Manufacturer Part Number
BSH105,215
Manufacturer
Nexperia
Introduction
The BSH105,215 are N-channel enhancement-mode field-effect transistors (FETs) in a TO-236AB (SOT-23) surface-mount package.
Product Features and Performance
N-channel MOSFET with low on-resistance and fast switching
Optimized for use as switching devices in DC-to-DC converters, load switches, and similar applications
Excellent thermal resistance for efficient power dissipation
Extremely low gate charge for fast switching
Low output capacitance for high-frequency operation
Product Advantages
Compact surface-mount package
Low on-resistance for efficient power conversion
Fast switching for high-frequency applications
Excellent thermal performance for power dissipation
Key Technical Parameters
Drain-to-Source Voltage (Vds): 20V
Gate-to-Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 200mΩ @ 600mA, 4.5V
Continuous Drain Current (Id): 1.05A @ 25°C
Input Capacitance (Ciss): 152pF @ 16V
Power Dissipation (Pd): 417mW @ 25°C
Quality and Safety Features
RoHS3 compliant
Reliable and robust design for long-term operation
Compatibility
Compatible with common MOSFET driver circuits and control systems
Application Areas
DC-to-DC converters
Load switching
Power management circuits
General-purpose switching applications
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Compact surface-mount package for space-constrained designs
Low on-resistance for efficient power conversion
Fast switching for high-frequency applications
Excellent thermal performance for reliable operation under high power
RoHS3 compliance for use in a wide range of applications
BSH105+215Freescale / NXP Semiconductors
BSH105,125NEXP