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HomeProductsIntegrated Circuits (ICs)Specialized ICsME2N7002KW
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ME2N7002KW -

Manufacturer Part Number
ME2N7002KW
Manufacturer
Allelco Part Number
32D-ME2N7002KW
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
13,420 pcs available, New & Original
Parts Description
DAC91001
Data sheet
-
Category
Integrated Circuits (ICs) > Specialized ICs
RoHs Status
Our certification
In stock: 13420

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Specifications

ME2N7002KW Tech Specifications
- ME2N7002KW technical specifications, attributes, parameters and parts with similar specifications to - ME2N7002KW

Product Attribute Attribute Value
Part Number ME2N7002KW
Package DAC91001
Description DAC91001
Stock Condition Get 13420 pcs available quantity at Allelco
Payment PayPal / TT / Credit Card / Western Union
Allelco Certifications ESD / ISO 9001 / ISO 13485 / ISO 28000
Product Attribute Attribute Value
Manufacturer -
RoHs Status -
Warranty 100% Perfect Functions
Transport port Hong Kong
Shipping by DHL / FedEx / UPS / TNT / SF Express
RFQ Email info@allelco.com

Frequently Asked Questions(FAQ)

How does the ME2N7002KW compare to the BSS138 in terms of on-resistance and switching speed for low-voltage digital signal applications?
The ME2N7002KW offers a maximum drain-to-source on-resistance (RDS(on)) of 6.5 ohms at VGS = 10V, which is slightly lower than the typical 4.5 ohms for the BSS138 under similar conditions. However, both devices exhibit comparable gate capacitance and threshold voltage characteristics, enabling similar switching speeds in 3.3V or 5V logic environments. For applications prioritizing minimal conduction loss over ultra-fast transitions—such as power management switches—the ME2N7002KW’s slightly improved RDS(on) may justify its use despite marginal trade-offs in dynamic performance.
What are the key thermal limitations of the ME2N7002KW when used in continuous conduction mode with limited PCB copper area?
With a junction-to-ambient thermal resistance (θJA) of 300°C/W in standard SOT-23 packaging, the ME2N7002KW can dissipate approximately 200 mW continuously at room temperature without exceeding the maximum junction temperature of 150°C. In layouts with minimal copper pour or no heatsinking, this power limit must be respected; exceeding it leads to thermal runaway or reliability degradation. Engineers should derate the device accordingly and consider layout enhancements such as via stitching or localized copper expansion to improve heat dissipation.
Can the ME2N7002KW safely interface directly with a 3.3V microcontroller GPIO pin without level-shifting circuitry?
Yes, the ME2N7002KW has a maximum gate-source threshold voltage (VGS(th)) of 1.5V, ensuring full enhancement at 3.3V drive levels. At VGS = 3.3V, the RDS(on) drops to approximately 10 ohms, allowing efficient switching of loads up to tens of milliamperes. This makes it suitable for direct connection to 3.3V logic without additional components, provided the load current remains within safe operating limits and the source voltage does not exceed 20V.
What precautions should be taken when using the ME2N7002KW in high-frequency switching applications above 1 MHz?
While the ME2N7002KW supports fast switching due to low input capacitance (typ. 10 pF), parasitic inductance from PCB traces and package leads becomes dominant at frequencies above 1 MHz. Minimize loop area between source and load paths, avoid long gate traces, and ensure proper decoupling near the drain terminal. Additionally, verify that the total gate charge (Qg ≈ 3 nC) and rise/fall times remain compatible with the driving capability of the control IC to prevent excessive switching losses or oscillation.
How does the ME2N7002KW perform in environments with elevated ambient temperatures compared to the ME2N7002LS?
The ME2N7002KW shares identical electrical characteristics with the ME2N7002LS but differs in package construction—the K variant uses a more compact SOT-363 format, resulting in higher thermal density. At 85°C ambient temperature, the allowable continuous power dissipation drops to about 130 mW, whereas the LS variant, typically in SOT-23-6, may sustain closer to 180 mW due to better thermal spreading. Therefore, in space-constrained designs with poor airflow, the LS variant might offer superior thermal margin despite identical datasheet specs.
Is it acceptable to operate the ME2N7002KW with a negative gate bias relative to the source?
No, the ME2N7002KW is not rated for negative gate-to-source voltages beyond -0.3V. Applying reverse bias can cause gate oxide damage or trigger parasitic bipolar effects, leading to premature failure. In applications where the source voltage fluctuates above the gate drive (e.g., buck converter freewheeling diodes), consider using a dedicated logic-level MOSFET or implementing a Zener-protected gate drive network to clamp transients.
What is the impact of lead-free soldering profiles on the reliability of the ME2N7002KW?
The ME2N7002KW is qualified for lead-free reflow processes up to 260°C peak temperature. However, repeated exposure above 250°C or rapid thermal cycling can degrade bond wire integrity and increase contact resistance over time. Designers should adhere to IPC-J-STD-020 guidelines and validate solder joint integrity through thermal shock testing if the module undergoes harsh environmental conditions post-assembly.
How do you calculate the minimum required pull-down resistor value for the gate of the ME2N7002KW to prevent unintended turn-on due to leakage currents?
To suppress spurious turn-on caused by capacitive coupling or EMI, a pull-down resistor (RG) should discharge the gate within acceptable settling time while limiting DC current. A practical rule of thumb is RG ≤ (VDRIVE × Ciss) / ILEAKAGE_TARGET. For example, with Ciss ≈ 10 pF and a target discharge current of 1 µA at 5V, RG ≤ 50 MΩ ensures rapid discharge without excessive leakage. Values between 10 kΩ and 100 kΩ are commonly used for noise immunity without compromising switching speed.
Why might two ME2N7002KW transistors from different production lots exhibit variation in actual RDS(on) despite identical datasheet specifications?
Manufacturing tolerances in doping concentration, channel length, and die attachment affect real-world RDS(on), typically resulting in ±20–30% variation across batches. While the datasheet specifies a maximum of 6.5 ohms, measured values often range from 4.0 to 7.5 ohms depending on test conditions and lot-specific process variations. Designers should incorporate worst-case margins into power calculations and consider statistical tolerance analysis during qualification phases.
Can the ME2N7002KW be used as a bidirectional switch in H-bridge configurations?
No, the ME2N7002KW is an N-channel enhancement-mode MOSFET optimized for unidirectional current flow from drain to source. In H-bridge topologies requiring bidirectional conduction, a complementary pair of MOSFETs (N and P-channel) is necessary. Using only N-channel devices like the ME2N7002KW would require external level shifting or charge pumps, increasing complexity and reducing efficiency compared to integrated solutions.

