Manufacturer Part Number
SIR826BDP-T1-RE3
Manufacturer
Vishay / Siliconix
Introduction
N-channel MOSFET transistor in PowerPAK SO-8 package
Product Features and Performance
Trench MOSFET technology
Low on-resistance
High current capability
High voltage rating
Fast switching speed
Low gate charge
Wide operating temperature range
Product Advantages
Efficient power conversion and control
Suitable for high-power applications
Reliable and robust performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 80V
Maximum Gate-Source Voltage (Vgs(max)): ±20V
On-resistance (Rds(on)): 5.1mΩ @ 15A, 10V
Continuous Drain Current (Id): 19.8A (Ta), 80.8A (Tc)
Input Capacitance (Ciss): 3030pF @ 40V
Power Dissipation: 5W (Ta), 83W (Tc)
Gate Charge (Qg): 69nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with wide operating temperature range
Compatibility
Surface mount package (PowerPAK SO-8)
Compatible with common PCB assembly processes
Application Areas
Power management circuits
Motor control
Switch-mode power supplies
Automotive electronics
Industrial equipment
Product Lifecycle
Currently in production
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High-performance and efficient power switching
Reliable and robust design for demanding applications
Ease of integration with standard PCB assembly processes
Wide operating temperature range for versatile use
Availability of replacement and upgrade options from the manufacturer
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