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HomeProductsIntegrated Circuits (ICs)Linear - Amplifiers - Instrumentation, OP Amps, Buffer AmpsTLV333IDR
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TLV333IDR - Texas Instruments

Manufacturer Part Number
TLV333IDR
Manufacturer
Texas Instruments
Allelco Part Number
32D-TLV333IDR
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
25,275 pcs available, New & Original
Parts Description
IC OPAMP ZERO-DRIFT 1 CIRC 8SOIC
Package
8-SOIC
Data sheet
TLV333IDR.pdf
RoHs Status
ROHS3 Compliant
Our certification
In stock: 25275
  • Unit Price: $0.869
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
1+ $0.869 $0.87
10+ $0.727 $7.27
30+ $0.649 $19.47
100+ $0.56 $56.00
500+ $0.521 $260.50
1000+ $0.503 $503.00
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

TLV333IDR Tech Specifications
Texas Instruments - TLV333IDR technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments - TLV333IDR

Product Attribute Attribute Value
Manufacturer Texas Instruments
Voltage - Supply Span (Min) 1.8 V
Voltage - Supply Span (Max) 5.5 V
Voltage - Input Offset 2 µV
Supplier Device Package 8-SOIC
Slew Rate 0.16V/µs
Series -
Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tape & Reel (TR)
Product Attribute Attribute Value
Output Type Rail-to-Rail
Operating Temperature -40°C ~ 125°C
Number of Circuits 1
Mounting Type Surface Mount
Gain Bandwidth Product 350 kHz
Current - Supply 17µA
Current - Input Bias 70 pA
Base Product Number TLV333
Amplifier Type Zero-Drift

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Parts Introduction

TLV333IDR Image
TLV333IDR (1)

Manufacturer Part Number

TLV333IDR

Manufacturer

Texas Instruments

Introduction

The TLV333IDR is a high-performance, low-power operational amplifier (op-amp) from Texas Instruments. It is part of the TLV333 series and designed for use in various instrumentation, measurement, and control applications.

Product Features and Performance

Rail-to-rail input and output

Ultra-low input bias current of 70 pA

Gain bandwidth product of 350 kHz

Slew rate of 0.16V/μs

Input offset voltage of 2 mV

Wide operating voltage range of 1.8V to 5.5V

Wide operating temperature range of -40°C to 125°C

Product Advantages

Excellent precision and stability

Low power consumption

Small 8-SOIC package

Suitable for battery-powered and portable applications

TLV333IDR Image
TLV333IDR (2)

Key Technical Parameters

Package: 8-SOIC (0.154", 3.90mm Width)

Mounting Type: Surface Mount

Number of Circuits: 1

Voltage Supply Span (Min): 1.8V

Voltage Supply Span (Max): 5.5V

Current Supply: 17μA

Slew Rate: 0.16V/μs

Voltage Input Offset: 2mV

Amplifier Type: Zero-Drift

Quality and Safety Features

RoHS3 compliant

Reliable and durable performance

Compatibility

This op-amp is compatible with a wide range of electronic circuits and systems, including:

Instrumentation and measurement equipment

Process control and automation

Battery-powered and portable devices

Application Areas

Instrumentation and measurement

Process control and automation

Portable and battery-powered devices

Sensor signal conditioning

Analog-to-digital conversion

Product Lifecycle

The TLV333IDR is an active and widely used product in Texas Instruments' lineup. There are no plans for its discontinuation, and it remains a popular choice for engineers and designers.

Key Reasons to Choose This Product

Excellent precision and stability due to the zero-drift amplifier design

Low power consumption, making it suitable for battery-powered applications

Wide operating voltage and temperature range for versatile use

Small and compact 8-SOIC package for space-constrained designs

RoHS3 compliance for environmentally-friendly applications

Frequently Asked Questions(FAQ)

