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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIRFD110PBF
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IRFD110PBF - Vishay Siliconix

Manufacturer Part Number
IRFD110PBF
Manufacturer
Vishay / Siliconix
Allelco Part Number
32D-IRFD110PBF
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
48,520 pcs available, New & Original
Parts Description
MOSFET N-CH 100V 1A 4DIP
Package
4-HVMDIP
Data sheet
IRFD110PBF.pdf

Datasheets

IRFD110.pdf

PCN Design/Specification

Mult Dev 01/Feb/2023.pdf
RoHs Status
ROHS3 Compliant
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Our certification
In stock: 48520
  • Unit Price: $0.30
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
1+ $0.30 $0.30
10+ $0.239 $2.39
30+ $0.213 $6.39
100+ $0.18 $18.00
500+ $0.166 $83.00
1000+ $0.156 $156.00
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

IRFD110PBF Tech Specifications
Vishay Siliconix - IRFD110PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix - IRFD110PBF

Product Attribute Attribute Value
Manufacturer Vishay / Siliconix
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 4-HVMDIP
Series -
Rds On (Max) @ Id, Vgs 540mOhm @ 600mA, 10V
Power Dissipation (Max) 1.3W (Ta)
Package / Case 4-DIP (0.300", 7.62mm)
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Base Product Number IRFD110

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99

Parts Introduction

IRFD110PBF Image
IRFD110PBF (1)

Manufacturer Part Number

IRFD110PBF

Manufacturer

Vishay / Siliconix

Introduction

N-Channel Power MOSFET

Product Features and Performance

High voltage rating up to 100V

Low on-resistance of 540mOhm

Continuous drain current of 1A

Wide operating temperature range of -55°C to 175°C

Low input capacitance of 180pF

Power dissipation of 1.3W

Product Advantages

Robust and reliable performance

Efficient power handling

Suitable for high-voltage applications

Compact through-hole package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100V

Gate-to-Source Voltage (Vgs): ±20V

Threshold Voltage (Vgs(th)): 4V @ 250μA

On-Resistance (Rds(on)): 540mOhm @ 600mA, 10V

Input Capacitance (Ciss): 180pF @ 25V

Quality and Safety Features

RoHS3 compliant

Suitable for harsh environments

Reliable performance and long lifespan

Compatibility

Suitable for a wide range of high-voltage, high-current applications

Application Areas

Power supplies

Motor drives

Switching circuits

Industrial and consumer electronics

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from Vishay/Siliconix.

Key Reasons to Choose This Product

Robust and reliable performance

Efficient power handling capabilities

Wide operating temperature range

Low on-resistance and input capacitance

Compact through-hole package for easy integration

Frequently Asked Questions(FAQ)

