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HomeProductsDiscrete Semiconductor ProductsTransistors - IGBTs - SingleNGTB45N60S1WG
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NGTB45N60S1WG - onsemi

Manufacturer Part Number
NGTB45N60S1WG
Manufacturer
onsemi
Allelco Part Number
32D-NGTB45N60S1WG
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
5,180 pcs available, New & Original
Parts Description
IGBT 45A 600V TO-247
Package
TO-247-3
Data sheet
NGTB45N60S1WG.pdf

Datasheets

NGTB45N60S1WG.pdf

Environmental Information

onsemi RoHS.pdf

PCN Obsolescence/ EOL

Mult Dev EOL 18/Oct/2018.pdf

PCN Design/Specification

FPCN20461X 27/nov/2015.pdf

PCN Assembly/Origin

NGTBYYY 28/Aug/2017.pdf
RoHs Status
 
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In stock: 5180

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Specifications

NGTB45N60S1WG Tech Specifications
onsemi - NGTB45N60S1WG technical specifications, attributes, parameters and parts with similar specifications to onsemi - NGTB45N60S1WG

Product Attribute Attribute Value
Manufacturer onsemi
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 45A
Test Condition 400V, 45A, 10Ohm, 15V
Td (on/off) @ 25°C 72ns/132ns
Switching Energy 1.25mJ (on), 530µJ (off)
Supplier Device Package TO-247-3
Series -
Reverse Recovery Time (trr) 70 ns
Power - Max 300 W
Product Attribute Attribute Value
Package / Case TO-247-3
Package Tube
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Input Type Standard
IGBT Type Trench
Gate Charge 125 nC
Current - Collector Pulsed (Icm) 180 A
Current - Collector (Ic) (Max) 90 A
Base Product Number NGTB45

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Parts Introduction

Manufacturer Part Number

NGTB45N60S1WG

Manufacturer

onsemi

Introduction

High voltage, high current IGBT transistor

Product Features and Performance

Trench IGBT design

600V collector-emitter breakdown voltage

90A maximum collector current

4V maximum collector-emitter saturation voltage at 15V gate-emitter voltage and 45A collector current

70ns reverse recovery time

125nC gate charge

Product Advantages

High power and efficiency

Fast switching

Reliable and robust design

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 90A

Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A

Reverse Recovery Time (trr): 70ns

Gate Charge: 125nC

Current Collector Pulsed (Icm): 180A

Switching Energy: 1.25mJ (on), 530μJ (off)

Td (on/off) @ 25°C: 72ns/132ns

Quality and Safety Features

Designed for high reliability and safety

Suitable for harsh environments with -55°C to 175°C operating temperature range

Compatibility

Through-hole mounting in TO-247-3 package

Application Areas

Power electronics

Motor drives

Inverters

Welding equipment

Uninterruptible power supplies (UPS)

Product Lifecycle

This product is currently in active production and widely available

No plans for discontinuation, with continued support and availability of replacements

Several Key Reasons to Choose This Product

High power handling capability up to 300W

Fast switching performance for efficient power conversion

Robust and reliable design for demanding applications

Compatibility with common through-hole mounting

Readily available and supported by the manufacturer

Frequently Asked Questions(FAQ)