How does the TLV333IDR's input offset voltage of 2 µV contribute to precision in low-level signal amplification, and what are the implications for gain error at different closed-loop configurations?
The TLV333IDR achieves an exceptionally low input offset voltage of just 2 µV, which significantly reduces DC error sources in precision analog front-ends. This characteristic enables accurate amplification of small differential signals without requiring frequent calibration. When configured with a non-inverting amplifier gain of 100, the resulting gain error due to offset remains below 0.01%, making it suitable for applications such as sensor conditioning or battery-powered instrumentation where long-term stability outweighs speed requirements.
In what scenarios would the TLV333IDR outperform traditional bipolar op-amps like the LM358, considering its zero-drift architecture, power consumption, and supply voltage range?
The TLV333IDR provides superior performance over devices like the LM358 in applications requiring minimal input-referred noise and drift over time, particularly when operating from a single low-voltage supply such as 3.3 V. With a quiescent current of only 17 µA per amplifier and rail-to-rail output swing, it extends battery life and simplifies power management in portable medical monitors or environmental sensors—areas where the LM358’s higher input offset drift (~5 mV after aging) would introduce unacceptable measurement inaccuracies beyond several months of operation.
What is the impact of the TLV333IDR’s slew rate of 0.16 V/µs on transient response when driving capacitive loads above 10 nF, and how should compensation be considered in high-impedance source designs?
While the TLV333IDR’s slew rate of 0.16 V/µs supports moderate dynamic response, it becomes limiting when driving larger capacitive loads (>10 nF) without series resistance. For high-impedance sources such as piezoelectric sensors or photodiodes, this can result in settling delays exceeding 50 µs during step changes. Designers should include a small series resistor (e.g., 1 kΩ) at the output to dampen oscillations while maintaining adequate phase margin, ensuring stable operation without sacrificing bandwidth unnecessarily.
Can the TLV333IDR operate reliably in industrial automation environments spanning -40°C to +125°C, and how do thermal effects influence its offset voltage and bias current over this full temperature range?
Yes, the TLV333IDR is qualified for operation across the full -40°C to +125°C industrial temperature range. Its zero-drift architecture ensures that input offset voltage remains below 5 µV peak-to-peak over temperature, a dramatic improvement over older op-amp technologies. Additionally, the input bias current of 70 pA exhibits minimal variation with junction temperature due to its FET-input design, preserving accuracy in high-resistance feedback networks common in thermocouple amplifiers or strain gauge bridges.
How does the gain-bandwidth product of 350 kHz in the TLV333IDR constrain usable closed-loop bandwidth in precision integrators or active filters, and what trade-offs arise when targeting sub-10 Hz signal paths?
Although the TLV333IDR offers a 350 kHz gain-bandwidth product, this parameter primarily governs unity-gain stability rather than directly limiting low-frequency integrator bandwidth. However, in precision integrators designed for sub-10 Hz applications (e.g., coulomb counters), designers must ensure loop gain remains sufficiently high at DC to maintain low offset drift. The device’s near-zero input offset and bias current enable integration times exceeding 100 seconds before saturation occurs, provided proper reset mechanisms and layout practices are followed.
When comparing the TLV333IDR against alternative zero-drift amplifiers such as the NCS21871SN2T1G, which device offers better noise performance in 0.1–10 Hz bands, and under what circuit conditions does each excel?
The TLV333IDR generally delivers lower noise density (typically <3 µVp-p in 0.1–10 Hz) compared to the NCS21871SN2T1G due to its optimized chopper stabilization technique and lower flicker noise corner. This advantage becomes critical in applications like ECG monitoring or weigh-scale modules where minute signal variations dominate system noise. However, the NCS21871 may offer marginally better power efficiency in ultra-low-power modes; thus, selection depends on whether noise floor or energy budget drives the design constraint.
What precautions should be taken when using the TLV333IDR in single-supply systems powered by coin-cell batteries (e.g., CR2032), given its rail-to-rail capabilities and microampere-level quiescent current?
In single-supply battery applications such as wearable health trackers powered by a CR2032 (nominal 3 V), the TLV333IDR’s ability to operate down to 1.8 V ensures extended runtime. However, designers must verify that both input and output excursions remain within the specified common-mode range throughout discharge. Since the supply voltage drops below 2.7 V after deep discharge, internal biasing circuits could shift slightly, potentially increasing offset. Adding bulk decoupling capacitance near the IC and avoiding large pull-up resistors at inputs minimizes leakage effects and maintains reliable operation until the battery reaches end-of-life thresholds.
Does the 8-SOIC package of the TLV333IDR support automated assembly processes, and how does its MSL rating affect storage and handling prior to reflow soldering?
