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HomeProductsDiscrete Semiconductor ProductsDiodes - Rectifiers - ArraysSS10P4CHM3_A/H
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SS10P4CHM3_A/H - Vishay General Semiconductor - Diodes Division

Manufacturer Part Number
SS10P4CHM3_A/H
Manufacturer
Vishay General Semiconductor – Diodes Division
Allelco Part Number
98D-SS10P4CHM3_A/H
Warranty
1 Year Allelco Warranty - Find out more
Stock Status:
33,991 pcs available, New & Original
Parts Description
DIODE SCHOTTKY 10A 40V TO277A
Package
TO-277A (SMPC)
Data sheet
SS10P4CHM3_A/H.pdf
RoHs Status
ROHS3 Compliant
Our certification
In stock: 33991
  • Unit Price: $0.42
  • Subtotal: $0.00

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Specifications

SS10P4CHM3_A/H Tech Specifications
Vishay General Semiconductor - Diodes Division - SS10P4CHM3_A/H technical specifications, attributes, parameters and parts with similar specifications to Vishay General Semiconductor - Diodes Division - SS10P4CHM3_A/H

Product Attribute Attribute Value
Manufacturer Vishay General Semiconductor – Diodes Division
Voltage - Forward (Vf) (Max) @ If 530 mV @ 5 A
Voltage - DC Reverse (Vr) (Max) 40 V
Technology Schottky
Supplier Device Package TO-277A (SMPC)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series Automotive, AEC-Q101, eSMP®
Package / Case TO-277, 3-PowerDFN
Product Attribute Attribute Value
Package Tape & Reel (TR)
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Surface Mount
Diode Configuration 1 Pair Common Cathode
Current - Reverse Leakage @ Vr 550 µA @ 40 V
Current - Average Rectified (Io) (per Diode) 5A
Base Product Number SS10P4

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHs Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99

Frequently Asked Questions(FAQ)

How does the forward voltage drop of the SS10P4CHM3_A/H compare to typical silicon rectifiers under similar current conditions, and what impact does this have on power efficiency in high-current automotive applications?
The SS10P4CHM3_A/H exhibits a maximum forward voltage (Vf) of 530 mV at 5 A, which is significantly lower than that of standard silicon rectifiers—typically exceeding 700 mV at the same current. This reduced Vf translates to lower conduction losses, improving overall system efficiency by minimizing heat dissipation in automotive power management circuits where continuous operation at elevated currents is common.
What are the key differences between the SS10P4CHM3_A/H and the SS10P4C-M3/86A in terms of electrical performance and qualification status, particularly for use in safety-critical automotive systems?
While both devices share the same core architecture—Schottky diode array with 40 V reverse breakdown and 5 A per diode average current—the SS10P4CHM3_A/H carries full AEC-Q101 automotive grade qualification, whereas the SS10P4C-M3/86A lacks explicit automotive certification. This distinction makes the SS10P4CHM3_A/H more suitable for functional safety designs requiring traceable reliability under thermal cycling, vibration, and extended temperature ranges typical in EV powertrains or ADAS modules.
Can the SS10P4CHM3_A/H be used in bidirectional protection circuits such as OR-ing configurations across battery inputs in dual-source automotive power systems?
Yes, the SS10P4CHM3_A/H supports bidirectional current flow when configured as two diodes in anti-parallel orientation within its common cathode arrangement. However, designers must account for the 550 µA reverse leakage current at 40 V, which could marginally affect standby power draw in low-voltage battery management systems. Careful layout and thermal derating near junction temperatures above 125°C may be necessary to maintain leakage performance.
What is the significance of the TO-277, 3-PowerDFN package for the SS10P4CHM3_A/H in terms of thermal resistance and PCB integration compared to traditional DPAK packages?
The TO-277, 3-PowerDFN package offers superior thermal conductivity due to exposed pad soldering, resulting in lower θJA values than conventional DPAK variants. This enables efficient heat spreading in compact automotive module layouts, allowing the SS10P4CHM3_A/H to handle sustained 5 A loads without exceeding the -55°C to +150°C junction limits even under ambient temperatures up to 125°C. Its surface-mount design also simplifies automated assembly while supporting high-density PCBs.
How does the fast recovery time of the SS10P4CHM3_A/H influence EMI characteristics in switching regulators operating above 500 kHz?
With a fast recovery time ≤500 ns, the SS10P4CHM3_A/H reduces reverse recovery spikes compared to slower rectifiers, thereby lowering high-frequency noise emission. In buck converters or DC-DC stages switching at 500 kHz+, this characteristic helps suppress conducted electromagnetic interference (EMI), potentially easing compliance with CISPR 25 Class 5 requirements in infotainment and lighting control modules.
Is the SS10P4CHM3_A/H compatible with lead-free reflow soldering processes commonly used in mass production of automotive electronics?
Yes, the device is fully RoHS3 compliant and rated MSL 1, meaning it can withstand multiple reflow cycles without degradation. The eSMP® series construction ensures metallurgical stability during peak reflow temperatures up to 260°C, making the SS10P4CHM3_A/H ideal for standard SAC305 solder pastes in automated SMT lines serving Tier-1 automotive suppliers.
What design precautions should engineers take when paralleling multiple SS10P4CHM3_A/H units to increase total current handling in battery charging circuits?
When paralleling SS10P4CHM3_A/H devices, ensure matched forward voltage characteristics through binning or layout symmetry to avoid current hogging. Given the ±5% variation in Vf across production batches, adding small ballast resistors (e.g., 10–22 mΩ) in series with each unit can balance current sharing effectively, especially at currents exceeding 10 A combined. Thermal coupling via shared copper pour further enhances stability.
How does the reverse leakage current specification of the SS10P4CHM3_A/H impact system quiescent power consumption in always-on vehicle control units powered from a 12 V rail?
At 40 V reverse bias, the SS10P4CHM3_A/H exhibits only 550 µA leakage per diode—approximately one-third that of comparable PIV-rated Schottkys. In a typical 12 V system with reverse-protection clamping, this results in negligible contribution to standby drain (<7 mA total), preserving battery life in keyless entry systems or telematics modules during long idle periods.
Can the SS10P4CHM3_A/H be used in solar microinverter input stages where partial shading causes voltage transients beyond 40 V?
No, because the absolute maximum Vr rating is 40 V DC. Operating near or above this limit risks avalanche breakdown, even briefly. For photovoltaic applications with potential overshoots, engineers should select a higher-voltage part (e.g., 60 V or 100 V class) or implement additional transient suppression circuitry like TVS arrays before using the SS10P4CHM3_A/H.
What are the implications of the eSMP® series design philosophy behind the SS10P4CHM3_A/H for mechanical stress resistance in automotive under-hood environments?
The eSMP® platform employs advanced die attach and mold compound technologies that enhance resistance to mechanical shock and vibration—critical in engine bays. The SS10P4CHM3_A/H’s molded PowerDFN structure reduces delamination risk during thermal cycling between -40°C and +150°C, ensuring long-term reliability in HVAC compressors or starter motor drive circuits exposed to harsh mechanical loads.