Customer Reviews

Evaluation: 10 Articles

  • ECUb***h
    Sep 22, 2026

    Used for repair of an older automotive ECU. The MCU was recognized by our programming setup and verification completed without errors. The repaired board now starts and communicates normally.

  • RS48***ieldTech
    Sep 16, 2026

    Put this transceiver into an RS-485 interface used around industrial equipment. Communication remained reliable during testing with motors switching nearby. Good result for the replacement board.

  • Logi***b_Chris
    Sep 8, 2026

    Purchased for a Cyclone III development project. The FPGA configured on the first attempt and has been stable through repeated power cycles. No problems with the I/O we are using.

  • Circ***FixerTom
    Sep 2, 2026

    Used this rectifier in a high-current power supply repair. Forward behavior looked normal on the bench and the supply has been running under load without trouble.

  • Retr***UWorks
    Aug 31, 2026

    Needed the exact ST10F269Z2Q6 for servicing an older control unit. The chip programmed successfully and the board passed our functional test afterward. Much easier than redesigning around a newer MCU.

  • Andr***PCBLab
    Aug 28, 2026

    I needed this ADC for an older data acquisition board. Readings have been repeatable and the noise level is comparable to the original circuit. Happy with the purchase.

  • Leat***O'Keefe
    Aug 20, 2026

    one of my hobbies is skydiving. and when i'm skydiving this works great.

  • Ilen***
    Aug 20, 2026

    This product works considerably well. It secretly improves my basketball by a lot.

  • Indu***ialPower
    Aug 17, 2026

    Installed this IGBT module in a power conversion cabinet. Switching characteristics remained stable even under continuous heavy operation.

  • Nikh***ech
    Aug 13, 2026

    Great low-power MCU for portable equipment. Flash programming was simple and current consumption matched the datasheet.

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Delivery Method

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Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.
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Electrostatic Discharge Protection and Handling

All electrostatic-sensitive components are handled in accordance with electrostatic discharge control procedures. The products are hermetically sealed in anti-static safe packaging to prevent electrostatic damage. Appropriate labeling is also applied for identification and traceability. This ensures product integrity during storage, handling and transportation.


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Certifications & Memberships

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  • ISO 9001: 2015
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ME2N7002KW


32D-ME2N7002KW

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