on November 4th 4,547

1N5711 Schottky Diode: Alternatives, Features, and Datasheet

The 1N5711 Schottky Diode stands out for its ability to switch at remarkable speeds, paired with a notably low forward voltage drop. This article delves into the characteristics and applications of the 1N5711, highlighting its great contribution to eco-friendly technology advancements. Through an exploration of its attributes and practical implementations, we aim to present a comprehensive understanding of its impact on modern electronics design and performance.

Catalog

Overview of the 1N5711

The 1N5711 diode intricately blends metal and silicon, permitting it to achieve not only a remarkable high breakdown voltage but also remarkably quick switching capabilities. Its effective application in UHF/VHF detection and impulse tasks is due to its expansive operational range. The diode's DO-35 package offers reliability with a forward current threshold of 15mA paired with a forward voltage of 0.41V. With its compatibility with standard leaded methodologies, there's an ease in its use for through-hole mounting processes, adding to its functional appeal and contributing to a sense of engineering satisfaction.

1N5711 Pin Configuration

1N5711 Symbol and CAD Model

Features of the 1N5711

Fortified Protection Layer

The 1N5711 diode includes a fortified protection layer that enhances its ability to withstand sudden voltage surges. This layer reduces the risk of damage from abrupt voltage spikes, offering the diode a longer operational life. Such a design from previous electronic faults due to insufficient over-voltage protection, which often resulted in costly downtime and repairs.

Exceptionally Low Activation Voltage

What truly distinguishes the 1N5711 is its remarkably low activation voltage. This feature allows the diode to initiate current flow with minimal voltage, lending itself well to energy-efficient circuit designs. In the contemporary electronics where conserving energy is often at the forefront, this property contributes to reducing operational expenses and prolonging battery life by minimizing power losses during voltage conversions.

Ultrafast Switching Velocity

The diode's ultrafast picosecond-level switching velocity is a definitive characteristic. This rapid switching enables immediate transitions, which are good in high-frequency applications, notably RF and microwave circuits. By minimizing latency, it improves the speed and performance of electronic devices. This feature is a testament to ongoing improvements in semiconductor technology, echoing the industry's progression towards more agile and responsive components.

1N5711 Specifications

Type	Parameter
Factory Lead Time	15 Weeks
Mount	Through Hole
Number of Pins	2
Diode Element Material	SILICON
Number of Elements	1
Packaging	Tape & Reel (TR)
Part Status	Active
Number of Terminations	2
ECCN Code	EAR99
HTS Code	8541.40.00.70
Voltage - Rated DC	70V
Current Rating	15mA
Pin Count	2
Contact Plating	Tin
Package / Case	DO-204AH, DO-35, Axial
Weight	4.535924g
Breakdown Voltage / V	70V
Operating Temperature	-65°C~200°C TJ
JESD-609 Code	e3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	Axial
Additional Feature	FAST SWITCHING
Capacitance	2pF
Terminal Form	WIRE
Base Part Number	1N57
Polarity	Standard
Diode Type	Schottky - Single
Output Current	15mA
Forward Current	15mA
Forward Voltage	1V
Peak Reverse Current	200nA
Capacitance @ Vr, F	2pF @ 0V 1MHz
Outside Diameter	1.93 mm
Reverse Voltage (DC)	70V
Height	2mm
Width	2mm
Radiation Hardening	No
Lead Free	Lead Free
Power Dissipation	430mW
Case Connection	ISOLATED
Max Reverse Leakage Current	200nA
Reverse Recovery Time	100 ps
Max Repetitive Reverse Voltage (Vrrm)	70V
Reverse Voltage	70V
Max Junction Temperature (Tj)	200°C
Diameter	2mm
Length	4.5mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

Functional Block Diagram of 1N5711

Applications of the 1N5711 Diode

UHF/VHF Signal Detection

The 1N5711 diode becomes use in UHF/VHF signal detection, primarily due to its fast switching capabilities and low capacitance. These features help in refining and enhancing signal reception, reflecting the deep yearning for clearer telecommunications. By reducing signal distortion, the diode provides improved performance in communication systems, echoing a shared understanding in industries where clarity over long distances frequently emerges as a focal point.

Pulse Handling with Expansive Dynamic Range

In pulse applications, the diode's proficiency in managing a wide dynamic range stands as a distinct asset. Its quick response and adaptability to changing signal intensities enable smooth handling of intricate electronic operations. Lessons drawn from fields of analog and digital circuit design spotlight the versatile utility of the diode, illuminating its dynamic range management as a pathway to achieving operational precision and stability.

Safety of MOS Devices

1N5711 diodes competently shield sensitive MOS devices from harm due to voltage spikes, an intricate facet of its design. Swift recovery time ensures rapid clamping of transients, providing a trustworthy barrier against overvoltage threats. This characteristic is relevant in power electronics, where strategic implementation of protective measures becomes almost a ritual of precision.

Agile Switching in Low Logic Level Circuits

The diode's capability for efficient switching in low logic level circuits makes it an optimal choice for curbing power loss and boosting circuit efficiency. In consumer electronics, benefit from its capacity to uphold integrity while reducing power consumption, sparking innovations in portable device designs.

1N5711 Diode's Multifaceted Applications

Examining the varied applications of the 1N5711 diode unveils its role in contemporary electronics. Its successful tackle of the intricate challenges within diverse applications highlights the unique demands for selecting and integrating components. This narrative signifies the continuous exchange between theoretical concepts and practical implementation, guiding advancements in electronic engineering.

1N5711 Equivalents and Alternatives

Part	Manufacturers	Category	Description
JANTX1N5711-1	Microsemi	TVS Diodes	JANTX Series 70V 33mA Through Hole Schottky Diode - DO-35
JANTXV1N5711-1	Microsemi	Diodes	Diode Schottky 70V 0.033A 2Pin DO-35
NTE583	NTE Electronics	Schottky Diodes	NTE ELECTRONICS NTE583 RF Schottky Diode, Single, 70V, 15mA, 1V, 2pF, DO-35
UF1001-T	Diodes Incorporated		Through Hole DO-204AL, DO-41, Axial 1 V 50 V 50 ns No Single Lead Free
1N4001G-T	Diodes Incorporated		Through Hole DO-204AL, DO-41, Axial 1 V 50 V 2 μs No Single Lead Free
1N5400-T	Diodes Incorporated		Through Hole DO-201AD, Axial 1 V 50 V - No Single Lead Free

Dimensions of 1N5711

1N5711 Manufacturer Information

STMicroelectronics distinguishes itself in cutting-edge semiconductor innovations, shaping the progression of today’s electronic devices. This analysis focuses on how this company enhances connectivity and efficiency within various industries, while revealing broader impacts in the technological sphere. An important observation arises when considering STMicroelectronics' extensive array of offerings: the blend of innovation and application underscores their leadership in the industry. Upholding this balance enhances their ability to provide transformative solutions, encouraging other ecosystem players to adjust and innovate together. This strategic approach not only gives them a competitive edge but also nurtures collaborative growth, fostering a seamless transition to future technological environments.

Datasheet PDF

1N5711 Datasheets:

Cylindrical Battery Holders.pdf