VN7007BHTR-E Tech Specifications
STMicroelectronics - VN7007BHTR-E technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics - VN7007BHTR-E

Product Attribute	Attribute Value
Part Number	VN7007BHTR-E
Package	DAC91001
Description	DAC91001
Stock Condition	Get 8430 pcs available quantity at Allelco
Payment	PayPal / TT / Credit Card / Western Union
Allelco Certifications	ESD / ISO 9001 / ISO 13485 / ISO 28000

Product Attribute	Attribute Value
Manufacturer	STMicroelectronics
RoHs Status	-
Warranty	100% Perfect Functions
Transport port	Hong Kong
Shipping by	DHL / FedEx / UPS / TNT / SF Express
RFQ Email	info@allelco.com

Frequently Asked Questions(FAQ)

How does the VN7007BHTR-E handle high-side switching in automotive applications, and what protection features mitigate load dump risks?: The VN7007BHTR-E is designed for high-side power switching with integrated protection against voltage transients common in automotive environments. It supports a maximum drain-source voltage of 70V, which accommodates typical battery voltages including 24V systems. Internal overvoltage clamping helps suppress load dump events up to 70V, reducing stress on downstream circuitry. However, external snubber networks or TVS diodes may still be required for compliance with ISO 7637-2 transient immunity standards in harsh conditions.

What are the key differences between the VN7007BHTR-E and similar discrete solutions when driving inductive loads like solenoids or motors?: Unlike discrete implementations that require additional gate drivers, flyback diodes, and current-limiting resistors, the VN7007BHTR-E integrates a charge pump, active clamp, and thermal shutdown in a single package. This reduces component count by approximately 60% compared to external designs. The device’s low RDS(on) of 75mΩ at 10V gate drive enables higher efficiency under continuous loads, while internal diagnostics provide feedback for system monitoring absent in basic discrete alternatives.

Can the VN7007BHTR-E operate reliably in ambient temperatures exceeding 125°C, and how does junction temperature affect its performance?: The VN7007BHTR-E has a maximum junction temperature of 150°C, but sustained operation above 125°C significantly reduces its lifespan and increases failure risk due to accelerated electromigration. In practical terms, if the TO-252-7 package dissipates 25W in a 100°C environment with poor airflow, the junction could exceed 150°C within minutes. Engineers must derate output current accordingly—typically limiting continuous current to 3–4A in such cases—and ensure adequate copper area on the PCB for heat spreading.

What diagnostic capabilities does the VN7007BHTR-E offer for real-time system monitoring?: The device includes an open-load detection circuit that senses load disconnection or short circuits by monitoring voltage drop across the output. When enabled via the STLIM pin, it triggers a flag indicating abnormal conditions without requiring external sense resistors. This feature reduces component count and improves fault response time compared to purely software-based methods. The diagnostic signal can be routed directly to a microcontroller input for logging or safety interlocks.

How should gate drive requirements be managed when using the VN7007BHTR-E with microcontrollers lacking strong pull-up capabilities?: The VN7007BHTR-E uses a bootstrap capacitor to generate gate drive voltages above the source potential during turn-on. If the MCU cannot source sufficient peak current (typically >2mA), the gate voltage may rise slowly, increasing conduction losses and raising RDS(on). A dedicated gate driver IC or a low-value resistor (e.g., 10Ω) from the MCU GPIO to the BOOT pin can accelerate charging. Alternatively, a Schottky diode and small ceramic capacitor near the BOOT and VS pins improve transient response and reduce turn-on delay.

Is it feasible to parallel multiple VN7007BHTR-E devices for higher current handling?: Paralleling is generally not recommended unless strictly necessary due to mismatched threshold voltages and RDS(on) tolerances (±15% typical). Without precise current sharing components, one device may carry excess current during transients, leading to localized heating and failure. If paralleling is unavoidable, use individual gate resistors (~10Ω each) and implement current sensing per channel. Even then, thermal coupling through the shared heatsink introduces instability, making this approach complex and less reliable than selecting a higher-current monolithic alternative.

