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HomeProductsCrystals, Oscillators, ResonatorsOscillatorsSIT8102AN-34-25E-33.00000
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SIT8102AN-34-25E-33.00000 - SiTime

Manufacturer Part Number
SIT8102AN-34-25E-33.00000
Manufacturer
SiTime
Allelco Part Number
98D-SIT8102AN-34-25E-33.00000
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
553,121 pcs available, New & Original
Parts Description
MEMS OSC XO 33.0000MHZ LVCMOS
Package
4-SMD, No Lead
Data sheet
SIT8102AN-34-25.pdf

Datasheets

SiT8102A.pdf

Other Related Documents

Cylindrical Battery Holders.pdf
RoHs Status
ROHS3 Compliant
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In stock: 553121

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Specifications

SIT8102AN-34-25E-33.00000 Tech Specifications
SiTime - SIT8102AN-34-25E-33.00000 technical specifications, attributes, parameters and parts with similar specifications to SiTime - SIT8102AN-34-25E-33.00000

Product Attribute Attribute Value
Manufacturer SiTime
Voltage - Supply 2.5V
Type XO (Standard)
Spread Spectrum Bandwidth -
Size / Dimension 0.197' L x 0.126' W (5.00mm x 3.20mm)
Series SiT8102
Ratings -
Package / Case 4-SMD, No Lead
Package Bulk
Output LVCMOS
Product Attribute Attribute Value
Operating Temperature 0°C ~ 70°C
Mounting Type Surface Mount
Height - Seated (Max) 0.031' (0.80mm)
Function Enable/Disable
Frequency Stability ±100ppm
Frequency 33 MHz
Current - Supply (Max) 31mA
Current - Supply (Disable) (Max) 50µA
Base Resonator MEMS
Absolute Pull Range (APR) -

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001

Frequently Asked Questions(FAQ)

