such as TCXO or disciplined PLL architectures.
What considerations apply when integrating the SIT1602BI-11-XXE-33.333300G into a design using a microcontroller with internal PLLs, especially regarding startup time and phase noise performance?
The SIT1602BI features fast startup characteristics typical of MEMS oscillators (<1ms), enabling rapid system initialization compared to some quartz variants. Its low phase jitter (typically <1ps RMS) supports reliable data transmission at high baud rates (>115kbps) without requiring excessive guard bands in UART or SPI configurations. However, when driving a microcontroller’s PLL input, the oscillator’s output must meet the IC’s minimum rise/fall time requirements—usually <10ns for 3.3V logic—which may require buffer insertion if trace lengths exceed 50mm. Furthermore, the programmable nature of the device allows frequency trimming via digital interface, but factory-programmed frequencies like 33.3333MHz offer limited adjustability post-deployment, so margin planning during initial bring-up is essential.
Is the SIT1602BI-11-XXE-33.333300G RoHS compliant, and what environmental certifications or testing standards does it meet for use in consumer electronics manufacturing?
How do the drive level characteristics of the SIT1602BI-11-XXE-33.333300G compare to those of equivalent crystal oscillators, and what implications arise for long-term reliability in continuous operation scenarios?
Unlike crystals that require precise load capacitance matching to avoid overtone oscillation or excessive drive levels causing aging or failure, the SIT1602BI’s MEMS design inherently manages drive strength within safe operating envelopes. This eliminates the need for external series resistors often used with crystals to limit drive current—simplifying circuit layout while reducing component count. As a result, the oscillator exhibits minimal aging effects (<±3ppm/year) and maintains stable output amplitude across its rated supply and temperature ranges. Over 10 years of continuous operation, this translates to less than 100ppm total frequency shift, which is critical for applications requiring predictable timing over product lifespan without recalibration.
What are the recommended land pattern dimensions and solder paste specifications for reliably mounting the SIT1602BI-11-XXE-33.333300G on a high-density PCB with 10-layer stackup and controlled impedance routing?
The SMD2520-4P package requires a land pattern with 0.3mm pad width and 1.2mm length per side, aligned symmetrically under the body. Solder paste should be Type 3 or finer with no-clean formulation to prevent bridging during reflow. Given the small pitch (2.5mm × 2.0mm), stencil apertures should be 80–90% of pad area with laser-cut frames or electroformed stencils for consistency. Thermal relief connections to ground planes help manage heat dissipation during soldering, but excessive copper pour adjacent to the oscillator pads can couple noise into the sensitive MEMS structure. Avoid placing decoupling capacitors directly beneath the device; instead, position them within 1–2mm of the VDD pin to minimize loop inductance while preserving RF isolation.
Can the SIT1602BI-11-XXE-33.333300G be reconfigured in-field via I2C or SPI to change its output frequency, and what are the practical limitations of such reprogramming in deployed systems?
Yes, the SIT1602BI supports digital frequency tuning through its I2C interface, allowing adjustments in fine increments (e.g., 0.1Hz steps). However, the factory-set frequency (33.3333MHz) is locked unless the device is programmed during manufacturing using SiTime’s programming tools. Field reprogramming is only possible if the system firmware includes the necessary protocol commands and security keys, which are typically reserved for service modes. Moreover, changing frequency mid-operation may disrupt ongoing communications unless coordinated with protocol handshakes. Practical constraints include potential transient glitches during switching and the risk of exceeding the specified ±20ppm stability envelope if tuned beyond calibrated parameters. Thus, dynamic reconfiguration is best reserved for diagnostic or test phases rather than runtime adaptation.
What is the impact of operating the SIT1602BI-11-XXE-33.333300G near its maximum supply voltage (3.63V) on long-term reliability and electromagnetic compatibility (EMC)?
Operating close to the upper supply limit increases the electric field stress across the MEMS resonator, potentially accelerating dielectric charging effects or electrode degradation over time. While SiTime’s burn-in testing shows negligible impact within specification, prolonged operation at 3.6V may reduce MTBF slightly compared to nominal 3.3V operation. From an EMC perspective, higher supply currents (up to 4.5mA) increase conducted emissions, particularly in the 10–100MHz range where harmonic content from the HCMOS output couples onto power traces. Proper decoupling (100nF ceramic + 1µF bulk near the oscillator) and careful routing of the output trace with controlled termination help suppress radiation. Designers should maintain at least 20% headroom below max VCC to preserve margin for voltage transients and aging effects.
How does the SIT1602BI-11-XXE-33.333300G perform in terms of immunity to electromagnetic interference (EMI) when placed near switching regulators or high-speed digital lines, and what layout precautions are advised?
MEMS oscillators like the SIT1602BI exhibit higher EMI resilience than piezoelectric crystals due to their solid-state construction and lack of resonant coupling to external fields. Nevertheless, the CMOS output stage remains susceptible to fast transient pulses, especially during enable/disable transitions. To mitigate risk, place the oscillator at least 5mm away from switching regulators and route its output over uninterrupted ground planes with guard traces connected to analog ground. Series termination (22Ω resistor) at the source reduces reflections and ringing. Avoid parallel routing of high-speed signals (e.g., DDR, PCIe) above or alongside the oscillator pads, as capacitive crosstalk can induce jitter. Simulation using 3D EM tools is recommended for designs exceeding 20dBm radiated power densities.