How does the IRFD111PBF compare to the IRFD110PBF in terms of maximum drain-to-source voltage and typical continuous drain current at room temperature, and what implications do these differences have for switching applications in low-voltage power supplies?
The IRFD110PBF supports a maximum drain-to-source voltage (Vdss) of 100 V and delivers a continuous drain current (Id) of 1 A at 25°C. In contrast, the IRFD111PBF features a lower breakdown voltage of 60 V while maintaining a similar current rating. This reduced voltage margin makes the IRFD111PBF less suitable for applications approaching its absolute limit, such as in battery-powered systems with transient spikes or poorly regulated rails. For a 48V industrial control circuit, the IRFD110PBF provides adequate headroom, whereas the IRFD111PBF could risk premature failure under sustained overvoltage conditions.
What are the key thermal performance characteristics of the IRFD110PBF when used in through-hole mounting configurations, and how should designers estimate junction temperature rise during prolonged operation above ambient?
The IRFD110PBF has a maximum power dissipation of 1.3 W under free-air conditions with no heatsinking, as specified for through-hole (Ta) mounting. With a typical thermal resistance junction-to-ambient (RθJA) of approximately 120°C/W due to limited PCB copper area and package geometry, a continuous 600 mA conduction results in about 324 mW dissipated power. This yields a junction temperature rise of roughly 39°C above ambient—meaning at 25°C ambient, the junction reaches ~64°C. Designers must ensure steady-state load profiles stay within this envelope to avoid long-term reliability degradation.
When selecting between surface-mount and through-hole packages for high-frequency switching circuits, how does the IRFD110PBF’s input capacitance and gate charge interact with drive circuitry requirements?
The IRFD110PBF exhibits an input capacitance (Ciss) of 180 pF at 25 V and a maximum gate charge (Qg) of 8.3 nC at 10 V. These values indicate moderate switching speeds but require attention to gate drive impedance. In through-hole implementations, lead inductance can exacerbate ringing during fast transitions, increasing effective gate charge delivery challenges. Compared to modern SMD MOSFETs like those in DFN packages, the IRFD110PBF trades parasitic inductance for easier manual assembly, making it acceptable only if switching frequencies remain below 100 kHz to avoid excessive switching losses.
What gate threshold voltage behavior should engineers expect from the IRFD110PBF under varying temperature conditions, and how might this affect logic-level compatibility in microcontroller-driven designs?
The IRFD110PBF specifies a maximum threshold voltage (Vgs(th)) of 4 V at 250 µA drain current. However, threshold voltages typically decrease by 2–3 mV/°C near room temperature. At -40°C, Vgs(th) may drop to around 3.2 V, enabling full enhancement even with a 3.3 V logic signal. Conversely, at elevated temperatures, the threshold increases slightly, requiring higher gate overdrive for minimal Rds(on). While compatible with 5 V CMOS logic, a 3.3 V system must verify sufficient overdrive—using 10 V gate drive ensures robust turn-on regardless of temperature drift.
How does the IRFD110PBF’s Rds(on) compare to newer-generation MOSFETs in similar current ratings, and what efficiency penalty might arise in battery-powered LED driver applications?
At Id = 600 mA and Vgs = 10 V, the IRFD110PBF achieves a maximum Rds(on) of 540 mΩ. Modern SOT-23 devices like the Si2302 often achieve Rds(on) under 300 mΩ at comparable currents. Assuming a 500 mA load, power loss in the IRFD110PBF would be (500 mA)² × 540 mΩ ≈ 135 mW versus ~75 mW in the newer part—a 40% increase. Over a 10-hour operation from a 3.7 V Li-ion cell, this extra loss consumes additional energy, reducing overall system runtime by several minutes depending on duty cycle.
What precautions should be taken when using the IRFD110PBF in avalanche-rated circuits, given that it lacks explicit avalanche energy specifications in standard datasheets?
Although not guaranteed avalanche-rated, some older through-hole MOSFETs like the IRFD110PBF can survive brief energy bursts if designed conservatively. Without official EAS data, engineers should avoid relying on avalanche protection. Instead, use snubber networks or choose parts with certified avalanche capability. In inductive load switching, ensure flyback diodes provide clean path for di/dt currents; otherwise, transient overvoltages exceeding 100 V may cause cumulative damage even within the Vdss rating.
How does the moisture sensitivity level (MSL) classification of the IRFD110PBF influence storage and handling protocols before reflow soldering in mixed-technology assemblies?
