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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - SingleVS-HFA16TB120STRLP
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VS-HFA16TB120STRLP - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number
VS-HFA16TB120STRLP
Manufacturer
Vishay General Semiconductor – Diodes Division
Allelco Part Number
98D-VS-HFA16TB120STRLP
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
4,984 pcs available, New & Original
Parts Description
DIODE GEN PURP 1.2KV 16A TO263AB
Package
TO-263AB (D²PAK)
Data sheet
VS-HFA16TB120ST.pdf

Other Related Documents

Packaging Information.pdf
RoHs Status
ROHS3 Compliant
Our certification
In stock: 4984

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Specifications

VS-HFA16TB120STRLP Tech Specifications
Vishay General Semiconductor - Diodes Division - VS-HFA16TB120STRLP technical specifications, attributes, parameters and parts with similar specifications to Vishay General Semiconductor - Diodes Division - VS-HFA16TB120STRLP

Product Attribute Attribute Value
Manufacturer Vishay General Semiconductor – Diodes Division
Voltage - Forward (Vf) (Max) @ If 3 V @ 16 A
Voltage - DC Reverse (Vr) (Max) 1200 V
Technology Standard
Supplier Device Package TO-263AB (D²PAK)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series HEXFRED®
Reverse Recovery Time (trr) 135 ns
Product Attribute Attribute Value
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tape & Reel (TR)
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Surface Mount
Current - Reverse Leakage @ Vr 20 µA @ 1200 V
Current - Average Rectified (Io) 16A
Capacitance @ Vr, F -
Base Product Number HFA16

