Manufacturer Part Number
CSD87384M
Manufacturer
Texas Instruments
Introduction
High-performance MOSFET array in a compact, thermally-enhanced package
Product Features and Performance
2 N-Channel MOSFET transistors in a half-bridge configuration
Low on-resistance (RDS(on)) of 7.7 mOhm at 25A, 8V
High continuous drain current of 30A at 25°C
Low input capacitance (Ciss) of 1150 pF at 15V
Low gate charge (Qg) of 9.2 nC at 4.5V
Logic-level gate threshold voltage (Vgs(th)) of 1.9V at 250A
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent thermal performance in a compact package
Efficient power conversion in high-density power electronics
Simplified gate drive requirements with logic-level gate
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Maximum Power Dissipation: 8W
Input Capacitance (Ciss): 1150 pF at 15V
Gate Charge (Qg): 9.2 nC at 4.5V
Gate Threshold Voltage (Vgs(th)): 1.9V at 250A
Quality and Safety Features
RoHS3 compliant
Thermally-enhanced 5-LGA package
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
DC/DC converters
Product Lifecycle
This product is an active, in-production part
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent thermal performance and power handling capability
Low on-resistance and input capacitance for efficient power conversion
Logic-level gate threshold for simplified gate drive design
Compact, thermally-enhanced package for high-density power electronics
Wide operating temperature range for diverse application environments
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