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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIRFD120
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IRFD120 - Vishay Siliconix

Manufacturer Part Number
IRFD120
Manufacturer
Vishay / Siliconix
Allelco Part Number
32D-IRFD120
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
5,360 pcs available, New & Original
Parts Description
MOSFET N-CH 100V 1.3A 4DIP
Package
4-HVMDIP
Data sheet
IRFD120.pdf

Datasheets

IRFD120.pdf

PCN Obsolescence/ EOL

SIL-018-2015-Rev-0 20/May/2015.pdf
RoHs Status
 
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Specifications

IRFD120 Tech Specifications
Vishay Siliconix - IRFD120 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix - IRFD120

Product Attribute Attribute Value
Manufacturer Vishay / Siliconix
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 4-HVMDIP
Series -
Rds On (Max) @ Id, Vgs 270mOhm @ 780mA, 10V
Power Dissipation (Max) 1.3W (Ta)
Package / Case 4-DIP (0.300", 7.62mm)
Package Bulk
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Base Product Number IRFD120

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

What are the key electrical characteristics of the IRFD120 N-channel MOSFET that make it suitable for low-voltage switching applications?
The IRFD120 operates reliably with a maximum drain-to-source voltage (Vdss) of 100 V, which provides sufficient headroom for many low-voltage industrial and power management circuits. Its continuous drain current rating of 1.3 A at 25°C (Id) ensures stable conduction under moderate load conditions without significant thermal derating. With an on-resistance (Rds(on)) as low as 270 mΩ at 780 mA and a gate threshold voltage (Vgs(th)) of up to 4 V, this device enables efficient switching even from standard logic-level drive signals. These combined attributes allow designers to minimize conduction losses while maintaining compatibility with common control circuitry.
How does the gate charge (Qg) of the IRFD120 compare to similar N-channel MOSFETs in terms of switching performance and driver requirements?
The IRFD120 has a maximum gate charge (Qg) of 16 nC at 10 V, which is relatively modest for its voltage and current ratings. This value suggests that the device can be switched efficiently using standard gate drivers without requiring high peak output currents or specialized driving circuitry. When compared to higher-power MOSFETs in the same package, such as those exceeding 100 nC, the IRFD120’s lower Qg reduces switching losses and simplifies driver design—particularly beneficial in PWM or linear regulation applications where frequency and efficiency are critical.
Can the IRFD120 be substituted with the IRFD120PBF, and what differences should engineers consider when replacing one with the other?
The IRFD120PBF is a direct substitute for the IRFD120, sharing identical electrical specifications including voltage, current, Rds(on), and pinout. However, the PBF variant typically features improved moisture sensitivity level (MSL) compliance and may include lead-free manufacturing processes, enhancing reliability in automated assembly environments. While functionally equivalent, designers must verify RoHS status and packaging details during substitution, especially in regulated industries requiring full material traceability.
What is the impact of operating temperature range on the IRFD120’s performance in automotive or industrial environments?
The IRFD120 supports an operating junction temperature range from -55°C to +175°C, making it suitable for harsh environments such as automotive under-hood systems or factory automation equipment. At elevated temperatures, the maximum continuous drain current (Id) will decrease due to reduced carrier mobility and increased leakage. Engineers should account for this by derating the device accordingly; for example, at 125°C, Id may drop below 1.3 A depending on heatsinking and ambient conditions. Thermal modeling or empirical testing is recommended for long-term reliability assessments.
How does the input capacitance (Ciss) of the IRFD120 influence high-frequency switching behavior?
With a maximum input capacitance (Ciss) of 360 pF at 25 V, the IRFD120 exhibits moderate capacitive loading on the gate driver circuit. This capacitance, combined with the 16 nC gate charge, results in a relatively low gate delay and acceptable rise/fall times for frequencies typically seen in switching regulators or motor drives operating below several hundred kHz. In higher-frequency applications (>1 MHz), however, the cumulative effect of Ciss can increase switching losses and strain gate drivers, necessitating careful layout and possibly driver selection to maintain efficiency.
Is the IRFD120 appropriate for use in battery-powered devices with strict power budget constraints?
Yes, but only if the application avoids deep saturation and operates within the specified Rds(on) window. The IRFD120’s low Rds(on) of 270 mΩ at 10 V reduces conduction loss significantly, contributing to extended battery life in portable electronics. However, since the device is not optimized for very low quiescent current or ultra-low Vgs(th), it may not outperform more modern logic-level MOSFETs designed specifically for energy-constrained systems. Additionally, its through-hole packaging limits integration density compared to surface-mount alternatives, which may affect form factor choices.
What are the implications of the IRFD120’s non-RoHS compliance for global product deployment?
The IRFD120’s RoHS non-compliance means it contains restricted substances such as lead in amounts exceeding regulatory thresholds, prohibiting its sale into the European Union and other jurisdictions enforcing similar directives. While still available in limited quantities, reliance on this part for mass-market products introduces legal and supply chain risks. Designers should transition to RoHS-compliant substitutes like the IRFD120PBF before initiating production runs intended for international markets.
How does the 4-HVMDIP package of the IRFD120 affect PCB layout and thermal management?
The 4-DIP (0.300", 7.62mm) package offers through-hole mounting compatibility but lacks a direct thermal path to a heatsink unless supplemented with external attachment methods. Its thermal resistance (θJA) is not explicitly rated in the datasheet, but typical values for similar packages suggest junction-to-ambient thermal impedance around 120–150°C/W. Therefore, in high-current or continuous-duty applications exceeding 0.8 A, localized copper pour or mechanical fastening to a heat-spreading plate is advisable to prevent thermal runaway. Surface-mount versions would offer better thermal performance for compact designs.
Can the IRFD120 operate effectively with a 3.3 V gate drive signal?
Partially. The IRFD120’s maximum Vgs(th) is 4 V at 250 µA, meaning full enhancement requires Vgs > 4 V. At 3.3 V, the device may turn on, but Rds(on) will increase significantly compared to operation at 10 V. Datasheets often show curves indicating Rds(on) degradation at lower overdrive voltages. For reliable low-loss conduction, a gate voltage closer to 10 V is preferred; thus, using a dedicated gate driver or charge pump is advised if 3.3 V logic must be used without compromising efficiency.
Why might a designer choose the IRFD120 over a surface-mount alternative despite size and cost penalties?
The IRFD120’s through-hole construction allows robust mechanical attachment, easier manual soldering, and compatibility with legacy test fixtures or prototyping boards. In low-volume or repair-oriented applications where reliability under vibration matters, the 4-DIP package offers superior durability compared to small SOT-227 or SOIC variants. Additionally, some high-voltage or high-reliability designs prioritize proven long-term performance over miniaturization, making the IRFD120 a pragmatic choice despite its larger footprint.
How does the gate-source voltage rating (±20 V) of the IRFD120 inform protection strategies in real-world circuits?
The ±20 V absolute maximum rating for Vgs indicates that transient spikes—such as those from inductive loads or electrostatic discharge—should not exceed this limit without risking gate oxide damage. While the typical operating range is narrower, incorporating a Zener clamp (e.g., 12 V bidirectional TVS diode) across the gate-source terminals helps safeguard against voltage overshoots. This precaution becomes especially important in switching environments with fast dv/dt events or unshielded wiring exposed to EMI.
What role does the base product number IRFD120 play in selecting compatible components and future-proofing designs?
The base product number IRFD120 serves as a family identifier within Vishay’s portfolio, enabling engineers to identify closely related parts with slight variations in packaging, RoHS status, or performance margins. By referencing this base number, designers can rapidly evaluate substitutes like IRFD120PBF or explore newer generations with improved metrics. It also facilitates cross-referencing across distributors and ensures consistency in documentation, reducing errors during revision updates or supply chain transitions.
Does the IRFD120 exhibit body diode conduction effects that could impact reverse polarity or freewheeling applications?
As all MOSFETs do, the IRFD120 includes a parasitic body diode between source and drain. In freewheeling or inductive kickback scenarios, this diode conducts when the channel is off and the drain voltage exceeds the source. Since the forward voltage drop of silicon diodes is typically 0.6–0.8 V, this results in additional conduction losses compared to synchronous rectification schemes. In precision or low-loss topologies, this limitation necessitates careful topology selection or use of complementary P-channel devices to avoid relying solely on the body diode.
How does the absence of explicit FET feature specifications in the IRFD120 datasheet affect application-specific customization?
The lack of listed FET features (such as avalanche-rated, logic-level optimized, or trench technology indicators) implies that the IRFD120 is a general-purpose device rather than tailored for niche requirements. Without confirmation of avalanche energy handling or soft-switching characteristics, designers cannot assume enhanced ruggedness in hard-switched environments. Consequently, simulation tools or prototype validation are essential to confirm suitability for resonant converters or fault-tolerant systems where such features would otherwise simplify safety margins.