The TLV333IDR in an 8-SOIC package is compatible with standard surface-mount assembly lines, including pick-and-place machines and reflow ovens. With an Moisture Sensitivity Level (MSL) of 1, it requires no special dry storage or baking before use, simplifying inventory logistics. This classification indicates unlimited shelf life under normal ambient conditions, allowing direct integration into production flows without moisture pre-conditioning—critical for high-volume manufacturing environments prioritizing throughput and cost efficiency.
How does the absence of external null pins in the TLV333IDR simplify PCB layout compared to older precision op-amps, and what design considerations still apply to minimize parasitic pickup in sensitive analog sections?
Unlike legacy bipolar op-amps requiring manual offset nulling, the TLV333IDR eliminates the need for null pins and associated trimpots, reducing component count and board real estate. This simplification benefits compact IoT edge nodes where space is constrained. Nevertheless, even with internal correction, designers must still guard against electromagnetic interference by keeping input traces short, using ground planes beneath analog paths, and isolating high-current digital signals—particularly important in noisy automotive or factory-floor settings where conducted emissions can couple into high-impedance nodes.
Given the TLV333IDR’s rail-to-rail output stage, what are the practical limits on output swing when driving resistive loads in low-voltage systems, and how might this affect headroom in ADC input stages?
In single-supply configurations near 2.0 V, the TLV333IDR’s output typically swings within approximately 50 mV of each rail, yielding a maximum swing of roughly 1.95 Vpp centered around 1.0 V. When interfacing with 12-bit ADCs expecting full-scale inputs near VDD, this limited headroom forces careful gain staging to avoid clipping while maximizing resolution. For instance, amplifying a ±10 mV sensor signal to 90% of VDD requires a precise gain setting and possibly post-processing scaling to fully utilize the ADC’s dynamic range.
What role does the 350 kHz gain-bandwidth product play when cascading multiple stages in a signal chain using the TLV333IDR, and how should stability margins be assessed in multi-pole filter implementations?
In cascaded topologies such as two-stage instrumentation amplifiers, the TLV333IDR’s 350 kHz GBW imposes cumulative bandwidth constraints—each stage reduces overall bandwidth by approximately √2 for equal gains. Therefore, achieving 10 kHz final bandwidth requires first-stage gain ≤5 and second-stage gain ≤4 to stay within stability bounds. Stability analysis must account for parasitic capacitances at each node; adding small compensation capacitors (e.g., 1–10 pF) between output and inverting input helps maintain phase margin above 45°, preventing oscillation in higher-order active filters.
How does the TLV333IDR compare to the MCP6001 in terms of input noise characteristics and power consumption when used in photodiode transimpedance amplifiers under dim light conditions?
In dim-light photodiode applications requiring high impedance feedback (e.g., 100 kΩ–1 MΩ), the TLV333IDR outperforms the MCP6001 due to its lower input voltage noise (typically 10 nV/√Hz vs. 18 nV/√Hz) and negligible input bias current (70 pA vs. 1 pA but with higher flicker noise). Despite both drawing similar quiescent current (~15–20 µA), the TLV333IDR’s superior noise figure translates into measurable signal-to-noise ratio improvements when detecting sub-nA photocurrents, making it preferable for low-light spectroscopy or optical encoders operating below 1 lux illumination.
Are there any known limitations in using the TLV333IDR as a comparator in open-loop mode, and how does its internal architecture affect switching behavior versus dedicated comparators?
The TLV333IDR is not optimized for open-loop comparator duty and may exhibit unpredictable response times (<1 µs typical) and hysteresis instability near threshold crossings due to its automatic offset correction cycling. While usable in non-critical timing applications, it lacks the slew acceleration and propagation delay consistency found in comparators like the TLV3501. For robust edge detection in control loops, a dedicated comparator should replace the TLV333IDR unless signal integrity and metastability risks are deemed acceptable through extensive validation testing.
What considerations apply when substituting the TLV333IDR for legacy parts in existing schematics originally designed around the LMV321, especially regarding input protection and ESD robustness?
Replacing an LMV321 with the TLV333IDR requires attention to ESD protection levels: the TLV333IDR has a lower absolute maximum rating (HBM ±4 kV) compared to some industrial-grade predecessors. Additionally, its FET-input structure makes it susceptible to gate oxide damage from static discharge even with modest voltages if input pins float. Implementing series resistors (100 Ω) and TVS diodes on sensitive nodes, along with proper grounding practices, preserves reliability during prototyping and field upgrades in harsh environments.
How does the cut tape and Digi-Reel packaging format of the TLV333IDR facilitate automated component handling, and what are the logistical advantages for high-throughput PCB assembly operations?
The TLV333IDR supplied in cut tape (CT) and Digi-Reel formats aligns with industry-standard automated feeder systems used in surface-mount technology (SMT) lines. Cut tape allows individual placement via robotic arms, ideal for low-to-medium volume builds, while full reels support continuous feeding in mass production. Both formats maintain electrostatic discharge (ESD) shielding and prevent lead contamination, ensuring consistent pick-and-place success rates and minimizing downtime due to jamming—key factors in contract manufacturers serving aerospace or medical device sectors requiring traceable sourcing.

