Manufacturer Part Number
SIR802DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET in PowerPAK SO-8 package
Product Features and Performance
Low on-resistance for high efficiency
High power rating for compact designs
Fast switching for high-frequency applications
Product Advantages
Excellent thermal management
Compact package
High reliability
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Current Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 10 V
Power Dissipation (Max): 4.6W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial and consumer electronics
Product Lifecycle
Current product
Replacements and upgrades available
Key Reasons to Choose This Product
High efficiency and power density
Excellent thermal management
Fast switching for high-frequency operation
Compact and reliable design
Suitable for a wide range of power electronics applications
SiR800DP-T1-E3Electro-Films (EFI) / Vishay