Manufacturer Part Number
CSD87313DMST
Manufacturer
Texas Instruments
Introduction
High-performance NexFET dual N-channel MOSFET with low on-resistance and high switching speed.
Product Features and Performance
Dual N-channel MOSFET in 8-WSON package
Low on-resistance of 2.6 mΩ (max) per channel
High switching speed with low gate charge of 28 nC (max)
Operating temperature range of -55°C to 150°C
Power rating of 2.7 W
Product Advantages
Excellent thermal management due to compact package
High power density and efficiency
Reliable performance in harsh environments
Key Technical Parameters
Drain-to-source voltage (Vdss): 30 V
Input capacitance (Ciss): 4290 pF (max) at 15 V
Threshold voltage (Vgs(th)): 1.2 V (max) at 250 A
Gate charge (Qg): 28 nC (max) at 4.5 V
Quality and Safety Features
RoHS3 compliant
Reliable and stable performance
Designed for high-reliability applications
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Power management circuits
Motor control
White goods and industrial applications
Product Lifecycle
Currently in production
No known discontinuation plans
Replacement or upgrade options available from Texas Instruments
Several Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
High switching speed for fast and responsive power control
Reliable and stable operation in harsh environments
Compact and space-saving package design
Compatibility with a wide range of power management and control applications
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