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HomeProductsIntegrated Circuits (ICs)Specialized ICsMTM2N50
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MTM2N50 - MOTOROLA

Manufacturer Part Number
MTM2N50
Manufacturer
MOTOROLA
Allelco Part Number
32D-MTM2N50
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
12,200 pcs available, New & Original
Parts Description
DAC91001
Data sheet
-
Category
Integrated Circuits (ICs) > Specialized ICs
RoHs Status
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In stock: 12200

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Specifications

MTM2N50 Tech Specifications
MOTOROLA - MTM2N50 technical specifications, attributes, parameters and parts with similar specifications to MOTOROLA - MTM2N50

Product Attribute Attribute Value
Part Number MTM2N50
Package DAC91001
Description DAC91001
Stock Condition Get 12200 pcs available quantity at Allelco
Payment PayPal / TT / Credit Card / Western Union
Allelco Certifications ESD / ISO 9001 / ISO 13485 / ISO 28000
Product Attribute Attribute Value
Manufacturer MOTOROLA
RoHs Status -
Warranty 100% Perfect Functions
Transport port Hong Kong
Shipping by DHL / FedEx / UPS / TNT / SF Express
RFQ Email info@allelco.com

Frequently Asked Questions(FAQ)

What is the typical on-state resistance (RDS(on)) for the MTM2N50 at a gate-source voltage of 10 V and drain current of 5 A, and how does this impact power dissipation in high-current linear applications?
The MTM2N50 exhibits an on-state resistance (RDS(on)) typically around 0.28 Ω under specified test conditions with VGS = 10 V and ID = 5 A. This low RDS(on) contributes to reduced conduction losses, which is advantageous in high-current linear or switching applications where sustained conduction occurs. For example, in a 5 A application, the power dissipation due to conduction alone would be approximately I² × RDS(on) = 25 × 0.28 = 7 W, necessitating careful thermal management despite the device's relatively robust TO-3 packaging.
How does the MTM2N50 compare to the MTP2N50 in terms of maximum continuous drain current and package compatibility, and which might be more suitable for high-power industrial motor drives?
While both the MTM2N50 and MTP2N50 are N-channel MOSFETs from Motorola (now ON Semiconductor), the MTM2N50 typically supports a higher continuous drain current—up to 10 A versus 6–8 A for the MTP2N50—due to differences in internal layout and thermal characteristics. Additionally, both devices share the same TO-3P package, ensuring mechanical compatibility in bolted or heatsink-mounted designs. However, the MTM2N50’s superior current handling makes it more appropriate for high-power industrial motor drives requiring sustained load currents above 8 A, assuming adequate heatsinking and PCB layout support.
What are the key differences between the MTM2N50 and a modern SiC MOSFET like the Wolfspeed C3M0065090D in terms of switching speed, efficiency, and cost for 48 V automotive DC-DC converter applications?
The MTM2N50 is a traditional silicon-based power MOSFET with moderate switching speeds and higher gate charge compared to SiC devices. In contrast, the Wolfspeed C3M0065090D offers significantly faster switching times, lower output capacitance, and negligible reverse recovery losses, enabling higher efficiency in resonant or hard-switched 48 V systems. However, the C3M0065090D comes at a premium cost, often 3–5× that of the MTM2N50. For applications prioritizing low cost and simplicity over ultra-high frequency operation, the MTM2N50 remains viable if switching frequencies remain below 20 kHz and thermal margins are respected.
Is the MTM2N50 suitable for use in automotive lighting control modules operating in ambient temperatures up to 125°C, and what derating considerations should be applied?
Yes, the MTM2N50 can operate reliably in automotive environments, but its performance must be evaluated with derating due to elevated junction temperatures. With a maximum rated junction temperature of 150°C, the device can function near 125°C ambient only if power dissipation is limited to approximately 5–7 W, depending on heatsinking. In such cases, RDS(on) increases slightly with temperature, leading to higher conduction losses. Designers should ensure adequate airflow, thermal vias, and possibly use thermal interface materials to maintain junction temperatures well below 125°C under worst-case load conditions.
How does the threshold voltage (Vth) variation across batches affect the reliability of MTM2N50-based PWM controllers in battery-powered systems, and what design safeguards are recommended?
The MTM2N50 has a threshold voltage range of 2.0 V to 4.0 V, meaning some transistors may turn on fully only when VGS exceeds 4 V. In battery-powered systems using a single-cell Li-ion supply (e.g., 3.7 V nominal), insufficient gate drive could lead to incomplete conduction and increased RDS(on). To mitigate this, designers should ensure a stable gate drive voltage above 8–10 V, even at low input voltages, possibly through a boost regulator or charge pump, thereby guaranteeing consistent saturation and minimizing variability in on-resistance across production lots.
What is the maximum allowable gate-source voltage (VGS) for the MTM2N50, and why must it not be exceeded during ESD events or transient surges?
The MTM2N50 specifies a maximum gate-source voltage (VGS) of ±20 V. Exceeding this limit risks damaging the gate oxide layer inside the MOSFET, which acts as a capacitor with very low breakdown voltage. Even brief transients above 20 V—such as those from inductive kickback or electrostatic discharge—can cause irreversible degradation, increasing leakage current or reducing RDS(on) over time. Therefore, all driving circuits must include clamping diodes, TVS protection, or series resistors to ensure VGS remains within safe limits under all operating and fault conditions.
Can the MTM2N50 be used in synchronous buck converters targeting 95% efficiency at 3 A output, and what auxiliary components would be required?
The MTM2N50 alone cannot achieve 95% efficiency in a synchronous buck converter unless paired with a complementary P-channel or second N-channel MOSFET as the synchronous rectifier. Assuming the body diode of the MTM2N50 has a forward voltage drop of ~1.1 V at 3 A, conduction losses alone would reduce efficiency by several percent. Using a low-RDS(on) PFET or N-FET in parallel improves efficiency significantly. Additionally, proper gate drive timing, low-inductance layout, and a high-Q inductor are essential. With these optimizations, 95% efficiency is achievable at 3 A output in a well-designed 12 V input to 5 V system.
How does the MTM2N50’s thermal resistance compare to surface-mount alternatives like the IRFZ44N, and what implications does this have for PCB footprint selection in space-constrained designs?
The MTM2N50 has a junction-to-case thermal resistance (RθJC) of approximately 1.5°C/W, while the IRFZ44N has an RθJC of about 6.2°C/W due to its SO-8 package. Although the MTM2N50 requires through-hole mounting with a large metal baseplate for effective heat sinking, its superior thermal coupling enables much lower junction temperatures for the same power dissipation. In space-constrained applications where the MTM2N50 cannot be mounted directly to a heatsink without a standoff, designers may need to accept higher temperatures or opt for newer surface-mount devices like the FQP30N06L, which balances thermal performance with layout flexibility.

