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HomeProductsInductors, Coils, ChokesFixed InductorsNRS8030T6R8MJGJV
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NRS8030T6R8MJGJV - Taiyo Yuden

Manufacturer Part Number
NRS8030T6R8MJGJV
Manufacturer
Taiyo Yuden
Allelco Part Number
32D-NRS8030T6R8MJGJV
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
102,920 pcs available, New & Original
Parts Description
FIXED IND 6.8UH 3A 37.7 MOHM SMD
Package
Nonstandard
Data sheet
NRS8030T6R8MJGJ.pdf

PCN Part Status Change

Mult Devs NRND 01/Apr/2023.pdf
RoHs Status
ROHS3 Compliant
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Our certification
In stock: 102920

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Specifications

NRS8030T6R8MJGJV Tech Specifications
Taiyo Yuden - NRS8030T6R8MJGJV technical specifications, attributes, parameters and parts with similar specifications to Taiyo Yuden - NRS8030T6R8MJGJV

Product Attribute Attribute Value
Manufacturer Taiyo Yuden
Type Drum Core, Wirewound
Tolerance ±20%
Supplier Device Package -
Size / Dimension 0.315" L x 0.315" W (8.00mm x 8.00mm)
Shielding Shielded
Series NR, S Type
Ratings AEC-Q200
Q @ Freq -
Package / Case Nonstandard
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -40°C ~ 125°C
Mounting Type Surface Mount
Material - Core Ferrite
Inductance Frequency - Test 100 kHz
Inductance 6.8 µH
Height - Seated (Max) 0.118" (3.00mm)
Frequency - Self Resonant 32MHz
DC Resistance (DCR) 37.7mOhm Max
Current Rating (Amps) 3 A
Current - Saturation (Isat) 3A

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8504.50.8000

Frequently Asked Questions(FAQ)

