
IRLML2502 is designed with a focus on efficiency and reliability. It offers an ultra-low on-resistance, which makes it perfect for situations where reducing power loss is a priority. This N-Channel MOSFET is commonly used in applications that require quick switching and stable performance under various conditions. The advanced technology behind this component ensures that it performs well, even in compact designs, thanks to its small footprint. The MOSFET's rugged construction allows it to handle demanding environments, providing consistent performance across a range of applications.
Its compact Micro3™ package is particularly useful for situations where space is tight. If you’re working on a project where space is limited—like in portable electronics or PCMCIA cards—this MOSFET could be an ideal fit. The low profile of the package makes it easy to integrate into slim devices while still maintaining good thermal management, which helps keep the device cool and operational over time.




This MOSFET is designed with an ultra-low on-resistance, which helps reduce power loss during operation. You’ll find this useful when working on projects that need efficient power management.
The IRLML2502 is an N-Channel MOSFET, meaning it controls current by applying a positive voltage to the gate. This type of MOSFET is widely used for switching and amplification in various circuits.
Its small SOT-23 footprint makes it easy to integrate into compact designs. This is especially useful if you're working with space-constrained applications or need a lightweight component.
With a low profile of less than 1.1mm, this MOSFET fits well into slim devices. This feature is ideal for portable electronics and applications where every bit of space matters.
The IRLML2502 is available in tape and reel packaging, making it convenient for automated production lines. This ensures ease of handling and placement during manufacturing.
The MOSFET’s fast switching capability allows for quick transitions between on and off states. You’ll find this feature valuable when working on circuits that require high-speed operation.
It utilizes a planar cell structure that enhances its Safe Operating Area (SOA). This ensures reliable operation under varying conditions, helping you avoid potential damage from excessive currents or voltages.
This MOSFET is widely available through distribution partners, which means you won’t have trouble sourcing it for your projects. It’s a reliable choice with broad availability.
The IRLML2502 has been qualified following JEDEC standards, so you can trust its reliability and performance for long-term use in various applications.
Its silicon design is optimized for applications that require switching below 100kHz. This makes it an excellent option for lower-frequency switching circuits.
The IRLML2502 comes in an industry-standard surface-mount package, which makes it easy to work with in most designs, ensuring compatibility with existing systems and components.
Technical specifications, attributes, parameters, and comparable parts for Infineon Technologies' IRLML2502TR.
| Type | Parameter |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | Yes |
| Transistor Element Material | Silicon |
| Current - Continuous Drain (Id) @ 25℃ | 4.2A Ta |
| Number of Elements | 1 |
| Operating Temperature (Max.) | 150°C |
| Packaging | Cut Tape (CT) |
| Series | HEXFET® |
| Published | 2003 |
| JESD-609 Code | e3 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | High Reliability |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (°C) | 260 |
| Time @ Peak Reflow Temp (s) | 30 |
| JESD-30 Code | R-PDSO-G3 |
| Qualification Status | Not Qualified |
| Configuration | Single with Built-in Diode |
| Operating Mode | Enhancement Mode |
| FET Type | N-Channel |
| Transistor Application | Switching |
| Rds On (Max) @ Id, Vgs | 45mΩ @ 4.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
| Drain to Source Voltage (Vdss) | 20V |
| JEDEC-95 Code | TO-236AB |
| Drain Current-Max (Abs) (ID) | 4.2A |
| Drain-source On Resistance-Max | 0.045Ω |
| Pulsed Drain Current-Max (IDM) | 33A |
| DS Breakdown Voltage-Min | 20V |
| Power Dissipation-Max (Abs) | 1.25W |
| RoHS Status | Non-RoHS Compliant |


| Part Number | Description | Manufacturer |
| IRLML2502TR TRANSISTORS | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 | International Rectifier |
| IRLML2502PBF TRANSISTORS | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, Halogen and Lead-Free, MICRO-3 | International Rectifier |
| IRLML2502 TRANSISTORS | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 | International Rectifier |
| IRLML2502GTRPBF TRANSISTORS | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, Lead-Free, MICRO-3 | Infineon Technologies AG |
If you’re working with DC motors, the IRLML2502 can be a helpful addition. Its low on-resistance and fast switching speed make it great for controlling motor speed and efficiency. You’ll find that it can handle the demands of motor applications, keeping performance smooth and consistent.
The IRLML2502 is also a good choice when it comes to inverters. Because of its quick switching capabilities, it helps in efficiently converting DC to AC. You’ll notice this MOSFET works well in setups where you need reliable performance over time.
For switch-mode power supplies (SMPS), this MOSFET offers the low power loss and high efficiency you might need. Its low profile and compact package make it easy to integrate into SMPS designs, especially when you’re dealing with tight spaces.
In lighting applications, the IRLML2502 can help control the power going to LEDs or other light sources. You’ll find its efficiency and ability to handle higher currents useful when working with both small and large lighting systems.
The MOSFET’s low on-resistance and high current capabilities make it a strong choice for load switches. Whether you’re controlling power to different parts of a device or switching between loads, this component ensures smooth operation.
If you’re designing battery-powered devices, the IRLML2502 offers the efficiency you need to extend battery life. Its low power loss means that your device can run longer on a single charge, making it ideal for portable electronics or other battery-operated systems.

Infineon Technologies, formerly known as Siemens Semiconductor, brings a wealth of experience to the table. With their focus on innovation and adaptability, Infineon has become a leading provider of microelectronic components. Their wide range of products is designed to meet the needs of various industries, from consumer electronics to industrial applications. This MOSFET benefits from Infineon’s commitment to high-quality manufacturing and product development. The company continues to evolve in the ever-changing microelectronics industry, offering components that meet the demands of modern technology. Their extensive product portfolio includes not just integrated circuits but also discrete semiconductor devices, ensuring you can find solutions tailored to your project’s specific requirements
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