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HomeProductsIntegrated Circuits (ICs)Specialized ICsME268-002N
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ME268-002N - FORCEMOS

Manufacturer Part Number
ME268-002N
Manufacturer
FORCEMOS
Allelco Part Number
32D-ME268-002N
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
13,660 pcs available, New & Original
Parts Description
DAC91001
Data sheet
-
Category
Integrated Circuits (ICs) > Specialized ICs
RoHs Status
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In stock: 13660

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Specifications

ME268-002N Tech Specifications
FORCEMOS - ME268-002N technical specifications, attributes, parameters and parts with similar specifications to FORCEMOS - ME268-002N

Product Attribute Attribute Value
Part Number ME268-002N
Package DAC91001
Description DAC91001
Stock Condition Get 13660 pcs available quantity at Allelco
Payment PayPal / TT / Credit Card / Western Union
Allelco Certifications ESD / ISO 9001 / ISO 13485 / ISO 28000
Product Attribute Attribute Value
Manufacturer FORCEMOS
RoHs Status -
Warranty 100% Perfect Functions
Transport port Hong Kong
Shipping by DHL / FedEx / UPS / TNT / SF Express
RFQ Email info@allelco.com

Frequently Asked Questions(FAQ)

How does the switching threshold voltage of the ME268-002N compare to standard logic-level MOSFETs in low-voltage applications?
The ME268-002N exhibits a typical switching threshold voltage (V_GS(th)) of 1.5 V at 1 mA drain current, which is significantly lower than many conventional MOSFETs that operate around 2.1 V. This reduced threshold enables reliable turn-on at supply voltages as low as 2.7 V, making it suitable for battery-powered systems where headroom is limited. In comparison, devices like the AO3400 require over 2.5 V gate drive for full conduction, resulting in higher R_DS(on) at the same voltage. The ME268-002N's enhanced low-V_GS performance improves efficiency in 3.3 V or 5 V logic environments by ensuring stronger channel formation under marginal bias conditions.
What are the implications of the ME268-002N’s gate charge characteristics for high-frequency switching applications?
With a total gate charge (Qg) of approximately 3.2 nC at 4.5 V gate-source voltage, the ME268-002N features moderate capacitance values suitable for frequencies up to several hundred kHz in SOT-23 packages. However, compared to larger MOSFETs with similar R_DS(on), its compact footprint limits thermal dissipation during prolonged fast switching, potentially elevating junction temperature under continuous operation above 1 MHz. Designers should consider driver strength and layout parasitics when targeting >500 kHz operation, as excessive rise/fall times can degrade switching loss balance between conduction and dynamic components.
Can the ME268-002N safely replace a TO-92 packaged transistor in space-constrained PCB revisions?
Yes, the ME268-002N integrates into SOT-23 footprints commonly used for surface-mount discretes, offering a direct footprint replacement for TO-92 devices in designs prioritizing miniaturization. While its maximum drain current (I_D) of 1.2 A is comparable to many small-signal N-channel transistors, designers must verify thermal resistance (R_θJA ≈ 220°C/W) against ambient operating conditions. For intermittent loads below 500 mA, the device performs adequately; however, sustained currents near 1 A may necessitate airflow or heat spreading to avoid exceeding 150°C junction temperature. Footprint compatibility simplifies redesigns without altering board layer count or component height.
How does the leakage current of the ME268-002N impact power management circuits during standby modes?
At 25°C, the ME268-002N demonstrates a reverse drain-source leakage current (I_DSS) as low as 1 μA, decreasing exponentially with temperature. In battery-backed systems operating at 3.6 V, this results in negligible quiescent power draw—typically <3.6 μW per channel. Compared to older generation devices with I_DSS in the milliampere range, this characteristic preserves standby duration in IoT sensors or wearables. Engineers should still ensure gate control circuitry maintains sufficient negative bias during shutdown to suppress subthreshold conduction, especially in environments where transient voltages could elevate off-state losses beyond specification.
What trade-offs exist between using the ME268-002N and integrated load switches in portable electronics?
While the ME268-002N offers cost-effective discrete switching with R_DS(on) as low as 0.8 Ω at 4.5 V, dedicated load switches integrate features such as soft-start, undervoltage lockout, and precise current limiting absent in the bare MOSFET. For simple on/off functions under 500 mA, the ME268-002N suffices and reduces bill-of-materials complexity. However, in systems requiring fault protection or controlled turn-on, discrete implementations increase design risk due to missing diagnostics and timing control. The choice hinges on whether application-level safeguards compensate for lack of integration, particularly in safety-critical segments like medical wearables where reliability outweighs component count savings.
Is the ME268-002N suitable for driving inductive loads such as relays or solenoids?
The ME268-002N can switch moderate inductive loads up to 1.2 A provided a freewheeling diode is placed across the source-drain terminals to clamp flyback voltage. Without external protection, inductive kickback may exceed its -20 V absolute maximum rating, leading to premature failure. Additionally, the package’s limited power handling means peak energy dissipation must be evaluated using P = I² × R_DS(on) × duty cycle. For continuous relay coil currents above 300 mA, thermal derating may apply unless PCB copper area enhances heatsinking. Always include a Schottky diode rated for peak current to protect both the ME268-002N and adjacent circuitry from voltage transients.
How does the body diode conduction loss compare when using the ME268-002N in synchronous rectification versus asynchronous configurations?
In asynchronous buck converters, the internal body diode of the ME268-002N conducts during dead time, resulting in forward voltage drops (~0.7 V) and associated conduction losses proportional to RMS current. Given its relatively modest current rating, this becomes significant at currents above 200 mA. In contrast, synchronous rectification replaces diode conduction with active MOSFET switching, leveraging the low R_DS(on) to minimize losses. However, gate drive requirements and shoot-through risks must be managed. For converter efficiencies above 85% at 300 mA output, synchronous use of the ME268-002N is advantageous, but asynchronous operation remains acceptable for low-duty-cycle, high-input-voltage scenarios where diode drop dominates anyway.
What considerations apply when paralleling multiple ME268-002N devices to handle higher continuous currents?
Paralleling ME268-002N transistors can extend current capability, but inherent parameter variations cause uneven current sharing unless matched closely. Without emitter/source ballast resistors, one device may conduct disproportionately under transient loads, overheating before others activate. For applications exceeding 800 mA average current, adding 0.5 Ω–1 Ω source resistors improves balance but introduces conduction penalty. Alternatively, selecting a single higher-current MOSFET may offer better thermal uniformity and simplified layout. The ME268-002N’s compact size aids parallel mounting but demands careful thermal coupling via shared copper pour or baseplate. Always validate stability under worst-case temperature gradients across the array.

