
TheIRF4905, characterized as a P-Channel MOSFET, distinguishes itself with its incorporation of advanced processing techniques. These cutting-edge methods bestow upon it rapid switching capabilities, paired with a desirable low on-resistance, establishing it as a mainstay in efficient electronic design. To grasp the intricate advantages offered by the IRF4905, one must explore its structural and functional elements, which unveil its versatility across diverse applications.
The IRF4905's adoption of sophisticated processing methods capitalizes on advancements in silicon materials to reduce resistance. By minimizing energy loss during electrical transmission, it amplifies energy efficiency within circuits. These enhancements resonate profoundly in systems centered around power efficiency, such as renewable energy solutions or automotive applications. Navigating these processes requires a fusion of notional knowledge and hands-on experience, mostly valuable for you striving to enhance device performance.
Encased within the widely recognized TO-220AB package, the IRF4905 derives an advantage from its adaptability. The packaging enables seamless integration into a variety of circuit boards, making it suitable for use in consumer electronics as well as industrial control systems. In practical settings, devices that harmonize ease of implementation with superior performance are often preferred. For instance, effective heat dissipation, combined with a compact design, plays a substantial role in thermal management—an area where hands-on experience substantially complements notional knowledge.

|
Pin No. |
Pin Name |
Symbol |
Function |
|
1 |
Gate |
G |
Controls the current in the channel between drain and
source |
|
2 |
Drain |
D |
Emits several holes |
|
3 |
Source |
S |
Collects some holes |



A comprehensive overview of the Infineon TechnologiesIRF4905PBF, detailing its technical specifications, attributes, and performance parameters, alongside a comparison with components featuring similar specifications for informed selection and optimal application design.
|
Type |
Parameter |
|
Factory Lead Time |
12 Weeks |
|
Mount |
Through Hole |
|
Mounting Type |
Through Hole |
|
Package / Case |
TO-220-3 |
|
Number of Pins |
3 |
|
Transistor Element Material |
Silicon |
|
Current - Continuous Drain (Id) |
74A Tc |
|
Drive Voltage (Max Rds On, Min) |
10V |
|
Number of Elements |
1 |
|
Power Dissipation (Max) |
200W Tc |
|
Turn Off Delay Time |
61 ns |
|
Operating Temperature |
-55°C ~ 175°C TJ |
|
Packaging |
Tube |
|
Series |
HEXFET® |
|
Published |
1997 |
|
JESD-609 Code |
e3 |
|
Part Status |
Active |
|
Moisture Sensitivity Level (MSL) |
(Unlimited) |
|
Number of Terminations |
3 |
|
Termination |
Through Hole |
|
ECCN Code |
EAR99 |
|
Terminal Finish |
Matte Tin (Sn) - with Nickel (Ni) barrier |
|
Additional Feature |
Avalanche Rated, High Reliability, Ultra-Low Resistance |
|
Voltage - Rated DC |
55V |
|
Peak Reflow Temperature (°C) |
250 |
|
Current Rating |
74A |
|
Time @ Peak Reflow Temperature |
30 seconds |
|
Lead Pitch |
2.54mm |
|
Number of Channels |
1 |
|
Element Configuration |
Single |
|
Operating Mode |
Enhancement Mode |
|
Power Dissipation |
200W |
|
Case Connection |
Drain |
|
Turn On Delay Time |
18 ns |
|
FET Type |
P-Channel |
|
Transistor Application |
Switching |
|
Rds On (Max) @ Id, Vgs |
20mΩ @ 38A, 10V |
|
Vgs(th) (Max) @ Id |
4V @ 250μA |
|
Input Capacitance (Ciss) (Max) |
3400pF @ 25V |
|
Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
|
Rise Time |
99 ns |
|
Drain to Source Voltage (Vdss) |
55V |
|
Vgs (Max) |
±20V |
|
Fall Time (Typ) |
96 ns |
|
Continuous Drain Current (ID) |
74A |
|
Threshold Voltage |
4V |
|
JEDEC-95 Code |
TO-220AB |
|
Gate to Source Voltage (Vgs) |
20V |
|
Drain Current-Max (Abs) (ID) |
64A |
|
Drain-source On Resistance-Max |
0.02Ω |
|
Drain to Source Breakdown Voltage |
55V |
|
Pulsed Drain Current-Max (IDM) |
260A |
|
Dual Supply Voltage |
55V |
|
Recovery Time |
130 ns |
|
Max Junction Temperature (Tj) |
175°C |
|
Nominal Vgs |
4V |
|
Height |
19.8mm |
|
Length |
10.5156mm |
|
Width |
4.69mm |
|
REACH SVHC |
No SVHC |
|
Radiation Hardening |
No |
|
RoHS Status |
RoHS3 Compliant |
|
Lead Free |
Contains Lead, Lead Free |
|
Parameter |
Specification |
|
Package Type |
TO-220 |
|
Transistor Type |
N Channel |
|
Max Voltage Applied (Drain to Source) |
-55V |
|
Max Gate to Source Voltage |
±20V |
|
Max Continuous Drain Current |
–74A |
|
Max Pulsed Drain Current |
–260A |
|
Max Power Dissipation |
200W |
|
Minimum Voltage Required to Conduct |
-2V to -4V |
|
Max Storage & Operating Temperature |
-55 to +175°C |
The IRF4905 MOSFET is notable for its extraordinary reliability, a trait widely appreciated. Its sturdy construction undergoes rigorous assessment to meet stringent industry standards, ensuring it performs consistently even in harsh conditions. This bolsters the dependability of systems utilizing this component. The IRF4905 also addresses sourcing difficulties, being readily accessible through numerous distributors, thus preventing supply chain issues from hindering project progress.
The IRF4905 excels in low-frequency scenarios, distinguished by its exceptional capability to handle substantial current loads accurately. Automotive and industrial sectors find this feature mostly beneficial, as it contributes to operational efficiency and extends system life by delivering durable and precise current management. Such insights are often shared by you who recognize the IRF4905’s role in optimizing system functionality.
You can frequently note the ease with which the IRF4905's standard pin configuration integrates into designs. This not only facilitates easy replacement in existing frameworks but also simplifies the development phase of new projects. The simplicity of the application reduces the time and cost associated with circuit redesign, enhancing project timelines and budgets. This serves as a subtle yet influential benefit, enabling seamless component transitions without sacrificing the overall performance or integrity of the devices.
• AM90P06-20P
|
Part Number |
Manufacturer |
Mount |
Package / Case |
Drain to Source Voltage
(Vdss) |
Continuous Drain Current
(ID) |
Current - Continuous Drain
(Id) @ 25°C |
Threshold Voltage |
Gate to Source Voltage (Vgs) |
Power Dissipation |
|
IRF4905PBF |
Infineon Technologies |
Through Hole |
TO-220-3 |
55V |
74 A |
74A (Tc) |
4 V |
20 V |
200 W |
|
IRF3205ZPBF
|
Infineon Technologies |
Through Hole |
TO-220-3 |
- |
75 A |
75A (Tc) |
4 V |
20 V |
170 W |
|
IRF1010ZPBF |
Infineon Technologies |
Through Hole |
TO-220-3 |
- |
75 A |
75A (Tc) |
4 V |
20 V |
200 W |
|
AUIRF4905 |
Infineon Technologies |
Through Hole |
TO-220-3 |
55V |
74 A |
74A (Tc) |
2 V |
20 V |
200 W |
|
HUF75339P3 |
ON Semiconductor |
Through Hole |
TO-220-3 |
- |
75 A |
75A (Tc) |
- |
20 V |
140 W |
The IRF4905, a P-channel MOSFET, is widely embraced across various electronic circuits, demonstrating its efficiency in switching and current control. Its formidable capability endears it to numerous domains, showcasing its adaptability for both commercial and industrial purposes. A closer look at its extensive range of applications reveals how it integrates harmoniously with today's electronics.
Modern electronic devices often employ DC converters to maintain voltage regulation and power efficiency. The IRF4905 is basic to these converters, enabling precise voltage transformation and steady performance. With its ability to manage high currents and voltages efficiently, it serves as a reliable asset for you seeking to enhance power management and thermal dynamics, leveraging the MOSFET's notable attributes for optimal solutions.
The world of audio equipment prioritizes sound quality and amplification, and the IRF4905 plays a key role in elevating audio fidelity. Facilitating efficient power amplification, it broadens the dynamic range of sound systems, resulting in clearer and more impactful audio output. Integrating such components empowers you to craft richer auditory experiences and ensure device sustainability, supported by exceptional heat management features.
In industrial applications, mostly motor drives, the IRF4905 delivers sturdy control over electric motors. It supports efficient switching, which minimizes energy waste and boosts performance amidst diverse load demands. This functionality proves active in sectors demanding consistent performance and efficiency, contributing to decreased operational expenses and longer equipment life.
As renewable energy sources like solar and wind gain traction, the IRF4905 emerges as a valuable component in these systems. Its high efficiency and low conduction losses are key in optimizing the conversion of natural energy into useful electrical power. Such applications mirror the global shift towards sustainable energy practices, emphasizing environmental consciousness and economic feasibility.

