Manufacturer Part Number
CSD86330Q3D
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Product Features and Performance
2 N-Channel (Half Bridge) MOSFET
Drain to Source Voltage (Vdss) of 25V
RDS(on) of 9.6mOhm at 14A, 8V
Continuous Drain Current (ID) of 20A at 25°C
Input Capacitance (Ciss) of 920pF at 12.5V
Logic Level Gate with Vgs(th) of 2.1V at 250μA
Gate Charge (Qg) of 6.2nC at 4.5V
Operating Temperature Range of -55°C to 150°C
Power Dissipation of 6W
Product Advantages
Low RDS(on) for high efficiency
High current capability
Logic level gate for easy drive
Wide temperature range
Key Technical Parameters
Transistor Type: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss): 25V
RDS(on) (Max) @ Id, Vgs: 9.6mOhm @ 14A, 8V
Continuous Drain Current (ID) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 12.5V
Vgs(th) (Max) @ Id: 2.1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting Type
8-LSON (3.3x3.3) Package
Application Areas
Suitable for a wide range of power management and switching applications
Product Lifecycle
Currently available
No information on discontinuation or replacement
Several Key Reasons to Choose This Product
Low RDS(on) for high efficiency
High current capability up to 20A
Logic level gate for easy drive
Wide operating temperature range of -55°C to 150°C
Compact 8-LSON (3.3x3.3) package
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