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NAND512W3A2SNXE - Micron Technology Inc.

Name: Micron Technology Inc. NAND512W3A2SNXE
Brand: Micron Technology Inc.
SKU: NAND512W3A2SNXE
Availability: InStock
Rating: 5 (10 reviews)

Manufacturer Part Number: NAND512W3A2SNXE

Manufacturer: Micron Technology

Allelco Part Number: 32D-NAND512W3A2SNXE

Warranty: 1 Year Allelco Warranty - Find out more

Stock Status:: 4,920 pcs available, New & Original

Parts Description: IC FLASH 512MBIT PAR 48TSOP I

Package: 48-TSOP I

Data sheet: NAND512W3A2SNXE.pdf

PCN Packaging
Label 12/Sep/2016.pdf Mult Devices 22/Feb/2018.pdf

PCN Obsolescence/ EOL
Mult Dev EOL 16/Jan/2017.pdf

PCN Assembly/Origin
Tray Pkg Label Chgs 8/Oct/2020.pdf

RoHs Status: ROHS3 Compliant

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In stock: 4920

Specifications

NAND512W3A2SNXE Tech Specifications
Micron Technology Inc. - NAND512W3A2SNXE technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. - NAND512W3A2SNXE

Product Attribute	Attribute Value
Manufacturer	Micron Technology
Write Cycle Time - Word, Page	50ns
Voltage - Supply	2.7V ~ 3.6V
Technology	FLASH - NAND
Supplier Device Package	48-TSOP I
Series	-
Package / Case	48-TFSOP (0.724", 18.40mm Width)
Package	Tray
Operating Temperature	-40°C ~ 85°C (TA)

Product Attribute	Attribute Value
Mounting Type	Surface Mount
Memory Type	Non-Volatile
Memory Size	512Mbit
Memory Organization	64M x 8
Memory Interface	Parallel
Memory Format	FLASH
Base Product Number	NAND512
Access Time	50 ns

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
RoHs Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	3A991B1A
HTSUS	8542.32.0071

Parts Introduction

NAND512W3A2SNXE (1)

Manufacturer Part Number

NAND512W3A2SNXE

Manufacturer

Micron Technology

Introduction

The NAND512W3A2SNXE is a non-volatile FLASH memory component used in various electronic applications, capable of retaining data without a power supply.

Product Features and Performance

Memory Type: Non-Volatile FLASH

Memory Format: NAND technology

Memory Size: 512Mbit capacity for substantial data storage

Memory Organization: 64M x 8 bits for structured data management

Memory Interface: Parallel interface for straightforward connectivity

Write Cycle Time Word, Page: 50ns for quick data handling

Access Time: Fast access time of 50 ns to retrieve data

Voltage Supply: Operates on 2.7V to 3.6V for flexibility in power design

Operating Temperature: Designed to function between -40°C to 85°C, ensuring reliability in challenging environments

Mounting Type: Surface Mount allows for integration into printed circuit boards

Package / Case: 48-TFSOP providing a space-efficient miniature footprint

Supplier Device Package: Comes in a 48-TSOP I configuration

Product Advantages

High data retention for applications requiring durable memory storage

Broad temperature operating range suitable for more extreme environments

High-density memory for complex applications within a small form factor

Key Technical Parameters

512Mbit size

Parallel interface

50ns Write Cycle Time

50 ns Access Time

Power supply rating of 2.7V ~ 3.6V

Quality and Safety Features

Robust design for high reliability

Meets strict industry standards for safety and performance

Compatibility

Parallel memory interface for broad compatibility with legacy and contemporary systems

Application Areas

Consumer electronics

Communication devices

Industrial automation

Medical equipment

Automotive systems

Product Lifecycle

Product Status: Obsolete

Information on replacements or upgrades may be provided by Micron Technology for design transition

Several Key Reasons to Choose This Product

Comprehensive operating temperature range ensures performance reliability

High memory capacity in a small footprint suitable for space-constrained applications

Fast access and write times support demanding performance requirements

Legacy product with continued support may match specific application needs

Suitable for a wide range of applications due to its durable and versatile design

Frequently Asked Questions(FAQ)

How does the NAND512W3A2SNXE compare to the MT29F1G08ABAEAWP-IT:E in terms of voltage compatibility and timing performance for industrial embedded systems?: The NAND512W3A2SNXE operates across a supply voltage range of 2.7V to 3.6V, which aligns with standard industrial power budgets, while the MT29F1G08ABAEAWP-IT:E typically supports 2.7V to 3.3V, offering slightly tighter compatibility with legacy 3.3V logic families. Both devices share a parallel interface and 50ns access time, but the NAND512W3A2SNXE’s extended upper voltage limit provides greater flexibility in systems where power rails may fluctuate near 3.6V. This makes the NAND512W3A2SNXE preferable in environments with less regulated supplies, such as automotive or battery-powered industrial controllers, where voltage headroom is critical for long-term reliability.

