Manufacturer Part Number
LM5109BSDX
Manufacturer
Texas Instruments
Introduction
The LM5109BSDX by Texas Instruments is a high voltage gate driver designed for driving N-Channel MOSFETs in a half-bridge configuration.
Product Features and Performance
High Voltage Gate Driver
Designed for N-Channel MOSFETs
Half-Bridge Driven Configuration
Independent Dual Channels
Non-Inverting Input Type
Peak Output Current 1A Source and Sink
Integrated Bootstrap Diode
Fast Rise and Fall Times (15ns typical)
Under-Voltage Lockout (UVLO)
Product Advantages
Optimized for high-efficiency power conversions
Compact 8-WDFN Exposed Pad Package for efficient thermal performance
Robust operation with High Side Voltage up to 108V (Bootstrap)
Wide operating temperature range from -40°C to 125°C
Key Technical Parameters
Supply Voltage Range: 8V to 14V
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Bootstrap Voltage Max: 108V
Rise/Fall Time Typical: 15ns/15ns
Peak Output Current: 1A Source, 1A Sink
Operating Temperature Range: -40°C to 125°C
Quality and Safety Features
Thermal Shutdown
Under-Voltage Lockout (UVLO)
Cross-Conduction Prevention Logic
Compatibility
Suitable for driving N-Channel Power MOSFETs
Application Areas
Switch Mode Power Supplies (SMPS)
Motor Controllers
DC to AC inverters
Power Inverters for Renewable Energy
Product Lifecycle
Obsolete
Replacements or Upgrades may be available (check with Texas Instruments)
Several Key Reasons to Choose This Product
Proven reliability from Texas Instruments
Designed specifically for high-voltage applications with 108V max bootstrap voltage
Ideal for compact, high-performance power management solutions
Thermal protection and UVLO for improved safety and durability
Effective gate drive solution with 1A peak current capability for robust power MOSFET switching
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