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Home Products Resistors Chip Resistor - Surface Mount~~9T06031A82R5DBHFT~~

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9T06031A82R5DBHFT - YAGEO

Manufacturer Part Number: 9T06031A82R5DBHFT

Manufacturer: Yageo

Allelco Part Number: 98D-9T06031A82R5DBHFT

Warranty: 1 Year Allelco Warranty - Find out more

Stock Status:: 600,309 pcs available, New & Original

Parts Description: RES SMD 82.5 OHM 0.5% 1/10W 0603

Package: 0603

Data sheet: 9T06031A82R5DBH.pdf

Datasheets
Product Selection Guide.pdf

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In stock: 600309

Specifications

9T06031A82R5DBHFT Tech Specifications
YAGEO - 9T06031A82R5DBHFT technical specifications, attributes, parameters and parts with similar specifications to YAGEO - 9T06031A82R5DBHFT

Product Attribute	Attribute Value
Manufacturer	Yageo
Tolerance	±0.5%
Temperature Coefficient	±100ppm/°C
Supplier Device Package	0603
Size / Dimension	0.063" L x 0.031" W (1.60mm x 0.80mm)
Series	RT
Resistance	82.5 Ohms
Power (Watts)	0.1W, 1/10W

Product Attribute	Attribute Value
Package / Case	0603 (1608 Metric)
Package	Tape & Reel (TR)
Operating Temperature	-55°C ~ 155°C
Number of Terminations	2
Height - Seated (Max)	0.022" (0.55mm)
Features	-
Failure Rate	-
Composition	Thin Film

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
RoHs Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8533.21.0030

Frequently Asked Questions(FAQ)

What are the thermal stability characteristics of the 9T06031A82R5DBHFT, and how does its ±100ppm/°C temperature coefficient affect circuit performance across the -55°C to 155°C operating range?: The 9T06031A82R5DBHFT exhibits a temperature coefficient of ±100ppm/°C, which translates to a maximum resistance drift of approximately ±0.825 ohms across its full -55°C to 155°C operating window. This specification is typical for thin-film chip resistors in the 0603 package and indicates moderate thermal stability. In a 100°C temperature swing, the 9T06031A82R5DBHFT could shift by roughly 0.6–0.8% from its nominal 82.5-ohm value. For precision analog circuits, impedance matching networks, or feedback networks requiring tight tolerance maintenance, this drift should be evaluated against circuit noise margins and gain stability requirements. Applications in industrial or automotive environments with wide temperature excursions will experience measurable resistance changes with the 9T06031A82R5DBHFT that may require compensation or derating strategies.

How does the 9T06031A82R5DBHFT compare to standard carbon-film resistors in terms of accuracy and noise performance in signal conditioning applications?: The 9T06031A82R5DBHFT is a thin-film resistor with ±0.5% tolerance, positioning it substantially ahead of typical carbon-film resistors (often ±5% or worse) in both initial accuracy and long-term stability. Thin-film technology, as used in the 9T06031A82R5DBHFT, deposits a resistive material onto a ceramic substrate and laser-trims the value, resulting in lower noise density and superior frequency response compared to carbon-film construction. For low-noise transimpedance amplifier stages, precision current-sensing circuits, or analog-to-digital converter input networks, the 9T06031A82R5DBHFT's thin-film construction delivers measurably lower 1/f noise and better high-frequency behavior. The ±0.5% tolerance of the 9T06031A82R5DBHFT also reduces production yield loss in tightly specified circuits versus carbon-film alternatives.

Is the 9T06031A82R5DBHFT suitable for RF and microwave impedance matching networks, and what parasitic considerations apply at higher frequencies?: The 9T06031A82R5DBHFT can function in RF impedance networks up to several hundred megahertz, though parasitic effects become relevant above approximately 500 MHz. In the 0603 package, the 9T06031A82R5DBHFT exhibits inherent inductance (typically 0.3–0.6 nH) and capacitance (0.1–0.3 pF) that begin to dominate impedance behavior at microwave frequencies. For applications below 200 MHz, such as cellular band matching or IF stages, the 9T06031A82R5DBHFT performs reliably with minimal correction. Above 1 GHz, the parasitic inductance of the 9T06031A82R5DBHFT becomes the limiting factor and may require physical layout optimization or alternative geometries (thin-film networks or distributed components). The ±0.5% tolerance of the 9T06031A82R5DBHFT also ensures predictable impedance in production, supporting yield in precision matching applications.

What is the actual power dissipation limit of the 9T06031A82R5DBHFT under continuous operation, and how does package size constrain thermal management?: The 9T06031A82R5DBHFT is rated for 0.1W continuous dissipation, which corresponds to approximately 2.9 mA at 82.5 ohms. The 0603 (1.6 mm × 0.8 mm) package imposes inherent thermal constraints; junction-to-ambient thermal resistance is typically 400–600 K/W depending on PCB copper area and layer configuration. In practice, the 9T06031A82R5DBHFT can sustain rated power only when mounted on a PCB with substantial ground planes and reasonable ambient temperature (≤70°C). Transient overload (such as ESD pulses or surge conditions) may allow brief excursions above 0.1W if energy is limited. For continuous operation approaching 0.1W in confined environments (multilayer boards without thermal vias), the 9T06031A82R5DBHFT will experience junction temperature rise of 40–60°C above ambient, requiring design margin against the 155°C upper limit. In high-density digital boards with limited copper, derating to 50–70 mW is prudent.