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay Siliconix IRFD120

Product Attribute IRFD120S2497 IRFD120PBF IRFD122 IRFD210
Part Number IRFD120S2497 IRFD120PBF IRFD122 IRFD210
Manufacturer Harris Corporation Vishay Siliconix Harris Corporation Vishay Siliconix
Series - - - -
FET Type - - - -
Input Capacitance (Ciss) (Max) @ Vds - - - -
Gate Charge (Qg) (Max) @ Vgs - - - -
Drain to Source Voltage (Vdss) - - - -
Current - Continuous Drain (Id) @ 25°C - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Rds On (Max) @ Id, Vgs - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Power Dissipation (Max) - - - -
Base Product Number - DAC34H84 MAX500 ADS62P42
FET Feature - - - -
Technology - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Mounting Type - Surface Mount Through Hole Surface Mount
Vgs(th) (Max) @ Id - - - -
Vgs (Max) - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Drive Voltage (Max Rds On, Min Rds On) - - - -

IRFD120 Datasheet PDF

Download IRFD120 pdf datasheets and Vishay Siliconix documentation for IRFD120 - Vishay Siliconix.

Datasheets
IRFD120.pdf
PCN Obsolescence/ EOL
SIL-018-2015-Rev-0 20/May/2015.pdf

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Customer Reviews

Evaluation: 10 Articles

  • Arch***ct
    Jul 15, 2026

    Used this device in a communication signal processing board. Stable timing and no unexpected issues during implementation.

  • FPGA***lorer88
    Jul 7, 2026

    The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.

  • Nath***oleman
    Jun 29, 2026

    Used this sensor component in an industrial automation setup. Detection accuracy was consistent and installation was straightforward.

  • Emil***rperTech
    Jun 23, 2026

    Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.

  • Liam***terTech
    Jun 15, 2026

    Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

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IRFD120 Image

IRFD120

Vishay Siliconix
32D-IRFD120

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