Manufacturer Part Number
STGYA120M65DF2AG
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product: Transistors IGBTs Single
Product Features and Performance
RoHS3 Compliant
Trench Field Stop IGBT Technology
Max Power: 625 W
Collector-Emitter Breakdown Voltage: 650 V
Collector Current (Max): 160 A
Collector-Emitter Saturation Voltage (Max): 2.15 V @ 15 V, 120 A
Reverse Recovery Time: 202 ns
Gate Charge: 420 nC
Collector Current (Pulsed Max): 360 A
Turn-On/Off Delay Time: 66 ns / 185 ns
Product Advantages
Reliable performance under high power and temperature conditions
Efficient switching characteristics
Key Technical Parameters
Package: TO-247-3
Operating Temperature: -55°C to 175°C
Mounting Type: Through Hole
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Suitable for high power and high-efficiency applications such as motor drives, power supplies, and industrial inverters
Product Lifecycle
Current product, no discontinuation or replacement plans known
Key Reasons to Choose This Product
Robust Trench Field Stop IGBT technology for reliable high-power performance
Efficient switching characteristics for improved system efficiency
Wide operating temperature range suitable for demanding applications
RoHS3 compliance for environmentally-friendly use
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