How does the 9T06031A82R5DBHFT's thin-film construction compare to thick-film resistors in terms of frequency response and suitability for broadband applications?: Thin-film resistors, including the 9T06031A82R5DBHFT, exhibit superior frequency response compared to thick-film designs due to lower parasitic inductance and more uniform current distribution within the resistive element. The 9T06031A82R5DBHFT maintains stable impedance across audio frequencies and extends reliably into the megahertz range with minimal resonance. Thick-film resistors typically show impedance peaking in the 100 MHz to 1 GHz band due to higher series inductance. For wideband transimpedance amplifiers, distributed feedback networks, and broadband noise sources, the 9T06031A82R5DBHFT's thin-film technology delivers flatter frequency response and lower Q in parasitic circuits. The 9T06031A82R5DBHFT is therefore preferred over thick-film alternatives in high-speed data acquisition, RF detector circuits, and precision oscillator networks where impedance stability across a wide frequency span is required.

What reflow soldering profile parameters are optimal for the 9T06031A82R5DBHFT, and are there known failure modes associated with improper thermal cycling?: The 9T06031A82R5DBHFT, with MSL 1 (unlimited moisture sensitivity), tolerates standard lead-free reflow profiles without special moisture baking. Peak reflow temperature should remain below 260°C for approximately 30 seconds to avoid substrate cracking in the 0603 package. Thermal cycling failures in the 9T06031A82R5DBHFT are rare at rated power levels but may occur when the component experiences sustained high junction temperatures (>120°C) combined with rapid temperature transients (ΔT > 50°C/minute). Solder joint fatigue is the primary failure mode, particularly on components near board edges or in boards with significant coefficient-of-thermal-expansion mismatch. Underfill or conformal coating can extend reliability of the 9T06031A82R5DBHFT in aerospace or automotive environments. The 9T06031A82R5DBHFT's thin-film construction does not exhibit the cracking vulnerability sometimes seen in thick-film designs under thermal shock.

How does the 9T06031A82R5DBHFT's ±0.5% tolerance compare in cost-effectiveness to 1% tolerance alternatives for precision filtering and gain-setting applications?: The 9T06031A82R5DBHFT at ±0.5% tolerance typically costs 15–25% more than ±1% alternatives from the same manufacturer, but this premium is often recovered through reduced production trimming, lower yield loss, and improved circuit performance consistency. In active filter designs where pole frequency depends on resistor ratios, the 9T06031A82R5DBHFT reduces the need for post-production frequency calibration or laser trimming. For precision transimpedance amplifier gain stages, the ±0.5% tolerance of the 9T06031A82R5DBHFT ensures gain variation within ±0.5% without selection binning, reducing inventory complexity. In high-volume applications (>100,000 units/year), the 9T06031A82R5DBHFT's tighter tolerance and inherent stability often justify the component cost through simplified supply chain and manufacturing processes. For applications with looser specifications or where performance variation can be accommodated through feedback, ±1% alternatives may offer better cost performance.

What are the long-term stability and aging characteristics of the 9T06031A82R5DBHFT over 10+ years of storage or operation?: Thin-film resistors such as the 9T06031A82R5DBHFT exhibit excellent long-term stability, with typical drift rates of 50–100 ppm over 10 years of continuous operation at rated power and moderate temperature. The 9T06031A82R5DBHFT's laser-trimmed construction eliminates the aging mechanisms present in wire-wound or carbon-composition designs. Storage without power causes minimal drift; the 9T06031A82R5DBHFT will typically shift <±50 ppm even after 15–20 years in dry storage. Accelerated life testing of the 9T06031A82R5DBHFT at elevated temperature (125°C for 1000 hours) typically shows drift <±0.2%, well within the ±0.5% tolerance band. Humidity exposure has negligible effect on the 9T06031A82R5DBHFT due to its MSL 1 rating and passivated thin-film construction. Applications requiring multi-decade stability, such as precision weighing systems or long-term environmental monitoring, can rely on the 9T06031A82R5DBHFT without periodic recalibration.

Can the 9T06031A82R5DBHFT be safely used in high-impedance bias networks or precision photodiode transimpedance stages without performance degradation?: Yes, the 9T06031A82R5DBHFT is well-suited for precision photodiode transimpedance amplifiers and high-impedance bias networks. The thin-film construction of the 9T06031A82R5DBHFT ensures low leakage current and stable impedance, critical for transimpedance circuits where bias current noise couples directly to output. The 9T06031A82R5DBHFT's 82.5-ohm value is common in photodiode feedback networks for moderate transimpedance gains (10 kΩ to 100 kΩ total). Leakage current in the 9T06031A82R5DBHFT is typically <1 pA at 25°C and increases gradually with temperature. In bias networks where the 9T06031A82R5DBHFT serves as a pullup or pulldown resistor to precision comparators or precision ADC reference dividers, the ±0.5% tolerance minimizes reference error propagation. The low temperature coefficient of the 9T06031A82R5DBHFT (±100 ppm/°C) ensures stable bias current over environmental temperature changes.

