on October 16th 31,905

The BS170 N-Channel MOSFET: Pinout and Equivalents

The BS170 N-channel MOSFET stands as a testament to modern semiconductor advancements, mainly known for its efficiency, versatility, and reliability. Packaged in a compact TO-92 form, this MOSFET offers remarkable switching speeds and handles currents up to 500mA, making it ideal for various applications like high-speed switching, amplification, and low-voltage operations. Whether it's powering battery-operated devices or driving small motors, the BS170 plays a major role in enhancing the performance and efficiency of electronic systems. In this article, we will explore its key applications, technical attributes, and how it integrates seamlessly into diverse designs.

Catalog

BS170 Overview

The BS170, an N-channel MOSFET boasting a TO-92 package, exemplifies the pinnacle of modern semiconductor innovation. Utilizing Fairchild Semiconductor's cutting-edge high-density DMOS process, it manifests impressively low resistance and reliable, swift switching capabilities. These characteristics endear it to a multitude of applications. For instance, it adeptly manages currents up to 500mA and performs high-speed operations within a remarkable 7 nanoseconds. Therefore, it becomes an ideal choice for portable devices and battery-powered equipment, proving that advanced technology can significantly enrich our daily lives.

In the world of switching applications, the BS170 stands out due to its adeptness at managing high currents with minimal power loss. Its alert response time promotes exceptional efficiency, an active trait for devices demanded to execute rapid on-off cycles. Leveraging this MOSFET in such scenarios elevates operational efficiency similar to how precise industrial control systems amplify productivity.The BS170's exceptional switching speed, peaking at 7 nanoseconds, solidifies its role in high-speed applications. For example, in communication systems where swift data transfer is requisite, the MOSFET’s rapid-switching prowess ensures reduced latency and augments performance reliability. This capability mirrors the optimization of workflow processes required in competitive business landscapes.

Serving as an amplifier, the BS170 caters to audio amplification needs, delivering clear and precise sound quality. In addition, it excels in general signal amplification, bolstering weak signals without substantial noise or distortion. This function resembles enhancing clarity in team communications, ensuring that instructions are comprehensible and tasks are executed with precision. The BS170 proves remarkably effective in low voltage and current applications, such as small servo motor control and power MOSFET gate driving. Its reliability in these roles can be likened to finely calibrated instruments in scientific experiments that demand precision and minimal error margins, ensuring tasks are meticulously accomplished without room for mistakes.

BS170 Pinout Diagram

BS170 CAD Representation

Schematic Symbol

PCB Footprint

3D Visualization

BS170 Attributes

Feature	Description
Package	TO-92
Transistor Type	N-Channel
Drain to Source Voltage (Vds)	60V (Maximum)
Gate to Source Voltage (Vgs)	±20V (Maximum)
Continuous Drain Current (Id)	500mA (Maximum)
Pulsed Drain Current (Id)	500mA (Maximum)
Power Dissipation (Pd)	830mW (Maximum)
Gate Threshold Voltage (Vgs(th))	0.8V (Minimum)
Storage & Operating Temperature	-55°C to +150°C
Pb-Free	Yes
Low Offset and Error Voltage	Yes
Easily Driven Without Buffer	Yes
High-Density Cell Design	Minimizes ON-state Resistance (RDS(ON))
Voltage Controlled Small Signal Switch	Yes
High Saturation Current Capability	Yes
Rugged and Reliable	Yes
Fast Switching Time (TON)	4ns

Technical Details

Type	Value
Factory Lead Time	11 Weeks
Contact Plating	Copper, Silver, Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Number of Pins	3
Supplier Device Package	TO-92-3
Weight	4.535924g
Current - Continuous Drain (Id) @ 25℃	500mA Ta
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	830mW Ta
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2005
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	5Ohm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	60V
Current Rating	500mA
Base Part Number	BS170
Voltage	60V
Element Configuration	Single
Current	5A
Power Dissipation	830mW
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	40pF @ 10V
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	±20V
Continuous Drain Current (ID)	500mA
Threshold Voltage	2.1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Input Capacitance	24pF
Drain to Source Resistance	5Ohm
Rds On Max	5Ω
Nominal Vgs	2.1V
Height	5.33mm
Length	5.2mm
Width	4.19mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