What layout considerations are critical when mounting the VN7007BHTR-E to minimize parasitic inductance and thermal resistance?: The TO-252-7 package includes exposed pads on both the top and bottom for enhanced thermal conductivity. Mounting the device directly onto a thick copper plane—ideally ≥2 oz copper with vias connecting to internal ground layers—reduces thermal resistance by up to 40%. Keep high-current paths as short and wide as possible (<5mm loop length) to minimize parasitic inductance, which is crucial for suppressing voltage spikes during fast switching of inductive loads. Place decoupling capacitors within 2mm of the VS and GND pins.

How does the internal thermal shutdown mechanism respond during prolonged overload conditions?: The VN7007BHTR-E monitors junction temperature and disables output if it exceeds approximately 175°C. Upon cooling below ~150°C, the device automatically restores operation. However, frequent cycling between these thresholds due to inadequate heatsinking can degrade semiconductor reliability over time. In automotive applications where vibrations and thermal cycling are common, this behavior necessitates careful enclosure design and airflow planning to avoid nuisance shutdowns.

Can the VN7007BHTR-E be used in reverse polarity protection configurations?: Yes, when configured as a high-side switch with the load grounded, the device prevents current flow if the supply is accidentally reversed, provided the negative voltage does not exceed -0.3V at the source pin. However, this only protects against accidental inversion; full reverse polarity protection requires an external P-channel MOSFET or diode bridge for robust handling of large back-EMF or sustained reverse currents. The internal body diode conducts minimally during reverse bias, but prolonged exposure should be avoided.

What are the implications of enabling STLIM versus leaving it floating when operating near current limits?: Leaving STLIM unconnected disables overcurrent protection, allowing unrestricted conduction until thermal limits are reached. Enabling STLIM activates active current regulation, limiting peak current to around 10A (typ.) before clamping. While useful for protecting sensitive loads, constant current limiting can increase power dissipation and junction temperature. For applications requiring precise current control (e.g., LED dimming), this feature adds value; for motor drives, it may cause stall conditions and should be evaluated against torque requirements.

How does the charge pump affect gate drive voltage stability under varying supply conditions?: The internal charge pump generates a gate drive voltage 5–7V above the source terminal during turn-on, ensuring full enhancement even with a 12V supply. However, under cold crank conditions (e.g., -30°C), reduced capacitance and leakage currents can cause slower charge pump response, resulting in elevated RDS(on) and increased conduction losses. Designers should verify turn-on speed under minimum operating temperature using actual supply waveforms rather than relying solely on datasheet graphs at room temperature.

What ESD sensitivity level applies to the VN7007BHTR-E, and what precautions are needed during assembly?: The device typically meets HBM Level 2 (2kV) ESD sensitivity, consistent with standard automotive-grade components. Handling during assembly requires grounding straps, conductive flooring, and proper storage in anti-static packaging. Although the internal protection structures absorb minor discharges, repeated exposure near failure thresholds can compromise long-term reliability. Automated pick-and-place machines with controlled humidity (<60%) further reduce risk.

How does the VN7007BHTR-E compare to the VN7008BHTR-E in terms of current capacity and thermal performance?: Both share the same TO-252-7 package and pinout, but the VN7008BHTR-E offers slightly lower RDS(on) (60mΩ vs. 75mΩ) and higher continuous drain current rating (6A vs. 4A). Under identical thermal conditions, the VN7008 can deliver about 25% more power without exceeding junction temperature limits. However, the VN7007BHTR-E remains suitable for cost-sensitive designs where moderate current demands and space constraints justify its use. Selection depends on margin requirements and BOM optimization goals.

Are there any known limitations regarding switching frequency when driving capacitive loads?: The VN7007BHTR-E is optimized for infrequent switching applications such as relay or solenoid control, where duty cycles are low (<50%) and frequencies range from 1Hz to 1kHz. Driving high-capacitance loads (e.g., large filter capacitors) at frequencies above 5kHz increases switching losses due to limited gate drive slew rate and charge pump capability. Exceeding 10kHz may result in incomplete turn-on, elevated RDS(on), and excessive heat generation, especially at elevated ambient temperatures.

