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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - Single1N5393GPHE3/73
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1N5393GPHE3/73 - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number
1N5393GPHE3/73
Manufacturer
Vishay General Semiconductor – Diodes Division
Allelco Part Number
98D-1N5393GPHE3/73
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
4,022 pcs available, New & Original
Parts Description
DIODE GEN PURP 200V 1.5A DO204AC
Package
DO-204AC (DO-15)
Data sheet
1N5393GPHE3/73.pdf
RoHs Status
ROHS3 Compliant
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Specifications

1N5393GPHE3/73 Tech Specifications
Vishay General Semiconductor - Diodes Division - 1N5393GPHE3/73 technical specifications, attributes, parameters and parts with similar specifications to Vishay General Semiconductor - Diodes Division - 1N5393GPHE3/73

Product Attribute Attribute Value
Manufacturer Vishay General Semiconductor – Diodes Division
Voltage - Forward (Vf) (Max) @ If 1.4 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max) 200 V
Technology Standard
Supplier Device Package DO-204AC (DO-15)
Speed Standard Recovery >500ns, > 200mA (Io)
Series SUPERECTIFIER®
Reverse Recovery Time (trr) 2 µs
Product Attribute Attribute Value
Package / Case DO-204AC, DO-15, Axial
Package Tape & Box (TB)
Operating Temperature - Junction -65°C ~ 175°C
Mounting Type Through Hole
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Current - Average Rectified (Io) 1.5A
Capacitance @ Vr, F 15pF @ 4V, 1MHz
Base Product Number 1N5393

