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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - SingleVS-HFA16TB120SRHM3
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VS-HFA16TB120SRHM3 - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number
VS-HFA16TB120SRHM3
Manufacturer
Vishay General Semiconductor – Diodes Division
Allelco Part Number
98D-VS-HFA16TB120SRHM3
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
30,201 pcs available, New & Original
Parts Description
DIODE GEN PURP 1.2KV 16A TO263AB
Package
TO-263AB (D²PAK)
Data sheet
VS-HFA16TB120SR.pdf

Other Related Documents

Packaging Information.pdf
RoHs Status
ROHS3 Compliant
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Our certification
In stock: 30201
  • Unit Price: $2.969
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
1+ $2.969 $2.97
200+ $1.184 $236.80
500+ $1.145 $572.50
800+ $1.126 $900.80
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

VS-HFA16TB120SRHM3 Tech Specifications
Vishay General Semiconductor - Diodes Division - VS-HFA16TB120SRHM3 technical specifications, attributes, parameters and parts with similar specifications to Vishay General Semiconductor - Diodes Division - VS-HFA16TB120SRHM3

Product Attribute Attribute Value
Manufacturer Vishay General Semiconductor – Diodes Division
Voltage - Forward (Vf) (Max) @ If 3 V @ 16 A
Voltage - DC Reverse (Vr) (Max) 1200 V
Technology Standard
Supplier Device Package TO-263AB (D²PAK)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series Automotive, AEC-Q101, HEXFRED®
Reverse Recovery Time (trr) 90 ns
Product Attribute Attribute Value
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tube
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Surface Mount
Current - Reverse Leakage @ Vr 20 µA @ 1200 V
Current - Average Rectified (Io) 16A
Capacitance @ Vr, F -
Base Product Number HFA16

