Manufacturer Part Number
APT35GP120B2DQ2G
Manufacturer
Microchip Technology
Introduction
This is a discrete semiconductor product, specifically a transistor IGBT (Insulated Gate Bipolar Transistor) single.
Product Features and Performance
Operating Temperature Range: -55°C to 150°C (TJ)
Power Rating: Max 543 W
IGBT Type: PT (Punch-Through)
Collector-Emitter Breakdown Voltage (Max): 1200 V
Collector Current (Max): 96 A
Collector-Emitter Saturation Voltage (Max): 3.9 V @ 15 V, 35 A
Gate Charge: 150 nC
Pulsed Collector Current (Max): 140 A
Switching Energy: 750 J (on), 680 J (off)
Turn-on/Turn-off Delay Time (@ 25°C): 16 ns / 95 ns
Product Advantages
High power handling capability
High voltage rating
Fast switching speed
Robust design for reliable operation
Key Technical Parameters
Collector-Emitter Breakdown Voltage
Collector Current
Collector-Emitter Saturation Voltage
Switching Energy
Switching Times
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and safety
Compatibility
TO-247-3 package, suitable for a wide range of applications
Application Areas
Power conversion and control systems
Motor drives
Welding equipment
Renewable energy systems
Industrial automation
Product Lifecycle
This product is currently in production and actively supported by Microchip Technology.
Key Reasons to Choose This Product
High power handling capability for demanding applications
Excellent voltage and current ratings for high-performance power electronics
Fast switching characteristics for efficient power conversion
Robust and reliable design for long-term use
RoHS compliance for environmentally-friendly applications
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