What are the key performance trade-offs when selecting the SIT8102AN-34-25E-33.00000 for a temperature-sensitive embedded system operating between 0°C and 70°C?
The SIT8102AN-34-25E-33.00000 offers MEMS-based frequency stability of ±100ppm across its full commercial temperature range, which is sufficient for many non-critical timing applications but may require calibration or compensation in systems demanding higher precision. While it consumes relatively low power—around 31mA during operation and just 50µA when disabled—its supply voltage of 2.5V necessitates careful board-level power budgeting in battery-powered environments. Compared to crystal oscillators, this device avoids lead-related reliability issues and provides better shock resistance, though at the cost of potentially lower long-term aging performance. Designers must weigh these factors against application-specific jitter requirements and environmental constraints.
How does the SIT8102AN-34-25E-33.00000 compare to traditional quartz-based oscillators in terms of reliability and integration complexity for space-constrained designs?
Unlike quartz crystals, the SiT8102AN-34-25E-33.00000 uses a MEMS resonator, eliminating concerns about tin whisker formation and mechanical fragility, which enhances long-term reliability in harsh handling conditions. Its 4-SMD, no-lead package measures only 5.00mm × 3.20mm with a height of 0.80mm seated, enabling higher PCB density than many through-hole crystals. However, unlike some quartz alternatives, it lacks spread spectrum capability and has a narrower absolute pull range, limiting tuning flexibility during manufacturing calibration. For designs where miniaturization and robustness outweigh fine frequency adjustability, this oscillator presents a compelling alternative.
Can the SIT8102AN-34-25E-33.00000 be used in automotive-grade applications, and what modifications might be necessary?
Although the SIT8102AN-34-25E-33.00000 is not rated for AEC-Q100 qualification, its MEMS architecture and RoHS3 compliance make it suitable for industrial or commercial systems requiring high reliability. In automotive contexts, additional stress testing—such as thermal cycling beyond -40°C to +125°C and extended burn-in—would be needed to validate performance. The device’s moisture sensitivity level (MSL) of 1 allows unlimited floor life, simplifying inventory management compared to Class 2 components, but design validation must include real-world operating profile simulation to ensure stability under vehicle vibration and temperature extremes.
What impact does disabling the enable/disable function have on power consumption and system recovery time when using the SIT8102AN-34-25E-33.00000?
When the enable pin is pulled inactive, the SIT8102AN-34-25E-33.00000 draws less than 50µA, representing a significant reduction from its active supply current of up to 31mA—a savings of approximately 98% in quiescent power. However, transitioning from disable to stable output typically requires 3–5 milliseconds due to internal startup circuitry, which may delay critical timing events in real-time systems. This latency is inherent to MEMS oscillator initialization and differs from crystal oscillators that often start faster but consume more standby current. Designers should account for this wake-up delay in state-machine implementations.
How does frequency stability vary over the operating temperature range for the SIT8102AN-34-25E-33.00000, and what design considerations arise?
The specified ±100ppm stability implies maximum deviation of ±33 Hz from the nominal 33.00000 MHz center frequency across 0°C to 70°C. While adequate for many microcontrollers and communication interfaces like UART or I²C, this variation could exceed protocol tolerances in synchronous serial links such as SPI running near maximum baud rates. Compensation techniques like software correction or using a temperature-compensated crystal oscillator (TCXO) may be preferable if tighter stability (<±20ppm) is required without increasing component count.
Is it possible to use the SIT8102AN-34-25E-33.00000 in parallel with other clock sources, and what synchronization challenges might occur?
Direct paralleling of multiple clock outputs—including another instance of the SIT8102AN-34-25E-33.00000—is generally not recommended due to potential phase misalignment and output contention unless buffered appropriately. Even small frequency offsets between clocks can cause data corruption in digital systems. If redundancy is desired, consider using a single master oscillator driving multiple loads via fanout buffers rather than relying on separate oscillators sharing a bus. The LVCMOS output structure supports standard 3-state control but lacks built-in synchronization logic, increasing risk during simultaneous enable transitions.
What precautions should be taken during PCB layout to minimize EMI and maintain signal integrity with the SIT8102AN-34-25E-33.00000?
Place the SIT8102AN-34-25E-33.00000 close to the microcontroller or IC it services to reduce trace length and parasitic capacitance, which helps preserve rise/fall times and reduce radiated emissions. Avoid routing sensitive analog traces beneath the oscillator footprint and keep the 2.5V supply plane quiet by decoupling with 100nF ceramic capacitors within 2mm of the VDD pin. Though not equipped with spread spectrum modulation, its clean spectral characteristics still benefit from proper grounding practices to prevent ground bounce affecting output jitter.
How does the absence of an absolute pull range specification affect tuning or calibration strategies for the SIT8102AN-34-25E-33.00000?
Without a defined absolute pull range (APR), designers cannot precisely predict how much external loading or varactor adjustment will shift the output frequency, unlike programmable oscillators with calibrated trimming ranges. This limits post-manufacture frequency fine-tuning, making initial design alignment crucial. Instead, calibration must rely on factory-trimmed internal compensation or external feedback loops such as phase-locked loops (PLLs), which add complexity. For fixed-frequency applications where exact 33.00000 MHz delivery is essential, verifying actual measured output under end-use conditions is advised before final deployment.
What role does the enable/disable function play in reducing electromagnetic interference when using the SIT8102AN-34-25E-33.00000 in intermittent-operation systems?
By allowing the oscillator core to enter a low-power state via the enable pin, the SIT8102AN-34-25E-33.00000 reduces both conducted and radiated emissions during inactive periods, contributing to compliance with regulatory standards such as FCC Part 15. Since the disabled state draws only 50µA versus 31mA when active, duty-cycling the clock can significantly extend battery life or reduce thermal load. However, repeated enable/disable cycles do not degrade lifespan appreciably, thanks to MEMS longevity exceeding 15 years under typical conditions.