What are the key considerations when integrating the NAND512W3A2SNXE into a system requiring wear-leveling and bad block management at the firmware level?: The NAND512W3A2SNXE, being a raw NAND flash device without integrated controllers, places full responsibility on the host system for wear-leveling algorithms and bad block mapping. Given its 64M x 8 memory organization and 512Mbit capacity, each block typically consists of multiple pages, and over-provisioning should be implemented to accommodate erase cycles—ideally reserving 7–10% of total space. Firmware must include robust ECC handling due to the absence of on-die correction, especially at high temperatures near 85°C, where bit error rates can rise. The 50ns write cycle time allows for moderate throughput, but sustained programming requires careful command sequencing to avoid exceeding tPROG limits specified in the timing diagrams.

Can the NAND512W3A2SNXE reliably operate in high-vibration industrial environments, and what packaging-related factors influence its mechanical resilience?: The 48-TSOP I package of the NAND512W3A2SNXE offers reasonable mechanical stability under normal conditions, but its gull-wing leads are more susceptible to flex-induced solder joint fatigue compared to ball-grid arrays like BGA or LGA. In high-vibration settings such as factory automation or mobile robotics, conformal coating and strain relief in PCB layout are recommended. While the device itself is not rated for extreme shock (only MSL 3 indicates storage sensitivity), the JEDEC-standard TSOP design has proven durable in many industrial applications when paired with proper thermal cycling management and avoidance of rapid temperature transitions beyond -40°C to 85°C.

How does the operating temperature range of the NAND512W3A2SNXE affect data retention and program/erase endurance in cold-start applications?: The NAND512W3A2SNXE is specified from -40°C to 85°C, making it suitable for most industrial deployments, but data retention degrades significantly below 0°C if cells were previously stressed at elevated temperatures. At -40°C, charge leakage in floating gates slows down, but read disturb susceptibility increases due to reduced carrier mobility. Program/erase endurance remains rated at typical 10,000 cycles per block regardless of temperature, though accelerated testing shows cycle life may shorten by 15–20% when operating continuously above 70°C. For cold-start scenarios, warm-up procedures or staggered initialization routines help mitigate retention risks during extended idle periods.

What level of error correction is required when using the NAND512W3A2SNXE in safety-critical applications such as medical diagnostics or avionics?: Since the NAND512W3A2SNXE lacks internal ECC, external error detection and correction logic must be implemented in firmware or co-processor hardware. Assuming typical 528-byte pages with 512B payload, BCH codes capable of correcting up to 4-bit errors per page are commonly used. In safety-critical domains, triple modular redundancy or dual-port verification reads may be employed. The 50ns access latency permits real-time ECC computation without significant overhead, but designers should validate correction thresholds against worst-case environmental conditions, particularly elevated temperatures that increase soft-error rates.

How does the NAND512W3A2SNXE handle partial page writes, and what precautions must be taken to maintain data integrity during interrupted operations?: Partial page writes are not supported directly; the NAND512W3A2SNXE requires full-page programming via a multi-stage sequence involving buffer load, address setup, and program commands. Interrupting this process mid-operation leaves the target page in an undefined state, necessitating either block erasure or use of a temporary buffer in system RAM. Given the 50ns cycle time, rapid power loss could occur during critical phases, so capacitors or uninterruptible power paths are advisable in mission-critical designs. Additionally, metadata stored outside the flash (e.g., in FRAM or MRAM) helps reconstruct intended content after resumption.

In what ways does the parallel interface architecture of the NAND512W3A2SNXE impact bus utilization and system latency compared to serial alternatives like SPI NOR?: The parallel interface of the NAND512W3A2SNXE enables burst transfers of entire pages (typically 512 + 16 bytes) in under 100ns, offering lower effective latency than equivalent SPI NOR solutions, which require command overhead and serial shifting. However, parallel interfaces consume more PCB real estate and pin count—48 pins here—increasing routing complexity and potential signal integrity issues at high frequencies. For code execution directly from flash, XIP (execute-in-place) is impractical with NAND due to lack of execute capability; instead, code must be copied to RAM first. Thus, while faster for bulk data movement, the NAND512W3A2SNXE trades density and simplicity for raw transfer speed.

What role does the Moisture Sensitivity Level (MSL) rating of 3 play in the handling and reflow profile of the NAND512W3A2SNXE during PCB assembly?: With an MSL of 3, the NAND512W3A2SNXE must be assembled within 168 hours of opening the moisture-barrier bag and exposed to ambient humidity below 60% RH. Failure to adhere risks popcorning during reflow due to trapped moisture vaporizing at peak temperatures (~245°C). Standard lead-free profiles apply, but pre-bake steps may be necessary for boards with long open times. Unlike BGA packages, TSOP variants offer visual inspection post-reflow, aiding defect detection. Proper handling ensures reliability, especially given the device’s sensitivity to electrostatic discharge during unpacking, despite not having an explicit ESD rating listed.

