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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleSIS435DNT-T1-GE3
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SIS435DNT-T1-GE3 - Vishay Siliconix

Manufacturer Part Number
SIS435DNT-T1-GE3
Manufacturer
Vishay / Siliconix
Allelco Part Number
32D-SIS435DNT-T1-GE3
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
119,030 pcs available, New & Original
Parts Description
MOSFET P-CH 20V 30A PPAK1212-8
Package
PowerPAK® 1212-8
Data sheet
SIS435DNT-T1-GE.pdf

Datasheets

SIS435DNT.pdf
RoHs Status
ROHS3 Compliant
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In stock: 119030

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Specifications

SIS435DNT-T1-GE3 Tech Specifications
Vishay Siliconix - SIS435DNT-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix - SIS435DNT-T1-GE3

Product Attribute Attribute Value
Manufacturer Vishay / Siliconix
Vgs(th) (Max) @ Id 900mV @ 250µA
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
Supplier Device Package PowerPAK® 1212-8
Series TrenchFET®
Rds On (Max) @ Id, Vgs 5.4mOhm @ 13A, 4.5V
Power Dissipation (Max) 3.7W (Ta), 39W (Tc)
Package / Case PowerPAK® 1212-8
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 5700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 8 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Base Product Number SIS435

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99

Parts Introduction

Manufacturer Part Number

SIS435DNT-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

This is a discrete semiconductor product, specifically a P-channel MOSFET transistor.

Product Features and Performance

20V drain-source voltage

-55°C to 150°C operating temperature range

4mOhm maximum on-resistance at 13A, 4.5V

30A continuous drain current at 25°C case temperature

5700pF maximum input capacitance at 10V

7W maximum power dissipation at 25°C ambient, 39W at 25°C case temperature

180nC maximum gate charge at 8V

Product Advantages

Low on-resistance for high efficiency

Wide operating temperature range

High current handling capability

Small package size for compact designs

Key Technical Parameters

Voltage rating: 20V

On-resistance: 5.4mOhm

Drain current: 30A

Input capacitance: 5700pF

Power dissipation: 3.7W (ambient), 39W (case)

Quality and Safety Features

RoHS3 compliant

Packaged in PowerPAK 1212-8 surface mount package

Compatibility

Suitable for use in a variety of electronic circuits and applications

Application Areas

Suitable for use in power management, motor control, and other high-power electronic circuits

Product Lifecycle

Current product, no information on discontinuation or replacements

Several Key Reasons to Choose This Product

Low on-resistance for high efficiency

Wide operating temperature range

High current handling capability

Small package size for compact designs

RoHS3 compliance for environmental responsibility

Frequently Asked Questions(FAQ)

