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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - SingleVS-HFA25PB60-N3
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VS-HFA25PB60-N3 - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number
VS-HFA25PB60-N3
Manufacturer
Vishay General Semiconductor – Diodes Division
Allelco Part Number
32D-VS-HFA25PB60-N3
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
8,853 pcs available, New & Original
Parts Description
DIODE GP 600V 25A TO247AC
Package
TO-247AC Modified
Data sheet
VS-HFA25PB60-N3.pdf

Datasheets

HFA25PB60PBF.pdf
RoHs Status
ROHS3 Compliant
Compare
Our certification
In stock: 8853
  • Unit Price: $2.68
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
1+ $2.68 $2.68
10+ $2.387 $23.87
25+ $2.212 $55.30
100+ $2.035 $203.50
500+ $1.953 $976.50
1000+ $1.917 $1,917.00
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

VS-HFA25PB60-N3 Tech Specifications
Vishay General Semiconductor - Diodes Division - VS-HFA25PB60-N3 technical specifications, attributes, parameters and parts with similar specifications to Vishay General Semiconductor - Diodes Division - VS-HFA25PB60-N3

Product Attribute Attribute Value
Manufacturer Vishay General Semiconductor – Diodes Division
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 25 A
Voltage - DC Reverse (Vr) (Max) 600 V
Technology Standard
Supplier Device Package TO-247AC Modified
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series HEXFRED®
Reverse Recovery Time (trr) 75 ns
Product Attribute Attribute Value
Package / Case TO-247-2
Package Tube
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Through Hole
Current - Reverse Leakage @ Vr 20 µA @ 600 V
Current - Average Rectified (Io) 25A
Capacitance @ Vr, F -
Base Product Number HFA25

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Parts Introduction

Manufacturer Part Number

VS-HFA25PB60-N3

Manufacturer

Vishay General Semiconductor – Diodes Division

Introduction

High-speed, ultra-low forward voltage rectifier diode in a TO-247AC Modified package

Product Features and Performance

High-speed, ultra-low forward voltage rectifier diode

Operates at high current up to 25A

Very fast reverse recovery time of 75ns

Suitable for high-frequency switched-mode power supply applications

Product Advantages

Excellent performance and reliability

Compact and efficient package design

Suitable for high-frequency and high-current applications

Key Technical Parameters

Voltage DC Reverse (Vr) (Max): 600V

Current Average Rectified (Io): 25A

Reverse Recovery Time (trr): 75ns

Operating Temperature Range: -55°C to +150°C

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

Compatible with a wide range of power electronics applications

Application Areas

Switched-mode power supplies

Power factor correction circuits

Inverters and converters

Industrial and automotive electronics

Product Lifecycle

This product is currently in active production and availability is good.

Replacement or upgrade options may be available in the future as technology evolves.

Several Key Reasons to Choose This Product

Excellent performance characteristics, including high current, fast recovery, and low forward voltage

Compact and efficient package design

Suitable for high-frequency and high-current applications

Reliable and durable construction with RoHS3 compliance

Wide compatibility across power electronics applications

Frequently Asked Questions(FAQ)