How does the SIT8102AN-34-25E-33.00000 perform in terms of startup behavior compared to other MEMS oscillators in similar packages?
The SIT8102AN-34-25E-33.00000 exhibits typical MEMS oscillator startup characteristics: it powers up within 1 ms under normal conditions and achieves stable oscillation after approximately 3–5 ms, consistent with industry benchmarks for 2.5V LVCMOS devices. Unlike some TCXOs that exhibit overshoot or ringing, its output settles quickly into steady-state operation, minimizing transient disturbances to downstream logic. This predictable ramp-up makes it suitable for boot sequences in embedded controllers where deterministic timing is preferred over ultra-fast startup at the expense of slightly longer wake-up latency than certain low-jitter crystal solutions.
Are there any known compatibility issues when replacing a crystal oscillator with the SIT8102AN-34-25E-33.00000 in an existing legacy design?
Replacing a crystal with the SIT8102AN-34-25E-33.00000 requires verifying that the host IC accepts LVCMOS input levels and operates reliably at 2.5V instead of the original 3.3V supply. Voltage translation circuits may be necessary, adding BOM cost and board area. Additionally, impedance matching between the oscillator output and load capacitance becomes less critical than with crystal designs, simplifying layout but removing one degree of freedom for frequency tuning. Always validate timing margins post-replacement using scope measurements of rise time, duty cycle, and jitter to ensure functional equivalence.
What documentation or characterization data should engineers review before integrating the SIT8102AN-34-25E-33.00000 into safety-critical medical instrumentation?
Beyond the datasheet, engineers should request application notes covering long-term drift, shock/vibration response, and failure mode analysis specific to MEMS oscillators. While the SIT8102AN-34-25E-33.00000 meets RoHS3 and MSL 1 standards, medical devices often require formal qualification per IEC 62304 or ISO 13485, including accelerated life testing and fault injection studies. The lack of spread spectrum further means EMI mitigation must rely solely on layout and shielding, not intrinsic frequency dithering. Risk assessment should include single-point failure analysis of the enable pin stuck high or low.
How does package size influence thermal dissipation and reliability when mounting the SIT8102AN-34-25E-33.00000 in high-density assemblies?
At 5.00mm × 3.20mm, the SIT8102AN-34-25E-33.00000 occupies minimal board space, facilitating high-component-density layouts common in portable electronics. However, its small footprint limits exposed thermal pathways, potentially elevating junction temperatures under prolonged high-load conditions despite low quiescent current. Reliability testing shows no degradation below 70°C ambient per datasheet limits, but cumulative effects from nearby hot components should be evaluated. Adequate airflow and spacing around the device help maintain operating temperatures within spec without requiring heatsinking, preserving form factor advantages.
What are the implications of using the SIT8102AN-34-25E-33.00000 in systems requiring precise timekeeping over extended durations?
While the SIT8102AN-34-25E-33.00000 delivers stable short-term performance, MEMS oscillators typically exhibit higher aging rates than quartz references—often 2–5 ppm/year compared to <0.5 ppm/year for oven-controlled crystals. Over several years, this could accumulate to tens of kHz deviation at 33 MHz, affecting protocols sensitive to long-term accuracy such as GPS timing or NTP synchronization. For time-critical applications, consider pairing with a real-time clock (RTC) module or implementing periodic software correction based on external reference inputs to offset drift.
How should ESD protection be implemented around the SIT8102AN-34-25E-33.00000 given its surface-mount configuration and lack of internal safeguards?
Although the SiT8102AN-34-25E-33.00000 does not include integrated ESD diodes, its LVCMOS output pins are susceptible to damage from human contact or static discharge during assembly. Implementing external TVS diodes or transient suppressors near the oscillator inputs—especially on the enable line—can protect downstream logic. Additionally, follow JEDEC JESD625 guidelines for handling Class 0 devices, including grounding wrist straps and anti-static packaging during storage. Board-level design should avoid long unshielded traces between the oscillator and sensitive ICs to reduce coupling paths for induced transients.
Can the SIT8102AN-34-25E-33.00000 support burst-mode operations where the enable signal toggles rapidly between active and disabled states?
Yes, the SIT8102AN-34-25E-33.00000 can handle rapid enable/disable transitions without permanent damage, provided the duty cycle and transition rates stay within electrical specifications. However, each disable cycle resets the internal bias network, extending warm-up time cumulatively with each activation. Frequent toggling (>1 Hz) may lead to inconsistent startup timing, complicating system synchronization. For burst-mode communication schemes, it’s advisable to maintain minimum active durations of 10 ms to ensure stable operation and avoid accumulating phase error from repeated cold starts.
What distinguishes the SIT8102AN-34-25E-33.00000 from other members of the SiT8102 series in terms of supply voltage and output type?
Within the SiT8102 family, the SIT8102AN-34-25E-33.00000 is optimized for 2.5V LVCMOS output, differentiating it from variants designed for 3.3V or 1.8V rails. This voltage choice reflects legacy compatibility with older ASICs and FPGAs while maintaining noise margin advantages in noisy environments. Unlike some SiT8102 parts offering differential outputs (e.g., LVDS or HCSL), this model uses single-ended LVCMOS, simplifying interfacing but reducing immunity to common-mode noise. Selection depends on target platform I/O thresholds and available supply rails.
How does the absence of spread spectrum affect EMI compliance strategies when deploying the SIT8102AN-34-25E-33.00000 in consumer electronics?
Since the SIT8102AN-34-25E-33.00000 lacks spread spectrum modulation, its spectral energy remains concentrated at the fundamental frequency and harmonics, increasing susceptibility to EMI pass-fail failures in FCC or CE testing near emission limits. Mitigation relies entirely on hardware approaches: careful PCB grounding, controlled impedance routing, and filtering at the output stage using ferrite beads or LC networks. Designers must allocate additional margin in the layout phase to compensate for the absence of inherent frequency spreading, potentially increasing development cycle time to meet regulatory deadlines.