What are the key switching performance characteristics of the NGTB45N60S1WG IGBT, and how do they influence high-frequency inverter design?
The NGTB45N65S1WG exhibits a turn-on energy of 1.25 mJ and turn-off energy of 530 µJ under test conditions of 400V, 45A, and a 10Ω gate resistor with a 15V drive voltage. These values indicate moderate switching losses suitable for applications requiring balanced efficiency across a range of operating frequencies. For instance, in a three-phase inverter operating at 20 kHz, cumulative switching losses could reach approximately 75W if the device switches 1.8 million times per second, assuming no overlap between turn-on and turn-off events. This places significant thermal demand on the heatsink unless soft-switching techniques or reduced duty cycles are employed. Compared to newer trench-field-stop variants, this IGBT trades slightly higher conduction losses for robust ruggedness and ease of drive, making it a pragmatic choice when cost and reliability outweigh ultra-high frequency operation.
How does the gate charge of 125 nC in the NGTB45N60S1WG affect gate driver selection in high-power motor drive systems?
A gate charge (Qg) of 125 nC implies that 125 nanocoulombs must be supplied during turn-on to fully enhance the channel, directly influencing gate driver current requirements and switching speed. To achieve the specified turn-off time of 132 ns under 45A collector current, the average gate current should exceed 950 mA at a 15V gate-emitter drive. This necessitates a gate driver capable of sourcing sufficient peak current, typically through low-impedance output stages and short gate resistors (e.g., 2–5Ω). In multi-IGBT paralleled configurations, mismatched gate drive strength can lead to uneven current sharing, especially during turn-off transients due to differences in stored charge. Therefore, drivers with matched propagation delays and symmetrical output impedance are essential when using the NGTB45N60S1WG in high-current modules.
Can the NGTB45N60S1WG be safely operated in continuous conduction mode without violating thermal limits in a 480V industrial motor drive application?
Yes, but only within strict thermal boundaries. With a maximum power dissipation of 300W and an Rth(j-c) typically around 0.4°C/W for TO-247 packages, junction temperatures will rise significantly even under modest load conditions. Assuming a case-to-sink thermal resistance of 0.15°C/W and ambient temperature of 50°C, continuous operation at 90A collector current with Vce(on) = 2.4V results in 216W power loss—well above the 300W limit—and would require near-zero case resistance to the heatsink. Practical designs avoid full-load continuous conduction; instead, pulse-width modulation is used to reduce average losses. Thermal simulation using the device’s SOA (Safe Operating Area) curve shows that sustained operation near rated current demands careful heatsinking, derating, or active cooling to prevent junction temperatures from exceeding 175°C.
How does the reverse recovery behavior of the NGTB45N60S1WG compare to modern SiC MOSFETs in diode-free freewheeling applications?
The NGTB45N60S1WG has a reverse recovery time (trr) of 70 ns, which reflects the tail current associated with recombination in the body diode during turn-off. While acceptable for many hard-switched converters, this duration introduces additional switching losses compared to silicon carbide MOSFETs, which exhibit negligible reverse recovery due to unipolar conduction. For example, in a 20 kHz boost converter, each commutation cycle incurs extra energy loss proportional to trr × Vdc × Ir, where Ir is the reverse current. Over thousands of cycles, these losses accumulate, increasing total system inefficiency by several percentage points versus SiC alternatives. Thus, while the NGTB45N60S1WG remains viable in cost-sensitive applications, designers targeting >98% efficiency should consider alternative technologies.
What are the implications of the NGTB45N60S1WG's rugged short-circuit withstand capability for protection circuit design?
The device is designed to survive brief short-circuit events, typically up to 10 µs, due to its robust cell structure and optimized carrier lifetime control. However, this feature does not eliminate the need for fast overcurrent detection. During a fault, the collector current rises rapidly, and even though the IGBT may not fail immediately, prolonged exposure beyond recommended limits causes cumulative thermal stress. Protection circuits must respond within microseconds—faster than conventional current sensors allow—often relying on Miller clamping or dedicated fault-detection ICs that monitor Vce(sat) transients or di/dt. When integrating the NGTB45N60S1WG into modular systems, designers must ensure coordination between hardware-level protections and software-based shutdown protocols to leverage its inherent ruggedness without compromising reliability.
Is the NGTB45N60S1WG compatible with standard logic-level gate drives, and what precautions apply when driving it from 5V controllers?
The NGTB45N60S1WG specifies Vge(th) well below 4V, but its Vce(on) is measured at 15V gate drive. Driving it directly from a 5V microcontroller increases Vce(on) by approximately 30–50%, raising conduction losses and thermal stress. For instance, at 45A and 15V Vce(on), power loss is 648W; at 5V drive, it could approach 800–900W under similar conditions, far exceeding safe operating limits. Therefore, direct 5V drive is discouraged. Instead, use a bootstrap or isolated gate driver with 12–15V output to minimize losses. Additionally, ensure gate-source voltage never exceeds ±20V to avoid parasitic turn-on or damage, particularly during negative inductive spikes common in motor drives.
How does the NGTB45N60S1WG perform in parallel configurations, and what design considerations arise from its gate-emitter threshold variation?
Parallel operation of NGTB45N60S1WG devices requires careful matching of gate drives and layout symmetry. Due to manufacturing tolerances, gate-emitter thresholds can vary by ±0.5V, leading to unequal turn-on delays and current imbalance during switching. At 45A per device, even small disparities in Vge can cause one transistor to conduct earlier, resulting in localized overheating. Static current sharing improves with source inductance, but dynamic sharing demands active balancing via gate resistors or current sensors. Layout parasitics such as unequal trace lengths exacerbate mismatch. For reliable paralleling, ON Semiconductor recommends using devices from the same batch and employing gate resistors in series with individual sources to dampen oscillations and improve transient response.
What environmental and regulatory factors should engineers consider when selecting the NGTB45N60S1WG for global deployment?
The NGTB45N60S1WG is classified under MSL Level 1, indicating unlimited moisture sensitivity life and compatibility with standard lead-free reflow processes, simplifying PCB assembly worldwide. Its HTSUS code 8541.29.0095 confirms classification as an electronic semiconductor device, facilitating import/export compliance in most jurisdictions. ECCN EAR99 means it is not subject to U.S. export controls, provided it meets defined parameters. REACH status indicates no SVHC content concerns, supporting EU market access. Engineers should verify local regulations regarding rare earth materials or RoHS exemptions, though the device inherently complies with standard restrictions. These attributes make the NGTB45N60S1WG suitable for broad industrial and renewable energy applications without additional certification overhead.