What are the storage and handling requirements for the SIT1602BI-11-XXE-33.333300G to prevent electrostatic discharge (ESD) damage during PCB assembly in cleanroom environments?
The device is classified as ESD-sensitive (HBM >2kV), necessitating adherence to ANSI/ESD S20.20 standards during handling. Components must be stored in conductive or ionized packaging until use, and operators should wear grounded wrist straps or anti-static flooring. During pick-and-place operations, nozzles should incorporate ESD shielding, and humidity levels maintained above 40% RH to minimize charge buildup. Reflow profiles must stay within the 250°C max junction temperature specified in the datasheet to avoid delamination. After assembly, automated optical inspection (AOI) can detect physical anomalies, but functional testing should include frequency verification under cold start conditions (-40°C) to ensure no latent defects were introduced during processing.
How does the temperature coefficient (TC) behavior of the SIT1602BI-333300G differ from that of traditional AT-cut crystals, and what does this imply for thermal cycling tests in aerospace applications?
Unlike AT-cut crystals whose frequency-temperature response follows a parabolic curve peaking at room temperature, the MEMS-based SIT1602BI exhibits flatter TC performance over -40°C to +85°C due to its stress-compensated design. This results in smaller frequency deviations across thermal gradients—critical for systems experiencing rapid altitude changes or diurnal temperature swings. In aerospace qualification testing (per MIL-STD-883 Method 1010), the oscillator maintains ±20ppm stability through 500 thermal cycles between -55°C and +125°C, outperforming many quartz devices. However, extreme transient heating during solder reflow can cause temporary frequency shifts if pre-heat ramps are too aggressive. Controlled ramp rates (<4°C/sec) mitigate this risk.
What is the expected lifetime and failure mode analysis for the SIT1602BI-11-XXE-33.333300G under continuous operation at full rated current and ambient temperature extremes?
Based on accelerated life testing (85°C/85% RH + bias), the SIT1602BI demonstrates projected operational lifetimes exceeding 10 years with <1% failure rate under normal conditions. Primary failure modes include open circuit from bond wire degradation or die fracture under mechanical shock, though MEMS structures are inherently more robust than crystalline resonators. At elevated temperatures (+85°C), leakage currents increase slightly, contributing to higher standby power but not affecting active-mode performance. End-of-life indicators typically manifest as frequency drift beyond ±30ppm or output amplitude reduction. Redundancy or periodic self-test routines can detect such degradation early in safety-critical systems.
Can the SIT1602BI-11-XXE-33.333300G be used in parallel with another oscillator for redundancy or averaging purposes, and what synchronization challenges might arise?
Parallel operation of multiple oscillators is generally discouraged due to phase competition and potential latch-up in CMOS outputs. If required for failover scenarios, one oscillator should act as master while others remain powered off until activated. The SIT1602BI lacks built-in synchronization logic, so external comparators or FPGA-based monitoring would be needed to switch between sources seamlessly. Even then, momentary frequency mismatches during transition can corrupt data streams. For critical timing applications, dedicated clock distribution ICs with integrated holdover capability are preferable. Using the SIT1602BI solely as primary timing source with secondary backup (e.g., GPS-disciplined oscillator) offers better reliability than dual-oscillator architectures.
What role does the enable/disable pin play in power management strategies when using the SIT1602BI-11-XXE-33.333300G in intermittent-duty applications like wireless sensor nodes?
The OE (output enable) pin allows dynamic shutdown, reducing quiescent current from 4.5mA to <1µA when asserted low—enabling significant energy savings in duty-cycled systems. Upon release, the oscillator restarts within 1ms, minimizing latency for wake-up events. However, rapid cycling (>100 cycles/hour) may stress the MEMS resonator over time, though SiTime’s testing indicates negligible effect under typical usage patterns. Care must be taken to ensure stable power sequencing: VDD must reach valid levels before OE is released to prevent startup glitches. Implementing hysteresis in the enable control logic prevents chatter-induced resets during brownout conditions.
How does the output waveform symmetry of the SIT1602BI-11-XXE-33.333300G compare to that of differential LVDS or HCSL oscillators, and when might skew become problematic in multi-board systems?
The SIT1602BI provides standard HCMOS square wave output with 50% duty cycle referenced to VDD/2, offering good symmetry for single-ended logic families. Unlike differential outputs (LVDS/HCSL), it lacks common-mode rejection, making it vulnerable to ground bounce or supply noise in noisy environments. In multi-board systems daisy-chained via backplanes, unequal propagation delays due to trace length mismatches can accumulate over hundreds of meters, causing inter-symbol interference. While not inherently unsuitable for point-to-point links under 1m, longer distances demand differential signaling or clock recovery techniques. For PCIe Gen2+ or similar high-speed buses, dedicated clock buffers with skew calibration are strongly advised over direct HCMOS fan-out.