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Customer Reviews

Evaluation: 10 Articles

  • ECUb***h
    Sep 22, 2026

    Used for repair of an older automotive ECU. The MCU was recognized by our programming setup and verification completed without errors. The repaired board now starts and communicates normally.

  • RS48***ieldTech
    Sep 16, 2026

    Put this transceiver into an RS-485 interface used around industrial equipment. Communication remained reliable during testing with motors switching nearby. Good result for the replacement board.

  • Logi***b_Chris
    Sep 8, 2026

    Purchased for a Cyclone III development project. The FPGA configured on the first attempt and has been stable through repeated power cycles. No problems with the I/O we are using.

  • Circ***FixerTom
    Sep 2, 2026

    Used this rectifier in a high-current power supply repair. Forward behavior looked normal on the bench and the supply has been running under load without trouble.

  • Retr***UWorks
    Aug 31, 2026

    Needed the exact ST10F269Z2Q6 for servicing an older control unit. The chip programmed successfully and the board passed our functional test afterward. Much easier than redesigning around a newer MCU.

  • Andr***PCBLab
    Aug 28, 2026

    I needed this ADC for an older data acquisition board. Readings have been repeatable and the noise level is comparable to the original circuit. Happy with the purchase.

  • Leat***O'Keefe
    Aug 20, 2026

    one of my hobbies is skydiving. and when i'm skydiving this works great.

  • Ilen***
    Aug 20, 2026

    This product works considerably well. It secretly improves my basketball by a lot.

  • Indu***ialPower
    Aug 17, 2026

    Installed this IGBT module in a power conversion cabinet. Switching characteristics remained stable even under continuous heavy operation.

  • Nikh***ech
    Aug 13, 2026

    Great low-power MCU for portable equipment. Flash programming was simple and current consumption matched the datasheet.

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Brazil 7
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0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
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ME268-002N

FORCEMOS
32D-ME268-002N

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