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Home Products Discrete Semiconductor Products Diodes - Rectifiers - Single~~1N5393GHB0G~~

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1N5393GHB0G - Taiwan Semiconductor Corporation

Manufacturer Part Number: 1N5393GHB0G

Manufacturer: Taiwan Semiconductor

Allelco Part Number: 98D-1N5393GHB0G

Warranty: 1 Year Allelco Warranty - Find out more

Stock Status:: 4,039 pcs available, New & Original

Parts Description: DIODE GEN PURP 200V 1.5A DO204AC

Package: DO-204AC (DO-15)

Data sheet: 1N5393GHB0G.pdf

Datasheets
1N5391G - 1N5399G.pdf

RoHs Status: ROHS3 Compliant

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In stock: 4039

Specifications

1N5393GHB0G Tech Specifications
Taiwan Semiconductor Corporation - 1N5393GHB0G technical specifications, attributes, parameters and parts with similar specifications to Taiwan Semiconductor Corporation - 1N5393GHB0G

Product Attribute	Attribute Value
Manufacturer	Taiwan Semiconductor
Voltage - Forward (Vf) (Max) @ If	1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max)	200 V
Technology	Standard
Supplier Device Package	DO-204AC (DO-15)
Speed	Standard Recovery >500ns, > 200mA (Io)
Series	Automotive, AEC-Q101
Package / Case	DO-204AC, DO-15, Axial

Product Attribute	Attribute Value
Package	Bulk
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Through Hole
Current - Reverse Leakage @ Vr	5 µA @ 200 V
Current - Average Rectified (Io)	1.5A
Capacitance @ Vr, F	15pF @ 4V, 1MHz
Base Product Number	1N5393

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
RoHs Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99

Frequently Asked Questions(FAQ)

How does the 1N5393GHB0G perform in high-temperature automotive environments compared to standard commercial rectifier diodes?: The 1N5393GHB0G is qualified to AEC-Q101 standards with a junction temperature range of -55°C to 150°C, making it suitable for under-hood or engine compartment applications where thermal cycling and sustained high ambient temperatures are expected. Unlike commercial-grade diodes that may derate sharply above 125°C, this device maintains stable reverse leakage characteristics—typically 5 µA at 200 V—even near its upper temperature limit, reducing risk of thermal runaway in compact power stages.

What are the key trade-offs when selecting the 1N5393GHB0G over a fast-recovery diode like the EGP20D in a 50 kHz switching power supply?: While the EGP20D offers faster reverse recovery (<200 ns), the 1N5393GHB0G has a standard recovery time exceeding 500 ns, which can lead to higher switching losses and EMI at 50 kHz. However, its lower forward voltage (1 V at 1.5 A) reduces conduction losses in low-frequency or line-frequency rectification. For applications prioritizing efficiency at moderate frequencies with robust thermal handling, the 1N5393GHB0G may still be viable if snubber circuits are used to manage turn-off transients.

Can the 1N5393GHB0G be used in a 120 VAC-to-DC bridge rectifier supplying a 1.2 A load without a heatsink?: Yes, but with careful thermal design. At 1.2 A average current, the power dissipation is approximately 1.2 W (based on 1 V forward drop). The DO-204AC package has a typical thermal resistance of ~50°C/W junction-to-ambient, resulting in a ~60°C rise above ambient. In a 40°C environment, this keeps the junction near 100°C—well within limits. However, in enclosed or high-ambient scenarios (>60°C), a small heatsink is recommended to maintain long-term reliability.

How does reverse leakage current in the 1N5393GHB0G behave under partial derating at elevated temperatures?: Reverse leakage increases exponentially with temperature. At 200 V reverse bias, leakage is specified as 5 µA at 25°C, but can exceed 50 µA at 125°C. While still low in absolute terms, this becomes significant in high-impedance sensing circuits or battery-powered systems where standby current matters. Designers should account for this in leakage-sensitive paths, especially when operating near the upper end of the temperature range.

Is the 1N5393GHB0G a suitable drop-in replacement for the 1N5393GP-E3/54 in an existing through-hole PCB layout?: Mechanically and electrically, yes—both share the DO-204AC (DO-15) axial package and identical pinout. The 1N5393GHB0G offers improved automotive-grade qualification (AEC-Q101) and broader temperature operation compared to the commercial-grade 1N5393GP-E3/54. However, verify that the application’s environmental stresses (e.g., vibration, thermal cycling) justify the higher-grade part, as cost and sourcing may differ.