Parts with Similar Specifications

The three parts on the right have similar specifications to Vishay General Semiconductor - Diodes Division SS10P4CHM3_A/H

Product Attribute SS10P4CHM3_A/I SS10P4CHM3/86A SS10P4CHM3/87A SS10P4C-M3/86A
Part Number SS10P4CHM3_A/I SS10P4CHM3/86A SS10P4CHM3/87A SS10P4C-M3/86A
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Diode Configuration - - - -
Voltage - Forward (Vf) (Max) @ If - - - -
Technology - - - -
Supplier Device Package - 196-NFBGA (12x12) 16-PDIP 64-VQFN (9x9)
Base Product Number - DAC34H84 MAX500 ADS62P42
Voltage - DC Reverse (Vr) (Max) - - - -
Current - Reverse Leakage @ Vr - - - -
Series - - - -
Package / Case - 196-LFBGA 16-DIP (0.300', 7.62mm) 64-VFQFN Exposed Pad
Operating Temperature - Junction - - - -
Current - Average Rectified (Io) (per Diode) - - - -
Package - Tape & Reel (TR) Tube Tape & Reel (TR)
Speed - - - -
Mounting Type - Surface Mount Through Hole Surface Mount

SS10P4CHM3_A/H Datasheet PDF

Download SS10P4CHM3_A/H pdf datasheets and Vishay General Semiconductor - Diodes Division documentation for SS10P4CHM3_A/H - Vishay General Semiconductor - Diodes Division.

Datasheets
SS10P3C & SS10P4C.pdf

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Customer Reviews

Evaluation: 10 Articles

  • Yuki***aka88
    May 26, 2026

    信号通信プロジェクトでこのRS-485トランシーバーを使用しました。設置は簡単で、長距離ケーブルでも通信は安定していました。消費電力も、以前使用していたものより低くなっています。

  • Stev***aker
    May 20, 2026

    Solid diode for power rectification. Works well in switching circuits.

  • Bran***Lewis
    May 11, 2026

    Compact FPGA with good performance. Suitable for basic signal processing tasks.

  • Oliv***arris
    May 7, 2026

    Reliable I/O expander. Works well in embedded control applications.

  • Jess***Jones
    Apr 17, 2026

    It offers good value for the price, and the specifications match the description. I’ve been using it for two days with no issues, and I’ll definitely buy it again if I need it in the future.

  • Mich***Smith
    Apr 17, 2026

    Shipping was on time, the component pins are neatly aligned, and I tested 10 of them with a multimeter—all readings were within the specified range. Highly recommended.

  • Aman***arris
    Apr 3, 2026

    It was great—the entire process, from placing the order to receiving the package, went very smoothly. The components were consistent, the price was fair, and I had a very pleasant shopping experience.

  • Mike***nch
    Apr 3, 2026

    Better than expected! The resistance and capacitance readings were spot-on, and it passed the test on the first try. The service was reliable, and the packaging was thoughtful—I highly recommend it.

  • Daic***K.
    Mar 23, 2026

    Very good. No issue after long time testing.

  • Kevi***.
    Mar 17, 2026

    Fast switching and stable output. Very satisfied with this IC

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Shipment

Delivery Time

In-stock items can be shipped within 24 hours. Some parts will be arranged for delivery within 1-2 days from the date all items arrive at our warehouse. And Allelco ships order once a day at about 17:00, except Sunday. Once the goods are shipped, the estimated delivery time depends on the shipping methods and Delivery destination. The table below shows are the logistic time for some common countries.

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Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.
  • QC (Quality Warranty)
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Allelco is committed to exceeding customer expectations through customer service excellence, order accuracy, and on-time delivery.
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Electrostatic Discharge Protection and Handling

All electrostatic-sensitive components are handled in accordance with electrostatic discharge control procedures. The products are hermetically sealed in anti-static safe packaging to prevent electrostatic damage. Appropriate labeling is also applied for identification and traceability. This ensures product integrity during storage, handling and transportation.


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  • ISO 9001: 2015
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SS10P4CHM3_A/H Image

SS10P4CHM3_A/H

Vishay General Semiconductor - Diodes Division
98D-SS10P4CHM3_A/H

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