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

What are the key thermal and electrical performance characteristics of the VS-HFA16TB120STRLP diode when operating at high ambient temperatures?
The VS-HFA16TB120STRLP is rated for a junction temperature range of -55°C to 150°C, making it suitable for harsh environments. With a maximum forward voltage drop of 3 V at 16 A, it exhibits low conduction losses even under full load. At this current, power dissipation in the device is approximately 48 W (16 A × 3 V), necessitating effective heatsinking or airflow to maintain junction temperatures within safe limits. Its TO-263AB package provides improved thermal resistance compared to standard TO-220 variants, but still requires careful thermal management in continuous-duty applications above 75°C ambient.
How does the reverse recovery time of the VS-HFA16TB120STRLP compare to other diodes in its class, and what implications does this have for switching power supply designs?
The VS-HFA16TB120STRLP features a reverse recovery time (trr) of 135 ns, which positions it as a fast-recovery diode capable of handling high-frequency switching. This is significantly faster than general-purpose rectifiers but slightly slower than ultra-fast silicon carbide (SiC) diodes like the STTH1512G (typically <75 ns). In buck converters operating above 50 kHz, this trr enables reduced switching losses compared to slower alternatives, though not matching the efficiency gains seen with SiC devices. For resonant topologies or PFC stages exceeding 20 kHz, this performance helps minimize EMI and improve overall system efficiency.
Can the VS-HFA16TB120STRLP be used interchangeably with the VS-HFA16TB120SL-M3 in industrial motor drive applications, and what design considerations apply?
While both parts share the same HEXFRED® technology and core specifications—including 1200 V breakdown voltage and 16 A average current—the VS-HFA16TB120SL-M3 may offer different packaging or lead-free finish variations that affect solder joint reliability under thermal cycling. In motor drives using IGBTs or MOSFETs at switching frequencies above 10 kHz, the identical trr and Vf ensure comparable switching behavior. However, layout parasitics and mounting orientation must be verified, as slight differences in package symmetry could influence parasitic inductance and thus snubber requirements.
What leakage current should engineers expect from the VS-HFA16TB120STRLP under full blocking conditions, and how might this impact system efficiency in high-voltage DC-DC converters?
The VS-HFA16TB120STRLP exhibits a maximum reverse leakage current of 20 µA at 1200 V. At this voltage, even a small leakage current can result in measurable power loss—specifically 24 mW (1200 V × 20 µA)—which may be non-negligible in ultra-high-efficiency (>95%) isolated DC-DC converters where total losses must remain below 1% of output power. While acceptable for most industrial systems, in photovoltaic inverters or telecom power supplies, this leakage may contribute to standby losses unless mitigated through proper derating or alternative component selection.
Is the VS-HFA16TB120STRLP suitable for use in a 3-phase bridge rectifier configuration feeding a 1200 V DC bus, and what gate drive considerations arise?
Yes, the VS-HFA16TB120STRLP can serve as one phase in a three-diode rectifier stack for a 1200 V DC link, provided each diode is rated for the peak repetitive reverse voltage and average forward current per phase. Given its 1200 V Vr and 16 A Io, it supports typical industrial rectifier designs up to 50 kVA. However, during turn-off transients, the 135 ns trr generates high di/dt stress on adjacent components. Gate drivers for associated switches should include soft-start functionality, and PCB traces must minimize loop inductance to prevent overshoot beyond the diode’s avalanche rating.
How does the capacitance behavior of the VS-HFA16TB120STRLP influence snubber circuit design in inductive load switching applications?
Although the datasheet does not specify junction capacitance, the HEXFRED® construction implies moderate Cj values typical of fast recovery silicon diodes (~100–200 pF). This capacitance interacts with stray inductance to form a resonant network during turn-off, potentially amplifying voltage spikes. Therefore, in applications such as relay coils or transformer secondary rectification, an RCD snubber may still be required despite the fast trr. The choice between RC absorption and active clamping depends on switching frequency and energy recovery needs.
What are the implications of the discontinued status for the VS-HFA16TB120STRLP on long-term product lifecycle planning?
As the VS-HFA16TB120STRLP has been discontinued by Digi-Key, designers relying on it must evaluate substitution options like the VS-HFA16TB120SL-M3 or third-party equivalents such as STTH1512G. While functional parity exists in terms of voltage, current, and speed, long-term availability risks remain. Engineering teams should conduct reliability testing—especially thermal cycling and solder fatigue under operational profiles—before committing to any substitute, particularly in medical or automotive end products requiring >10-year service life.
In what scenarios would the VS-HFA16TB120STRLP outperform ceramic-based diodes despite its silicon construction?
The VS-HFA16TB120STRLP offers superior ruggedness and cost-effectiveness compared to emerging wide-bandgap ceramics in applications where extreme surge tolerance (e.g., I²t withstand >100 A²s) and mechanical durability outweigh the need for zero reverse recovery. For industrial welding machines or inductive kickback protection in lighting ballasts, the robust TO-263AB package and proven failure mode control make it preferable over brittle ceramic alternatives, especially at currents below 20 A where conduction losses dominate system efficiency.
How does the operating temperature range of the VS-HFA16TB120STRLP affect its performance in automotive traction inverter auxiliary circuits?
With a junction temperature range extending to 150°C, the VS-HFA16TB120STRLP aligns with automotive grade AEC-Q101 requirements for auxiliary converters in electric vehicles. In battery charging modules or cabin heating controllers, sustained operation near 125°C ambient demands careful derating of both current and power dissipation. Thermal modeling should account for the package’s θJA (typically ~40°C/W in free air), ensuring that worst-case power loss does not exceed 1.5 W to maintain Tj < 140°C during cold-start cycles.
What trade-offs exist between using the VS-HFA16TB120STRLP versus synchronous rectification in a 1200 V half-bridge converter?
Replacing the VS-HFA16TB120STRLP with a MOSFET-based synchronous rectifier eliminates reverse recovery losses but introduces conduction losses due to higher Rdson (typically >100 mΩ vs. diode’s 0.18 Ω equivalent). At light loads (<5 A), the diode’s simplicity and lower gate drive overhead may yield better efficiency. However, above 10 A, the synchronous solution becomes advantageous despite complexity. The decision hinges on switching frequency, duty cycle asymmetry, and cost constraints in medium-power industrial drives.
How does the moisture sensitivity level (MSL 1) of the VS-HFA16TB120STRLP simplify manufacturing processes in high-volume electronics assembly?
Classified as MSL 1 (unlimited floor life), the VS-HFA16TB120STRLP eliminates the need for bake-out procedures before reflow soldering, reducing production bottlenecks in automated SMT lines. This characteristic benefits manufacturers assembling large quantities of power supplies or motor controllers where lead-free reflow profiles must be tightly controlled. Combined with RoHS3 compliance, it supports streamlined supply chain logistics without compromising reliability in dry storage conditions.
What are the critical layout guidelines when integrating the VS-HFA16TB120STRLP into a compact PCB design with high dv/dt transients?
Due to its 135 ns trr and high dV/dt capability, the VS-HFA16TB120STRLP demands short Kelvin connections to sense terminals and minimize parasitic inductance in the commutation path. Ground plane stitching under the tab and symmetrical placement relative to switching nodes reduce ground bounce. Decoupling capacitors (≥0.1 µF ceramic) placed within 5 mm of the cathode pin suppress high-frequency oscillations caused by rapid charge injection during turn-on. These practices are essential in flyback or boost converters exceeding 300 V/µs slew rates.
Why might the VS-HFA16TB120STRLP be preferred over a standard 1200 V 16 A diode in a solar microinverter’s output stage?
Unlike standard silicon rectifiers with trr > 500 ns, the VS-HFA16TB120STRLP’s fast recovery minimizes switching noise and electromagnetic interference (EMI) in grid-tied microinverters operating at 8–25 kHz. This reduces filter size and improves compliance with CISPR 11 standards. Additionally, its low Vf reduces conduction losses across partial-load conditions common in solar generation, contributing to higher annual energy yield—a key metric in residential inverter performance evaluation.
How does the package type (TO-263AB / D2PAK) of the VS-HFA16TB120STRLP influence thermal performance compared to through-hole alternatives?
The surface-mount TO-263AB package provides lower thermal resistance than traditional TO-220 due to direct attachment to a metal pad on the PCB, enabling conduction cooling through the board itself. Typical θJC is ~1.5°C/W, improving heat spreading over larger copper areas. This allows higher continuous current density than bolted TO-247 packages in space-constrained designs, though it requires adequate via arrays and inner-layer heatsinking for sustained loads above 10 A.
What precautions should be taken when substituting the VS-HFA16TB120STRLP with the ISL9R18120S3ST in a legacy industrial controller?
The ISL9R18120S3ST is a silicon carbide Schottky diode with 1200 V and 18 A ratings, offering near-zero reverse recovery but higher forward voltage (≈2.8 V at 10 A). Direct substitution risks increased conduction losses unless current is reduced. Also, its lower capacitance may alter snubber dynamics. Designers must verify compatibility in terms of physical footprint, thermal interface, and gate drive isolation if used alongside MOSFETs, as the transient response differs significantly from HEXFRED® behavior.