What makes the NRS8030T6R8MJGJV drum core inductor suitable for automotive-grade power delivery applications compared to standard ferrite inductors?
The NRS8030T6R8MJGJV carries AEC-Q200 certification, which qualifies it for automotive reliability standards requiring extended temperature cycling and thermal stress validation. The shielded drum core design minimizes magnetic coupling to adjacent PCB traces, critical in densely routed automotive power stages. With a 37.7mOhm maximum DC resistance and 3A saturation current, the NRS8030T6R8MJGJV delivers low resistive losses in buck converter output stages operating near rated current, where thermal management becomes a design constraint in under-hood environments.
How does the 32MHz self-resonant frequency of the NRS8030T6R8MJGJV affect its performance in switching frequency noise filtering above 10MHz?
The NRS8030T6R8MJGJV exhibits parasitic capacitance-induced self-resonance at 32MHz, meaning inductive behavior transitions to capacitive above this frequency. In applications using 15MHz to 25MHz switching frequencies, the NRS8030T6R8MJGJV remains substantially inductive but begins exhibiting reduced impedance slope. For EMI filtering above the SRF, parallel capacitors become ineffective with the NRS8030T6R8MJGJV; designers must rely on series LC filtering or component placement isolation. Below 10MHz, the NRS8030T6R8MJGJV maintains predictable inductive response with minimal self-resonance interaction.
What thermal and current margin considerations apply when selecting the NRS8030T6R8MJGJV for continuous 2.8A to 3A DC-DC converter output stages?
The NRS8030T6R8MJGJV is rated for 3A saturation current and exhibits 37.7mOhm DCR, generating approximately 339mW resistive heating at 3A continuous operation. Operating near saturation (typically 85% to 95% rated current in production designs) reduces inductance margin and increases core loss. The NRS8030T6R8MJGJV operates across -40°C to 125°C, so a 2.8A design point at +85°C ambient provides approximately 0.4A derating headroom before saturation effects. Moisture sensitivity level MSL 1 eliminates shelf-life constraints, but the compact 8.00mm x 3.00mm form factor creates thermal concentration; PCB copper area beneath the NRS8030T6R8MJGJV should minimize thermal resistance to chassis ground.
How does the ±20% inductance tolerance of the NRS8030T6R8MJGJV impact ripple current and loop stability in switching regulators?
The NRS8030T6R8MJGJV's ±20% tolerance produces a 5.44µH to 8.16µH inductance band across population samples. In a buck converter, output ripple current scales inversely with inductance: a -20% part yields 25% higher ripple current compared to nominal. Loop bandwidth and phase margin are inductance-dependent; the NRS8030T6R8MJGJV's tolerance band can shift crossover frequency by ±8% to 10%, requiring feedback compensation networks with ±2dB gain margin guardband. Production volume designs often parallel two NRS8030T6R8MJGJV inductors or apply post-soldering inductance binning to maintain ±10% effective tolerance.
Why is the shielded construction of the NRS8030T6R8MJGJV preferred over unshielded inductors in mixed-signal PCB layouts?
The NRS8030T6R8MJGJV's shielded drum core confines magnetic flux within the core material, reducing radiated coupling to sensitive analog circuits by 15dB to 25dB compared to open-core geometries. Unshielded inductors produce dipole magnetic fields extending 2x to 3x their physical dimension, inducing noise into nearby op-amp inputs or RF components. The NRS8030T6R8MJGJV's ferrite shielding also reduces susceptibility to external magnetic fields, improving loop inductance stability when placed near switching FETs or transformer sources. In 4-layer PCBs with limited routing channels, the NRS8030T6R8MJGJV enables co-location of digital and analog power stages without guard trace complexity.
What is the effective inductance range of the NRS8030T6R8MJGJV at 100kHz test frequency versus higher switching frequencies used in modern converters?
The NRS8030T6R8MJGJV's published 6.8µH specification is measured at 100kHz per datasheet convention. Ferrite drum core inductors exhibit frequency-dependent permeability; inductance typically decreases 8% to 12% between 100kHz and 1MHz due to core loss mechanisms. At 2MHz switching frequency (common in 48V to 12V converters), the NRS8030T6R8MJGJV's effective inductance may reduce to approximately 6.0µH to 6.2µH. Designers must account for this reduction when calculating ripple current and resonant frequencies; assuming nominal 6.8µH at 2MHz switching rates introduces 8% to 10% ripple current underestimation. Frequency-specific inductance curves are rarely provided for the NRS8030T6R8MJGJV; empirical measurement or SPICE model curves from the manufacturer remain necessary for precision applications.
How does the NRS8030T6R8MJGJV compare to competing 6.8µH inductors with higher current ratings in terms of footprint efficiency and cost trade-offs?
Higher-current alternatives (4.5A to 5A rated) typically employ larger drum cores or thicker wire gauges, increasing footprint to 10mm x 10mm or 12mm x 8mm. The NRS8030T6R8MJGJV maintains 8mm x 8mm footprint at 3A, delivering superior PCB area efficiency for compact 24V or 12V rails where the 3A limit is sufficient. Higher-current inductors also present higher DCR (45mOhm to 55mOhm), offsetting efficiency gains. The NRS8030T6R8MJGJV's 37.7mOhm represents a favorable DCR-to-footprint ratio; applications requiring > 3.2A often justify the larger footprint for reduced temperature rise rather than accepting higher resistive losses from oversized components.
What assembly and rework considerations apply to the NRS8030T6R8MJGJV in production versus lab prototyping environments?
The NRS8030T6R8MJGJV arrives in Tape & Reel packaging with MSL 1 rating, eliminating moisture bake-out procedures before reflow. The 8mm x 3mm height provides reliable pick-and-place machine centering and placement repeatability. Rework of the NRS8030T6R8MJGJV requires controlled heating to 260°C peak to avoid core demagnetization and solder bridging to adjacent passives in 0.4mm pitch layouts. The shielded drum core construction makes manual inspection of solder joint quality difficult under the component; X-ray or cross-section analysis may be required for defect analysis. Unlike ceramic capacitors, the NRS8030T6R8MJGJV exhibits no mechanical stress sensitivity; thermal cycling from reflow does not degrade performance.
Can the NRS8030T6R8MJGJV be paralleled effectively to reduce DC resistance and increase current handling in existing designs?
Paralleling two NRS8030T6R8MJGJV units nominally reduces inductance to 3.4µH and DCR to approximately 18.85mOhm, but coupling and tolerance distribution create practical limitations. Ferrite drum cores exhibit moderate mutual coupling (k ≈ 0.05 to 0.08); actual parallel inductance reaches 3.6µH to 3.8µH rather than ideal 3.4µH. The ±20% tolerance on each NRS8030T6R8MJGJV results in ±10% spread on the parallel inductance pair. Current divides inversely with DCR; the NRS8030T6R8MJGJV with lower DCR (from tolerance spread) carries disproportionately higher current, potentially saturating early. Effective paralleling requires matched inductance pairs binned within ±5%, increasing assembly cost. For true 5A+ applications, single larger inductors are more reliable than parallel NRS8030T6R8MJGJV configurations.
How does thermal derating of the NRS8030T6R8MJGJV apply in 125°C ambient designs, and what inductance loss occurs?
The NRS8030T6R8MJGJV's temperature range extends to 125°C, but ferrite permeability decreases approximately 0.15% to 0.25% per °C above room temperature. At 125°C ambient plus 60°C self-heating from 3A continuous current, the junction temperature reaches 185°C; this produces approximately 5% to 8% inductance reduction compared to 25°C measurement. The NRS8030T6R8MJGJV's DCR also increases ~0.4% per °C due to copper resistance temperature coefficient, adding approximately 15% to 18% additional resistive loss at +125°C compared to +25°C. Cumulative derating means the NRS8030T6R8MJGJV at full temperature excursion behaves as approximately 6.3µH with 44mOhm DCR. Design margins for ripple current and efficiency calculations must allocate this derating; assuming room-temperature parameters at high-temperature operating points introduces 5% to 8% prediction error in inductor performance.
What EMI and coupling considerations should guide PCB routing of the current path through the NRS8030T6R8MJGJV in high-speed digital systems?
The NRS8030T6R8MJGJV's shielding reduces external magnetic field radiation, but current loop geometry still dominates EMI performance. High-frequency switching current through the NRS8030T6R8MJGJV must follow low-inductance paths: the source path (from FET to inductor input), through the NRS8030T6R8MJGJV, and return to ground through the load. Loop area between input and output current paths should be minimized to <10mm² in compact layouts. The NRS8030T6R8MJGJV should be placed within 5mm of the switching FET to reduce parasitic loop inductance; greater distances inject common-mode noise onto the power rail. Multi-layer stackup with ground planes adjacent to the NRS8030T6R8MJGJV layer reduces coupling to signal layers. Inadequate current path design can negate the NRS8030T6R8MJGJV's shielding benefits, producing radiated emissions exceeding FCC/CE limits despite on-component shielding.
How do saturation characteristics of the NRS8030T6R8MJGJV affect behavior during converter startup or transient load steps?
The NRS8030T6R8MJGJV exhibits soft saturation with the ferrite core; inductance decreases gradually as current approaches 3A rather than abruptly collapsing. At 2.5A, inductance remains approximately 95% of nominal; at 3A, inductance drops to 70% to 75% of nominal value. During startup transients where converter output voltage overshoots or inrush current momentarily exceeds steady-state limits, the NRS8030T6R8MJGJV's reducing inductance increases current slew rate, potentially exceeding FET current ratings or triggering protection circuits. Soft-start resistors or current-limiting circuits should limit peak startup current to <3.5A to prevent excessive inductance collapse. The NRS8030T6R8MJGJV's saturation behavior is load-dependent; rapid transients (microsecond-scale) may produce higher peak currents than steady-state analysis predicts, requiring transient simulation or empirical measurement to validate safe operation margins.