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

What are the key design considerations when selecting the 1N5393GPHE3/73 for a 200V rectification stage in a power supply?
The 1N5393GPHE3/73 offers a 200V reverse voltage rating and 1.5A average rectified current, making it suitable for low-to-mid power AC-DC conversion. Its forward voltage drop of 1.4V at 1.5A results in approximately 2.1W conduction loss under full load, which must be factored into thermal design. With a standard recovery time of 2 µs and reverse leakage of 5 µA at 200V, it performs adequately in non-high-frequency applications such as linear supplies or offline rectifiers where switching noise is less critical than cost and simplicity.
How does the reverse recovery behavior of the 1N5393GPHE3/73 compare to ultrafast diodes like the STTH1R02Q in bridge rectifier configurations?
The 1N5393GPHE3/73 has a reverse recovery time of 2 µs, significantly slower than the STTH1R02Q’s typical 35 ns. In a bridge rectifier operating above 10 kHz, this delay increases switching losses and can cause voltage spikes due to reverse current overshoot. For 50/60 Hz mains rectification, the 1N5393GPHE3/73 remains viable, but in switch-mode power supplies or high-frequency inverters, the STTH1R02Q’s faster recovery reduces EMI and improves efficiency.
Can the 1N5393GPHE3/73 be used in parallel for higher current applications, and what derating is necessary?
While technically possible, paralleling the 1N5393GPHE3/73 requires careful current sharing due to its positive temperature coefficient in forward conduction. Without ballast resistors or matched Vf units, thermal runaway risk increases. A practical limit is two diodes with 0.25Ω series resistors per branch and shared heatsinking. Even then, total current should not exceed 2.5A combined to maintain junction temperatures below 150°C under worst-case ambient conditions.
What thermal management strategy is recommended for the 1N5393GPHE3/73 in an enclosed industrial enclosure with 50°C ambient temperature?
The 1N5393GPHE3/73 has a thermal resistance of approximately 50°C/W junction-to-ambient in free air. At 1.5A and 1.4V drop, power dissipation is 2.1W, leading to a junction temperature rise of ~105°C above ambient. In a 50°C environment, this reaches 155°C—within the 175°C limit but leaving minimal margin. Adding a small clip-on heatsink or increasing airflow reduces RθJA significantly and improves long-term reliability.
How does the capacitance of the 1N5393GPHE3/73 at 4V, 1MHz (15pF) affect performance in high-impedance signal clamping applications?
The 15pF junction capacitance at 4V reverse bias introduces minimal loading in low-frequency signal paths but becomes relevant above 1 MHz. In precision analog clamping or high-speed digital interfaces, this capacitance can form unintended low-pass filters with source impedance. For example, with a 1kΩ source, the -3dB point is around 10.6 MHz. In such cases, lower-capacitance alternatives may be preferable despite the 1N5393GPHE3/73’s robust voltage handling.
Is the 1N5393GPHE3/73 suitable for automotive 12V battery reverse polarity protection, and what failure modes should be anticipated?
The 1N5393GPHE3/73 can protect 12V systems against reverse connection due to its 200V rating, but its 1.4V forward drop results in 2.1W loss at 1.5A—problematic in thermally constrained under-hood environments. Additionally, standard recovery diodes like the 1N5393GPHE3/73 may exhibit higher transient voltage overshoot during inductive load disconnection compared to TVS-based solutions. For sustained reliability, ensure the diode is mounted on a chassis-grounded heatsink and consider surge testing per ISO 7637-2.
How does the leakage current of the 1N5393GPHE3/73 (5 µA @ 200V) impact efficiency in high-voltage standby circuits?
At 5 µA reverse leakage under full 200V bias, the 1N5393GPHE3/73 dissipates only 1 mW in blocking mode—negligible in most rectifier roles. However, in precision high-voltage dividers or battery-powered monitoring circuits where nanoampere-level quiescent current matters, even this small leakage can accumulate over time. For such applications, diodes with sub-microamp leakage or active MOSFET-based blocking may be more appropriate despite added complexity.
What layout practices are critical when mounting the 1N5393GPHE3/73 in a DO-204AC package on a high-voltage PCB?
The axial DO-204AC package of the 1N5393GPHE3/73 requires adequate creepage distance—minimum 3 mm between leads at 200V DC in pollution degree 2 environments. Avoid sharp bends near the body to prevent mechanical stress on the glass seal. Thermal vias under the cathode lead (if using a pad extension) improve heat transfer, but ensure solder wicking does not compromise lead integrity. Keep high dv/dt nodes away from sensitive analog traces to minimize capacitive coupling.
How does the 1N5393GPHE3/73 compare to the BYW52-TAP in terms of surge current handling and long-term reliability?
Both the 1N5393GPHE3/73 and BYW52-TAP are standard recovery diodes rated for 200V and ~1.5A, but the BYW52-TAP typically specifies higher non-repetitive surge current (e.g., 40A vs. ~30A for the 1N5393GPHE3/73). This makes the BYW52-TAP slightly more robust in fault conditions like transformer inrush or short-circuit events. However, the 1N5393GPHE3/73’s wider operating temperature range (-65°C to 175°C) offers better cold-start performance in extreme environments.
Can the 1N5393GPHE3/73 be used in a center-tapped full-wave rectifier for a 120V AC input, and what peak inverse voltage (PIV) margin exists?
In a center-tapped configuration with 120V RMS input, the peak secondary voltage is approximately 170V, resulting in a PIV of ~340V across each diode. The 1N5393GPHE3/73’s 200V rating is insufficient for this topology—it would be overstressed by nearly 70%. This diode is better suited for bridge rectifiers on 120V systems (PIV ≈ 170V) or half-wave applications where voltage doubling does not occur.
What derating guidelines apply to the 1N5393GPHE3/73 when operating continuously near its 1.5A average current rating?
Continuous operation at 1.5A demands strict thermal control. Derate current by 10–15% per 25°C above 25°C ambient to maintain Tj below 150°C. For example, at 75°C ambient, limit average current to ~1.2A unless supplemental cooling is provided. Pulse operation allows higher peak currents, but duty cycle and thermal time constants must be modeled to avoid cumulative heating.
How does the standard recovery characteristic of the 1N5393GPHE3/73 influence EMI performance in offline power supplies?
The 2 µs reverse recovery time generates high di/dt during turn-off, producing broadband noise in the 1–30 MHz range. While acceptable for non-compliance-critical applications like basic battery chargers, this can challenge conducted EMI limits in FCC/CE-certified designs. Snubber networks (e.g., 100Ω + 10nF) across the diode help dampen ringing, but switching frequency should remain below 20 kHz to minimize cumulative losses.
Is the 1N5393GPHE3/73 appropriate for use in a solar microinverter’s DC link rectification stage?
The 1N5393GPHE3/73’s 200V rating aligns with typical 150–180V DC bus voltages in microinverters, but its standard recovery behavior increases switching losses at typical 20–50 kHz frequencies. Combined with 1.4V forward drop, efficiency suffers compared to SiC or ultrafast alternatives. However, for low-cost, low-power (<300W) designs where efficiency targets are relaxed, the 1N5393GPHE3/73 offers a cost-effective, robust solution with proven field reliability.
What failure mechanisms are most common in field returns of the 1N5393GPHE3/73, and how can they be mitigated during design?
Common failure modes include thermal runaway from inadequate heatsinking, voltage transients exceeding 200V (e.g., inductive kick), and mechanical fracture due to poor lead forming. Mitigation includes using TVS diodes for transient suppression, ensuring minimum 2.5 mm lead bend radius, and validating thermal performance under worst-case load and ambient conditions. Field data shows improved MTBF when junction temperature is maintained below 125°C.
How does the moisture sensitivity level (MSL 1) of the 1N5393GPHE3/73 affect storage and assembly processes?
Rated MSL 1 (unlimited floor life), the 1N5393GPHE3/73 requires no dry packing or bake-out before reflow, simplifying logistics for high-volume production. This is advantageous in environments without controlled humidity, though standard ESD precautions still apply due to the glass-metal seal construction. No special handling is needed beyond typical through-hole component protocols.

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay General Semiconductor - Diodes Division 1N5393GPHE3/73

Product Attribute 1N5393GP-E3/73 1N5393GPHE3/54 1N5393GP-E3/54 1N5393GP-TP
Part Number 1N5393GP-E3/73 1N5393GPHE3/54 1N5393GP-E3/54 1N5393GP-TP
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Micro Commercial Co
Voltage - Forward (Vf) (Max) @ If - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Voltage - DC Reverse (Vr) (Max) - - - -
Current - Reverse Leakage @ Vr - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Technology - - - -
Reverse Recovery Time (trr) - - - -
Current - Average Rectified (Io) - - - -
Operating Temperature - Junction - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Speed - - - -
Capacitance @ Vr, F - - - -
Series - - - -

1N5393GPHE3/73 Datasheet PDF

Download 1N5393GPHE3/73 pdf datasheets and Vishay General Semiconductor - Diodes Division documentation for 1N5393GPHE3/73 - Vishay General Semiconductor - Diodes Division.

Datasheets
1N5391GP thru 1N5399GP.pdf

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1N5393GPHE3/73 Image

1N5393GPHE3/73

Vishay General Semiconductor - Diodes Division
98D-1N5393GPHE3/73

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