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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - SingleS4M M6G
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S4M M6G - Taiwan Semiconductor Corporation

Manufacturer Part Number
S4M M6G
Manufacturer
Taiwan Semiconductor
Allelco Part Number
98D-S4M M6G
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
5,483 pcs available, New & Original
Parts Description
DIODE GEN PURP 4A DO214AB
Package
DO-214AB (SMC)
Data sheet
S4M M6G.pdf

Datasheets

S4A - S4M.pdf

PCN Part Status Change

Mult Dev NRND Status 30/Nov/2017.pdf
RoHs Status
ROHS3 Compliant
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In stock: 5483

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Specifications

S4M M6G Tech Specifications
Taiwan Semiconductor Corporation - S4M M6G technical specifications, attributes, parameters and parts with similar specifications to Taiwan Semiconductor Corporation - S4M M6G

Product Attribute Attribute Value
Manufacturer Taiwan Semiconductor
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 4 A
Voltage - DC Reverse (Vr) (Max) 1000 V
Technology Standard
Supplier Device Package DO-214AB (SMC)
Speed Standard Recovery >500ns, > 200mA (Io)
Series -
Reverse Recovery Time (trr) 1.5 µs
Product Attribute Attribute Value
Package / Case DO-214AB, SMC
Package Tape & Reel (TR)
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Surface Mount
Current - Reverse Leakage @ Vr 100 µA @ 1000 V
Current - Average Rectified (Io) 4A
Capacitance @ Vr, F 60pF @ 4V, 1MHz
Base Product Number S4M

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

What are the key performance trade-offs when selecting the S4M M6G for high-frequency rectification applications?
The S4M M6G features a reverse recovery time (trr) of 1.5 µs, which is typical for standard recovery diodes and may introduce switching losses in high-frequency circuits. While its forward voltage drop (1.15 V @ 4 A) supports efficient conduction, this parameter, combined with trr, indicates that the diode is optimized more for cost-effective bulk power conversion than for fast-switching applications. Designers must weigh its 4 A continuous current capability against potential efficiency degradation above 20 kHz due to recovery charge dissipation. For such environments, alternative diodes with <300 ns trr might be preferable despite higher cost.
How does the S4M M6G compare to other diodes in terms of leakage current and thermal stability under sustained load?
With a maximum reverse leakage current of 100 µA at 1000 V, the S4M M6G exhibits moderate leakage for high-voltage operation, which can contribute to standby power loss in series configurations or floating topologies. Compared to ultra-fast Schottky variants, it lacks the near-zero leakage advantage, but its silicon PN junction design offers better thermal stability up to 150°C junction temperature. This makes it suitable for industrial-grade converters where reliability under thermal stress outweighs minimal leakage concerns.
Can the S4M M6G be used in bridge rectifier configurations without derating under continuous 4 A loads?
Yes, the S4M M6G is rated for 4 A average rectified current, making it suitable for full-wave bridge applications assuming adequate heatsinking and airflow. However, in bridge configurations, each diode conducts only half the AC cycle, so peak surge handling becomes critical. Thermal modeling should account for ambient temperatures above 70°C, as the package’s DO-214AB footprint has limited surface area for heat dissipation. Derating below 3.5 A may be prudent in confined enclosures or sealed systems.
What is the significance of the 60 pF junction capacitance in the S4M M6G for switching noise suppression?
The junction capacitance of 60 pF at 4 V and 1 MHz indicates relatively low capacitive coupling in reverse bias, which reduces high-frequency signal feedthrough in clamping circuits. While not as low as specialized RF diodes, this value supports basic filtering in DC-DC converter output stages where EMI mitigation is secondary to bulk rectification. It also implies that the diode will not significantly interact with fast-edge signals unless operating in avalanche mode near breakdown voltage.
Are there any known substitutes for the S4M M6G that offer improved reverse recovery characteristics?
Substitutes like STTH310S and SMLJ60S10-TP exist, but they differ in topology—STTH310S is a dual-diode configuration with lower trr (~35 ns), while the others are transient voltage suppressors rather than rectifiers. The S8MC-13 offers similar specs but with faster recovery (typically <500 ns). However, these alternatives may require layout changes due to different pinouts or package styles. The S4M M6G remains viable for applications where speed is not paramount and cost is a factor.
How does the operating temperature range of the S4M M6G influence long-term reliability in automotive environments?
Rated from -55°C to 150°C, the S4M M6G meets AEC-Q101 qualification thresholds for automotive use, provided it is mounted on a thermally conductive PCB layer. In practice, continuous operation above 125°C accelerates degradation of the PN junction, increasing leakage current over time. Automotive designs using this diode must ensure junction temperatures stay below 125°C even during cold-start conditions to maintain 100 µA or lower leakage at 1000 V.
What design considerations apply when integrating the S4M M6G into a 1 kV DC bus with multiple parallel diodes?
Parallel operation requires careful balancing due to slight variations in forward voltage across devices. The S4M M6G’s 1.15 V max Vf means that small mismatches can lead to current sharing imbalances under load. Each unit should be placed close to its counterpart on the same heatsink plane, and layout symmetry helps minimize parasitic inductance differences. Without active current balancing, total capacity may reach 12 A, but reliability could degrade if one device carries excess load due to thermal runaway.
Is the S4M M6G suitable for flyback transformer secondary-side rectification in isolated power supplies?
It can be used in such roles if switching frequencies remain below 100 kHz, where trr-induced losses are acceptable. However, in resonant or quasi-resonant topologies aiming for soft switching, the 1.5 µs recovery time may cause voltage spikes and EMI issues. Additionally, the DO-214AB package provides limited creepage distance; spacing between primary and secondary traces must comply with safety standards like IEC 60950-1 or equivalent, especially given the 1000 V Vr rating.
How does the Moisture Sensitivity Level (MSL) of 1 affect manufacturing handling of the S4M M6G?
Classified as MSL 1, the S4M M6G is considered moisture-resistant and can withstand unlimited storage life without baking prior to soldering. This simplifies supply chain logistics and enables just-in-time assembly in cleanroom environments. Manufacturers do not need to implement special packaging or pre-drying protocols, reducing production overhead and risk of popcorning during reflow.
What impact does the 1000 V reverse voltage rating have on circuit protection strategies involving the S4M M6G?
The high Vr allows the S4M M6G to operate safely in unregulated or poorly filtered DC rails where transients approach 900 V. However, since it is not designed as a surge suppressor, external TVS diodes should still be used in sensitive circuits to clamp inductive kickback or lightning-like events. The diode’s leakage current increases slightly with temperature, so in precision analog front-ends, isolation via optocouplers or transformers may be preferred over direct high-voltage sensing.
How does the S4M M6G perform compared to newer SiC-based rectifiers in terms of efficiency at light loads?
The S4M M6G is less efficient than silicon carbide (SiC) Schottky diodes at light loads due to its PN junction behavior and fixed 1.15 V forward drop. SiC devices exhibit near-zero reverse leakage and sub-0.7 V forward voltage, enabling >90% efficiency even at 10% load. For battery-powered or energy-harvesting systems, this difference is significant. However, the S4M M6G remains advantageous where system cost must be minimized and moderate switching speeds suffice.
What are the limitations of using the S4M M6G in synchronous rectification topologies?
Synchronous rectification relies on controlled turn-on timing to minimize conduction overlap and losses. The S4M M6G’s passive switching nature prevents active gate drive, making it incompatible with MOSFET-based synchronous designs. Attempting to substitute it directly would result in uncontrolled body diode conduction, defeating the purpose of synchronicity. It may only serve as a backup freewheeling path, not the primary rectifier in such architectures.
How does the package size (DO-214AB/SMC) affect thermal performance in compact PCB layouts with the S4M M6G?
The DO-214AB footprint has a nominal surface area of approximately 6 mm², limiting exposed metal for convection cooling. While it supports hand-soldered assembly, high-power density designs require mounting adjacent to copper planes or thermal vias. Thermal resistance from junction to ambient exceeds 60°C/W, meaning a 4 A continuous draw could raise case temperature by 240°C above ambient without heatsinking—a clear indication of reliance on forced airflow or conduction paths.
What precautions should be taken when replacing the S4M M6G in legacy industrial equipment?
When substituting, verify that the replacement maintains identical polarity, package compatibility, and electrical margins. The S4M M6G’s trr of 1.5 µs may mask underlying timing issues in older motor drives or welding controls; replacing it with a faster diode could expose previously hidden resonance problems. Also confirm RoHS compliance aligns with local regulations, as some jurisdictions restrict lead-based solders in service repairs.
How does the absence of a base product number series designation affect procurement and obsolescence planning for the S4M M6G?
The "Base Product Number: S4M" suggests part of a family, yet no explicit series code limits interchangeability. This ambiguity complicates cross-referencing during BOM audits. Procurement teams must validate pinout and electrical equivalence across suppliers, as minor revisions might alter parameters like Vf or trr without formal notice. Establishing a formal cross-reference database mitigates obsolescence risk when sourcing from alternate distributors.