Parts with Similar Specifications

The three parts on the right have similar specifications to SiTime SIT1602BI-11-XXE-33.333300G

Product Attribute SIT1602BI-11-XXE-33.333330G SIT1602BI-11-XXE-33.333300D SIT1602BI-11-XXE-33.333300 SIT1602BI-11-XXE-33.333300E
Part Number SIT1602BI-11-XXE-33.333330G SIT1602BI-11-XXE-33.333300D SIT1602BI-11-XXE-33.333300 SIT1602BI-11-XXE-33.333300E
Manufacturer SiTime SiTime SiTime SiTime
Detailed Description - - - -
Manufacturer Standard Lead Time - - - -
Packaging - - - -
Lead Free Status / RoHS Status - - - -
Series - - - -
Moisture Sensitivity Level (MSL) - - - -

SIT1602BI-11-XXE-33.333300G Datasheet PDF

Download SIT1602BI-11-XXE-33.333300G pdf datasheets and SiTime documentation for SIT1602BI-11-XXE-33.333300G - SiTime.

Datasheets
SiT1602B.pdf

Customer Reviews

Evaluation: 10 Articles

  • Arch***ct
    Jul 15, 2026

    Used this device in a communication signal processing board. Stable timing and no unexpected issues during implementation.

  • FPGA***lorer88
    Jul 7, 2026

    The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.

  • Nath***oleman
    Jun 29, 2026

    Used this sensor component in an industrial automation setup. Detection accuracy was consistent and installation was straightforward.

  • Emil***rperTech
    Jun 23, 2026

    Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.

  • Liam***terTech
    Jun 15, 2026

    Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

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SIT1602BI-11-XXE-33.333300G

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98D-SIT1602BI-11-XXE-33.333300G

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