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay General Semiconductor - Diodes Division VS-HFA16TB120STRLP

Product Attribute VS-HFA16TB120STRRP VS-HFA16TB120SPBF VS-HFA16TB120SRHM3 VS-HFA16TB120SR-M3
Part Number VS-HFA16TB120STRRP VS-HFA16TB120SPBF VS-HFA16TB120SRHM3 VS-HFA16TB120SR-M3
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Series - - - -
Speed - - - -
Reverse Recovery Time (trr) - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
Voltage - DC Reverse (Vr) (Max) - - - -
Capacitance @ Vr, F - - - -
Technology - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Operating Temperature - Junction - - - -
Voltage - Forward (Vf) (Max) @ If - - - -
Current - Average Rectified (Io) - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Current - Reverse Leakage @ Vr - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad

VS-HFA16TB120STRLP Datasheet PDF

Download VS-HFA16TB120STRLP pdf datasheets and Vishay General Semiconductor - Diodes Division documentation for VS-HFA16TB120STRLP - Vishay General Semiconductor - Diodes Division.

Datasheets
VS-HFA16TB120SPbF.pdf
PCN Assembly/Origin
Mult Devices Assembly 19/Jan/2018.pdf
Other Related Documents
Packaging Information.pdf

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VS-HFA16TB120STRLP Image

VS-HFA16TB120STRLP

Vishay General Semiconductor - Diodes Division
98D-VS-HFA16TB120STRLP

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