on November 16th 4,153

IRF1405 Power MOSFET: Features, Equivalents, and Datasheet

Today, we explore the IRF1405, a versatile N-channel MOSFET packaged in a TO-220 case, widely utilized in the automotive industry. This article provides a detailed look at its features, complete technical specifications, and a range of practical uses, aimed at deepening our understanding of this important component.

Catalog

What is the IRF1405 MOSFET?

The IRF1405 MOSFET thrives under high-temperature automotive conditions, enduring up to 175°C. Its impressive low on-resistance is noteworthy for the small silicon area it utilizes, making it a dependable component in automotive applications that prioritize reliability and efficiency. The IRF1405 is low on-resistance, which minimizes both energy loss and heat production. This benefits the performance of automotive circuits. The fast switching abilities of the IRF1405 enhance its efficiency, in automotive contexts that demand rapid responsiveness. Its improved repetitive avalanche ratings offer protection against voltage spikes, ensuring the longevity and reliability for sustained operation. The IRF1405 MOSFET emerges as an important component in cutting-edge automotive electronics, with its blend of low on-resistance, swift switching, and high-temperature endurance demonstrating the harmony between technological advancement and practical application.

IRF1405 Equivalents

• IRF034

• IRF044

• IRF044SMD

• IRF054

• IRF054SMD

• IRF100B201

IRF1405 Pin Configuration

Pin No	Pin Name	Pin Description
1	Gate (G)	Controls the biasing of the MOSFET
2	Drain (D)	Current flows in through the Drain
3	Source (S)	Current flows out through Source and leaves MOSFET

IRF1405 Symbol, Footprint, and CAD Model

Features of the IRF1405

• Low On-Resistance: Enhances efficiency by minimizing power losses, reducing energy consumption, and extending device longevity.

• High DV/DT Rating (5 V/ns): Ensures stability and reliability in applications with rapid voltage changes, protecting systems from voltage spikes.

• Repetitive Avalanche Capability: Offers strong resilience against frequent voltage overloads, improving reliability in high-stress environments.

• High Temperature Operation (up to 175°C): Maintains consistent performance in extreme conditions, ideal for automotive and industrial applications.

• Lead-Free Compliance: Meets global sustainability standards, reducing environmental impact and supporting responsible manufacturing.

IRF1405 Technical Specifications

Technical details, characteristics, and similar components to the Infineon Technologies IRF1405PBF.

Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Through Hole
Number of Pins	3
Current - Continuous Drain (Id) @ 25°C	169A
Number of Elements	1
Turn Off Delay Time	130 ns
Packaging	Tube
Published	2004
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	Through Hole
Resistance	5.3mOhm
Voltage - Rated DC	55V
Lead Pitch	2.54mm
Element Configuration	Single
Mount	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	330W Tc
Operating Temperature	-55°C~175°C TJ
Series	HEXFET®
Part Status	Active
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Current Rating	169A
Number of Channels	1
Operating Mode	ENHANCEMENT MODE
Power Dissipation	330W
Turn On Delay Time	13 ns
Transistor Application	SWITCHING
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	280nC @ 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	169A
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	75A
Pulsed Drain Current-Max (IDM)	680A
Avalanche Energy Rating (Eas)	560 mJ
Max Junction Temperature (Tj)	175°C
Height	19.8mm
Width	4.826mm
Radiation Hardening	No
Lead Free	Lead Free
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.3mΩ @ 101A, 10V
Input Capacitance (Ciss) (Max) @ Vds	5480pF @ 25V
Rise Time	180ns
Fall Time (Typ)	110 ns
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Recovery Time	130 ns
Nominal Vgs	4 V
Length	10.088mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

Alternatives to the IRF1405

Part Number	Description	Manufacturer
AUIRF1405	Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3	International Rectifier
IRF1405PBF	Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD-FREE, PLASTIC PACKAGE-3	International Rectifier
IRF1405	Power Field-Effect Transistor, 169A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN	International Rectifier
IRF1405PBF	Mount Through Hole, Package / Case TO-220-3, Continuous Drain Current (ID) 169 A, Current - Continuous Drain (Id) @ 25°C 169A (Tc), Threshold Voltage 4 V, Gate to Source Voltage (Vgs) 20 V, Power Dissipation 330 W, Power Dissipation-Max 330W (Tc)	Infineon Technologies
IRF1404PBF	Mount Through Hole, Package / Case TO-220-3, Continuous Drain Current (ID) 210 A, Current - Continuous Drain (Id) @ 25°C 210A (Tc), Threshold Voltage 4 V, Gate to Source Voltage (Vgs) 20 V, Power Dissipation 330 W, Power Dissipation-Max 330W (Tc)	Infineon Technologies
IRFB3306PBF	Mount Through Hole, Package / Case TO-220-3, Continuous Drain Current (ID) 160 A, Current - Continuous Drain (Id) @ 25°C 120A (Tc), Threshold Voltage 4 V, Gate to Source Voltage (Vgs) 20 V, Power Dissipation 230 W, Power Dissipation-Max 230W (Tc)	Infineon Technologies
IRF2204PBF	Mount Through Hole, Package / Case TO-220-3, Continuous Drain Current (ID) 202 A, Current - Continuous Drain (Id) @ 25°C 202A (Tc), Threshold Voltage 4 V, Gate to Source Voltage (Vgs) 20 V, Power Dissipation 333 W, Power Dissipation-Max 333W (Tc)	Infineon Technologies

Applications of the IRF1405

Boosting Efficiency in Electric Power Steering

Within electric power steering systems, the IRF1405 emerges as a key player. Its ability to accommodate substantial currents results in smoother and more dependable steering operations. By reducing resistance and maximizing energy efficiency, these transistors ensure that the steering system is both sensitive to driver commands and economical with power usage. This means drivers enjoy lowering steering efforts and improved vehicle stability, instilling a greater sense of security.

Enhancing Climate Control for Comfort

The deployment of the IRF1405 in climate control systems highlights its versatility in meeting diverse automotive requirements. Its power regulation capability is integral to maintaining preferred cabin temperatures and extending battery life. This dual role impacts passenger comfort across varying weather conditions and times of year, illustrating the equilibrium between conserving energy and maintaining performance.

Perspectives on System Integration

Effective embedding of the IRF1405 in automotive systems requires attentiveness to design and system aspirations. The adaptable nature of this MOSFET allows customization for specific uses, fostering advancements in vehicle design and control frameworks. Its sturdy characteristics ensure consistent functionality under different operational challenges, boosting vehicle dependability.

Package for IRF1405

IRF1405 Manufacturer Information

Infineon's zeal for manufacturing excellence surfaces in diverse domains. The company's agility in responding to swift technological transitions and evolving market needs stands out. Analysts in the field have recorded a trend towards infusing Industry 4.0 concepts, encompassing automation and live data analysis, to elevate production efficacy. The evolution towards intelligent manufacturing systems has led to amplified productivity and minimized error margins, showcased in Infineon's optimized production processes. In the fiercely competitive semiconductor sphere today, Infineon Technologies AG illustrates how manufacturing distinction can be realized through a mix of advanced technology, strategic vision, and creativity. Continuous adaptation to technological upheavals coupled with a dedicated workforce propels the company towards durable achievements.