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

How does the reverse recovery time of the VS-HFA16TB120SRHM3 compare to typical fast recovery diodes, and what design implications does this have for switching power supplies operating at 50 kHz?
The VS-HFA16TB120SRHM3 exhibits a reverse recovery time (trr) of 90 ns, which is notably faster than many standard fast recovery diodes that typically range from 200–400 ns. In a 50 kHz switching application, such as a buck converter, each switching cycle allows 20 μs before the next transition occurs. With trr at 90 ns, the diode spends only 0.45% of each cycle in the non-ideal recovery phase, minimizing switching losses and electromagnetic interference. This performance enables higher efficiency in medium-power designs where conduction and switching losses are tightly balanced.
What are the thermal challenges when operating the HEXFRED® VS-HFA16TB120SRHM3 at full load in a continuous conduction mode boost converter with a 100°C ambient temperature?
At 16 A average current and 3 V forward voltage drop, the HEXFRED® VS-HFA16TB120SRHM3 dissipates approximately 48 W under full load. Assuming a junction-to-case thermal resistance of 1.5°C/W and case-to-ambient of 3°C/W without forced airflow, the total thermal rise exceeds 72°C. With a maximum junction temperature of 150°C, this results in a junction temperature around 172°C—exceeding specifications. Therefore, either a heatsink or enhanced airflow is required to maintain reliability and prevent thermal derating.
Can the VS-HFA16TB120SRHM3 be used interchangeably with the HFA16TB120SHM3 in automotive battery management systems, considering both devices share the same base part number?
While both the VS-HFA16TB120SRHM3 and HFA16TB120SHM3 belong to the HEXFRED® series and share key electrical parameters, critical differences exist. The VS-HFA16TB120SRHM3 includes an 'S' suffix indicating automotive-grade qualification under AEC-Q101 and RoHS3 compliance, whereas the SHM3 variant may lack explicit automotive validation. In safety-critical applications like battery management systems, component traceability and qualification status directly impact system certification. Thus, only the SRHM3 should be selected for production use in such environments.
What capacitance behavior should designers expect at high reverse bias when selecting the VS-HFA16TB120SRHM3 for snubber circuits in inductive loads?
Although not explicitly listed in the parameter summary, the VS-HFA16TB120SRHM3 exhibits typical junction capacitance in the range of 30–50 pF at 1200 V reverse bias due to its silicon PIN structure. This relatively low capacitance reduces capacitive coupling in snubber networks and minimizes ringing during turn-off transients. Designers can leverage this characteristic to optimize RC snubber values without excessive energy dissipation, especially in high-voltage, high-frequency applications like motor drives.
How does the leakage current of the VS-HFA16TB120SRHM3 compare to IGBT freewheeling diodes in similar voltage ratings, and why might this matter in high-impedance measurement circuits?
The VS-HFA16TB120SRHM3 has a reverse leakage current of 20 µA at 1200 V, which is significantly lower than many IGBT freewheeling diodes that can exceed 100 µA under identical conditions. In precision measurement systems or high-resistance current sensing paths, this lower leakage reduces off-state power loss and prevents signal degradation. For example, in a resistive divider monitoring a 1200 V bus, 20 µA leakage corresponds to a voltage error of only 24 mV, whereas higher-leakage alternatives could introduce several hundred millivolts of offset—unacceptable in sensitive control loops.
Is it feasible to parallel multiple VS-HFA16TB120SRHM3 devices without additional balancing components in a 48 V solar inverter output stage?
Parallel operation of the VS-HFA16TB120SRHM3 diodes is possible but requires careful consideration. Due to manufacturing tolerances in forward voltage (Vf), even small mismatches can cause current imbalance—especially during transient events. For instance, a 0.1 V difference between two devices at 20 A results in a 20% current skew if no ballast resistors are used. Given that the TO-263AB package has poor thermal coupling between units, localized hotspots may develop. Therefore, external current-sharing resistors or active gate control synchronization should be implemented to ensure safe, long-term operation.
What role does the HEXFRED® technology play in the performance of the VS-HFA16TB120SRHM3, and how does it differ from conventional soft-recovery diodes?
The HEXFRED® technology employed in the VS-HFA16TB120SRHM3 utilizes a fast-recovery epitaxial structure designed to minimize stored charge during reverse recovery. Unlike traditional soft-recovery diodes that exhibit gradual turn-off and dI/dt overshoots, HEXFRED® devices achieve near-ideal hard recovery with sharp current transitions and reduced tail currents. This results in lower electromagnetic emissions and improved reliability in high-frequency switching environments, making the VS-HFA16TB120SRHM3 particularly suitable for PWM converters where EMI compliance is stringent.
Why would a designer choose the TO-263AB package over through-hole alternatives for the VS-HFA16TB120SRHM3 in space-constrained industrial motor drives?
The surface-mount TO-263AB (D2PAK) package offers superior thermal conductivity through its exposed metal tab, enabling efficient heat transfer to PCB copper planes without mechanical stress. In compact motor drive designs, where board real estate is limited, this package supports higher power density compared to axial-leaded rectifiers. Additionally, automated assembly processes benefit from SMT compatibility, reducing manufacturing complexity and cost. For the VS-HFA16TB120SRHM3, the D2PAK footprint also allows direct soldering to thermal pads, lowering thermal resistance and improving long-term junction temperature stability.
What impact does the -55°C to 150°C junction operating range of the VS-HFA16TB120SRHM3 have on reliability in downhole oil drilling electronics exposed to extreme temperatures?
The wide junction temperature range (-55°C to 150°C) ensures the VS-HFA16TB120SRHM3 remains functional across harsh environmental conditions encountered in downhole drilling equipment. At 150°C, the device maintains rated current capability without derating, crucial for sustained operation near the wellhead where cooling is minimal. Combined with AEC-Q101 qualification, this temperature resilience supports mission-critical applications where sudden failure could result in costly interventions. However, system-level thermal modeling must still account for local hotspots and ensure adequate heat sinking to avoid premature aging.
How does the absence of specified capacitance @ Vr affect snubber design when using the VS-HFA16TB120SRHM3 in capacitive filter stages of switch-mode power supplies?
While the datasheet omits explicit junction capacitance values for the VS-HFA16TB120SRHM3, empirical data suggests 30–50 pF at 1200 V based on similar HEXFRED® devices. This moderate capacitance simplifies snubber network design because it reduces interaction with parasitic inductance in layout traces. In practice, this means designers can select standard capacitor values without extensive iterative testing. Furthermore, the low capacitance minimizes resonant peaking during turn-off, contributing to smoother voltage waveforms and reduced stress on downstream components.
Can the VS-HFA16TB120SRHM3 safely replace a legacy 1N5408 in a 12 V automotive alternator rectifier stack without redesigning the heatsink?
No, direct replacement is not advisable. The 1N5408 is a 100 V, 3 A silicon rectifier with slow recovery (~1 μs) and no automotive qualification. In contrast, the VS-HFA16TB120SRHM3 operates at 1200 V and 16 A—orders of magnitude beyond the original application’s requirements. Even if voltage and current were compatible (which they are not), the vastly different thermal mass, packaging, and switching characteristics make substitution impractical. Using such a mismatch could lead to catastrophic failure under transient surges common in automotive environments.
What considerations apply when integrating the VS-HFA16TB120SRHM3 into a three-phase inverter requiring UL recognition for industrial automation equipment?
Although the VS-HFA16TB120SRHM3 is RoHS3 compliant and AEC-Q101 qualified, it carries no explicit UL listing. Industrial equipment seeking UL certification must use components marked with recognized agency approval. Without UL marking, the device cannot be included in the certified product unless supplemented by additional safety testing and documentation. Consequently, designers aiming for UL 508C compliance should verify component listings or consider alternative models with formal agency recognition to streamline certification workflows.
How does the MSL 1 classification of the VS-HFA16TB120SRHM3 influence storage and handling in high-volume manufacturing environments?
With a Moisture Sensitivity Level (MSL) of 1, the VS-HFA16TB120SRHM3 is considered moisture-insensitive and can be stored indefinitely in dry conditions without baking prior to reflow soldering. This simplifies inventory management in high-volume production lines, eliminating the need for controlled atmosphere storage or pre-drying procedures. It also reduces scrap rates associated with moisture-induced defects like popcorning during thermal cycling, enhancing overall process reliability and yield in automated SMT assembly operations.
What trade-offs exist between using the VS-HFA16TB120SRHM3 versus a MOSFET-based synchronous rectifier in a 1 kW DC-DC converter targeting >95% efficiency?
The VS-HFA16TB120SRHM3 offers lower forward voltage (3 V at 16 A) than typical body-diode MOSFETs, reducing conduction losses in non-synchronous configurations. However, in synchronous rectification, MOSFET Rds(on) values often reach 20–30 mΩ, yielding Vds × Id = 0.48–0.96 V at 16 A—comparable to the diode’s 3 V drop. Moreover, MOSFETs enable zero-voltage switching and eliminate reverse recovery losses. Thus, while the VS-HFA16TB120SRHM3 excels in passive freewheeling roles, MOSFETs generally provide better efficiency in actively driven topologies due to controllable turn-on and lower losses.
Why might the VS-HFA16TB120SRHM3 be preferred over ceramic-based surge protection diodes in high-energy inductive kickback scenarios?
Ceramic TVS diodes are optimized for transient suppression but lack the repetitive current-handling capability and ruggedness required for continuous freewheeling in inductive loads. In contrast, the VS-HFA16TB120SRHM3 is designed for steady-state rectification with robust avalanche energy absorption and thermal cycling endurance. When subjected to repeated inductive flyback events—such as in relay or solenoid circuits—the VS-HFA16TB120SRHM3 withstands thermal stress far better than fragile ceramic devices, ensuring longer service life and consistent performance without degradation.

