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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - SingleUS1G-E3/61T
US1G-E3/61T Image
Image may be representation.
See specifications for product details.

US1G-E3/61T - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number
US1G-E3/61T
Manufacturer
Vishay General Semiconductor – Diodes Division
Allelco Part Number
32D-US1G-E3/61T
ECAD Model
Parts Description
DIODE GEN PURP 400V 1A DO214AC
Detailed Description
Package
DO-214AC, SMA
Data sheet
US1G-E3/61T.pdf
RoHs Status
ROHS3 Compliant
In stock: 261950

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Specifications

US1G-E3/61T Tech Specifications
Vishay General Semiconductor - Diodes Division - US1G-E3/61T technical specifications, attributes, parameters and parts with similar specifications to Vishay General Semiconductor - Diodes Division - US1G-E3/61T

Product Attribute Attribute Value  
Manufacturer Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A  
Voltage - DC Reverse (Vr) (Max) 400 V  
Technology Standard  
Supplier Device Package DO-214AC (SMA)  
Speed Fast Recovery =< 500ns, > 200mA (Io)  
Series -  
Reverse Recovery Time (trr) 50 ns  
Product Attribute Attribute Value  
Package / Case DO-214AC, SMA  
Package Tape & Reel (TR)  
Operating Temperature - Junction -55°C ~ 150°C  
Mounting Type Surface Mount  
Current - Reverse Leakage @ Vr 10 µA @ 400 V  
Current - Average Rectified (Io) 1A  
Capacitance @ Vr, F 15pF @ 4V, 1MHz  
Base Product Number US1  

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay General Semiconductor - Diodes Division US1G-E3/61T

Product Attribute US1G-E3/61T US1FFA US1D_R1_00001 US1G-E3/5AT
Part Number US1G-E3/61T US1FFA US1D_R1_00001 US1G-E3/5AT
Manufacturer Vishay General Semiconductor - Diodes Division onsemi Panjit International Inc. Vishay General Semiconductor - Diodes Division
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 10 µA @ 400 V 5 µA @ 300 V 1 µA @ 200 V 10 µA @ 400 V
Technology Standard Standard Standard Standard
Base Product Number US1 US1F US1D US1
Capacitance @ Vr, F 15pF @ 4V, 1MHz 20pF @ 4V, 1MHz 17pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Reverse Recovery Time (trr) 50 ns 50 ns 50 ns 50 ns
Voltage - DC Reverse (Vr) (Max) 400 V 300 V 200 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Series - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Supplier Device Package DO-214AC (SMA) SOD-123FA SMA (DO-214AC) DO-214AC (SMA)
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 950 mV @ 1 A 1 V @ 1 A 1 V @ 1 A
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
Package / Case DO-214AC, SMA SOD-123W DO-214AC, SMA DO-214AC, SMA

US1G-E3/61T Datasheet PDF

Download US1G-E3/61T pdf datasheets and Vishay General Semiconductor - Diodes Division documentation for US1G-E3/61T - Vishay General Semiconductor - Diodes Division.

Other Related Documents
Packaging Information.pdf
PCN Assembly/Origin
Multiple Parts 21/Jun/2022.pdf

Shipment

Delivery Time

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Delivery Cost

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Delivery Method

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Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.

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US1G-E3/61T Image

US1G-E3/61T

Vishay General Semiconductor - Diodes Division
32D-US1G-E3/61T

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