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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - SingleU1B-E3/61T
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U1B-E3/61T - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number
U1B-E3/61T
Manufacturer
Vishay General Semiconductor – Diodes Division
Allelco Part Number
32D-U1B-E3/61T
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
320,850 pcs available, New & Original
Parts Description
DIODE GEN PURP 100V 1A DO214AC
Package
DO-214AC (SMA)
Data sheet
U1B-E3/61T.pdf

Datasheets

U1B, U1C & U1D.pdf

Other Related Documents

Packaging Information.pdf

PCN Assembly/Origin

Multiple Parts 21/Jun/2022.pdf
RoHs Status
ROHS3 Compliant
Our certification
In stock: 320850
  • Unit Price: $0.125
  • Subtotal: $0.00

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Add to Cart and Submit RFQ now, we'll contact you immediately.

Quantity Unit Price Ext. Price
1+ $0.125 $0.13
200+ $0.05 $10.00
500+ $0.048 $24.00
1000+ $0.048 $48.00
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

U1B-E3/61T Tech Specifications
Vishay General Semiconductor - Diodes Division - U1B-E3/61T technical specifications, attributes, parameters and parts with similar specifications to Vishay General Semiconductor - Diodes Division - U1B-E3/61T

Product Attribute Attribute Value
Manufacturer Vishay General Semiconductor – Diodes Division
Voltage - Forward (Vf) (Max) @ If 920 mV @ 1 A
Voltage - DC Reverse (Vr) (Max) 100 V
Technology Standard
Supplier Device Package DO-214AC (SMA)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series -
Reverse Recovery Time (trr) 24 ns
Product Attribute Attribute Value
Package / Case DO-214AC, SMA
Package Tape & Reel (TR)
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Surface Mount
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Current - Average Rectified (Io) 1A
Capacitance @ Vr, F -
Base Product Number U1B

