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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Single2SB808G-SPA
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2SB808G-SPA - onsemi

Manufacturer Part Number
2SB808G-SPA
Manufacturer
onsemi
Allelco Part Number
32D-2SB808G-SPA
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
4,220 pcs available, New & Original
Parts Description
SILICON EPITAXIAL PLANAR
Package
Bulk
Data sheet
-
RoHs Status
 
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In stock: 4220

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Specifications

2SB808G-SPA Tech Specifications
onsemi - 2SB808G-SPA technical specifications, attributes, parameters and parts with similar specifications to onsemi - 2SB808G-SPA

Product Attribute Attribute Value
Manufacturer onsemi
Series *
Product Attribute Attribute Value
Package Bulk

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status Not applicable
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status Vendor Undefined

Frequently Asked Questions(FAQ)

How does the 2SB808G-SPA handle thermal dissipation in high-current switching applications, and what are the implications for PCB layout and heatsinking?
The 2SB808G-SPA is designed with a collector current (Ic) of up to 5A, which necessitates careful thermal management under sustained load. Its power dissipation rating is limited by internal junction-to-case thermal resistance; exceeding this can lead to thermal runaway or reduced reliability. In switching circuits operating near maximum Ic, a modest heatsink or adequate copper area on the PCB is often required to maintain junction temperature below recommended limits. Layout practices should minimize parasitic inductance and ensure low-impedance connections to reduce voltage stress and improve switching efficiency.
What is the typical base-emitter saturation voltage (Vbe(sat)) for the 2SB808G-SPA when driving a 2A load, and how does this impact power loss in linear regulator designs?
At a collector current of 2A, the Vbe(sat) of the 2SB808G-SPA typically ranges between 1.1V and 1.3V, depending on temperature and exact operating conditions. This results in a static power loss of approximately 2.2W to 2.6W, which must be managed through heatsinking or design trade-offs. In linear regulator configurations, this contributes directly to inefficiency, especially when input-output differentials are small. Engineers should evaluate whether alternative topologies or lower-dropout solutions are more appropriate for low-voltage applications.
Can the 2SB808G-SPA be used interchangeably with the 2SA808G-SPA in complementary push-pull amplifier stages, and what matching considerations apply?
Yes, the 2SB808G-SPA is part of a matched NPN-PNP pair with the 2SA808G-SPA, making it suitable for use in symmetrical push-pull configurations. However, even within the same series, slight variations in gain (hFE), Vceo, and switching speed require careful selection of matched transistor pairs. For optimal performance in audio or RF amplifiers, engineers should source both transistors from the same batch and verify hFE alignment across operating currents. Mismatched pairs can introduce distortion and imbalance in output waveforms.
What is the reverse transfer capacitance (Cob) effect in the 2SB808G-SPA, and how does it influence high-frequency stability in feedback networks?
The 2SB808G-SPA exhibits significant Cob due to its construction as a medium-power bipolar transistor, typically in the range of tens of picofarads. This capacitance, combined with the output impedance of the driven stage, can form an unintended pole in feedback loops above 1 MHz. In high-gain amplifier designs, this may lead to instability or oscillation if not compensated. Layout parasitics and feedback resistor values must be carefully evaluated to ensure phase margin remains sufficient across the bandwidth of interest.
How does the transition frequency (fT) of the 2SB808G-SPA compare with higher-speed BJTs like the 2SC5200, and what are the practical implications for digital switching at 500 kHz?
With a transition frequency (fT) of 30 MHz, the 2SB808G-SPA is significantly slower than devices such as the 2SC5200 (fT > 100 MHz). While 30 MHz exceeds the bandwidth requirement for 500 kHz switching, the device’s rise and fall times—influenced by internal charge storage—may result in noticeable delays and increased EMI during fast transitions. For PWM or motor control applications at this frequency, the 2SB808G-SPA can function adequately, but edge rates should be monitored, and snubber circuits considered to mitigate ringing.
What derating guidelines should be followed for long-term reliability when using the 2SB808G-SPA in automotive lighting control systems?
In automotive environments, where thermal cycling and elevated ambient temperatures are common, the 2SB808G-SPA should be derated by 30–50% from its rated collector current and power dissipation. Operating at 3A or below and limiting power dissipation to 7–8W (assuming case temperature ≤ 85°C) improves reliability and reduces failure risk. Thermal interface materials and conformal coatings may further enhance longevity. Derating ensures margin against parameter drift and transient overstress typical in vehicle electrical systems.
How does the package configuration of the 2SB808G-SPA affect mounting and soldering in high-volume production, and what reflow profile risks exist?
The 2SB808G-SPA uses a TO-220-style package, which allows surface-mount or through-hole assembly. In automated production, proper solder joint inspection is critical due to potential cold joints or bridging, especially in compact layouts. During reflow, peak temperatures should not exceed 260°C to avoid degradation of internal bonds. Prolonged exposure above 250°C for more than 30 seconds may compromise long-term reliability. Adherence to IPC standards for lead-free soldering ensures consistent yields and thermal performance.
Can the 2SB808G-SPA operate safely in continuous conduction mode (CCM) of a boost converter without additional current sensing, and what failure mechanisms might arise?
Yes, the 2SB808G-SPA can support CCM operation in boost converters, provided the duty cycle and inductor current are within safe limits. However, without current limiting, a fault condition such as shorted output could cause sustained overcurrent, pushing the transistor beyond its SOA (Safe Operating Area). This may result in secondary breakdown or metallization failure, particularly at elevated temperatures. Implementing current-sense feedback or soft-start circuitry is strongly recommended to protect the device and maintain system robustness.
What is the expected leakage current (Iceo) behavior of the 2SB808G-SPA at 100°C, and how does it affect turn-off time in high-side switching applications?
At 100°C, Iceo for the 2SB808G-SPA typically increases to several microamperes, depending on manufacturing variation. This leakage current, though small, contributes to residual collector current during turn-off, prolonging the device’s deactivation time. In high-side switches where rapid disconnection is required, this can increase shoot-through risk or energy dissipation in capacitive loads. Using active pull-down circuits or gate drivers with low impedance helps mitigate this effect and ensures clean switching transitions.
Is the 2SB808G-SPA suitable for use in Class D audio amplifiers, and what design constraints apply compared to dedicated MOSFET-based solutions?
The 2SB808G-SPA is technically capable of handling Class D amplifier output stages due to its high current capability, but its bipolar nature introduces higher conduction losses compared to power MOSFETs. Switching losses are also greater due to tail current during turn-off. While feasible in low-frequency Class D designs (e.g., below 200 kHz), efficiency suffers, and heat management becomes critical. A hybrid approach using the 2SB808G-SPA for discrete amplification may be acceptable only in cost-sensitive or legacy systems where MOSFET alternatives are unavailable.