How does the internal flyback path behave during rapid commutation of inductive loads?: When the MOSFET turns off, energy stored in the inductor circulates through the parasitic body diode until the external freewheeling diode conducts. The VN7007BHTR-E does not include an internal flyback diode, so an external Schottky or fast-recovery diode must be placed across the load with cathode to drain. Without this external component, voltage ringing and overshoot occur, potentially damaging the device or adjacent circuitry. Proper snubber design further dampens oscillations.

What environmental certifications support the VN7007BHTR-E’s suitability for industrial or transportation systems?: While specific certification details depend on manufacturing batch, the device adheres to RoHS and REACH directives, reflecting lead-free construction and restricted substance compliance. Its automotive-grade architecture implies qualification to AEC-Q101 standards, though users must confirm this explicitly with the distributor or ST Microelectronics. These attributes make it appropriate for applications in temperature-controlled enclosures, vibration-damped platforms, and EMI-shielded assemblies common in commercial vehicles.

What impact does source inductance have on switching performance when using the VN7007BHTR-E?: Source inductance forms resonant circuits with parasitic capacitances, causing voltage overshoot and ringing during turn-off. In the VN7007BHTR-E, this manifests as increased stress on the drain-source breakdown voltage margin. Layout-induced inductance greater than 10nH can elevate peak drain-source voltage by 10–15V beyond theoretical predictions, approaching the 70V absolute maximum. Minimizing lead lengths and using Kelvin connections where possible mitigates these effects, particularly important in high-reliability or high-temperature environments.

How does the absence of built-in soft-start affect inrush current management?: The VN7007BHTR-E lacks integrated soft-start functionality, meaning turn-on is instantaneous when the enable signal rises. Connecting capacitive loads (e.g., bulk capacitors >100µF) can cause large inrush currents exceeding 20A for milliseconds, potentially tripping upstream fuses or damaging connectors. Implementing external soft-start via a ramp generator on the EN pin or adding series resistance with bypass relays allows gradual voltage buildup. This precaution is essential in battery-powered or precision analog systems where inrush transients induce measurement errors or reset events.

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Customer Reviews

Evaluation: 10 Articles

Emil***rperTech

Jun 23, 2026

Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.
Liam***terTech

Jun 15, 2026

Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.
Nath***rooks

Jun 11, 2026

Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.
Dani***alkerTech

Jun 1, 2026

Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.
Yuki***aka88

May 26, 2026

信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。
Stev***aker

May 20, 2026

Solid diode for power rectification. Works well in switching circuits.
Bran***Lewis

May 11, 2026

Compact FPGA with good performance. Suitable for basic signal processing tasks.
Oliv***arris

May 7, 2026

Reliable I/O expander. Works well in embedded control applications.
Jess***Jones

Apr 17, 2026

It offers good value for the price, and the specifications match the description. I’ve been using it for two days with no issues, and I’ll definitely buy it again if I need it in the future.
Mich***Smith

Apr 17, 2026

Shipping was on time, the component pins are neatly aligned, and I tested 10 of them with a multimeter—all readings were within the specified range. Highly recommended.

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VN7007BHTR-E

STMicroelectronics
32D-VN7007BHTR-E

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VN7007BHTR-E - STMicroelectronics

Specifications

Frequently Asked Questions(FAQ)

Customers Also Interested in

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Customer Reviews

Evaluation: 10 Articles

Works exactly as described. I used it as a USB-to-SPI bridge in a small MCU development project and communication was stable from the first setup.

Used this CPLD in a logic control project. Programming was straightforward and signal timing matched the design requirements.

Installed this power component in a converter board. Output remained stable under different load conditions and thermal performance was better than expected.

Product works, but setup took more effort than expected. Once configured the MCU ran reliably, although documentation support felt older compared with newer platforms. Fine for maintenance projects.

信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

Solid diode for power rectification. Works well in switching circuits.

Compact FPGA with good performance. Suitable for basic signal processing tasks.

Reliable I/O expander. Works well in embedded control applications.

It offers good value for the price, and the specifications match the description. I’ve been using it for two days with no issues, and I’ll definitely buy it again if I need it in the future.

Shipping was on time, the component pins are neatly aligned, and I tested 10 of them with a multimeter—all readings were within the specified range. Highly recommended.