
The 2N1711 transistor, encased in a TO-39 metal package, plays diverse roles, such as switching, amplification, and oscillation. It handles up to 500mA of collector current in switching and withstands peak collector currents up to 1A, adeptly managing brief surges of high current. This ability makes the 2N1711 a reliable choice for circuits that demand rapid and dynamic responses.
In its practical applications, the flexible nature of the 2N1711 shines. It excels in swiftly switching currents, making it suitable for a range of uses from straightforward signal amplification to intricate oscillation tasks. Its robust design ensures dependable operation in various electronic settings, mirroring lessons learned from actual use where precision and steadiness matter.
The deployment of the 2N1711 emphasizes its requisite role. In audio amplification circuits, for example, it can markedly enhance sound clarity and fidelity. These enhancements show that even with technological advances, traditional components like the 2N1711 remain instrumental in achieving exceptional performance.

|
Type |
Parameter |
|
Mount |
Through Hole |
|
Mounting Type |
Through Hole |
|
Package / Case |
TO-205AD, TO-39-3 Metal Can |
|
Number of Pins |
3 |
|
Weight |
4.535924g |
|
Transistor Element Material |
Silicon |
|
Collector-Emitter Breakdown Voltage |
50V |
|
Number of Elements |
1 |
|
hFE (Min) |
40 |
|
Operating Temperature |
175°C TJ |
|
Packaging |
Tube |
|
JESD-609 Code |
e3 |
|
Pbfree Code |
Yes |
|
Part Status |
Obsolete |
|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
|
Number of Terminations |
3 |
|
Terminal Finish |
Matte Tin (Sn) |
|
Voltage - Rated DC |
75V |
|
Max Power Dissipation |
800mW |
|
Terminal Position |
Bottom |
|
Terminal Form |
Wire |
|
Current Rating |
500mA |
|
Frequency |
100MHz |
|
Base Part Number |
2N17 |
|
Pin Count |
3 |
|
Element Configuration |
Single |
|
Power Dissipation |
800mW |
|
Transistor Application |
Switching |
|
Gain Bandwidth Product |
100MHz |
|
Polarity/Channel Type |
NPN |
|
Transistor Type |
NPN |
|
Collector Emitter Voltage (VCEO) |
50V |
|
Max Collector Current |
500mA |
|
DC Current Gain (hFE) @ Ic, Vce |
35 @ 100mA, 10V |
|
Current - Collector Cutoff (Max) |
10nA ICBO |
|
Vce Saturation (Max) @ Ib, Ic |
1.5V @ 15mA, 150mA |
|
Transition Frequency |
100MHz |
|
Collector Base Voltage (VCBO) |
75V |
|
Emitter Base Voltage (VEBO) |
7V |
|
Height |
6.6mm |
|
Length |
9.4mm |
|
Width |
9.4mm |
|
Radiation Hardening |
No |
|
RoHS Status |
ROHS3 Compliant |
|
Lead Free |
Lead Free |
|
Feature |
Description |
|
Package Type |
TO-39 |
|
Transistor Type |
NPN |
|
Max Collector Current (IC) |
500 mA |
|
Max Collector-Emitter Voltage (VCE) |
50 V |
|
Max Collector-Base Voltage (VCB) |
75 V |
|
Max Emitter-Base Voltage (VBE) |
7 V |
|
Max Collector Dissipation (Pc) |
800 mW |
|
Max Transition Frequency (fT) |
100 MHz |
|
Minimum & Maximum DC Current Gain (hFE) |
100 to 300 |
|
Max Storage, Operating & Junction Temperature Range |
-65°C to 200°C |
Known for its resilience in handling elevated voltages, the 2N1711 stands as a guardian against breakdown. In power supply designs, ensuring reliability under stress becomes more apparent. By selecting components with such voltage endurance, electronics endure and thrive in challenging conditions, offering peace of mind to those who rely on them.
Exhibiting minimal leakage current, the 2N1711 optimizes circuit efficiency by minimizing unwarranted power use during inactivity. Especially in battery-powered devices, this trait becomes a boon, extending intervals between charges and nurturing the life of the device. You can often choose transistors with this feature to craft more sustainable designs.
Due to its low capacitance, this transistor minimizes disruptions in high-frequency signals, becoming a pillar of reliability in RF applications. Where clarity and precision are sought after, such performance ensures communication devices maintain signal integrity, sparking confidence in their users.
A wide current range, coupled with the stable beta, offers adaptability in amplification scenarios, gracefully accommodating varying loads without substantial fluctuations in gain. This attribute streamlines design processes, providing consistent performance across different operational landscapes. Transistors with these traits are favored for their reliability in delivering predictable circuit responses.
The 2N1711 transistor often finds a place in various switching applications. Its solid build makes it suited for handling medium power tasks effortlessly, even in challenging scenarios. You can favor it for circuits needing swift on-off transitions, leveraging its reliable switching proficiency to boost system responsiveness. Experience indicates that its steady performance under diverse conditions makes it a trustworthy choice for dynamic systems.
In audio setups, the 2N1711 functions as a competent amplifier. You can appreciate its capability to enhance sound clarity by amplifying signals with minimal distortion. Its role in analog circuits emphasizes its importance in maintaining signal integrity, which is active for high-fidelity audio. You can often turn to it for DIY audio projects, valuing its precision and dependability.
The domain of pre-amplification is another area where the 2N1711 shines. It prepares signals for further amplification stages, ensuring outputs are both clear and faithful. Its low noise profile makes it fitting for sensitive audio and radio frequency applications, where early signal quality plays a major role in the outcome. Using the 2N1711 in pre-amplification can significantly enhance performance.
The reach of the 2N1711 extends to radio frequency tasks, where it handles RF signals effectively. Its capacity to operate at high frequencies makes it valued in RF circuits. You can depend on its stability and precision to sustain consistent communication quality, where maintaining signal strength against interference is active. Actual use of this component often highlights its major role in RF technology advancements.
Beyond specific applications, the 2N1711 is employed for general signal amplification. It assists in projects ranging from small electronics to complex circuit designs, offering useful amplification functions. Its flexibility enables it to meet varying circuit demands with ease, consistently delivering outstanding results across numerous applications. This versatility embodies the broader strategy of using adaptable components to simplify design and execution in diverse technological ventures.

