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HomeProductsIntegrated Circuits (ICs)PMIC - Gate DriversUCC27211DDAR
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UCC27211DDAR - Texas Instruments

Manufacturer Part Number
UCC27211DDAR
Manufacturer
Texas Instruments
Allelco Part Number
32D-UCC27211DDAR
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
46,720 pcs available, New & Original
Parts Description
IC GATE DRVR HALF-BRIDGE 8SOPWR
Package
8-SO PowerPad
Data sheet
UCC27211DDAR.pdf

HTML Datasheet

UCC27210,211.pdf
RoHs Status
ROHS3 Compliant
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In stock: 46720
  • Unit Price: $1.217
  • Subtotal: $0.00

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Quantity Unit Price Ext. Price
1+ $1.217 $1.22
10+ $1.045 $10.45
30+ $0.938 $28.14
100+ $0.827 $82.70
500+ $0.777 $388.50
1000+ $0.755 $755.00
The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Specifications

UCC27211DDAR Tech Specifications
Texas Instruments - UCC27211DDAR technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments - UCC27211DDAR

Product Attribute Attribute Value
Manufacturer Texas Instruments
Voltage - Supply 8V ~ 17V
Supplier Device Package 8-SO PowerPad
Series -
Rise / Fall Time (Typ) 7.2ns, 5.5ns
Package / Case 8-PowerSOIC (0.154', 3.90mm Width)
Package Tape & Reel (TR)
Operating Temperature -40°C ~ 140°C (TJ)
Number of Drivers 2
Product Attribute Attribute Value
Mounting Type Surface Mount
Logic Voltage - VIL, VIH 1.3V, 2.8V
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 120 V
Gate Type N-Channel MOSFET
Driven Configuration Half-Bridge
Current - Peak Output (Source, Sink) 4A, 4A
Channel Type Independent
Base Product Number UCC27211

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.39.0001

Parts Introduction

UCC27211DDAR Image
UCC27211DDAR (1)

Manufacturer Part Number

UCC27211DDAR

Manufacturer

Texas Instruments

Introduction

The UCC27211DDAR from Texas Instruments is a high-performance, half-bridge gate driver designed for efficient power management and signal amplification in a wide range of applications.

Product Features and Performance

Operates with supply voltages from 8V to 17V.

Provides independent driving for two N-Channel MOSFET gates.

Supports high-side voltages up to 120V via bootstrap technique.

Delivers peak output currents of 4A for both source and sink.

Features fast rise and fall times of 7.2ns and 5.5ns, respectively.

Input type is non-inverting for straightforward signal processing.

Engineered with robust thermal performance, operating between -40°C and 140°C (TJ).

Product Advantages

Allows for efficient switching performance, reducing power losses.

Enhances signal integrity and responsiveness due to quick rise/fall times.

Enables flexible design options with its wide range of operating voltages.

Supports high current driving capabilities for demanding applications.

Offers high reliability and long operational lifespan in extreme conditions.

UCC27211DDAR Image
UCC27211DDAR (2)

Key Technical Parameters

Driven Configuration: Half-Bridge

Channel Type: Independent

Number of Drivers: 2

Gate Type: N-Channel MOSFET

Supply Voltage: 8V ~ 17V

Logic Voltage VIL, VIH: 1.3V, 2.8V

Peak Output Current: 4A (Source), 4A (Sink)

High Side Voltage Max (Bootstrap): 120V

Rise/Fall Time (Typ): 7.2ns/5.5ns

Quality and Safety Features

Manufactured by Texas Instruments, a leader in semiconductor innovation.

Constructed with high-quality materials for durability and long-term reliability.

Strict quality control processes ensure that each unit meets high safety standards.

Compatibility

Compatible with a wide range of N-Channel MOSFETs.

Flexible for use in various circuit designs due to its non-inverting input type.

Application Areas

Power supplies

Motor controls

Inductive load switching

High-frequency power converters

Product Lifecycle

This product is currently in Active status, indicating ongoing production and availability.

No information suggests nearing discontinuation, ensuring long-term supply for designs.

Several Key Reasons to Choose This Product

High-performance characteristics suitable for demanding power management tasks.

Fast switching speeds improve efficiency and reduce thermal load.

Versatile voltage and current handling capabilities support a broad range of applications.

Developed and supported by Texas Instruments, assuring quality and reliability.