Emerging from Siemens Semiconductors in 1999, Infineon Technologies marked a transformative phase within the semiconductor industry. This key transition set Infineon on a course toward becoming a leader in technological innovation. Drawing from Siemens' extensive expertise, Infineon embarked on a journey to develop sophisticated microelectronics solutions that serve a wide array of applications.
With a strategic emphasis on research and development, Infineon has persistently brought forth high-performance solutions. This commitment is evident in their delivery of both logic and discrete products, responding to the dynamic and evolving needs of various sectors. Infineon Technologies presents an expansive range of logic and discrete semiconductor offerings, thoughtfully crafted to align with the demands of advancing technology. Their array includes power-efficient devices and cutting-edge integrated circuits.
Infineon's products have found applications across multiple industries, addressing the unique requirements of automotive, industrial, and consumer electronics sectors. Their relentless pursuit of innovation has driven noteworthy progress in energy efficiency and miniaturization—dynamic aspects considered in today's technological environment.
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The IRF4905, housed in a TO-220AB package, stands out as a P-Channel MOSFET admired for its prowess in swift switching applications, thanks to its exceptionally low on-resistance. This characteristic renders it exceptionally fitting for optimizing power management and motor control systems, where reducing power loss and managing heat are of the essence. Curbing resistive losses, boosts the overall efficiency of electronic circuits, especially in scenarios where conserving energy is a guiding principle. Practically, you can capitalize on this feature to craft designs with enhanced thermal regulation and bolstered reliability.
The IRF4905 operates as a P-Channel MOSFET, conducting current mainly through holes. It incorporates an N-type body and substrate paired with a P-type drain and source, setting it apart from N-Channel MOSFETs, which typically conduct via electrons. This structural distinction allows the IRF4905 to be effectively employed in roles involving switching power supplies and reverse polarity protection. A sophisticated grasp of its configuration helps in designing circuits that demand specific voltage and current profiles, granting yous the adaptability to navigate intricate electronic challenges with bespoke solutions.
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