Manufacturer Part Number
SI7478DP-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
This is a discrete semiconductor product, specifically a single MOSFET transistor.
Product Features and Performance
N-channel MOSFET with trench technology
60V drain-source voltage rating
15A continuous drain current at 25°C
5mΩ maximum on-resistance at 20A, 10V
160nC maximum gate charge at 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
High efficiency due to low on-resistance
Compact PowerPAK SO-8 surface mount package
Suitable for high-current switching applications
Key Technical Parameters
Drain-source voltage (Vdss): 60V
Gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 7.5mΩ @ 20A, 10V
Drain current (Id): 15A @ 25°C
Power dissipation (Pd): 1.9W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
This MOSFET is compatible with various high-current switching and power management applications.
Application Areas
Switch-mode power supplies
Motor drives
Voltage regulators
Battery management systems
Product Lifecycle
The SI7478DP-T1-E3 is an active product, and Vishay / Siliconix continues to manufacture and support it. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
Excellent efficiency and low power losses due to the low on-resistance
Compact and reliable PowerPAK SO-8 package
Wide operating temperature range for demanding applications
Suitable for high-current, high-power switching and power management designs
SI7483DP-T1-E3Electro-Films (EFI) / Vishay