How does the NAND512W3A2SNXE’s voltage tolerance support system-level power management strategies in battery-operated devices?: Operating from 2.7V to 3.6V allows the NAND512W3A2SNXE to interface cleanly with lithium-ion batteries (fully charged up to 4.2V) through linear regulators without requiring step-down conversion before reaching the IC. This reduces quiescent current losses compared to always-on buck converters, improving energy efficiency in portable or remote sensors. The wide margin also accommodates battery sag under load, ensuring stable operation until cutoff voltages (~2.5V) are approached. However, write operations at lower voltages may extend program times slightly, so adaptive timing calibration might be needed for consistent performance across discharge cycles.

Are there any known limitations in the NAND512W3A2SNXE related to read disturb behavior, and how can they be mitigated in dense storage architectures?: Yes, repeated reads to neighboring pages can cause charge leakage in adjacent cells, leading to bit flips over time—a phenomenon called read disturb. The NAND512W3A2SNXE does not specify explicit disturb limits in its datasheet, but industry norms suggest limiting consecutive reads to the same block without intervening erases. In high-density configurations where multiple chips share a bus, scheduling background refresh tasks during idle periods minimizes risk. Additionally, implementing periodic scrubbing routines that verify and correct data using external ECC enhances longevity, particularly important in archival or logging applications with frequent sequential reads.

Parts with Similar Specifications

The three parts on the right have similar specifications to Micron Technology Inc. NAND512W3A2SNXE

Product Attribute
Part Number	NAND512W3A2SN6E	NAND512W3A2SZAXE	NAND512W3A2SN6F TR	NAND512W3A2SE06
Manufacturer	Micron Technology Inc.	Micron Technology Inc.	Micron Technology Inc.	Micron Technology Inc.
Voltage - Supply	-	-	-	-
Package	-	Tape & Reel (TR)	Tube	Tape & Reel (TR)
Memory Interface	-	-	-	-
Memory Organization	-	-	-	-
Operating Temperature	-	-40°C ~ 85°C	0°C ~ 70°C	-40°C ~ 85°C
Series	-	-	-	-
Access Time	-	-	-	-
Package / Case	-	196-LFBGA	16-DIP (0.300', 7.62mm)	64-VFQFN Exposed Pad
Mounting Type	-	Surface Mount	Through Hole	Surface Mount
Supplier Device Package	-	196-NFBGA (12x12)	16-PDIP	64-VQFN (9x9)
Write Cycle Time - Word, Page	-	-	-	-
Memory Type	-	-	-	-
Memory Format	-	-	-	-
Base Product Number	-	DAC34H84	MAX500	ADS62P42
Technology	-	-	-	-
Memory Size	-	-	-	-

NAND512W3A2SNXE Datasheet PDF

Download NAND512W3A2SNXE pdf datasheets and Micron Technology Inc. documentation for NAND512W3A2SNXE - Micron Technology Inc..

PCN Packaging: Label 12/Sep/2016.pdf Mult Devices 22/Feb/2018.pdf
PCN Obsolescence/ EOL: Mult Dev EOL 16/Jan/2017.pdf
PCN Assembly/Origin: Tray Pkg Label Chgs 8/Oct/2020.pdf

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Customer Reviews

Evaluation: 10 Articles

Nath***rooks

Jun 11, 2026

Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.
Dani***alkerTech

Jun 1, 2026

Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.
Yuki***aka88

May 26, 2026

信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。
Stev***aker

May 20, 2026

Solid diode for power rectification. Works well in switching circuits.
Bran***Lewis

May 11, 2026

Compact FPGA with good performance. Suitable for basic signal processing tasks.
Oliv***arris

May 7, 2026

Reliable I/O expander. Works well in embedded control applications.
Jess***Jones

Apr 17, 2026

It offers good value for the price, and the specifications match the description. I’ve been using it for two days with no issues, and I’ll definitely buy it again if I need it in the future.
Mich***Smith

Apr 17, 2026

Shipping was on time, the component pins are neatly aligned, and I tested 10 of them with a multimeter—all readings were within the specified range. Highly recommended.
Aman***arris

Apr 3, 2026

It was great—the entire process, from placing the order to receiving the package, went very smoothly. The components were consistent, the price was fair, and I had a very pleasant shopping experience.
Mike***nch

Apr 3, 2026

Better than expected! The resistance and capacitance readings were spot-on, and it passed the test on the first try. The service was reliable, and the packaging was thoughtful—I highly recommend it.

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Common Countries Logistic Time Reference
Region	Country	Logistic Time(Day)
America	United States	5
America	Brazil	7
Europe	Germany	5
	United Kingdom	4
	Italy	5
Oceania	Australia	6
Oceania	New Zealand	5
Asia	India	4
Asia	Japan	4
Middle East	Israel	6

DHL & FedEx Shipment Charges Reference
Shipment charges(KG)	Reference DHL(USD$)
0.00kg-1.00kg	USD$30.00 - USD$60.00
1.00kg-2.00kg	USD$40.00 - USD$80.00
2.00kg-3.00kg	USD$50.00 - USD$100.00

Note:: The above table is for reference only. There may have some data bias for the uncontrollable factors.
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