What input voltage ripple and surge conditions can the 1N5393GHB0G tolerate in industrial motor drive applications?: With a 200 V DC reverse voltage rating, the 1N5393GHB0G can handle brief inductive kickback spikes common in relay or motor circuits, provided transient energy is limited. However, it lacks explicit surge current ratings (e.g., I²t), so repeated high-energy transients should be clamped with TVS diodes or RC snubbers. Its 1.5 A average rating assumes sinusoidal half-wave conditions; for pulsed loads, derating per the manufacturer’s surge curves is advised.

How does junction capacitance (15 pF at 4 V, 1 MHz) impact performance in a high-frequency rectification stage using the 1N5393GHB0G?: The 15 pF capacitance is relatively low for a 1.5 A rectifier, which helps minimize capacitive feedthrough in high-impedance nodes. However, at frequencies above 100 kHz, this capacitance forms a low-impedance path that can couple noise or reduce efficiency in precision rectifiers. In such cases, consider ultrafast or Schottky alternatives, though the 1N5393GHB0G remains acceptable for 50/60 Hz to ~20 kHz applications like offline power supplies.

Why would an engineer choose the 1N5393GHB0G over a surface-mount equivalent like the EGP20D-E3/73 in a new design?: The 1N5393GHB0G’s through-hole DO-204AC package offers superior mechanical robustness in high-vibration environments such as automotive or industrial equipment. It also simplifies hand rework and thermal management in prototypes. While the EGP20D-E3/73 provides better high-frequency performance in a compact SMD footprint, the 1N5393GHB0G excels in durability, ease of assembly, and thermal resilience where board space is less constrained.

Does the 1N5393GHB0G require special handling or storage considerations due to moisture sensitivity?: No. With an MSL rating of 1 (unlimited floor life), the 1N5393GHB0G can be stored and handled under normal ambient conditions without dry packing or baking. This simplifies logistics and reduces risk during prototyping or low-volume production compared to moisture-sensitive SMD components.

How does the forward voltage drop of the 1N5393GHB0G compare to similar 1.5 A rectifiers under pulsed load conditions?: At 1.5 A continuous, the forward drop is 1 V, but under pulsed loads (e.g., 3 A for 10 ms), it may rise to ~1.2–1.3 V due to junction heating and dynamic resistance. This is typical for standard recovery silicon rectifiers. Compared to Schottky diodes with lower Vf but higher leakage, the 1N5393GHB0G offers a balanced compromise for cost-sensitive, thermally managed systems where reverse leakage must be minimized.

Parts with Similar Specifications

The three parts on the right have similar specifications to Taiwan Semiconductor Corporation 1N5393GHB0G

Product Attribute
Part Number	1N5393GHR0G	1N5393G B0G	1N5393GHA0G	1N5393G A0G
Manufacturer	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation	Taiwan Semiconductor Corporation
Series	-	-	-	-
Current - Average Rectified (Io)	-	-	-	-
Voltage - DC Reverse (Vr) (Max)	-	-	-	-
Operating Temperature - Junction	-	-	-	-
Voltage - Forward (Vf) (Max) @ If	-	-	-	-
Package	-	Tape & Reel (TR)	Tube	Tape & Reel (TR)
Capacitance @ Vr, F	-	-	-	-
Supplier Device Package	-	196-NFBGA (12x12)	16-PDIP	64-VQFN (9x9)
Technology	-	-	-	-
Speed	-	-	-	-
Package / Case	-	196-LFBGA	16-DIP (0.300', 7.62mm)	64-VFQFN Exposed Pad
Current - Reverse Leakage @ Vr	-	-	-	-
Mounting Type	-	Surface Mount	Through Hole	Surface Mount
Base Product Number	-	DAC34H84	MAX500	ADS62P42

1N5393GHB0G Datasheet PDF

Download 1N5393GHB0G pdf datasheets and Taiwan Semiconductor Corporation documentation for 1N5393GHB0G - Taiwan Semiconductor Corporation.

Datasheets: 1N5391G - 1N5399G.pdf

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Reliable FPGA with predictable behavior. Configuration and testing went smoothly, making development faster than expected.
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Jul 15, 2026

Used this device in a communication signal processing board. Stable timing and no unexpected issues during implementation.
FPGA***lorer88

Jul 7, 2026

The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.
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Used this sensor component in an industrial automation setup. Detection accuracy was consistent and installation was straightforward.
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Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.
Liam***terTech

Jun 15, 2026

Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.
Nath***rooks

Jun 11, 2026

Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.
Dani***alkerTech

Jun 1, 2026

Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.
Yuki***aka88

May 26, 2026

信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。
Stev***aker

May 20, 2026

Solid diode for power rectification. Works well in switching circuits.

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1N5393GHB0G

Taiwan Semiconductor Corporation
98D-1N5393GHB0G

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