How does the 9T06031A82R5DBHFT perform in pulse or transient conditions, and what peak current handling can be expected without permanent degradation?: The 9T06031A82R5DBHFT can safely handle brief current pulses several times the continuous rating without permanent resistance shift, provided energy is limited and dwell time is short. Peak currents up to approximately 500 mA (100× continuous rating) for microsecond-scale pulses fall within the 9T06031A82R5DBHFT's elastic deformation range. ESD events (nanosecond transients with energies <1 µJ) produce negligible permanent change in the 9T06031A82R5DBHFT. Sustained overcurrent lasting >100 milliseconds risks thin-film degradation and permanent resistance drift in the 9T06031A82R5DBHFT. Repetitive pulse conditions at 50% duty cycle can extend safe operation of the 9T06031A82R5DBHFT to approximately 200 mW average power without aging. The 9T06031A82R5DBHFT exhibits good tolerance to fault conditions common in digital circuits (logic signal transients, supply switching noise), making it reliable in systems lacking active protection. Worst-case failure in the 9T06031A82R5DBHFT under extreme transient stress is open-circuit, not short-circuit.

What are the practical considerations for using the 9T06031A82R5DBHFT in precision current-sensing applications, and how do its characteristics compare to specialized current-sense resistor designs?: The 9T06031A82R5DBHFT can function as a current-sense resistor for applications requiring moderate accuracy (±0.5% initial tolerance) and low noise. Dedicated current-sense resistors typically offer additional features such as matched temperature coefficients across resistance ratios and four-terminal (Kelvin) sensing to eliminate lead inductance; the 9T06031A82R5DBHFT is a two-terminal component. For shunt current-sensing in battery management systems, motor control, or load monitoring circuits operating at sensed currents of 100 mA to 1 A, the 9T06031A82R5DBHFT provides adequate performance with ±0.5% initial accuracy and predictable temperature drift. The 9T06031A82R5DBHFT's inherent series inductance (0.3–0.6 nH) becomes problematic only at switching frequencies >10 MHz; below this, it contributes negligible noise to sense signals. For precision applications where the 9T06031A82R5DBHFT is used in current-feedback topologies, its thin-film construction ensures low 1/f noise in the sense output.

Are there known compatibility issues or design pitfalls when integrating the 9T06031A82R5DBHFT into analog mixed-signal boards with digital switching circuits?: The 9T06031A82R5DBHFT exhibits good resilience to digital switching noise and electromagnetic interference typical of mixed-signal boards. However, several design practices optimize performance: (1) the 9T06031A82R5DBHFT should not be routed directly above high-speed digital return paths without intervening ground plane, as capacitive coupling can inject switching noise; (2) when the 9T06031A82R5DBHFT serves a precision analog stage, its traces should maintain >2 mm spacing from high-di/dt signal lines to minimize crosstalk; (3) the 9T06031A82R5DBHFT's small 0603 package makes it vulnerable to accidental tombstoning if reflow profiles are inadequately controlled on high-speed stencil print cycles. Thermal gradients from nearby power dissipation (particularly high-current switching nodes) can cause local heating of the 9T06031A82R5DBHFT and measurable resistance drift if the component is positioned within 3 mm of high-power components without thermal isolation. The 9T06031A82R5DBHFT itself does not generate EMI and integrates smoothly into analog signal chains when substrate layout principles are observed.

Parts with Similar Specifications

The three parts on the right have similar specifications to YAGEO 9T06031A82R5DBHFT

Product Attribute
Part Number	9T06031A82R5BAHFT	9T06031A82R0DBHFT	9T06031A82R5DAHFT	9T06031A82R5CBHFT
Manufacturer	YAGEO	YAGEO	YAGEO	YAGEO
Power (Watts)	-	-	-	-
Tolerance	-	-	-	-
Series	-	-	-	-
Package / Case	-	196-LFBGA	16-DIP (0.300', 7.62mm)	64-VFQFN Exposed Pad
Operating Temperature	-	-40°C ~ 85°C	0°C ~ 70°C	-40°C ~ 85°C
Failure Rate	-	-	-	-
Supplier Device Package	-	196-NFBGA (12x12)	16-PDIP	64-VQFN (9x9)
Size / Dimension	-	-	-	-
Resistance	-	-	-	-
Composition	-	-	-	-
Temperature Coefficient	-	-	-	-
Package	-	Tape & Reel (TR)	Tube	Tape & Reel (TR)
Height - Seated (Max)	-	-	-	-
Features	-	-	-	Simultaneous Sampling
Number of Terminations	-	-	-	-

9T06031A82R5DBHFT Datasheet PDF

Download 9T06031A82R5DBHFT pdf datasheets and YAGEO documentation for 9T06031A82R5DBHFT - YAGEO.

Datasheets: Product Selection Guide.pdf

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