Availability in Tape & Reel packaging facilitates efficient assembly processes for high-volume production.

Frequently Asked Questions(FAQ)

How does the UCC27211DDAR compare to single-channel gate drivers in terms of power stage efficiency for half-bridge topologies?
The UCC27211DDAR integrates two independent N-channel MOSFET drivers in a single package, enabling precise dead-time control and reduced propagation delay skew compared to cascading two separate single-channel drivers. This integration lowers parasitic inductance and improves switching symmetry, which is critical in high-frequency half-bridge applications such as resonant converters or motor drives. With peak source and sink currents of 4A each, it supports fast rise (7.2ns) and fall (5.5ns) times, minimizing shoot-through risk and conduction losses. In contrast, using discrete drivers may introduce timing mismatches and increased layout complexity, potentially degrading overall efficiency above 200kHz operation.
What design considerations are necessary when using the UCC27211DDAR with bootstrap capacitor selection and sizing?
The UCC27211DDAR uses a bootstrap circuit to drive the high-side N-channel MOSFET, requiring careful selection of the bootstrap capacitor value based on gate charge requirements and switching frequency. For typical IGBTs or SiC MOSFETs with Qg ≈ 30–60nC, a 0.1µF ceramic capacitor is commonly used. However, at high frequencies (>100kHz), leakage current and voltage droop necessitate capacitors with low ESR and sufficient capacitance margin—typically ≥0.22µF. The maximum high-side voltage is 120V, so the bootstrap capacitor must be rated at least 100V. Additionally, ensure adequate PCB routing from the bootstrap diode and capacitor to minimize voltage sag during dead time, especially in continuous conduction mode or under heavy loads.
Can the UCC27211DDAR operate reliably in automotive environments, and what temperature-related constraints should be considered?
Yes, the UCC27211DDAR is specified over an operating junction temperature range of -40°C to +140°C, making it suitable for automotive-grade applications including engine control modules and electric power steering systems. The device’s thermal performance depends heavily on PCB copper area and airflow, particularly in enclosed systems. At elevated temperatures near 140°C, internal protection circuits may reduce output drive capability to prevent thermal runaway. Engineers should ensure junction-to-ambient thermal resistance remains below 50°C/W through proper heatsinking and layout practices, especially when driving large gate charges at high frequencies.
How does the input logic compatibility of the UCC7211DDAR affect microcontroller interfacing in 3.3V digital systems?
The UCC27211DDAR features non-inverting inputs with VIH(min) = 2.8V and VIL(max) = 1.3V, ensuring full compatibility with standard 3.3V TTL/CMOS microcontrollers without level-shifting components. This simplifies system design and reduces component count in digital control loops. When driven directly from a 3.3V MCU GPIO pin, the driver guarantees clean, noise-resistant transitions into the valid logic-high region, minimizing shoot-through risk due to delayed turn-on. However, designers should verify that the MCU output high voltage (VOH) exceeds 2.8V at the expected load and temperature to avoid marginal triggering during cold starts or high-load conditions.
What are the implications of using the UCC27211DDAR in isolated vs. non-isolated power stages?
The UCC27211DDAR is designed for non-isolated half-bridge configurations where both high-side and low-side drivers share a common ground reference. It does not provide galvanic isolation, so it is unsuitable for applications requiring safety-compliant separation between primary and secondary sides, such as in flyback or forward converters with reinforced insulation. In non-isolated topologies like LLC resonant converters or synchronous buck-boost stages, however, its dual-channel architecture enables efficient complementary switching with minimal cross-conduction. Isolation would require additional optocouplers or digital isolators for signal transmission, increasing cost and reducing bandwidth compared to direct-drive solutions.
How does the UCC27211DDAR handle shoot-through current during dead-time optimization?
Shoot-through occurs when both high-side and low-side MOSFETs conduct simultaneously, creating a short across the supply rails. The UCC27211DDAR minimizes this risk through precise propagation delay matching (<10ns typical) and support for external dead-time insertion via complementary enable inputs if available in the variant. Its fast rise and fall times help reduce overlap, but ultimate protection relies on correct firmware or hardware-generated dead time—typically 100–500ns depending on MOSFET dv/dt characteristics. In practice, oscilloscope probing of gate signals during startup can validate dead-time adequacy; excessive shoot-through manifests as ringing and elevated quiescent current draw even with no load.
What are the key differences between the UCC27211DDAR and the UCC27211DR, and how do packaging choices impact high-power designs?
Both the UCC27211DDAR and UCC27211DR belong to the same UCC27211 family and share identical electrical characteristics, including supply voltage range, output current, and timing parameters. The primary difference lies in packaging: the DDAR uses an 8-PowerSOIC (3.9mm width) with exposed thermal pad for improved heat dissipation, while the DR is a conventional 8-SOIC without enhanced thermal features. In high-power or densely populated boards, the PowerPad package significantly lowers θJA by providing direct thermal connection to ground planes, enabling sustained operation under continuous 4A loads without derating. Thus, for >50W applications, the DDAR is preferred despite slightly higher assembly costs.
What precautions should be taken regarding ESD sensitivity when handling the UCC27211DDAR in production environments?