How does the SIS435DNT-T1-GE3 compare to other P-Channel MOSFETs in terms of Rds(on) at low gate drive voltages, and what design implications does this have for battery-powered systems?
The SIS435DNT-T1-GE3 exhibits an Rds(on) of 5.4 mΩ at Vgs = 4.5 V and Id = 13 A, which is notably lower than many competitive P-Channel devices in similar package sizes. This low on-resistance enables higher efficiency in power conversion stages, particularly beneficial in battery-operated applications where minimizing conduction losses directly extends operational runtime. Compared to alternatives with higher Rds(on), such as those requiring higher gate drive or offering larger resistance values, this component supports reduced thermal dissipation and improved system-level power density.
What are the key thermal performance characteristics of the SIS435DNT-T1-GE3 when operating at continuous drain current, and how should PCB layout influence heat dissipation strategy?
Under continuous operation at 30 A (Tc), the device achieves a total thermal resistance junction-to-case (RθJC) that allows for up to 39 W of power dissipation, indicating robust packaging integration. However, the ambient thermal resistance (RθJA) is 3.7°C/W, meaning without forced airflow, significant temperature rise occurs even at moderate currents. For designs exceeding 10 A, a solid copper pad and thermal vias under the PowerPAK® 1212-8 package are essential. Thermal simulations should assume at least 2 oz copper on inner layers and consider spreading heat across multiple planes to maintain junction temperatures below 125°C during sustained loads.
In high-frequency switching applications, how does the gate charge (Qg) of the SIS435DNT-T1-GE3 impact driver circuit requirements, and what trade-offs exist between switching speed and efficiency?
With a maximum gate charge (Qg) of 180 nC at Vgs = 8 V, the SIS435DNT-T1-GE3 requires substantial charging current from the gate driver, especially at frequencies above 1 MHz. This increases the complexity and power consumption of the gate drive stage. While lower Qg reduces switching losses and improves efficiency, this device balances low Rds(on) with moderate gate charge, making it suitable for medium-frequency buck converters or load switches rather than ultra-high-speed topologies. Designers must ensure the gate driver can deliver sufficient peak current—typically >2 A—to achieve reasonable turn-on times without excessive voltage overshoot.
Can the SIS435DNT-T1-GE3 be used in synchronous rectification, and if so, what control challenges arise due to its body diode characteristics?
Although primarily intended as a standard P-Channel MOSFET, the SIS435DNT-T1-GE3 can support synchronous rectification in certain bidirectional or reverse-current blocking configurations. However, its body diode has no explicit recovery time specification, implying relatively slow reverse recovery behavior. In high-efficiency synchronous designs, this may necessitate external Schottky diodes for freewheeling paths or careful dead-time management to avoid shoot-through. Its use in true synchronous rectification is limited compared to dedicated N-Channel devices optimized for such roles, but it remains viable in simpler topologies like ideal diodes or OR-ing circuits.
How does the threshold voltage (Vgs(th)) of the SIS435DNT-T1-GE3 affect compatibility with 3.3 V logic levels, and what gate drive considerations apply?
The maximum Vgs(th) is 900 mV at 250 µA, but typical values are significantly lower—often around 2–3 V. While this suggests partial turn-on at 3.3 V, full enhancement and minimal Rds(on) require Vgs closer to 4.5 V or higher. Driving the gate directly from a 3.3 V microcontroller without level shifting will result in increased conduction losses and reduced reliability over time. Therefore, a dedicated gate driver or a bootstrap circuit is recommended to achieve effective Vgs levels above 4.5 V, ensuring optimal performance and long-term stability.
What are the implications of the SIS435DNT-T1-GE3’s input capacitance (Ciss) on switching transient behavior and EMI in compact designs?
With Ciss(max) = 5700 pF at Vds = 10 V, the device presents significant capacitive loading to the driving circuitry, potentially causing ringing and electromagnetic interference (EMI) during fast transitions. This capacitance interacts with parasitic inductances in the gate path, possibly leading to oscillations unless properly damped with series resistance or snubber networks. Layout parasitics, particularly trace inductance, become critical above 500 kHz switching frequencies. Careful placement of decoupling capacitors near the gate pin and use of low-inductance paths help mitigate these effects and improve signal integrity.
When selecting between the SIS435DNT-T1-GE3 and alternative P-Channel MOSFETs with similar ratings, how should one evaluate trade-offs involving package size, thermal performance, and availability?
The PowerPAK® 1212-8 package offers a favorable footprint-to-power ratio, enabling higher current density than smaller packages like SC-70 or SOT-23, but smaller than TO-220 variants. Compared to surface-mount competitors, the SIS435DNT-T1-GE3 provides better thermal conductivity due to exposed copper pads, yet still relies on PCB copper area for heat spreading. Availability is generally stable given Vishay’s production continuity, but supply chain risks persist across all SMT components. Designers must balance board real estate against required thermal margin—choosing this part when both space and moderate power handling justify its footprint over larger but more thermally robust alternatives.
How does the moisture sensitivity level (MSL) rating of MSL 1 for the SIS435DNT-T1-GE3 inform handling and storage procedures in manufacturing environments?
Classified as MSL 1 (unlimited floor life under standard conditions), the SIS435DNT-T1-GE3 poses minimal risk during normal assembly processes without special precautions. It can remain unopened in ambient warehouse conditions indefinitely before soldering, simplifying inventory management. However, once the moisture barrier seal is compromised (during reels opened or trays exposed), it becomes vulnerable to moisture absorption, especially if stored above 30°C and 60% RH. Standard JEDEC J-STD-033 guidelines recommend baking only if humidity exposure exceeds thresholds, but proactive handling—such as using dry cabinets or nitrogen reflow ovens—can further reduce process-related defects.
What role does the TrenchFET® technology play in the performance profile of the SIS435DNT-T1-GE3, and how does it differentiate this device from planar MOSFET architectures?
The TrenchFET® process enables finer cell pitch and enhanced vertical current flow, resulting in lower Rds(on) for a given die size compared to traditional planar MOSFETs. This contributes directly to the SIS435DNT-T1-GE3’s ability to achieve 5.4 mΩ at Vgs = 4.5 V despite being in a small surface-mount package. Additionally, trench structures typically offer lower gate charge and reduced output capacitance, improving switching efficiency and robustness in high-frequency applications. These advantages make it preferable over older planar counterparts in modern power management designs seeking high efficiency within constrained form factors.