BS170 Substitutes

Part Number	Description	Manufacturer
ND2406L-TR1TRANSISTORS	Small Signal Field-Effect Transistor, 0.23A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-92, 3 PIN	Vishay Siliconix
BSN20BK- TRANSISTORS	Small Signal Field-Effect Transistor, 0.265A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	Nexperia
VN1310N3P015TRANSISTORS	Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Supertex Inc
VN1710LP018TRANSISTORS	Small Signal Field-Effect Transistor, 0.22A I(D), 170V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92	Supertex Inc
MPF6659TRANSISTORS	2000mA, 35V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92	Motorola Mobility LLC
SST4118T1TRANSISTORS	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, PLASTIC PACKAGE-3	Calogic Inc
BS208-AMMOTRANSISTORS	TRANSISTOR 200 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, FET General Purpose Small Signal	NXP Semiconductors
SD1106DDTRANSISTORS	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Topaz Semiconductor
BSS7728E6327TRANSISTORS	Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN	Infineon Technologies AG
2SK1585-T2TRANSISTORS	Small Signal Field-Effect Transistor, 1A I(D), 16V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, MINI MOLD, SC-62, 3 PIN	NEC Electronics Group

BS170 Equivalents

2N7000

2N7002

VQ1000J

VQ1000P

IRLML2502

Exploring the Applications of BS170

The BS170 MOSFET demonstrates remarkable utility in both switching and amplification functions, making it a basic component in diverse electronic designs.

Switching Applications

Handling loads up to 500mA, the BS170 is well-suited for driving devices such as relays, LEDs, and small motors. This load-handling capacity is mostly advantageous in microcontroller-based projects, notably those using platforms like Arduino and Raspberry Pi. The simplicity of controlling the BS170 with low-voltage signals is in harmony with the output characteristics of these microcontrollers. This congruence allows for smooth integration without necessitating extra amplification circuits. In practical applications, you can often turn to the BS170 for interfacing with relays, devising methods to switch higher current loads with minimal strain on the microcontroller. Similarly, in managing LED arrays, the BS170 excels in power distribution, ensuring consistent and steady performance.

Amplification Applications

The BS170 is also invaluable in amplification scenarios, including audio circuits and low-level signal amplification. Its operation with minimal gate voltage enhances efficiency, active for precise control over output signals. This efficiency is mostly cherished in audio devices where clarity and fidelity cannot be compromised. Moreover, the BS170's ability to amplify low-level signals finds notable application in sensitive sensor tasks. For instance, in environmental monitoring systems, the need to amplify faint signals from temperature or humidity sensors without considerable noise is risky. This amplification ensures precise data representation, aiding more informed decision-making.

Comparative Analysis with Bipolar Junction Transistors (BJTs)

Both MOSFETs and BJTs control current flow in circuits, yet the BS170 underlines distinct differences in control mechanisms. Unlike BJTs, which require a continuous current at the base to modulate the collector-emitter current, the BS170 needs only a small gate voltage. This attribute diminishes power consumption and simplifies control logic circuits.

Microcontroller Outputs

Microcontrollers frequently require an intermediary to drive various loads, given their limited logic level outputs. The BS170 addresses this need by accepting low-voltage inputs and delivering higher current outputs. This extension of capability is somewhat like using an adapter to link incompatible devices, thereby broadening the operational scope of microcontrollers.

IC Outputs

When interfacing integrated circuits with peripherals, the BS170 acts as a buffer to minimize the load on sensitive IC outputs. This practice is commonly seen in electronics to foster the reliability of IC-based systems, ensuring they run smoothly without undue stress on components.

Signal Strengthening

The BS170's versatility shines in numerous low-power signal amplification applications. It proves useful in telemetry, small transmitter circuits, and analog signal magnification. Think of it as enhancing a weak Wi-Fi signal, where every boost counts for better connectivity.