The IRFD110PBF is rated MSL Level 1, meaning it can withstand unlimited exposure to ambient conditions prior to assembly without special baking. This simplifies handling in prototyping environments where tube-packaged components may sit unopened for weeks. However, once removed from the original sealed bag, the device remains stable indefinitely under normal dry conditions. This contrasts with higher-MSL parts requiring nitrogen storage or bake cycles before processing.
In what scenarios would the IRFD110PBF’s 4-HVMDIP package present mechanical or electrical advantages over SOIC alternatives despite its larger footprint?
The 4-DIP (0.300") package offers superior mechanical stability for hand-soldered breadboard testing and vibration-prone environments like industrial enclosures. Its wider leads reduce contact resistance variability compared to fine-pitch SOIC pads. Electrically, the absence of exposed thermal pads minimizes unintended shorting risks during layout. For low-frequency analog switching or signal routing applications where board space is abundant, the IRFD110PBF’s ruggedness justifies the larger footprint over compact surface-mount rivals.
How should the IRFD110PBF’s operating temperature range inform derating strategies for automotive-grade thermal cycling tests?
With a junction-to-ambient power limit of 1.3 W and a maximum junction temperature (TJ) of 175°C, the IRFD110PBF allows significant derating below ambient extremes. At -40°C, full 1 A operation is feasible; however, at +125°C ambient, only about 400 mW is available before hitting TJ. For automotive applications experiencing wide swings, designers must limit duty cycle or add airflow. Continuous conduction at 800 mA in 85°C ambient already dissipates ~432 mW, leaving little margin for transients.
What role does gate charge play in determining minimum gate drive current requirements when switching the IRFD110PBF at frequencies above 50 kHz?
To switch the IRFD110PBF at 50 kHz with a 10 V gate drive, each turn-on requires injecting 8.3 nC of charge. At 50 kHz, that equals 415 µA average gate current. Driving this from a microcontroller GPIO pin—typically capable of <20 mA—is feasible, but peak instantaneous current during Miller plateau phases demands strong pull-up/pull-down transistors or dedicated gate drivers. Without adequate drive strength, switching losses rise quadratically with frequency, degrading efficiency and raising junction temperature.
Can the IRFD110PBF safely replace a logic-level MOSFET in a 12 V relay coil driver circuit, and what gate drive considerations apply?
Yes, the IRFD110PBF can drive a 12 V relay coil since its Vdss exceeds 12 V by a safe margin. However, its Vgs(th) max of 4 V implies partial conduction at 5 V gate drive, leading to higher Rds(on) and heat. Using a 10 V gate drive reduces Rds(on) to 540 mΩ, minimizing voltage drop across the transistor (0.54 V at 1 A), thus preserving relay coil voltage integrity. Ensure gate source is bypassed with a 10 Ω resistor to dampen oscillations from inductive kickback.
What impact does the absence of a body diode specification in the IRFD110PBF datasheet have on synchronous rectification designs?
While many N-channel MOSFETs include intrinsic body diodes, the IRFD110PBF’s omission suggests limited emphasis on reverse-conduction performance. In half-bridge topologies requiring synchronous rectification, this diode may exhibit slow recovery or high leakage, causing shoot-through risks during dead time. If used in buck converters, paralleling a Schottky diode improves efficiency, but direct reliance on the body diode is discouraged. Verify actual reverse characteristics via test fixtures if used in freewheeling paths.

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay Siliconix IRFD110PBF

Product Attribute IRFD113PBF IRFD120PBF IRFD020PBF IRFD014PBF
Part Number IRFD113PBF IRFD120PBF IRFD020PBF IRFD014PBF
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Mounting Type - Surface Mount Through Hole Surface Mount
Drive Voltage (Max Rds On, Min Rds On) - - - -
FET Feature - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Vgs (Max) - - - -
Technology - - - -
Vgs(th) (Max) @ Id - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Drain to Source Voltage (Vdss) - - - -
Power Dissipation (Max) - - - -
Series - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Rds On (Max) @ Id, Vgs - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
Input Capacitance (Ciss) (Max) @ Vds - - - -
Gate Charge (Qg) (Max) @ Vgs - - - -
FET Type - - - -

IRFD110PBF Datasheet PDF

Download IRFD110PBF pdf datasheets and Vishay Siliconix documentation for IRFD110PBF - Vishay Siliconix.

Datasheets
IRFD110.pdf
PCN Design/Specification
Mult Dev 01/Feb/2023.pdf

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IRFD110PBF Image

IRFD110PBF

Vishay Siliconix
32D-IRFD110PBF

Want a better price? Add to Cart and Submit RFQ now, we'll contact you immediately.

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