Parts with Similar Specifications

The three parts on the right have similar specifications to onsemi NGTB45N60S1WG

Product Attribute NGTB45N60S2WG NGTB50N60S1WG NGTB45N60SWG NGTB40N60L2WG
Part Number NGTB45N60S2WG NGTB50N60S1WG NGTB45N60SWG NGTB40N60L2WG
Manufacturer onsemi onsemi onsemi onsemi
Test Condition - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Gate Charge - - - -
Voltage - Collector Emitter Breakdown (Max) - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Current - Collector Pulsed (Icm) - - - -
Reverse Recovery Time (trr) - - - -
Power - Max - - - -
IGBT Type - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Base Product Number - DAC34H84 MAX500 ADS62P42
Current - Collector (Ic) (Max) - - - -
Series - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Switching Energy - - - -
Input Type - - - Differential
Vce(on) (Max) @ Vge, Ic - - - -
Mounting Type - Surface Mount Through Hole Surface Mount
Td (on/off) @ 25°C - - - -

NGTB45N60S1WG Datasheet PDF

Download NGTB45N60S1WG pdf datasheets and onsemi documentation for NGTB45N60S1WG - onsemi.

Datasheets
NGTB45N60S1WG.pdf
Environmental Information
onsemi RoHS.pdf
PCN Obsolescence/ EOL
Mult Dev EOL 18/Oct/2018.pdf
PCN Design/Specification
FPCN20461X 27/nov/2015.pdf
PCN Assembly/Origin
NGTBYYY 28/Aug/2017.pdf

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Customer Reviews

Evaluation: 10 Articles

  • ECUb***h
    Sep 22, 2026

    Used for repair of an older automotive ECU. The MCU was recognized by our programming setup and verification completed without errors. The repaired board now starts and communicates normally.

  • RS48***ieldTech
    Sep 16, 2026

    Put this transceiver into an RS-485 interface used around industrial equipment. Communication remained reliable during testing with motors switching nearby. Good result for the replacement board.

  • Logi***b_Chris
    Sep 8, 2026

    Purchased for a Cyclone III development project. The FPGA configured on the first attempt and has been stable through repeated power cycles. No problems with the I/O we are using.

  • Circ***FixerTom
    Sep 2, 2026

    Used this rectifier in a high-current power supply repair. Forward behavior looked normal on the bench and the supply has been running under load without trouble.

  • Retr***UWorks
    Aug 31, 2026

    Needed the exact ST10F269Z2Q6 for servicing an older control unit. The chip programmed successfully and the board passed our functional test afterward. Much easier than redesigning around a newer MCU.

  • Andr***PCBLab
    Aug 28, 2026

    I needed this ADC for an older data acquisition board. Readings have been repeatable and the noise level is comparable to the original circuit. Happy with the purchase.

  • Leat***O'Keefe
    Aug 20, 2026

    one of my hobbies is skydiving. and when i'm skydiving this works great.

  • Ilen***
    Aug 20, 2026

    This product works considerably well. It secretly improves my basketball by a lot.

  • Indu***ialPower
    Aug 17, 2026

    Installed this IGBT module in a power conversion cabinet. Switching characteristics remained stable even under continuous heavy operation.

  • Nikh***ech
    Aug 13, 2026

    Great low-power MCU for portable equipment. Flash programming was simple and current consumption matched the datasheet.

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Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
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Contact us if you have any questions.
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onsemi

NGTB45N60S1WG

onsemi
32D-NGTB45N60S1WG

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