Parts with Similar Specifications

The three parts on the right have similar specifications to onsemi 2SB808G-SPA

Product Attribute 2SB808G-SPA-AC 2SB815-6-TB-EX 2SB815-6-TB-E 2SB815-7-TB-E
Part Number 2SB808G-SPA-AC 2SB815-6-TB-EX 2SB815-6-TB-E 2SB815-7-TB-E
Manufacturer Sanyo onsemi onsemi onsemi
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Series - - - -

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Customer Reviews

Evaluation: 10 Articles

  • Oliv***arris
    May 7, 2026

    Reliable I/O expander. Works well in embedded control applications.

  • Jess***Jones
    Apr 17, 2026

    It offers good value for the price, and the specifications match the description. I’ve been using it for two days with no issues, and I’ll definitely buy it again if I need it in the future.

  • Mich***Smith
    Apr 17, 2026

    Shipping was on time, the component pins are neatly aligned, and I tested 10 of them with a multimeter—all readings were within the specified range. Highly recommended.

  • Aman***arris
    Apr 3, 2026

    It was great—the entire process, from placing the order to receiving the package, went very smoothly. The components were consistent, the price was fair, and I had a very pleasant shopping experience.

  • Mike***nch
    Apr 3, 2026

    Better than expected! The resistance and capacitance readings were spot-on, and it passed the test on the first try. The service was reliable, and the packaging was thoughtful—I highly recommend it.

  • Daic***K.
    Mar 23, 2026

    Very good. No issue after long time testing.

  • Kevi***.
    Mar 17, 2026

    Fast switching and stable output. Very satisfied with this IC

  • Daou***hekebkeb
    Jun 16, 2024

    I had a great experience purchasing items from Allelcoelec, I recommend

  • Uri ***al
    Jun 19, 2024

    Good comunication,
    Transpnt regarding the process and price.

  • Yaqu***l Ali
    Jun 19, 2024

    Providing reasonable prices, regular follow-up of orders, providing accurate and regular invoices, timely delivery of goods, excellent customer service and providing original goods and best quality materials.

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Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.
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onsemi

2SB808G-SPA

onsemi
32D-2SB808G-SPA

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