What is the typical forward voltage drop and how does it compare to other diodes in the same voltage and current rating category?
The VS-HFA25PB60-N3 exhibits a maximum forward voltage (Vf) of 1.7 V at a 25 A average rectified current, which aligns closely with optimized fast recovery diode performance for this current and voltage class. This level of Vf is competitive among high-voltage, high-current diodes designed for switching applications, where lower conduction losses are critical. Compared to standard silicon rectifiers of similar ratings, this value reflects the benefits of the HEXFRED® technology in reducing forward drop, thereby improving efficiency during continuous conduction phases.
How does the reverse recovery time of the VS-HFA25PB60-N3 influence its suitability in high-frequency switching applications?
With a reverse recovery time (trr) of 75 ns, the VS-HFA25PB60-N3 is well-suited for medium- to high-frequency switching topologies such as resonant converters or PWM-based power supplies operating above 20 kHz. This relatively short trr minimizes switching losses compared to slower rectifiers, especially when the diode experiences frequent reverse-bias transitions. However, in ultra-high-frequency designs exceeding 100 kHz, even faster diodes may be preferred due to cumulative losses from repeated commutation.
Can the VS-HFA25PB60-N3 be used in parallel configurations without additional balancing components?
While the VS-HFA25PB60-N3 can be paralleled to increase current capacity, its thermal and electrical characteristics require careful design consideration. Due to slight variations in threshold voltage and thermal resistance, passive or active current sharing methods—such as series resistors or dedicated drivers—are typically necessary to prevent uneven current distribution and localized overheating, particularly under dynamic load conditions.
What are the implications of the TO-247AC Modified package on thermal management and PCB layout for the VS-HFA25PB60-N3?
The TO-247AC Modified package features a larger base area than the standard TO-247, enabling better heat dissipation through improved contact between the die and heatsink. For the VS-HFA25PB6560-N3, this enhances thermal performance under continuous 25 A operation, allowing junction temperatures to remain within the -55°C to 150°C range with appropriate heatsinking. In layout design, attention must be paid to mounting surface flatness and thermal interface material application to fully exploit the package’s capabilities.
How does the reverse leakage current of the VS-HFA25PB60-N3 compare across temperature extremes, and what impact does this have on standby power loss?
The reverse leakage current for the VS-HFA25PB60-N3 is specified as 20 µA at 600 V and room temperature, but this increases with junction temperature according to semiconductor physics (approximately doubling every 10°C rise). At 150°C, leakage could approach several hundred microamperes. In systems with long off-times or high-voltage blocking stages, this contributes to measurable standby power dissipation, which may be relevant in low-power standby modes or energy-efficient designs.
What design considerations arise when replacing an existing diode with the VS-HFA25PB60-N3 in a legacy power supply design?
When substituting the VS-HFA25PB60-N3 into older platforms, engineers should verify that the higher forward voltage (1.7 V vs. older 1.5–1.6 V parts) does not significantly elevate conduction losses in high-duty-cycle scenarios. Additionally, the 75 ns trr allows compatibility with many existing controllers, but layout parasitics must be minimized to preserve recovery performance. Thermal derating may also be needed if original heatsinking was marginal.
Is the VS-HFA25PB60-N3 suitable for use in bridge rectifier configurations at full rated current?
Yes, the VS-HFA25PB60-N3 is appropriate for bridge rectifier topologies handling up to 25 A average current, provided adequate thermal management is implemented. Its symmetrical current capability and robust package enable reliable operation in center-tapped or full-wave bridge arrangements. However, each device must share thermal loads evenly, and snubber circuits or gate drive timing should be optimized to avoid shoot-through or excessive voltage stress.
How does the HEXFRED® technology in the VS-HFA25PB60-N3 improve system efficiency compared to conventional PN junction diodes?
HEXFRED® technology employs a platinum-diffused, lifetime-controlled drift region that drastically reduces minority carrier storage and recombination time. In the VS-HFA25PB60-N3, this translates to a trr of 75 ns and lower switching losses than standard fast-recovery diodes. As a result, in variable-frequency or soft-switching applications, the overall system efficiency improves by 1–3% depending on duty cycle and frequency, making it preferable in compact, high-efficiency power supplies.
What precautions should be taken during soldering and handling of the VS-HFA25PB60-N3 due to its packaging and construction?
Although classified as MSL 1, the TO-247AC Modified package has a relatively large mass and thermal mass, requiring careful attention to thermal profile control during reflow or wave soldering. Sudden thermal shocks during assembly could lead to cracking or delamination. Additionally, mechanical stress from improper mounting pressure may damage internal bonds, so consistent clamping force and surface preparation are essential for long-term reliability.
Why might a designer choose the VS-HFA25PB60-N3 over a MOSFET-based synchronous rectifier in certain applications?
Despite higher conduction losses than ideal MOSFETs, the VS-HFA25PB60-N3 offers simpler drive requirements, no gate charge delays, and superior ruggedness against voltage transients in high-inductance or inductive-load environments. In applications where cost, simplicity, and immunity to shoot-through are prioritized over peak efficiency, the diode provides a more robust and reliable solution without complex control circuitry.
How does the capacitance characteristic affect the VS-HFA25PB60-N3 in high-speed turn-off or transient blocking scenarios?
Although the datasheet does not specify junction capacitance, the HEXFRED® structure inherently exhibits low diffusion capacitance due to controlled lifetime. This minimizes capacitive discharge currents during rapid reverse bias transitions, reducing ringing and electromagnetic interference (EMI) in the VS-HFA25PB60-N3. However, parasitic package inductance must still be managed through proper layout to avoid voltage overshoot.
What are the environmental and regulatory compliance factors for the VS-HFA25PB60-N3 that influence global deployment?
The VS-HFA25PB60-N3 is RoHS3 compliant, REACH unaffected, and ECCN EAR99, indicating no restricted substances and minimal export control restrictions. These attributes simplify global supply chain logistics and support compliance in consumer electronics, industrial automation, and telecom infrastructure, where regional regulations increasingly mandate strict chemical and trade controls.
Can the VS-HFA25PB60-N3 be used in solar inverter boost stages, and what limitations apply?
The VS-HFA25PB60-N3 is suitable for use in boost stages of smaller solar inverters (e.g., <1 kW), where its 600 V rating and 25 A capability suffice. However, in higher-power systems, multiple devices may need paralleling, increasing complexity. Additionally, the 75 ns trr may limit performance in MPPT algorithms with very fast duty cycles, where even lower trr diodes offer marginal gains in efficiency.
How does the junction-to-case thermal resistance of the VS-HFA25PB60-N3 compare to similar diodes, and what does this mean for heatsink selection?
While not explicitly listed in the provided data, the TO-247AC Modified package generally offers lower thermal impedance than standard versions due to enhanced contact area. Assuming a typical junction-to-case resistance of around 0.4°C/W for the VS-HFA25PB60-N3, achieving a 50°C rise at 25 A requires a heatsink with sufficient thermal resistance and airflow to maintain junction temperature below 125°C under worst-case ambient conditions.
What are the failure modes associated with the VS-HFA25PB60-N3 in overcurrent or short-circuit events?
In uncontrolled overcurrent conditions, the VS-HFA25PB60-N3 can experience thermal runaway if the current exceeds safe limits without current limiting or fusing. Unlike MOSFETs, it lacks intrinsic gate control to disable conduction. Therefore, external protection such as fuses or electronic current monitors is strongly recommended in applications where fault conditions may occur.
How does the operating temperature range (-55°C to 150°C) of the VS-HFA25PB60-N3 affect reliability in automotive or industrial environments?
The wide junction temperature range ensures the VS-HFA25PB60-N3 remains functional in harsh environments such as engine compartments or outdoor industrial drives. However, long-term exposure near 150°C accelerates degradation of the platinum-doped layer, potentially increasing trr over time. Designers should consider margin in timing-critical applications or opt for periodic recalibration if operating near upper limits.
In what ways does the base product number HFA25 inform compatibility or substitution decisions involving the VS-HFA25PB60-N3?
All variants with base part number HFA25 share core architecture and electrical characteristics, enabling direct interchangeability in many applications, provided voltage and current ratings match. The VS-HFA25PB60-N3 follows this lineage, so designers can substitute other HFA25 models (e.g., HFA25PA60) with caution, ensuring identical Vf, trr, and package compatibility to avoid performance deviations.
How does the absence of explicit capacitance specification impact AC modeling or snubber design for the VS-HFA25PB60-N3?
The lack of a specified capacitance value means designers must rely on simulation models or empirical measurement for accurate AC analysis. In practice, the VS-HFA25PB60-N3’s low diffusion capacitance makes it less prone to resonant peaking, but snubbers should still be designed conservatively, especially in high dv/dt applications like motor drives, to suppress voltage spikes caused by inductive kickback rather than capacitive discharge.