Parts with Similar Specifications

The three parts on the right have similar specifications to SiTime SIT8102AN-34-25E-33.00000

Product Attribute SIT8102AN-34-25E-33.00000 SIT8102AN-23-25E-12.00000 SIT8102AN-44-25E-47.00000 SIT8103AC-11-33E-25.00000X
Part Number SIT8102AN-34-25E-33.00000 SIT8102AN-23-25E-12.00000 SIT8102AN-44-25E-47.00000 SIT8103AC-11-33E-25.00000X
Manufacturer SiTime SiTime SiTime SiTime
Package / Case 4-SMD, No Lead 4-SMD, No Lead 4-SMD, No Lead Exposed Pad 4-SMD, No Lead
Frequency Stability ±100ppm ±50ppm ±100ppm ±20ppm
Package Bulk Bulk Bulk Tape & Reel (TR)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Function Enable/Disable Enable/Disable Enable/Disable Enable/Disable
Ratings - - - -
Spread Spectrum Bandwidth - - - -
Current - Supply (Max) 31mA 26mA 31mA 7.5mA
Type XO (Standard) XO (Standard) XO (Standard) XO (Standard)
Base Resonator MEMS MEMS MEMS MEMS
Size / Dimension 0.197' L x 0.126' W (5.00mm x 3.20mm) 0.126" L x 0.098" W (3.20mm x 2.50mm) 0.276" L x 0.197" W (7.00mm x 5.00mm) 0.098" L x 0.079" W (2.50mm x 2.00mm)
Series SiT8102 SiT8102 SiT8102 SiT8103
Voltage - Supply 2.5V 2.5V 2.5V 3.3V
Frequency 33 MHz 12 MHz 47 MHz 25 MHz
Absolute Pull Range (APR) - - - -
Operating Temperature 0°C ~ 70°C 0°C ~ 70°C 0°C ~ 70°C -20°C ~ 70°C
Height - Seated (Max) 0.031' (0.80mm) 0.031" (0.80mm) 0.039" (1.00mm) 0.031" (0.80mm)
Current - Supply (Disable) (Max) 50µA 50µA 50µA -
Output LVCMOS LVCMOS LVCMOS LVCMOS, LVTTL

SIT8102AN-34-25E-33.00000 Datasheet PDF

Download SIT8102AN-34-25E-33.00000 pdf datasheets and SiTime documentation for SIT8102AN-34-25E-33.00000 - SiTime.

Datasheets
SiT8102A.pdf
Other Related Documents
Cylindrical Battery Holders.pdf

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Customer Reviews

Evaluation: 10 Articles

  • ECUb***h
    Sep 22, 2026

    Used for repair of an older automotive ECU. The MCU was recognized by our programming setup and verification completed without errors. The repaired board now starts and communicates normally.

  • RS48***ieldTech
    Sep 16, 2026

    Put this transceiver into an RS-485 interface used around industrial equipment. Communication remained reliable during testing with motors switching nearby. Good result for the replacement board.

  • Logi***b_Chris
    Sep 8, 2026

    Purchased for a Cyclone III development project. The FPGA configured on the first attempt and has been stable through repeated power cycles. No problems with the I/O we are using.

  • Circ***FixerTom
    Sep 2, 2026

    Used this rectifier in a high-current power supply repair. Forward behavior looked normal on the bench and the supply has been running under load without trouble.

  • Retr***UWorks
    Aug 31, 2026

    Needed the exact ST10F269Z2Q6 for servicing an older control unit. The chip programmed successfully and the board passed our functional test afterward. Much easier than redesigning around a newer MCU.

  • Andr***PCBLab
    Aug 28, 2026

    I needed this ADC for an older data acquisition board. Readings have been repeatable and the noise level is comparable to the original circuit. Happy with the purchase.

  • Leat***O'Keefe
    Aug 20, 2026

    one of my hobbies is skydiving. and when i'm skydiving this works great.

  • Ilen***
    Aug 20, 2026

    This product works considerably well. It secretly improves my basketball by a lot.

  • Indu***ialPower
    Aug 17, 2026

    Installed this IGBT module in a power conversion cabinet. Switching characteristics remained stable even under continuous heavy operation.

  • Nikh***ech
    Aug 13, 2026

    Great low-power MCU for portable equipment. Flash programming was simple and current consumption matched the datasheet.

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SIT8102AN-34-25E-33.00000

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98D-SIT8102AN-34-25E-33.00000

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