Although the Moisture Sensitivity Level (MSL) is rated at 1 (unlimited floor life), the UCC27211DDAR is sensitive to electrostatic discharge due to its CMOS-based input circuitry. During assembly, operators must use grounded wrist straps, ESD-safe workstations, and conductive trays. The device should not be handled after soldering until fully cooled to avoid latch-up risks. While the absolute maximum ratings specify ±0.5V on inputs, real-world failures often occur from accumulated charge during transport or handling. Implementing proper grounding and avoiding plastic containers during storage further mitigates risk, particularly in automated pick-and-place systems where contact forces are significant.
How does the UCC27211DDAR perform in terms of electromagnetic interference (EMI) emission compared to older gate drivers?
The UCC27211DDAR exhibits lower EMI emissions than legacy drivers due to its optimized internal circuitry and reduced di/dt through controlled slew rates. However, EMI is ultimately dominated by layout parasitics and switching node behavior rather than the driver itself. To minimize emissions, keep gate traces short, use low-inductance bypass capacitors near the IC, and employ snubbers or RC filters on floating gates. Compared to slower drivers with exponential output curves, the UCC27211DDAR’s linear-mode operation allows tunable damping, offering better control over high-frequency spectral content. Still, compliance testing must include worst-case scenarios such as rapid load steps and variable duty cycles.
Can the UCC27211DDAR be used in synchronous buck converter implementations, and what modifications might be needed?
Yes, the UCC27211DDAR can drive synchronous buck converters in half-bridge form, where it replaces dedicated PWM controllers by directly receiving logic-level signals from a microcontroller. Unlike integrated controller+driver ICs, this approach offers flexibility in feedback compensation and sequencing but requires external MOSFETs, bootstrap circuitry, and possibly current-sense amplifiers. Care must be taken to match gate drive strength to MOSFET input capacitance; for example, driving a 100nF gate capacitance at 200kHz demands effective bandwidth beyond 1MHz to maintain phase margin. Additionally, ensure adequate gate-source clamping diodes to protect against negative transients during body-diode conduction.
What role does the PowerPad package play in thermal management for the UCC27211DDAR?
The 8-SO PowerPad package includes an exposed pad beneath the IC that connects internally to substrate nodes, providing a low-impedance path to the PCB’s inner or bottom-layer ground plane. This enhances heat dissipation, reducing thermal resistance from junction to ambient (θJA). In typical 2-layer PCBs with 2oz copper, θJA can drop below 35°C/W, allowing the UCC27211DDAR to sustain full 4A output current without exceeding 125°C junction temperature at ambient up to 85°C. Without the PowerPad, thermal performance degrades sharply, limiting reliability in compact designs. Always solder the pad to a solid ground plane using multiple vias for optimal results.
How does the supply voltage range of 8V to 17V influence compatibility with various power architectures?
The UCC27211DDAR operates from 8V to 17V, making it compatible with both standard 12V industrial supplies and emerging 15V or 18V battery systems. This range avoids the need for additional boost regulators when powered from main rails, simplifying system architecture. However, it excludes low-voltage applications such as 5V or 3.3V logic-driven converters unless combined with a pre-regulator. In automotive contexts, 12V nominal systems naturally fit within this window, while start-stop events may briefly dip below 8V—engineers should confirm transient immunity or add bulk capacitance to maintain regulation during cranking pulses.
What are the limitations of using the UCC27211DDAR with wide-bandgap (WBG) devices like GaN or SiC MOSFETs?
The UCC27211DDAR is well-suited for WBG devices due to its fast switching capability and high output current, which helps mitigate parasitic inductance effects common in GaN/SiC circuits. However, WBG MOSFETs exhibit extremely low gate charge (Qg < 10nC) and require precise gate resistance tuning to balance speed and ringing. Using too small a resistor increases overshoot and EMI, while too large a value slows switching and defeats the purpose of WBG benefits. Additionally, the driver’s internal Miller clamp functionality (if present) may need external implementation to prevent false turn-on from dV/dt-induced displacement currents—critical in hard-switched topologies.
How should PCB layout be optimized around the UCC27211DDAR to maximize performance?
Critical layout rules include placing bootstrap capacitor and diode as close as possible to the device pins, using wide traces for power and ground connections, and minimizing loop area in high-current paths. Separate analog and power grounds with a single connection point near the IC to avoid ground bounce. Route input signals away from switching nodes to prevent coupling-induced jitter. Use at least two vias for the PowerPad solder joint to enhance thermal conductivity. Keep gate drive traces short and impedance-matched, ideally <50mm length, to preserve rise/fall time integrity under 4A drive conditions.
What diagnostic features or failure modes should engineers monitor when integrating the UCC27211DDAR into their systems?
While the UCC27211DDAR lacks built-in fault reporting, designers can infer issues through indirect means: excessive quiescent current indicates potential shoot-through; unstable bootstrap voltage suggests capacitor degradation or poor diode selection; erratic gate waveforms imply layout or decoupling problems. Thermal shutdown typically activates above 160°C, disabling outputs until cooling resumes. Monitoring supply ripple and ground shifts during switching provides early warning of instability. In safety-critical systems, redundant drivers or watchdog timers may be necessary since the part does not support overtemperature alerts or retry mechanisms.