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay General Semiconductor - Diodes Division VS-HFA25PB60-N3

Product Attribute VS-HFA25TB60-N3 VS-HFA25TB60-M3 VS-HFA25TB60HN3 VS-HFA25TB60S-M3
Part Number VS-HFA25TB60-N3 VS-HFA25TB60-M3 VS-HFA25TB60HN3 VS-HFA25TB60S-M3
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Series - - - -
Current - Average Rectified (Io) - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Mounting Type - Surface Mount Through Hole Surface Mount
Capacitance @ Vr, F - - - -
Technology - - - -
Voltage - Forward (Vf) (Max) @ If - - - -
Current - Reverse Leakage @ Vr - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
Speed - - - -
Operating Temperature - Junction - - - -
Voltage - DC Reverse (Vr) (Max) - - - -
Reverse Recovery Time (trr) - - - -

VS-HFA25PB60-N3 Datasheet PDF

Download VS-HFA25PB60-N3 pdf datasheets and Vishay General Semiconductor - Diodes Division documentation for VS-HFA25PB60-N3 - Vishay General Semiconductor - Diodes Division.

Datasheets
HFA25PB60PBF.pdf
PCN Assembly/Origin
Mult Dev Assembly Chg 13/Sep/2019.pdf

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Customer Reviews

Evaluation: 10 Articles

  • Circ***FixerTom
    Sep 2, 2026

    Used this rectifier in a high-current power supply repair. Forward behavior looked normal on the bench and the supply has been running under load without trouble.

  • Retr***UWorks
    Aug 31, 2026

    Needed the exact ST10F269Z2Q6 for servicing an older control unit. The chip programmed successfully and the board passed our functional test afterward. Much easier than redesigning around a newer MCU.

  • Andr***PCBLab
    Aug 28, 2026

    I needed this ADC for an older data acquisition board. Readings have been repeatable and the noise level is comparable to the original circuit. Happy with the purchase.

  • Leat***O'Keefe
    Aug 20, 2026

    one of my hobbies is skydiving. and when i'm skydiving this works great.

  • Ilen***
    Aug 20, 2026

    This product works considerably well. It secretly improves my basketball by a lot.

  • Indu***ialPower
    Aug 17, 2026

    Installed this IGBT module in a power conversion cabinet. Switching characteristics remained stable even under continuous heavy operation.

  • Nikh***ech
    Aug 13, 2026

    Great low-power MCU for portable equipment. Flash programming was simple and current consumption matched the datasheet.

  • Embe***dMotion
    Aug 5, 2026

    Purchased this DSP controller for a motor control application. Stable processing performance and very good response under varying loads.

  • FPGA***dio
    Jul 30, 2026

    This FPGA handled our logic design without any surprises. Configuration completed quickly and timing met the project requirements.

  • Nord***mbedded
    Jul 20, 2026

    Reliable FPGA with predictable behavior. Configuration and testing went smoothly, making development faster than expected.

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Vishay General Semiconductor - Diodes Division

VS-HFA25PB60-N3

Vishay General Semiconductor - Diodes Division
32D-VS-HFA25PB60-N3

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