The 2N1711 transistor showcases remarkable adaptability, fitting seamlessly into common base, common emitter, and common collector configurations. Each setup offers its advantages. The common emitter setup, in particular, is cherished for its impressive voltage and power gain. It often boosts input signal strength by approximately 20dB, translating to a hundredfold increase. Here, the collector voltage surpasses the base voltage, while the emitter current involves both base and collector currents, demonstrating the cumulative current flow.
Doping variations play a key role in transistor operations. The emitter undergoes heavy doping, thereby lowering resistance and enhancing electron injection. Conversely, the collector receives light doping to facilitate efficient collection and minimize power loss. These differences shape amplification traits and ensure reliability across diverse applications.
Comprehending the current amplification factor, indicated by Beta (β), assists in crafting efficient circuits. It defines the ratio of collector current to base current, aiding you in forecasting transistor behavior under varying conditions. Practical applications highlight how careful control of β can significantly sway circuit performance, thus influencing decisions where stability and efficiency are used.

STMicroelectronics emerges as a substantial force in the semiconductor sector, celebrated for its groundbreaking innovations. At the forefront of microelectronics, the company's expertise shines through its cutting-edge capabilities, especially in System-on-Chip (SoC) technologies. Their solutions span a wide array of fields, embedding themselves deeply in the automotive, industrial, personal electronics, and communication sectors, showcasing their far-reaching influence.
The prowess of STMicroelectronics in SoC technology is an initial element of their success, facilitating the merging of intricate functionalities into unified components. By perfecting these solutions, they have profoundly impacted the efficiency and performance of electronic devices. This strategy maximizes space and power efficiency while elevating user experiences across diverse platforms, reflecting their dedication to advancement and excellence.
The 2N1711 is a silicon-based NPN transistor. It finds its place in high-performance settings such as amplifiers, oscillators, and switches. Its design mostly shines in low-noise amplification, making it a preferred choice for audio and radio frequency uses. In actual applications, it is cherished for enhancing signal clarity in communication devices and sensitive electronics. Studying successful implementations highlights how component selection influences overall system performance.
The 2N1711 operates as a bipolar junction transistor (BJT), using both holes and electrons for conduction. By applying a positive voltage to the base, the transistor modulates larger currents between the emitter and collector, functioning as a current amplifier. This process allows for precise control in electronic circuits, showcasing its role in regulation and signal modulation. Insights from the industry show that skillful manipulation of base current can significantly enhance the transistor's performance, illustrating the intricacies of strategic electronics engineering.
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