Parts with Similar Specifications

The three parts on the right have similar specifications to Texas Instruments UCC27211DDAR

Product Attribute UCC27211AQDDARQ1 UCC27212AQDDARQ1 UCC27211DPRT UCC27211DPRR
Part Number UCC27211AQDDARQ1 UCC27212AQDDARQ1 UCC27211DPRT UCC27211DPRR
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Base Product Number - DAC34H84 MAX500 ADS62P42
Voltage - Supply - - - -
Rise / Fall Time (Typ) - - - -
Channel Type - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Logic Voltage - VIL, VIH - - - -
High Side Voltage - Max (Bootstrap) - - - -
Number of Drivers - - - -
Series - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Driven Configuration - - - -
Gate Type - - - -
Operating Temperature - -40°C ~ 85°C 0°C ~ 70°C -40°C ~ 85°C
Mounting Type - Surface Mount Through Hole Surface Mount
Current - Peak Output (Source, Sink) - - - -
Input Type - - - Differential
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)

UCC27211DDAR Datasheet PDF

Download UCC27211DDAR pdf datasheets and Texas Instruments documentation for UCC27211DDAR - Texas Instruments.

HTML Datasheet
UCC27210,211.pdf

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Customer Reviews

Evaluation: 10 Articles

  • Nath***rooks
    Jun 11, 2026

    Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

  • Dani***alkerTech
    Jun 1, 2026

    Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

  • Oliv***arris
    May 7, 2026

    Reliable I/O expander. Works well in embedded control applications.

  • Jess***Jones
    Apr 17, 2026

    It offers good value for the price, and the specifications match the description. I’ve been using it for two days with no issues, and I’ll definitely buy it again if I need it in the future.

  • Mich***Smith
    Apr 17, 2026

    Shipping was on time, the component pins are neatly aligned, and I tested 10 of them with a multimeter—all readings were within the specified range. Highly recommended.

  • Aman***arris
    Apr 3, 2026

    It was great—the entire process, from placing the order to receiving the package, went very smoothly. The components were consistent, the price was fair, and I had a very pleasant shopping experience.

  • Mike***nch
    Apr 3, 2026

    Better than expected! The resistance and capacitance readings were spot-on, and it passed the test on the first try. The service was reliable, and the packaging was thoughtful—I highly recommend it.

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UCC27211DDAR Image

UCC27211DDAR

Texas Instruments
32D-UCC27211DDAR

Want a better price? Add to Cart and Submit RFQ now, we'll contact you immediately.

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