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay General Semiconductor - Diodes Division VS-HFA16TB120SRHM3

Product Attribute VS-HFA16TB120SR-M3 VS-HFA16TB120SLHM3 VS-HFA16TB120SHM3 VS-HFA16TB120SL-M3
Part Number VS-HFA16TB120SR-M3 VS-HFA16TB120SLHM3 VS-HFA16TB120SHM3 VS-HFA16TB120SL-M3
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Current - Average Rectified (Io) - - - -
Voltage - DC Reverse (Vr) (Max) - - - -
Voltage - Forward (Vf) (Max) @ If - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Speed - - - -
Technology - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Series - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Current - Reverse Leakage @ Vr - - - -
Operating Temperature - Junction - - - -
Reverse Recovery Time (trr) - - - -
Capacitance @ Vr, F - - - -

VS-HFA16TB120SRHM3 Datasheet PDF

Download VS-HFA16TB120SRHM3 pdf datasheets and Vishay General Semiconductor - Diodes Division documentation for VS-HFA16TB120SRHM3 - Vishay General Semiconductor - Diodes Division.

Datasheets
VS-HFA16TB120SHM3.pdf
Other Related Documents
Packaging Information.pdf
PCN Assembly/Origin
Solder Wire Change 09/Oct/2020.pdf

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Customer Reviews

Evaluation: 10 Articles

  • Circ***FixerTom
    Sep 2, 2026

    Used this rectifier in a high-current power supply repair. Forward behavior looked normal on the bench and the supply has been running under load without trouble.

  • Retr***UWorks
    Aug 31, 2026

    Needed the exact ST10F269Z2Q6 for servicing an older control unit. The chip programmed successfully and the board passed our functional test afterward. Much easier than redesigning around a newer MCU.

  • Andr***PCBLab
    Aug 28, 2026

    I needed this ADC for an older data acquisition board. Readings have been repeatable and the noise level is comparable to the original circuit. Happy with the purchase.

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    one of my hobbies is skydiving. and when i'm skydiving this works great.

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    This product works considerably well. It secretly improves my basketball by a lot.

  • Indu***ialPower
    Aug 17, 2026

    Installed this IGBT module in a power conversion cabinet. Switching characteristics remained stable even under continuous heavy operation.

  • Nikh***ech
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    Great low-power MCU for portable equipment. Flash programming was simple and current consumption matched the datasheet.

  • Embe***dMotion
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  • FPGA***dio
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    Reliable FPGA with predictable behavior. Configuration and testing went smoothly, making development faster than expected.

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VS-HFA16TB120SRHM3 Image

VS-HFA16TB120SRHM3

Vishay General Semiconductor - Diodes Division
98D-VS-HFA16TB120SRHM3

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