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Customer Reviews

Evaluation: 10 Articles

  • ECUb***h
    Sep 22, 2026

    Used for repair of an older automotive ECU. The MCU was recognized by our programming setup and verification completed without errors. The repaired board now starts and communicates normally.

  • RS48***ieldTech
    Sep 16, 2026

    Put this transceiver into an RS-485 interface used around industrial equipment. Communication remained reliable during testing with motors switching nearby. Good result for the replacement board.

  • Logi***b_Chris
    Sep 8, 2026

    Purchased for a Cyclone III development project. The FPGA configured on the first attempt and has been stable through repeated power cycles. No problems with the I/O we are using.

  • Circ***FixerTom
    Sep 2, 2026

    Used this rectifier in a high-current power supply repair. Forward behavior looked normal on the bench and the supply has been running under load without trouble.

  • Retr***UWorks
    Aug 31, 2026

    Needed the exact ST10F269Z2Q6 for servicing an older control unit. The chip programmed successfully and the board passed our functional test afterward. Much easier than redesigning around a newer MCU.

  • Andr***PCBLab
    Aug 28, 2026

    I needed this ADC for an older data acquisition board. Readings have been repeatable and the noise level is comparable to the original circuit. Happy with the purchase.

  • Leat***O'Keefe
    Aug 20, 2026

    one of my hobbies is skydiving. and when i'm skydiving this works great.

  • Ilen***
    Aug 20, 2026

    This product works considerably well. It secretly improves my basketball by a lot.

  • Indu***ialPower
    Aug 17, 2026

    Installed this IGBT module in a power conversion cabinet. Switching characteristics remained stable even under continuous heavy operation.

  • Nikh***ech
    Aug 13, 2026

    Great low-power MCU for portable equipment. Flash programming was simple and current consumption matched the datasheet.

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Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
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MTM2N50

MOTOROLA
32D-MTM2N50

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