In automotive-grade applications, what additional validation beyond datasheet specifications would be necessary when integrating the SIS435DNT-T1-GE3 into a functional system?
Although not automotive-qualified by default, the SIS435DNT-T1-GE3 operates over a wide junction temperature range (-55°C to +150°C), aligning with AEC-Q101 requirements. However, formal qualification—including HALT, ESD testing per IEC 61000-4-2, and thermal cycling—would be needed before deployment in safety-critical automotive environments. Beyond electrical parameters, mechanical shock, vibration, and long-term solder joint reliability under thermal stress must be assessed. If used outside regulated domains, environmental robustness testing should still validate performance across expected operating profiles to avoid field failures.
How does the drain-to-source voltage rating (Vdss = 20 V) of the SIS435DNT-T1-GE3 constrain its application in systems with inductive kickback or transient overvoltages?
The 20 V Vdss limits safe operation to circuits where peak transient voltages remain below this threshold after accounting for derating margins. In inductive loads (e.g., motors, relays), energy stored in parasitic inductance can generate voltage spikes exceeding nominal supply rails. Without clamping diodes or snubbers, repeated exposure above 20 V may degrade the MOSFET over time. Thus, in systems with potential surges above 18 V, additional protection—such as TVS diodes or RC snubbers—is essential to prevent premature failure and ensure reliable operation.
What design considerations arise when paralleling multiple SIS435DNT-T1-GE3 devices to share higher currents, and how do gate drive imbalances affect overall system performance?
Paralleling MOSFETs can increase current capacity, but requires careful attention to gate drive symmetry, lead inductance, and thermal coupling. Since the SIS435DNT-T1-GE3 has low Rds(on), slight mismatches in Vgs due to trace length differences can cause uneven current sharing, leading to localized heating and potential device failure. To mitigate, use Kelvin connections, matched gate resistors, and ensure identical PCB layout for each unit. Thermal proximity also helps stabilize junction temperatures. While feasible in niche high-current applications, single-device solutions often prove more reliable unless absolutely necessary due to cost or space constraints.
How does the RoHS compliance status of the SIS435DNT-T1-GE3 influence material selection decisions in global product certification strategies?
As RoHS3 compliant, the SIS435DNT-T1-GE3 adheres to European Union restrictions on hazardous substances including lead, mercury, cadmium, and certain brominated flame retardants. This simplifies regulatory approval for export into RoHS-regulated markets. However, full REACH compliance requires verification of SVHC content, which may involve supplier disclosure. Using such components supports harmonized global certifications without requiring redesigns, reducing time-to-market and compliance overhead in consumer electronics, industrial controls, and telecom equipment.
What impact does the package height (implied by PowerPAK® 1212-8) have on high-density PCB stacking and connector compatibility in modular systems?
The low-profile nature of the PowerPAK® 1212-8 enables dense layer stacking in compact modules, facilitating miniaturization in handheld or embedded devices. However, during automated assembly, taller connectors or adjacent components must allow sufficient clearance to avoid tombstoning or placement interference. In z-axis-limited designs, this package is advantageous over bulkier alternatives. Still, mechanical constraints such as socket compatibility or heatsink attachment must be validated early in the enclosure design phase to avoid integration conflicts.
In battery backup or power path applications, how does the SIS435DNT-T1-GE3’s performance compare to N-Channel equivalents when used as ideal diodes?
When configured as an ideal diode (source connected to load), the SIS435DNT-T1-GE3 experiences higher effective Vgs due to forward bias requirements, increasing Rds(on) slightly compared to N-Channel devices driven from a negative rail. However, its P-Channel topology eliminates the need for a negative supply, simplifying control logic. Efficiency losses are offset by reduced component count. For low-voltage systems (e.g., 3.3 V Li-ion backups), this trade-off favors simplicity and cost, provided the increased Rds(on) remains acceptable relative to load current.
What precautions are recommended when probing or testing the SIS435DNT-T1-GE3 in-circuit to avoid damaging the gate oxide during characterization?
The gate oxide is sensitive to electrostatic discharge (ESD) and high-impedance voltage buildup. Always use grounded probes, anti-static wrist straps, and ESD-safe workstations. Avoid floating inputs; connect unused pins to appropriate rails (e.g., Vdd or GND). When measuring dynamic waveforms, ensure oscilloscope grounding does not create ground loops that induce transients. Use low-capacitance probes (<15 pF) to minimize loading and prevent unintended turn-on due to capacitive coupling through stray fields.
How does the continuous drain current rating (30 A @ Tc) translate into practical current limits for PCB trace and copper weight design, assuming natural convection cooling?
At 30 A, even with the device’s 39 W Tc capability, internal power dissipation generates significant heat that must be conducted through the package to the PCB. Assuming a worst-case scenario of 2 W loss, the required copper area depends on trace width and layer count. For a single-layer board with 1 oz copper, traces wider than 8 mm may be needed to avoid excessive temperature rise. Multilayer boards with 2 oz inner layers and thermal vias drastically reduce thermal resistance. Rule-of-thumb calculations suggest minimum 12 mm² copper area under the device for stable operation without active cooling.
Why might a designer choose the SIS435DNT-T1-GE3 over integrated solutions like load switches with built-in drivers, despite higher bill-of-materials costs?
While dedicated ICs simplify layout and include protections, discrete solutions like the SIS435DNT-T1-GE3 offer superior flexibility, higher current capability, and easier customization of external control signals. In prototyping or low-volume designs, avoiding BOM complexity accelerates iteration. Additionally, when interfacing with non-standard logic levels or requiring custom timing, discrete implementation avoids vendor lock-in. The SIS435DNT-T1-GE3 provides a balanced alternative where performance, scalability, and design autonomy outweigh the convenience of monolithic integration.

