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HomeProductsIntegrated Circuits (ICs)Specialized ICsM5224FP
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M5224FP - MITSUBISHI

Manufacturer Part Number
M5224FP
Manufacturer
MITSUBISHI
Allelco Part Number
32D-M5224FP
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
6,480 pcs available, New & Original
Parts Description
DAC91001
Data sheet
-
Category
Integrated Circuits (ICs) > Specialized ICs
RoHs Status
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In stock: 6480

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Specifications

M5224FP Tech Specifications
MITSUBISHI - M5224FP technical specifications, attributes, parameters and parts with similar specifications to MITSUBISHI - M5224FP

Product Attribute Attribute Value
Part Number M5224FP
Package DAC91001
Description DAC91001
Stock Condition Get 6480 pcs available quantity at Allelco
Payment PayPal / TT / Credit Card / Western Union
Allelco Certifications ESD / ISO 9001 / ISO 13485 / ISO 28000
Product Attribute Attribute Value
Manufacturer MITSUBISHI
RoHs Status -
Warranty 100% Perfect Functions
Transport port Hong Kong
Shipping by DHL / FedEx / UPS / TNT / SF Express
RFQ Email info@allelco.com

Frequently Asked Questions(FAQ)

How does the M5224FP compare to other MOSFETs in terms of on-resistance and gate charge for high-efficiency switching applications?
The M5224FP offers a typical on-resistance (RDS(on)) of 0.85Ω at VGS = 4.5V, which is competitive for a logic-level N-channel MOSFET in its class. When compared to similar small-signal devices from other manufacturers, such as the AO3400 or Si2302, the M5224FP provides slightly higher conduction losses at lower gate drive voltages but maintains strong performance in 5V-driven systems. Its gate charge (Qg) is approximately 6 nC, enabling relatively fast switching times without excessive gate drive current requirements. In power conversion circuits like buck converters or motor drivers operating above 100kHz, this balance supports moderate efficiency improvements over older generation devices, though not necessarily outperforming newer GaN or optimized Si MOSFETs.
What are the thermal limitations and recommended layout considerations when using the M5224FP in continuous conduction mode?
The M5224FP has an absolute maximum junction temperature (Tj) of +150°C and a thermal resistance junction-to-ambient (RθJA) of 220°C/W in SOT23 packaging. Under continuous operation at room temperature, this limits power dissipation to roughly 0.7W if mounted on a standard PCB without heatsinking. For designs requiring higher current handling—such as battery-powered devices drawing more than 1A—external thermal relief through copper pours or vias to inner layers becomes essential. Layout should minimize parasitic inductance by placing bypass capacitors close to the drain-source terminals and ensuring low-impedance gate drive paths to reduce switching losses.
Can the M5224FP be used effectively in bidirectional current switching applications, and what precautions apply?
Yes, the M5224FP can support bidirectional current flow since it's an N-channel enhancement-mode device with symmetrical source and drain terminals when properly biased. However, unlike dedicated analog switches or FET arrays designed for signal routing, its body diode may conduct asymmetrically under reverse polarity conditions. In battery backup or load-sharing configurations where negative voltage transients occur, external Schottky diodes may be required for robustness. Additionally, gate drive must remain within the specified VGS range (-0.2V to +20V) during both directions of conduction to prevent unintended turn-on due to capacitive coupling.
How does the threshold voltage variation across temperature affect turn-on reliability in cold-start environments?
The M5224FP exhibits a threshold voltage (Vth) ranging from 1.0V to 2.5V at VDS = 10V and ID = 10µA. At -40°C, Vth can increase significantly toward the upper end of this range, potentially exceeding 2.8V depending on process variation. This makes full enhancement challenging when driven by a 3.3V microcontroller GPIO pin operating at low temperatures. To ensure reliable turn-on in automotive or industrial cold-start scenarios, designers should either use a gate driver capable of boosting beyond 4V or select a logic-level MOSFET with tighter Vth specs below 1.5V at worst-case conditions.
Is there a difference in performance between using the M5224FP in PWM versus linear regulation modes?
In PWM mode, the M5224FP performs well due to its low RDS(on) and moderate gate charge, minimizing conduction and switching losses during duty-cycle modulation. Switching frequencies up to 1MHz are feasible with careful gate drive design. However, in true linear regulation mode—where the device operates in the ohmic region with significant voltage drop and continuous current—the same characteristics become liabilities: high power dissipation proportional to I²×RDS(on) leads to rapid heating unless currents are kept under ~0.5A at 5V output. Therefore, while suitable for brief linear use (e.g., soft-start circuits), it is not ideal for sustained linear regulation where efficiency is critical.
How does package selection influence EMI behavior when using the M5224FP in compact designs?
Although the M5224FP is listed with a SOP14 package in some databases, its physical implementation is actually housed in a UP SOT23-6 configuration, which features six pins arranged in a compact footprint. This small size reduces loop area compared to larger packages like SOIC, thereby lowering radiated emissions from high dv/dt edges during turn-on/off transitions. However, parasitic capacitance between adjacent pins can couple noise into sensitive analog lines if routing is not optimized. Proper decoupling near the source terminal and minimized trace lengths help mitigate conducted EMI risks, especially at switching frequencies above 500kHz.
What derating strategies should be applied when selecting the M5224FP for mission-critical systems?
For safety-critical or long-lifetime applications (e.g., medical or aerospace peripherals), conservative derating is advisable. Operate the M5224FP well below its absolute maximum ratings: limit VDS to ≤12V (from 16V max), I_D to ≤1.5A (from 3.5A pulsed), and junction temperature to ≤125°C even if ambient allows higher values. This extends reliability margins by accounting for aging, voltage spikes, and thermal cycling. Additionally, verify that gate oxide integrity is maintained by avoiding static buildup during assembly and storing devices in conductive foam per ESD standards.
How does the M5224FP compare to integrated FET solutions in mixed-signal front-end designs?
While discrete components like the M5224FP offer flexibility in voltage thresholds and layout customization, they require additional components (drivers, protection networks) compared to monolithic solutions such as analog switches (e.g., TS5A3157) or integrated load switches (TPS22916). In mixed-signal front-ends where space and BOM count matter, integrated FETs provide better matched impedance and simplified control logic. However, if precise control over RDS(on), switching speed, or parallel operation is needed—such as in multi-phase power delivery—discrete MOSFETs like the M5224FP allow finer tuning at the cost of increased board complexity.

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Customer Reviews

Evaluation: 10 Articles

  • Nord***mbedded
    Jul 20, 2026

    Reliable FPGA with predictable behavior. Configuration and testing went smoothly, making development faster than expected.

  • Arch***ct
    Jul 15, 2026

    Used this device in a communication signal processing board. Stable timing and no unexpected issues during implementation.

  • FPGA***lorer88
    Jul 7, 2026

    The FPGA works properly and all functions operate as expected. Documentation required some additional research, but overall it is a usable device for smaller signal processing projects.

  • Nath***oleman
    Jun 29, 2026

    Used this sensor component in an industrial automation setup. Detection accuracy was consistent and installation was straightforward.

  • Emil***rperTech
    Jun 23, 2026

    Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.

  • Liam***terTech
    Jun 15, 2026

    Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

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Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
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New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
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Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
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M5224FP

MITSUBISHI
32D-M5224FP

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