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

What is the reverse recovery time of the U1B-E3/61T diode and how does this parameter affect high-frequency switching performance in power supply designs?
The U1B-E3/61T exhibits a reverse recovery time (trr) of 24 nanoseconds, which enables efficient operation in fast-switching applications such as synchronous rectification or PWM converters operating above 500 kHz. This sub-25 ns trr allows reduced switching losses compared to standard rectifier diodes, contributing to improved overall efficiency in compact power conversion systems where thermal management is critical.
How does the forward voltage drop of the U1B-E3/61T compare to other diodes in its class, and what implications does this have for thermal design in continuous 1A load conditions?
At 1 ampere of forward current, the U1B-E3/61T has a maximum forward voltage drop of 920 mV. When conducting continuously at rated current, this results in approximately 0.92 watts of power dissipation per device. In a dual-diode configuration such as bridge rectifiers or OR-ing circuits, total loss can approach 1.84 watts, necessitating careful evaluation of package thermal resistance and PCB copper area to maintain junction temperatures within the -55°C to +150°C specification.
Can the U1B-E3/61T be used in automotive applications requiring AEC-Q101 qualification, and what are the key reliability considerations for mission-critical systems?
The U1B-E3/61T is not inherently qualified to AEC-Q101 standards, so it should not be selected for automotive applications without additional validation. For non-automotive industrial use, its Moisture Sensitivity Level (MSL) of 1 indicates unlimited floor life under normal storage conditions, supporting reliable surface-mount assembly in high-volume production environments.
What are the valid substitutes for the U1B-E3/61T, and how do their electrical characteristics differ when used in 100V input buck converter freewheeling paths?
Valid substitutes include ES1B-LTP, EGF1B, ES1BHE3_A/I, ES1B-E3/5AT, and ES1BHE3_A/H. These devices share similar reverse breakdown voltage (100V), average current rating (1A), and surface-mount packaging, but differences in trr and Vf may impact switching efficiency. For example, if a substitute has a higher forward voltage, conduction losses increase proportionally with current squared times resistance, affecting system-level thermal budgets.
Why might a designer choose two U1B-E3/61T diodes instead of one higher-current alternative in a redundant current-path application?
Using two U1B-E3/61T diodes in parallel provides inherent redundancy and improves fault tolerance by distributing thermal stress across both components. While sharing current requires careful matching due to positive temperature coefficient of Vf, this approach can extend mean time between failures in safety-critical or high-reliability systems where single-point failure must be avoided.
How does the junction-to-ambient thermal resistance compare between the U1B-E3/61T mounted on a standard 1 oz copper PCB versus a 2 oz copper pad with thermal vias?
The DO-214AC package has a typical θJA of approximately 120°C/W without enhanced cooling. On a 1 oz copper plane, actual thermal performance is often worse due to limited heat spreading. With a 2 oz copper area and multiple thermal vias connecting to an internal ground plane, effective θJA can be reduced by 30–40%, lowering peak junction temperature during sustained 1A operation by up to 18°C—critical for maintaining long-term reliability near the 150°C limit.
What precautions should be taken when replacing the U1B-E3/61T with a different part number during BOM migration?
During substitution, verify that all absolute maximum ratings are met: Vr must remain below 100V, Io should not exceed 1A continuously, and ambient temperature plus power dissipation must keep junction temperature within -55°C to +150°C. Additionally, check that the replacement’s trr and Vf match closely to preserve switching waveform integrity and avoid unintended EMI or efficiency degradation in high-speed topologies.
How does the leakage current of the U1B-E3/61T behave under elevated junction temperatures, and what impact could this have in precision analog front-end protection circuits?
Although the datasheet specifies reverse leakage of 5 µA at 100V and 25°C, leakage typically increases exponentially with temperature. At 125°C junction temperature, leakage may rise to several tens of microamps, potentially affecting sensitive measurement paths in battery-backed systems or instrumentation amplifiers protected by clamping diodes. In such cases, lower-leakage alternatives or active guarding techniques may be preferable despite higher cost.
Is the U1B-E3/61T suitable for use in half-wave rectification stages, and what efficiency penalty would result compared to full-wave bridge configurations using two identical units?
Yes, the U1B-E3/61T can function in half-wave rectification, but conduction losses will double relative to a full-wave bridge using two U1B-E3/61T diodes because only one diode conducts during each half-cycle. Additionally, output ripple frequency halves, requiring larger filter capacitors, which increases size, cost, and transient response latency—factors that make bridge configurations more favorable in compact AC-DC designs.
What role does the DO-214AC package play in automated optical inspection (AOI) during high-speed SMT assembly?
The DO-214AC (SMA) package features symmetrical leads and a consistent footprint, enabling reliable detection by AOI systems during pick-and-place operations. Its flat profile minimizes tombstoning risk during reflow, supporting yield rates above 99% in mass production lines handling thousands of boards per hour—important for maintaining low defect density in cost-sensitive consumer electronics.

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay General Semiconductor - Diodes Division U1B-E3/61T

Product Attribute U1B-M3/61T U1B-E3/5AT U1B-M3/5AT PDU340-13
Part Number U1B-M3/61T U1B-E3/5AT U1B-M3/5AT PDU340-13
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Diodes Incorporated
Speed - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
Voltage - DC Reverse (Vr) (Max) - - - -
Current - Reverse Leakage @ Vr - - - -
Capacitance @ Vr, F - - - -
Current - Average Rectified (Io) - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Series - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Operating Temperature - Junction - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Technology - - - -
Voltage - Forward (Vf) (Max) @ If - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Reverse Recovery Time (trr) - - - -

U1B-E3/61T Datasheet PDF

Download U1B-E3/61T pdf datasheets and Vishay General Semiconductor - Diodes Division documentation for U1B-E3/61T - Vishay General Semiconductor - Diodes Division.

Datasheets
U1B, U1C & U1D.pdf
Other Related Documents
Packaging Information.pdf
PCN Assembly/Origin
Multiple Parts 21/Jun/2022.pdf

Customer Reviews

Evaluation: 10 Articles

  • Arch***ct
    Jul 15, 2026

    Used this device in a communication signal processing board. Stable timing and no unexpected issues during implementation.

  • FPGA***lorer88
    Jul 7, 2026

    The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.

  • Nath***oleman
    Jun 29, 2026

    Used this sensor component in an industrial automation setup. Detection accuracy was consistent and installation was straightforward.

  • Emil***rperTech
    Jun 23, 2026

    Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.

  • Liam***terTech
    Jun 15, 2026

    Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

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Delivery Time

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Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.
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U1B-E3/61T Image

U1B-E3/61T

Vishay General Semiconductor - Diodes Division
32D-U1B-E3/61T

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