Industrial Automation (e.g., Machine Controls, Light Barriers)

In industrial automation, the BS170’s robustness is ideal for machine control systems and light barriers. It efficiently switches high loads, ensuring smooth operation active in reducing downtime and increasing productivity. You can rely on such components to keep systems running optimally.

Battery-Powered Devices

For battery-powered devices, the BS170's low power consumption and high efficiency are required. It extends battery life by minimizing energy wastage.

Solid-State Relays

Incorporated into many solid-state relays, the BS170 handles substantial loads with minimal mechanical wear, offering silent operation and higher reliability. This quiet and dependable function is a remarkable asset in environments like medical devices, where mechanical switching noise is undesirable.

Device Drivers (e.g., Relays, Solenoids, Lamps)

The BS170 is basic to device drivers for relays, solenoids, and lamps. Its dependable switching capabilities are useful for maintaining operational integrity, mostly in automotive applications where robustness and durability are highly valued.

Logic-Level Interfaces (TTL/CMOS)

Facilitating interaction between TTL and CMOS logic families, the BS170 ensures seamless communication across different logic circuits. This integration is active in mixed-technology designs, where diverse component compatibility and system performance are dominant.

Utilizing the BS170 for LED Control

The BS170 MOSFET is the key to switching an LED in this ultimate setup. To establish this setup, connect the Gate and Drain terminals to a 5V DC power source and attach the LED to the Source terminal. When a voltage pulse is applied to the Gate, the MOSFET is activated, allowing current to flow from the Drain to the Source, turning on the LED. Removing the pulse ceases the current flow, extinguishing the LED.

The BS170, an N-channel MOSFET, operates based on the voltage differential between its Gate and Source terminals. Key operational facts include that when the Gate-to-Source voltage (V_GS) exceeds around 2V, the MOSFET enters its conductive state. This property ensures efficient switching with minimal power loss. Because of this efficiency, it suits low-voltage applications like toggling an LED.

This ultimate circuit can evolve into various practical applications. For example, integrating a microcontroller to regulate the Gate pulse. This allows the LED to blink at specific frequencies or display complex patterns. Such integrations are universal in electronic projects, from basic indicators to sophisticated signaling systems. Designing circuits with MOSFETs like the BS170 often demands iterative testing to perfect the Gate voltage for reliable performance. Ensuring secure connections and a stable power supply significantly boosts circuit reliability.

Packaging for BS170

Manufacturer Information

ON Semiconductor stands as a globally influential entity in the diverse dominions of power, signal management, logic, and custom devices. They cater to sectors spanning automotive, consumer electronics, and healthcare. With a strategic presence that includes facilities and offices across North America, Europe, and Asia, and headquarters located in Phoenix, Arizona, ON Semiconductor is poised to meet the evolving demands of the industry.

ON Semiconductor's commitment to technological advancements is evident in its extensive portfolio. Their products form the backbone of contemporary automotive designs, enhancing vehicle safety, connectivity, and energy efficiency. This translates into tangible benefits such as fewer accidents and a smoother driving experience.

Their signal management solutions play a main role in improving consumer electronics, ensuring more reliable and advanced experiences. Imagine the seamless operation of your smart home devices, all thanks to these innovations. In the medical sector, ON Semiconductor's custom devices facilitate advanced healthcare technologies, contributing to improved patient outcomes and streamlined medical operations—making treatments more effective and less invasive.

Comparable Components

Part Number

Manufacturer

Mount

Package / Case

Drain to Source Voltage (Vdss)

Continuous Drain Current (ID)

Current - Continuous Drain (Id) @ 25°C

Threshold Voltage

Rds On Max

Gate to Source Voltage (Vgs)

Power Dissipation

Power Dissipation-Max

View Compare

BS170

ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

60V

500 mA

500mA (Ta)

2.1 V

5 Ω

20 V

830 mW

830mW (Ta)

BS170

BS270

ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

-

400 mA

400mA (Ta)

2.1 V

-

20 V

630 mW

625mW (Ta)

BS170 VS BS270

2N7000

ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

60V

200 mA

200mA (Ta)

2.1 V

5 Ω

20 V

400 mW

400mW (Ta)

BS170 VS 2N7000