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay Siliconix SIS435DNT-T1-GE3

Product Attribute SIS439DNT-T1-GE3 SIS434DN-T1-GE3 SIS436DN-T1-GE3 SIS438DN-T1-GE3
Part Number SIS439DNT-T1-GE3 SIS434DN-T1-GE3 SIS436DN-T1-GE3 SIS438DN-T1-GE3
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Base Product Number - DAC34H84 MAX500 ADS62P42
Series - - - -
Power Dissipation (Max) - - - -
Gate Charge (Qg) (Max) @ Vgs - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Vgs (Max) - - - -
Drive Voltage (Max Rds On, Min Rds On) - - - -
Vgs(th) (Max) @ Id - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
FET Feature - - - -
Rds On (Max) @ Id, Vgs - - - -
Current - Continuous Drain (Id) @ 25°C - - - -
Drain to Source Voltage (Vdss) - - - -
Input Capacitance (Ciss) (Max) @ Vds - - - -
FET Type - - - -
Technology - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Mounting Type - Surface Mount Through Hole Surface Mount

SIS435DNT-T1-GE3 Datasheet PDF

Download SIS435DNT-T1-GE3 pdf datasheets and Vishay Siliconix documentation for SIS435DNT-T1-GE3 - Vishay Siliconix.

Datasheets
SIS435DNT.pdf
PCN Assembly/Origin
Multiple Fabracation Changes09/Jul/2014.pdf

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Customer Reviews

Evaluation: 10 Articles

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

  • Oliv***arris
    May 7, 2026

    Reliable I/O expander. Works well in embedded control applications.

  • Jess***Jones
    Apr 17, 2026

    It offers good value for the price, and the specifications match the description. I’ve been using it for two days with no issues, and I’ll definitely buy it again if I need it in the future.

  • Mich***Smith
    Apr 17, 2026

    Shipping was on time, the component pins are neatly aligned, and I tested 10 of them with a multimeter—all readings were within the specified range. Highly recommended.

  • Aman***arris
    Apr 3, 2026

    It was great—the entire process, from placing the order to receiving the package, went very smoothly. The components were consistent, the price was fair, and I had a very pleasant shopping experience.

  • Mike***nch
    Apr 3, 2026

    Better than expected! The resistance and capacitance readings were spot-on, and it passed the test on the first try. The service was reliable, and the packaging was thoughtful—I highly recommend it.

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Brazil 7
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DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
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Vishay Siliconix

SIS435DNT-T1-GE3

Vishay Siliconix
32D-SIS435DNT-T1-GE3

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