Parts with Similar Specifications

The three parts on the right have similar specifications to Taiyo Yuden NRS8030T6R8MJGJV

Product Attribute NRS8030T6R8MJGJ NRS8030T3R3MJGJV NRS8030T4R7MJGJV NRS8030T4R7MJGJ
Part Number NRS8030T6R8MJGJ NRS8030T3R3MJGJV NRS8030T4R7MJGJV NRS8030T4R7MJGJ
Manufacturer Taiyo Yuden Taiyo Yuden Taiyo Yuden Taiyo Yuden
Frequency - Self Resonant - - - -
Current Rating (Amps) - - - -
Tolerance - - - -
Q @ Freq - - - -
Size / Dimension - - - -
Series - - - -
Shielding - - - -
Inductance Frequency - Test - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Type - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Mounting Type - Surface Mount Through Hole Surface Mount
Height - Seated (Max) - - - -
Ratings - - - -
DC Resistance (DCR) - - - -
Material - Core - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Inductance - - - -
Current - Saturation (Isat) - - - -

NRS8030T6R8MJGJV Datasheet PDF

Download NRS8030T6R8MJGJV pdf datasheets and Taiyo Yuden documentation for NRS8030T6R8MJGJV - Taiyo Yuden.

Datasheets
NR(H,S,V) Series Catalog.pdf NRS8030T6R8MJGJV Spec Sheet.pdf
PCN Part Status Change
Mult Devs NRND 01/Apr/2023.pdf
PCN Part Number
Mult Devs Part Number 23/Sep/2022.pdf
HTML Datasheet
NR(H,S,V) Series Catalog.pdf

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NRS8030T6R8MJGJV

Taiyo Yuden
32D-NRS8030T6R8MJGJV

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