Parts with Similar Specifications

The three parts on the right have similar specifications to Texas Instruments TLV333IDR

Product Attribute TLV333IDR TLV333IDCKR TLV333IDBVT TLV333IDBVR
Part Number TLV333IDR TLV333IDCKR TLV333IDBVT TLV333IDBVR
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Base Product Number TLV333 TLV333 TLV333 TLV333
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Slew Rate 0.16V/µs 0.16V/µs 0.16V/µs 0.16V/µs
Supplier Device Package 8-SOIC SC-70-5 SOT-23-5 SOT-23-5
Current - Supply 17µA 17µA 17µA 17µA
Amplifier Type Zero-Drift Zero-Drift Zero-Drift Zero-Drift
Current - Input Bias 70 pA 70 pA 70 pA 70 pA
Gain Bandwidth Product 350 kHz 350 kHz 350 kHz 350 kHz
Package / Case 8-SOIC (0.154", 3.90mm Width) 5-TSSOP, SC-70-5, SOT-353 SC-74A, SOT-753 SC-74A, SOT-753
Voltage - Supply Span (Min) 1.8 V 1.8 V 1.8 V 1.8 V
Voltage - Input Offset 2 µV 2 µV 2 µV 2 µV
Voltage - Supply Span (Max) 5.5 V 5.5 V 5.5 V 5.5 V
Package Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Number of Circuits 1 1 1 1
Operating Temperature -40°C ~ 125°C -40°C ~ 125°C -40°C ~ 125°C -40°C ~ 125°C
Output Type Rail-to-Rail Rail-to-Rail Rail-to-Rail Rail-to-Rail
Series - - - -

TLV333IDR Datasheet PDF

Download TLV333IDR pdf datasheets and Texas Instruments documentation for TLV333IDR - Texas Instruments.

PCN Design/Specification
Design 25/Feb/2022.pdf OPA2317/OPA317/TLV2333 REVB 6/Jan/2017.pdf

Customer Reviews

Evaluation: 10 Articles

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

  • Oliv***arris
    May 7, 2026

    Reliable I/O expander. Works well in embedded control applications.

  • Jess***Jones
    Apr 17, 2026

    It offers good value for the price, and the specifications match the description. I’ve been using it for two days with no issues, and I’ll definitely buy it again if I need it in the future.

  • Mich***Smith
    Apr 17, 2026

    Shipping was on time, the component pins are neatly aligned, and I tested 10 of them with a multimeter—all readings were within the specified range. Highly recommended.

  • Aman***arris
    Apr 3, 2026

    It was great—the entire process, from placing the order to receiving the package, went very smoothly. The components were consistent, the price was fair, and I had a very pleasant shopping experience.

  • Mike***nch
    Apr 3, 2026

    Better than expected! The resistance and capacitance readings were spot-on, and it passed the test on the first try. The service was reliable, and the packaging was thoughtful—I highly recommend it.

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Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.
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Electrostatic Discharge Protection and Handling

All electrostatic-sensitive components are handled in accordance with electrostatic discharge control procedures. The products are hermetically sealed in anti-static safe packaging to prevent electrostatic damage. Appropriate labeling is also applied for identification and traceability. This ensures product integrity during storage, handling and transportation.


ESD

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TLV333IDR Image

TLV333IDR

Texas Instruments
32D-TLV333IDR

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