Parts with Similar Specifications

The three parts on the right have similar specifications to Taiwan Semiconductor Corporation S4M M6G

Product Attribute S4M R6G S4M M6 S4M V6G S4M R6
Part Number S4M R6G S4M M6 S4M V6G S4M R6
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation TSC (Taiwan Semiconductor) Taiwan Semiconductor Corporation
Capacitance @ Vr, F - - - -
Voltage - Forward (Vf) (Max) @ If - - - -
Voltage - DC Reverse (Vr) (Max) - - - -
Reverse Recovery Time (trr) - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Speed - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Current - Reverse Leakage @ Vr - - - -
Series - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Operating Temperature - Junction - - - -
Current - Average Rectified (Io) - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
Technology - - - -
Mounting Type - Surface Mount Through Hole Surface Mount

S4M M6G Datasheet PDF

Download S4M M6G pdf datasheets and Taiwan Semiconductor Corporation documentation for S4M M6G - Taiwan Semiconductor Corporation.

Datasheets
S4A - S4M.pdf
PCN Packaging
Mult Dev Pkg/Status Chgs 5/Feb/2021.pdf
PCN Part Status Change
Mult Dev NRND Status 30/Nov/2017.pdf

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Customer Reviews

Evaluation: 10 Articles

  • Nord***mbedded
    Jul 20, 2026

    Reliable FPGA with predictable behavior. Configuration and testing went smoothly, making development faster than expected.

  • Arch***ct
    Jul 15, 2026

    Used this device in a communication signal processing board. Stable timing and no unexpected issues during implementation.

  • FPGA***lorer88
    Jul 7, 2026

    The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.

  • Nath***oleman
    Jun 29, 2026

    Used this sensor component in an industrial automation setup. Detection accuracy was consistent and installation was straightforward.

  • Emil***rperTech
    Jun 23, 2026

    Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.

  • Liam***terTech
    Jun 15, 2026

    Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

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S4M M6G Image

S4M M6G

Taiwan Semiconductor Corporation
98D-S4M M6G

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